公开(公告)号：US20090296246A1

公开(公告)日：2009-12-03

申请号：US12474086

申请日：2009-05-28

申请人： Tomohiro Yamada ,  Ryo Kuroda

发明人： Tomohiro Yamada ,  Ryo Kuroda

IPC分类号： G02B5/20

CPC分类号： G02B5/204 ,  B82Y20/00 ,  G02B5/008

摘要： An optical filter includes a light-shielding conductive layer provided with a plurality of apertures on a substrate surface that selectively transmits light of a first wavelength, and a dielectric layer in contact with the conductive layer. A size of the apertures is a size equal to or less than the first wavelength, and a ratio of a surface area of the conductive layer to a surface area of the substrate surface is within a range of equal to or greater than 36% and equal to or less than 74%. A transmissivity of the first wavelength is increased by surface plasmons induced in the apertures by light falling on the conductive layer.

摘要翻译： 光学滤波器包括在衬底表面上设置有选择性透射第一波长的光的多个孔的光屏蔽导电层和与导电层接触的电介质层。 孔的尺寸为等于或小于第一波长的尺寸，并且导电层的表面积与基板表面的表面积的比率在等于或大于36％的范围内并且等于 至或小于74％。 第一波长的透射率通过落在导电层上的光在孔中引起的表面等离子体激元而增加。

公开(公告)号：US20090207398A1

公开(公告)日：2009-08-20

申请号：US12434992

申请日：2009-05-04

申请人： Ryo Kuroda ,  Natsuhiko Mizutani ,  Tomohiro Yamada

发明人： Ryo Kuroda ,  Natsuhiko Mizutani ,  Tomohiro Yamada

IPC分类号： G03B27/72 ,  G03F1/00 ,  G03B27/32

CPC分类号： G03F7/70325 ,  B82Y10/00 ,  G03F1/50 ,  G03F7/2014

摘要： An exposure mask in which exposure of an exposure object is carried out on the basis of near field light leaking from a plurality of openings provided in a light blocking member in a mutually adjoining relation, in which the spacing between adjacent openings is not greater than the wavelength of light used for the exposure, and an end portion of the opening at the exposure object side has a structure effective to reduce scatter of a surface plasmon polariton wave going around to the exposure object side of the light blocking member.

摘要翻译： 一种曝光掩模，其中曝光对象的曝光是基于相邻开口之间的间隔不大于相邻邻接关系中设置的光阻挡构件中的多个开口泄漏的近场光， 用于曝光的光的波长和曝光对象侧的开口的端部具有有效地减少到达遮光构件的曝光物体侧的表面等离子体激元波的散射的结构。

公开(公告)号：US07473518B2

公开(公告)日：2009-01-06

申请号：US11768445

申请日：2007-06-26

申请人： Ryo Kuroda ,  Natsuhiko Mizutani

发明人： Ryo Kuroda ,  Natsuhiko Mizutani

IPC分类号： G03F7/40 ,  G03F7/20

CPC分类号： G03F7/7035 ,  B82Y10/00 ,  G03F1/50 ,  G03F7/2014 ,  G03F7/70325 ,  G03F7/70566

摘要： A method of manufacturing a device includes the steps of (i) providing a near-field photomask including a light shield film for constituting a light shield portion and openings formed in the light shield film, wherein the openings include two or more parallel first slit openings lengthening in a first direction and a second slit opening lengthening in a second direction that is perpendicular to the first directions, wherein the second slit opening interlinks the first slit openings, (ii) forming a photoresist layer on a substrate, (iii) exposing the photoresist layer to near-field light through the near-field photomask using polarized exposure light having an electrical field component parallel to the first direction, to form a latent image on the photoresist only in discrete regions at which the second slit opening crosses the light shield portion, (iv) forming a pattern of the photoresist layer based on the latent image, and (v) etching a surface of the substrate based on the pattern.

摘要翻译： 一种制造器件的方法包括以下步骤：（i）提供包括用于构成遮光部分的遮光膜和形成在遮光膜中的开口的近场光掩模，其中开口包括两个或更多个平行的第一狭缝开口 在第一方向上延长，第二狭缝开口在与第一方向垂直的第二方向上延长，其中第二狭缝开口互连第一狭缝开口，（ii）在基底上形成光致抗蚀剂层，（iii） 光致抗蚀剂层通过使用具有与第一方向平行的电场分量的偏振曝光光通过近场光掩模进行近场光，仅在第二狭缝开口穿过光屏蔽的离散区域中在光致抗蚀剂上形成潜像 部分，（iv）基于潜像形成光致抗蚀剂层的图案，和（v）基于图案蚀刻基板的表面 。

