ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND A MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210057504A1

    公开(公告)日:2021-02-25

    申请号:US16894953

    申请日:2020-06-08

    Abstract: An organic light emitting diode display including: a substrate; a TFT on the substrate; a planarization layer on the TFT; a pixel electrode on the planarization layer, wherein the pixel electrode includes upper and lower layers including a transparent conductive oxide and an intermediate layer including silver; an etch stop layer on the pixel electrode, wherein an upper surface of the pixel electrode is exposed by the etch stop layer; a partition on the etch stop layer, wherein the upper surface of the pixel electrode is exposed by the partition; an organic emission layer on the upper surface of the pixel electrode where the upper surface of the pixel electrode is exposed by the etch stop layer and the partition; and a common electrode on the organic emission layer and the partition, wherein the etch stop layer covers an edge and a side surface of the pixel electrode.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20200264706A1

    公开(公告)日:2020-08-20

    申请号:US16863394

    申请日:2020-04-30

    Abstract: An input sensing unit includes a first metal pattern layer including a plurality of first conductive lines extending in a first direction. A first insulating layer is disposed on the first metal pattern layer. A second metal pattern layer is positioned above the first insulating layer and includes a plurality of second conductive lines extending in a second direction intersecting the first direction. A second insulating layer is disposed on the second metal pattern layer. A sensing electrode is disposed on the second insulating layer and is electrically connected to the second metal pattern layer through a contact hole defined in the second insulating layer. An anti-reflection pattern layer is disposed on the first and second metal pattern layers to overlap the first and second metal pattern layers along a direction orthogonal to an upper surface of the anti-reflection pattern layer.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20190004616A1

    公开(公告)日:2019-01-03

    申请号:US15813331

    申请日:2017-11-15

    Abstract: An input sensing unit includes a first metal pattern layer including a plurality of first conductive lines extending in a first direction. A first insulating layer is disposed on the first metal pattern layer. A second metal pattern layer is positioned above the first insulating layer and includes a plurality of second conductive lines extending in a second direction intersecting the first direction. A second insulating layer is disposed on the second metal pattern layer. A sensing electrode is disposed on the second insulating layer and is electrically connected to the second metal pattern layer through a contact hole defined in the second insulating layer. An anti-reflection pattern layer is disposed on the first and second metal pattern layers to overlap the first and second metal pattern layers along a direction orthogonal to an upper surface of the anti-reflection pattern layer.

    THIN FILM TRANSISTOR ARRAY PANEL
    56.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL 有权
    薄膜晶体管阵列

    公开(公告)号:US20130320344A1

    公开(公告)日:2013-12-05

    申请号:US13691307

    申请日:2012-11-30

    CPC classification number: H01L29/78693 H01L29/458 H01L29/4908 H01L29/7869

    Abstract: A thin film transistor array panel includes: a semiconductor layer disposed on an insulation substrate; a gate electrode overlapping the semiconductor layer; a source electrode and a drain electrode overlapping the semiconductor layer; a first barrier layer disposed between the source electrode and the semiconductor layer; and a second barrier layer disposed between the drain electrode and the semiconductor layer, wherein the first barrier layer and the second barrier layer include nickel-chromium (NiCr).

    Abstract translation: 薄膜晶体管阵列面板包括:设置在绝缘基板上的半导体层; 与半导体层重叠的栅电极; 与该半导体层重叠的源电极和漏电极; 设置在所述源电极和所述半导体层之间的第一阻挡层; 以及设置在所述漏电极和所述半导体层之间的第二阻挡层,其中所述第一阻挡层和所述第二阻挡层包括镍 - 铬(NiCr)。

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