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    LIGHT EMITTING DEVICE, PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SAME
    52.
    发明申请
    LIGHT EMITTING DEVICE, PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20220140272A1

    公开(公告)日：2022-05-05

    申请号：US17515652

    申请日：2021-11-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyo Sook JANG ,  Eun Joo JANG ,  Ilyoung LEE ,  Tae Ho KIM ,  Kun Su PARK ,  Jun-Mo YOO

    IPC: H01L51/50 ,  C09K11/88 ,  H01L51/00

    Abstract: A light emitting device and a production method thereof. The light emitting device includes a light emitting layer including a plurality of quantum dots, and an electron auxiliary layer disposed on the light emitting layer, the electron auxiliary layer configured to transport electrons, inject electrons into the light emitting layer, or a combination thereof, wherein the electron auxiliary layer includes a plurality of metal oxide nanoparticles and a nitrogen-containing metal complex. The metal oxide nanoparticles include zinc and optionally a dopant metal, the dopant metal includes Mg, Co, Ga, Ca, Zr, W, Li, Ti, Y, Al, Co, or a combination thereof and a mole ratio of nitrogen to zinc in the electron auxiliary layer is greater than or equal to about 0.001:1.

    QUANTUM DOTS AND DEVICES INCLUDING THE SAME
    53.
    发明申请
    QUANTUM DOTS AND DEVICES INCLUDING THE SAME 有权

    公开(公告)号：US20220002621A1

    公开(公告)日：2022-01-06

    申请号：US17366429

    申请日：2021-07-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Woo KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Hwea Yoon KIM ,  Yuho WON

    IPC: C09K11/88 ,  C09K11/62 ,  C09K11/06 ,  C09K11/56 ,  C01B19/00 ,  C01G9/08

    Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

    QUANTUM DOT DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
    54.
    发明申请
    QUANTUM DOT DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20210257551A1

    公开(公告)日：2021-08-19

    申请号：US17171008

    申请日：2021-02-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Won Sik YOON ,  Moon Gyu HAN ,  Kwanghee KIM ,  Heejae LEE ,  Eun Joo JANG ,  Tae Hyung KIM ,  Hyo Sook JANG

    IPC: H01L51/00

    Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the quantum dot layer and the second electrode and including first inorganic nanoparticles and a first organic material, and an electron injection layer disposed between the electron transport layer and the second electrode and including second inorganic nanoparticles and a second organic material, wherein a ratio by weight of an amount of the second organic material to a total amount of the second inorganic nanoparticles and the second organic material in the electron injection layer is less than a ratio by weight of an amount of the first organic material to a total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer. An electronic device including the quantum dot device.

    CADMIUM FREE QUANTUM DOTS, AND COMPOSITE AND DISPLAY DEVICE INCLUDING THE SAME
    55.
    发明申请
    CADMIUM FREE QUANTUM DOTS, AND COMPOSITE AND DISPLAY DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20210246370A1

    公开(公告)日：2021-08-12

    申请号：US17166059

    申请日：2021-02-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seonmyeong CHOI ,  Eun Joo JANG ,  Hyo Sook JANG ,  Kun Su PARK

    IPC: C09K11/88 ,  C09K11/70 ,  C09K11/08 ,  H01L33/06 ,  H01L33/00 ,  H01L33/26

    Abstract: Quantum dots and electroluminescent device including the same. The quantum dots include an alloy core including a first semiconductor nanocrystal including indium (In), gallium (Ga), and phosphorous (P), and a semiconductor nanocrystal shell disposed on the alloy core, wherein the quantum dots do not include cadmium, wherein the quantum dots are configured to emit blue light having a maximum emission peak wavelength that is greater than or equal to about 440 nanometers (nm) and less than or equal to about 490 nm, wherein in the quantum dots, a mole ratio of gallium with respect to a sum of indium and gallium is greater than or equal to about 0.2:1 and less than or equal to about 0.75:1, and wherein the semiconductor nanocrystal shell includes a zinc chalcogenide.

    BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME
    56.
    发明申请
    BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME 审中-公开

    公开(公告)号：US20200371396A1

    公开(公告)日：2020-11-26

    申请号：US16989794

    申请日：2020-08-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun A. KANG ,  Eun Joo JANG ,  Hyo Sook JANG ,  Shin Ae JUN

    IPC: G02F1/1335 ,  C08K9/08 ,  C09D123/08 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  G02F1/13357 ,  C09K11/88

    Abstract: A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer.

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