公开(公告)号：US20070248917A1

公开(公告)日：2007-10-25

申请号：US11768445

申请日：2007-06-26

申请人： Ryo Kuroda ,  Natsuhiko Mizutani

发明人： Ryo Kuroda ,  Natsuhiko Mizutani

IPC分类号： G03C5/00

CPC分类号： G03F7/7035 ,  B82Y10/00 ,  G03F1/50 ,  G03F7/2014 ,  G03F7/70325 ,  G03F7/70566

摘要： A method of manufacturing a device includes the steps of (i) providing a near-field photomask including a light shield film for constituting a light shield portion and openings formed in the light shield film, wherein the openings include two or more parallel first slit openings lengthening in a first direction and a second slit opening lengthening in a second direction that is perpendicular to the first directions, wherein the second slit opening interlinks the first slit openings, (ii) forming a photoresist layer on a substrate, (iii) exposing the photoresist layer to near-field light through the near-field photomask using polarized exposure light having an electrical field component parallel to the first direction, to form a latent image on the photoresist only in discrete regions at which the second slit opening crosses the light shield portion, (iii) forming a pattern of the photoresist layer based on the latent image, and (iv) etching a surface of the substrate based on the pattern.

摘要翻译： 一种制造器件的方法包括以下步骤：（i）提供包括用于构成遮光部分的遮光膜和形成在遮光膜中的开口的近场光掩模，其中开口包括两个或更多个平行的第一狭缝开口 在第一方向上延长，第二狭缝开口在与第一方向垂直的第二方向上延长，其中第二狭缝开口互连第一狭缝开口，（ii）在基底上形成光致抗蚀剂层，（iii） 光致抗蚀剂层通过使用具有与第一方向平行的电场分量的偏振曝光光通过近场光掩模进行近场光，仅在第二狭缝开口穿过光屏蔽的离散区域中在光致抗蚀剂上形成潜像 部分，（iii）基于潜像形成光致抗蚀剂层的图案，以及（iv）基于所述图案蚀刻所述基板的表面 呃

公开(公告)号：US07279253B2

公开(公告)日：2007-10-09

申请号：US10936806

申请日：2004-09-09

申请人： Tomohiro Yamada ,  Ryo Kuroda ,  Natsuhiko Mizutani

发明人： Tomohiro Yamada ,  Ryo Kuroda ,  Natsuhiko Mizutani

IPC分类号： G03F1/00

CPC分类号： G03F1/54 ,  G03F1/50

摘要： A near-field exposure mask includes a mask base material and a light blocking layer formed on the base material, the light blocking layer includes a fine metal structure or fine opening formed in the light blocking layer. The size of the metal structure or the size of the opening is not more than a wavelength of light for exposure, and at least one of a cross section of the fine metal structure in a direction perpendicular to a surface of the mask, and a cross section of the fine opening in a direction perpendicular to the mask surface has an asymmetrical sectional shape with respect to an arbitrary axis perpendicular to the mask surface.

摘要翻译： 近场曝光掩模包括掩模基材和形成在基材上的遮光层，遮光层包括形成在遮光层中的细金属结构或细孔。 金属结构的尺寸或开口的尺寸不大于用于曝光的光的波长，并且细小金属结构的垂直于掩模的表面的方向的横截面中的至少一个和十字 在与掩模表面垂直的方向上的细孔的截面相对于垂直于掩模表面的任意轴具有不对称的截面形状。

公开(公告)号：US20070146680A1

公开(公告)日：2007-06-28

申请号：US10554993

申请日：2005-06-24

申请人： Yasuhisa Inao ,  Ryo Kuroda ,  Natsuhiko Mizutani

发明人： Yasuhisa Inao ,  Ryo Kuroda ,  Natsuhiko Mizutani

IPC分类号： G03B27/62

CPC分类号： G03F7/7035 ,  B82Y10/00 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2014 ,  G03F7/70325 ,  G03F7/70433 ,  G03F7/70691 ,  G03F9/703 ,  G03F9/7053 ,  G03F9/7088

摘要： Disclosed is an exposure apparatus, an exposure method and an exposure mask, for improved optical lithography. Specifically, in accordance with one preferred form of the invention, the exposure apparatus is arranged to be used with an exposure mask having an elastically deformable holding member and a light blocking film provided on the holding member and being formed with an opening pattern, wherein for exposure the exposure mask is flexed to be brought into contact with an object to be exposed. The exposure apparatus includes a distance detecting system for detecting a distance between the exposure mask before being flexed and the object to be exposed, and a distance controlling system for controlling the distance between the exposure mask before being flexed and the object to be exposed, on the basis of a signal from the distance detecting system.

