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公开(公告)号：US10103051B2
公开(公告)日：2018-10-16
申请号：US15603480
申请日：2017-05-24
Applicant: RichWave Technology Corp.
Inventor： Chih-Sheng Chen , Jhao-Yi Lin
IPC: H01L21/76 , H01L21/762 , H01L29/06 , H01L21/765 , H01L27/082 , H01L27/092 , H01L29/735
Abstract: A semiconductor structure includes a first well, a semiconductor element, a second well and a first isolation layer. The semiconductor element is formed on or contacts the first well. The first well is formed on the second well. The first isolation layer is used to reduce a parasitic effect between the first well and the second well. The bottom of the first isolation layer is at least as deep as the bottom of the first well. The first isolation layer substantially forms a first ring structure around the first well. The doping type of the second well is different from the doping type of the first well.
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公开(公告)号：US20180076194A1
公开(公告)日：2018-03-15
申请号：US15638351
申请日：2017-06-29
Applicant: RichWave Technology Corp.
Inventor： Chih-Sheng Chen , Tsung-Han Lee , Chang-Yi Chen
IPC: H01L27/06
CPC classification number: H01L27/0629 , H01L29/7833
Abstract: A transistor includes a first doping well, a second doping well, a first doping area, a second doping area, a gate layer, and at least one compensation capacitor. The first doping well and the second doping well are formed in a structure layer. The first doping area and the second doping area are formed in the first doping well and have a first conductivity type, the second doping well has a second conductivity type, and the first doping area is used for transmitting the signal. The at least one compensation capacitor is used for adjusting a voltage drop of a parasitic junction capacitor between the first doping area and the first doping well, a voltage drop of a parasitic junction capacitor between the first doping well and the second doping well, or a voltage drop of a parasitic junction capacitor between the second doping well and the structure layer.
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公开(公告)号：US20180025935A1
公开(公告)日：2018-01-25
申请号：US15603480
申请日：2017-05-24
Applicant: RichWave Technology Corp.
Inventor： Chih-Sheng Chen , Jhao-Yi Lin
IPC: H01L21/762 , H01L29/06
CPC classification number: H01L21/76224 , H01L21/765 , H01L27/082 , H01L27/0928 , H01L29/0619 , H01L29/735
Abstract: A semiconductor structure includes a first well, a semiconductor element, a second well and a first isolation layer. The semiconductor element is formed on or contacts the first well. The first well is formed on the second well. The first isolation layer is used to reduce a parasitic effect between the first well and the second well. The bottom of the first isolation layer is at least as deep as the bottom of the first well. The first isolation layer substantially forms a first ring structure around the first well. The doping type of the second well is different from the doping type of the first well.
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公开(公告)号：US09577631B2
公开(公告)日：2017-02-21
申请号：US15012859
申请日：2016-02-02
Applicant: RichWave Technology Corp.
Inventor： Chih-Sheng Chen , Ching-Wen Hsu
IPC: H01P5/12 , H03K17/687 , H01P1/15 , H01P1/10
CPC classification number: H03K17/6871 , H01P1/10 , H01P1/15 , H03K17/693
Abstract: A single-pole multi-throw switch includes a set of selection switches. The set of selection switches includes a set of primary switches, a first set and a second set of secondary switches. The primary set of switches includes a plurality of primary transistors coupled in series for transmitting radio frequency signals. The first set of secondary switches is coupled to the primary set of switches and includes a plurality of first secondary transistors coupled in series for transmitting the radio frequency signals when the primary transistors and the first secondary transistors are turned on. The second set of secondary switches is coupled to the primary set of switches and includes a plurality of second secondary transistors coupled in series for transmitting the radio frequency signals when the primary transistors and the second secondary transistors are turned on.
Abstract translation: 单刀多掷开关包括一组选择开关。 选择开关组包括一组主开关，第一组和第二组二次开关。 主要的开关组包括串联耦合的多个主晶体管用于发射射频信号。 第一组次级开关耦合到初级开关组，并且包括串联耦合的多个第一次级晶体管，用于当主晶体管和第一二级晶体管导通时发射射频信号。 第二组次级开关耦合到初级开关组，并且包括串联耦合的多个第二次级晶体管，用于在主晶体管和第二次级晶体管导通时发射射频信号。
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公开(公告)号：US08847668B2
公开(公告)日：2014-09-30
申请号：US13784835
申请日：2013-03-05
Applicant: RichWave Technology Corp.
Inventor： Chih-Sheng Chen
IPC: H03K17/687
CPC classification number: H03K17/16 , H03K17/161
Abstract: An RF switch includes a transistor and a compensation capacitor circuit. The compensation capacitor circuit includes a first compensation capacitor and a second compensation capacitor of the same capacitance. The compensation capacitor circuit is used to improve voltage distribution between a control node and a first node of the transistor and between the control node and a second node of the transistor.
