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    SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
    51.
    发明申请
    SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20230043910A1

    公开(公告)日：2023-02-09

    申请号：US17793104

    申请日：2021-01-08

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yoshiyuki KUROKAWA ,  Munehiro KOZUMA ,  Takeshi AOKI ,  Takuro KANEMURA

    IPC: H04N5/376 ,  H01L27/30

    Abstract: A semiconductor device that has low power consumption and is capable of performing a product-sum operation is provided. The semiconductor device includes first and second cells, a first circuit, and first to third wirings. Each of the first and second cells includes a capacitor, and a first terminal of each of the capacitors is electrically connected to the third wiring. Each of the first and second cells has a function of feeding a current based on a potential held at a second terminal of the capacitor, to a corresponding one of the first and second wirings. The first circuit is electrically connected to the first and second wirings and stores currents I1 and I2 flowing through the first and second wirings. When the potential of the third wiring changes and accordingly the amount of current of the first wiring changes from I1 to I3 and the amount of current of the second wiring changes from I2 to I4, the first circuit generates a current with an amount I1-I2-I3+I4. Note that the potential of the third wiring is changed by firstly inputting a reference potential to the third wiring and then inputting a potential based on internal data or a potential based on information obtained by a sensor.

    ELECTRONIC DEVICE
    52.
    发明申请
    ELECTRONIC DEVICE 有权

    公开(公告)号：US20220406826A1

    公开(公告)日：2022-12-22

    申请号：US17893247

    申请日：2022-08-23

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takeshi AOKI ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA

    IPC: H01L27/146 ,  G09G3/36 ,  H01L29/786

    Abstract: An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

    SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING SEMICONDUCTOR DEVICE
    53.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220294402A1

    公开(公告)日：2022-09-15

    申请号：US17635268

    申请日：2020-08-11

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Kei TAKAHASHI ,  Takeshi AOKI ,  Munehiro KOZUMA ,  Takayuki IKEDA

    IPC: H03F3/45 ,  H01L27/12 ,  H03K5/24

    Abstract: A novel comparison circuit, a novel amplifier circuit, a novel battery control circuit, a novel battery protection circuit, a power storage device, a semiconductor device, an electric device, and the like are provided. In a semiconductor device, one of a source and a drain of a first transistor is electrically connected to one of a source and a drain of a second transistor and one of a source and a drain of a third transistor; the other of the source and the drain of the third transistor is electrically connected to a first output terminal; and the other of the source and the drain of the second transistor is electrically connected to a second output terminal. The semiconductor device has a function of outputting a comparison result of a signal supplied to a gate of the second transistor and a signal supplied to a gate of the third transistor, from the first output terminal and the second output terminal; and a function of changing the potential output from the first output terminal in accordance with the potential applied to a back gate of the first transistor.

    SEMICONDUCTOR DEVICE
    54.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220276839A1

    公开(公告)日：2022-09-01

    申请号：US17762852

    申请日：2020-09-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takahiko ISHIZU ,  Takeshi AOKI ,  Kazuma FURUTANI ,  Takayuki IKEDA ,  Shunpei YAMAZAKI

    IPC: G06F7/544 ,  H01L27/108 ,  H01L27/12 ,  H01L29/786

    Abstract: A semiconductor device includes a CPU and an accelerator that includes a first memory circuit, a driver circuit, and a product-sum operation circuit. The first memory circuit includes a first data retention portion, a second data retention portion, and a data reading portion. The first data retention portion, the second data retention portion, and the data reading portion each include a first transistor. The first transistor contains a metal oxide in a channel formation region. First data stored in the first data retention portion and second data stored in the second data retention portion are each weight data input to the product-sum operation circuit. The product-sum operation circuit has a function of performing product-sum operation of the weight data and input data input through the driver circuit. The product-sum operation circuit and the driver circuit each include a second transistor. The second transistor contains silicon in a channel formation region. The first transistor and the second transistor are stacked.

    Logic Circuit and Semiconductor Device Formed Using Unipolar Transistor
    55.
    发明申请
    Logic Circuit and Semiconductor Device Formed Using Unipolar Transistor 有权

    公开(公告)号：US20220173737A1

    公开(公告)日：2022-06-02

    申请号：US17441804

    申请日：2020-03-12

    Applicant: Semiconductor Energy Laboratory Co., Ltd

    Inventor： Hiroki INOUE ,  Munehiro KOZUMA ,  Takeshi AOKI ,  Shuji FUKAI ,  Fumika AKASAWA ,  Sho NAGAO

    IPC: H03K19/08 ,  H03K17/56

    Abstract: A semiconductor device is provided; the semiconductor device includes unipolar transistors. A steady-state current does not flow in the semiconductor device. The semiconductor device uses a high-level potential and a low-level potential to express a high level and a low level, respectively. The semiconductor device includes unipolar transistors, a capacitor, first and second input terminals, and an output terminal. To the second input terminal, a signal is input whose logic is inverted from the logic of a signal input to the first input terminal. The semiconductor device has a circuit structure called bootstrap in which two unipolar transistors are connected in series between the high-level potential and the low-level potential and a capacitor is provided between an output terminal and a gate of one of the two transistors. A delay is caused between the gate of the transistor and the signal output from the output terminal, whereby the bootstrap can be certainly performed.

    ELECTRONIC DEVICE
    57.
    发明申请
    ELECTRONIC DEVICE 有权

    公开(公告)号：US20210225910A1

    公开(公告)日：2021-07-22

    申请号：US17223248

    申请日：2021-04-06

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takeshi AOKI ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA

    IPC: H01L27/146 ,  G09G3/36 ,  H01L29/786

    Abstract: An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

    ELECTRONIC DEVICE
    58.
    发明申请
    ELECTRONIC DEVICE 有权

    公开(公告)号：US20210225909A1

    公开(公告)日：2021-07-22

    申请号：US17223208

    申请日：2021-04-06

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takeshi AOKI ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA

    IPC: H01L27/146 ,  G09G3/36 ,  H01L29/786

    Abstract: An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

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