摘要翻译： 公开了一种用于改进的光刻技术的曝光装置，曝光方法和曝光掩模。 具体地，根据本发明的一个优选形式，曝光装置被布置成与具有可弹性变形的保持构件和设置在保持构件上并形成有开口图案的遮光膜的曝光掩模一起使用，其中， 暴露曝光掩模被弯曲以与待曝光的物体接触。 曝光装置包括用于检测在弯曲之前的曝光掩模与待曝光的物体之间的距离的距离检测系统，以及用于控制在弯曲之前的曝光掩模与待曝光的物体之间的距离的距离控制系统， 来自距离检测系统的信号的基础。

公开(公告)号：US20070065734A1

公开(公告)日：2007-03-22

申请号：US11548756

申请日：2006-10-12

申请人： Yasuhisa Inao ,  Ryo Kuroda ,  Natsuhiko Mizutani

发明人： Yasuhisa Inao ,  Ryo Kuroda ,  Natsuhiko Mizutani

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F7/7035 ,  B82Y10/00 ,  G03F1/50 ,  G03F7/2014 ,  G03F7/70325 ,  G03F7/70566

摘要： An exposure method for exposing a workpiece on the basis of near-field light escaping from an opening of a mask. The method includes projecting non-polarized exposure light having a predetermined wavelength, emitted from a laser light source and passed through a depolarization device and a diffusion device, onto an exposure mask having a light blocking film formed with a plurality of rectangular openings therein, the openings having (i) a width in a widthwise direction not greater than one-third of the wavelength of the exposure light and (ii) two or more lengthwise directions extending along the mask surface, so that near-field light escaping from the openings performs exposure of a pattern on the basis of the openings.

摘要翻译： 一种用于基于从掩模的开口逸出的近场光暴露工件的曝光方法。 该方法包括将从激光源射出并通过去极化装置和扩散装置的具有预定波长的非偏振曝光光投射到具有形成有多个矩形开口的遮光膜的曝光掩模上， 具有（i）宽度方向的宽度不大于曝光光的波长的三分之一的开口和（ii）沿着掩模表面延伸的两个或更多个长度方向，使得从开口逸出的近场光执行 在开口的基础上曝光图案。

公开(公告)号：US07151250B2

公开(公告)日：2006-12-19

申请号：US11254638

申请日：2005-10-21

申请人： Yasuhiro Shimada ,  Ryo Kuroda

发明人： Yasuhiro Shimada ,  Ryo Kuroda

IPC分类号： G02B6/10

CPC分类号： G01Q60/22 ,  G02B6/10 ,  G02B6/122 ,  G02B6/241

摘要： A probe for detecting light or irradiating light comprises a cantilever supported at an end thereof by a substrate, a hollow tip formed at a free end of the cantilever, a microaperture formed at the end of the tip, and a hollow waveguide formed inside the cantilever.A method for producing a probe for light detection or light irradiation which comprises the steps of working a substrate to form a groove therein, forming a flat plate-shaped cover portion on the groove to form a hollow waveguide having an opening in a part thereof, forming a hollow tip having a microaperture on the opening, and removing a part of the substrate by etching, to form a cantilever.

公开(公告)号：US07136145B2

公开(公告)日：2006-11-14

申请号：US10630792

申请日：2003-07-31

申请人： Takako Yamaguchi ,  Ryo Kuroda

发明人： Takako Yamaguchi ,  Ryo Kuroda

IPC分类号： G03B27/42 ,  G03B27/02 ,  G03F1/00

CPC分类号： G03F7/7035 ,  B82Y10/00 ,  G03F7/16 ,  G03F7/2014 ,  G03F7/70325

摘要： An apparatus for forming a pattern by using a photomask including both a minute aperture where a main component of a transmitted light is an evanescent light and an aperture where a main component of a transmitted light is a propagating light. The apparatus includes a sample stand for placing a substrate to be processed on which a photoresist with a film thickness equal to or smaller than a width of the minute aperture is formed, a stage for placing the photomask, a light source for generating light for exposure, and a device for controlling a distance between the substrate to be processed and the photomask.

摘要翻译： 一种用于通过使用包括透射光的主要成分为ev逝光的微小孔和透射光的主要成分为传播光的孔的光掩模形成图案的装置。 该装置包括用于放置待处理基板的样品台，其上形成有薄膜厚度等于或小于微孔宽度的光致抗蚀剂，用于放置光掩模的台，用于产生曝光的光源 以及用于控制待处理基板与光掩模之间的距离的装置。

公开(公告)号：US07068353B2

公开(公告)日：2006-06-27

申请号：US10011974

申请日：2001-12-11

申请人： Koji Yano ,  Ryo Kuroda ,  Kohei Okamoto

发明人： Koji Yano ,  Ryo Kuroda ,  Kohei Okamoto

IPC分类号： G03B27/54

CPC分类号： G03F7/70058 ,  G03B27/42

摘要： An exposure apparatus includes a light-emitting portion arranged so as to be opposite to a photosensitive member at a position for exposure. A part of the light-emitting portion is smaller in width than a wavelength of light from the light-emitting portion.

摘要翻译： 曝光装置包括在曝光位置处与感光部件相对配置的发光部。 发光部的一部分的宽度比来自发光部的光的波长小。