Abstract translation: RF开关包括晶体管和补偿电容器电路。 补偿电容电路包括具有相同电容的第一补偿电容器和第二补偿电容器。 补偿电容器电路用于改善控制节点和晶体管的第一节点之间以及控制节点和晶体管的第二节点之间的电压分布。
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Patent Agency Ranking
公开(公告)号：US12244269B2
公开(公告)日：2025-03-04
申请号：US17544914
申请日：2021-12-07
Applicant: RichWave Technology Corp.
Inventor： Sheng-Ting Chen , Chih-Sheng Chen
Abstract: A power amplifier has an amplifying transistor, a first resistor, a bias circuit, a second resistor, and a compensation circuit. The amplifying transistor amplifies a radio frequency (RF) signal to output an amplified RF signal. A control end of the amplifying transistor receives the RF signal. The first resistor provides a first resistance, and a second end of the first resistor is coupled to the control end of the amplifying transistor. The bias circuit has a bias transistor and is coupled to a first end of the first resistor. The second resistor provides a second resistance less than the first resistance, and a second end of the second resistor is coupled to the control end of the amplifying transistor. The compensation circuit has a compensation transistor, and an output end of the compensation circuit is coupled to a first end of the second resistor.
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公开(公告)号：US11870445B2
公开(公告)日：2024-01-09
申请号：US17411068
申请日：2021-08-25
Applicant: RichWave Technology Corp.
Inventor： Chih-Sheng Chen , Yu-Hsiang Chu
IPC: H03K5/1252 , G05F1/56
CPC classification number: H03K5/1252 , G05F1/56
Abstract: A radio frequency (RF) device and a voltage generation and harmonic suppressor thereof are provided. The RF device includes the voltage generation and harmonic suppressor and a RF circuit. The voltage generation and harmonic suppressor is configured to receive a RF signal to output at least one direct current (DC) voltage related to the RF signal, and configured to suppress a harmonic generated by the RF signal in the voltage generation and harmonic suppressor. The RF circuit is configured to receive the RF signal, and configured to perform an operation according to the at least one DC voltage.
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公开(公告)号：US20230246600A1
公开(公告)日：2023-08-03
申请号：US18084569
申请日：2022-12-20
Applicant: RichWave Technology Corp.
Inventor： Chih-Sheng Chen , Hung-Chia Lo , Chia-Jung Yeh
CPC classification number: H03F1/302 , H03F3/04 , H03F2200/129
Abstract: An amplifier circuit includes an amplifier, a detector and an adjustment circuit. The amplifier includes a first transistor and a bias voltage terminal. The first transistor includes a first terminal coupled to a first reference voltage terminal, a second terminal coupled to a second reference voltage terminal, and a control terminal coupled to the bias voltage terminal of the amplifier. The second transistor includes a first terminal coupled to a third reference voltage terminal and the detector, and a second terminal coupled to the second reference voltage terminal. The detector outputs a detection signal related to a characteristic parameter of the second transistor. The adjustment circuit is coupled to the detector and the bias voltage terminal of the amplifier for performing an adjustment operation according to the detection signal.
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公开(公告)号：US20230198565A1
公开(公告)日：2023-06-22
申请号：US17688916
申请日：2022-03-08
Applicant: RichWave Technology Corp.
Inventor： Yu-Siang Huang , Chih-Sheng Chen
CPC classification number: H04B1/1615 , H04B1/18 , H04B1/44
Abstract: A radio frequency (RF) switch includes a signal terminal, a reference voltage terminal and a shunt switch path. The shunt switch path includes a first sub-shunt circuit and a second sub-shunt circuit. The second sub-shunt circuit includes a first transistor and a second transistor coupled in parallel. When switched to a first state, the RF switch has first impedance; when switched to a second state, the RF switch has second impedance; and when switched to a third state, the RF switch has third impedance. The first impedance, the second impedance, and the third impedance are different.
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公开(公告)号：US20230179242A1
公开(公告)日：2023-06-08
申请号：US17570361
申请日：2022-01-06
Applicant: RichWave Technology Corp.
Inventor： Pei-Chuan Hsieh , Chih-Sheng Chen , Hang Chang
CPC classification number: H01Q5/335 , H04B1/1036 , H01Q5/392 , H04B2001/1072
Abstract: A radio frequency (RF) device and a multi-band matching circuit thereof are provided. The multi-band matching circuit includes an inductance circuit, a first capacitance circuit, an inductor, and a second capacitance circuit. A first terminal of the inductance circuit is coupled to a RF signal input terminal of the multi-band matching circuit. A first terminal of the first capacitance circuit is coupled to a second terminal of the inductance circuit. A first terminal of the inductor and a first terminal of the second capacitance circuit are coupled to a second terminal of the first capacitance circuit. A second terminal of the inductor is coupled to a first reference voltage. A second terminal of the second capacitance circuit is coupled to a second reference voltage. The second capacitance circuit is controlled by a single-bit control signal to change a capacitance value of the second capacitance circuit.
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