公开(公告)号：US12136687B2

公开(公告)日：2024-11-05

申请号：US17586956

申请日：2022-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam Park ,  Shang Hyeun Park ,  Min Jong Bae ,  Mi Hye Lim ,  Deukseok Chung ,  Shin Ae Jun

IPC: H01L33/50 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88

Abstract: A quantum dot composite includes a matrix and a plurality of quantum dots dispersed in the matrix, and a color conversion panel and a display panel including the same. The plurality of quantum dots include a metal including indium (In) and zinc and a non-metal including phosphorous (P), selenium, and sulfur, wherein the plurality of quantum dots includes a mole ratio of sulfur to indium of greater than or equal to about 3:1 and less than or equal to about 6:1, and a mole ratio of sulfur to selenium of greater than or equal about 0.69:1 and less than or equal to about 0.89, and a mole ratio of zinc to indium of greater than or equal to about 10:1 and less than or equal to about 12.4:1, and wherein the plurality of the quantum dots are configured to emit red light.

公开(公告)号：US11981848B2

公开(公告)日：2024-05-14

申请号：US17238538

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Jun Park ,  Junghwa Kim ,  Tae Gon Kim ,  Taekhoon Kim ,  Young Mo Sung ,  Nayoun Won ,  Dongjin Yun ,  Mi Hye Lim ,  Shin Ae Jun ,  Hyeonsu Heo

IPC: C09K11/56 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/115

CPC classification number: C09K11/565 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/115

Abstract: A quantum dot including a semiconductor nanocrystal core including Group III-V compound, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, and a composite/electronic device. The quantum dot does not include cadmium and the first semiconductor nanocrystal shell includes a polyvalent metal dopant at an interface with the second semiconductor nanocrystal shell.

公开(公告)号：US11845888B2

公开(公告)日：2023-12-19

申请号：US17989035

申请日：2022-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Nayoun Won ,  Sungwoo Hwang ,  Eun Joo Jang ,  Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Garam Park ,  Shang Hyeun Park ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yong Seok Han

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H05B33/14 ,  H10K50/115 ,  H10K59/38 ,  B82Y40/00 ,  B82Y20/00 ,  G02F1/1335

CPC classification number: C09K11/0883 ,  C08L57/10 ,  C09K11/025 ,  C09K11/565 ,  C09K11/70 ,  C09K11/883 ,  G02F1/133617 ,  H05B33/14 ,  H10K50/115 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00 ,  C08L2203/20 ,  G02F1/133614 ,  G02F2202/022 ,  G02F2202/102 ,  G02F2202/36

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

公开(公告)号：US11796911B2

公开(公告)日：2023-10-24

申请号：US17204110

申请日：2021-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung SDI Co., Ltd.

Inventor： Shin Ae Jun ,  Shang Hyeun Park ,  Hojeong Paek ,  Jonggi Kim ,  Hyeyeon Yang ,  Eun Joo Jang ,  Yong Seok Han

IPC: G03F7/00 ,  G03F7/033 ,  G02B5/20 ,  G02B5/22 ,  C09K11/02 ,  C09K11/08

CPC classification number: G03F7/0007 ,  C09K11/02 ,  C09K11/08 ,  G02B5/207 ,  G02B5/223 ,  G03F7/033

Abstract: A photosensitive composition including a quantum dot dispersion, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, and wherein the acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic group and not having a carboxylic acid group and a phosphonic acid group.

公开(公告)号：US11795392B2

公开(公告)日：2023-10-24

申请号：US17234845

申请日：2021-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeyeon Yang ,  Jooyeon Ahn ,  Taekhoon Kim ,  Shang Hyeun Park ,  Nayoun Won ,  Mi Hye Lim ,  Shin Ae Jun

IPC: C09K11/88 ,  C09K11/08 ,  C09K11/02 ,  F21V8/00 ,  H10K50/115 ,  H10K59/38 ,  B82Y40/00 ,  B82Y20/00

CPC classification number: C09K11/883 ,  C09K11/025 ,  C09K11/0883 ,  G02B6/005 ,  H10K50/115 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00

Abstract: A cadmium-free quantum dot, a quantum dot-polymer composite including the cadmium-free quantum dot, a display device including the quantum dot-polymer composite, and an electroluminescent device including the cadmium-free quantum dot are disclosed, wherein the cadmium-free quantum dot includes a core including a first semiconductor nanocrystal including indium and phosphorus; a light emitting layer surrounding the core and including a second semiconductor nanocrystal including indium and phosphorus; a first shell disposed between the core and the light emitting layer and including a semiconductor nanocrystal including zinc, and selenium, sulfur, or a combination thereof; and a second shell disposed on the light emitting layer and including a semiconductor nanocrystal including zinc, and selenium, sulfur, or a combination thereof, and wherein the quantum is a single light emitting quantum dot having an emission peak wavelength in a range of about 500 nanometers (nm) to about 550 nm.

公开(公告)号：US11708529B2

公开(公告)日：2023-07-25

申请号：US17745995

申请日：2022-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shang Hyeun Park ,  Jong-Hoon Ka ,  Shin Ae Jun

IPC: C09K11/02 ,  C09K11/70 ,  C09K11/08 ,  G02F1/13357 ,  H10K50/115 ,  H10K59/38 ,  G02F1/1335 ,  H10K102/00

CPC classification number: C09K11/02 ,  C09K11/0883 ,  C09K11/703 ,  G02F1/1336 ,  G02F1/133617 ,  H10K50/115 ,  H10K59/38 ,  G02F1/133514 ,  G02F1/133614 ,  H10K2102/321 ,  H10K2102/331

Abstract: A composition including a quantum dot, a dispersing agent for dispersing the quantum dot, a polymerizable monomer including a carbon-carbon double bond, an initiator, a hollow metal oxide particulate, and a solvent, and a quantum dot-polymer composite manufactured from the composition.

公开(公告)号：US11661547B2

公开(公告)日：2023-05-30

申请号：US16883989

申请日：2020-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung SDI Co., Ltd. ,  Samsung Display Co., Ltd.

Inventor： Shin Ae Jun ,  Taekhoon Kim ,  Garam Park ,  Yong Seok Han ,  Eun Joo Jang ,  Hyo Sook Jang ,  Tae Won Jeong ,  Shang Hyeun Park

IPC: C09K11/62 ,  C09K11/70 ,  C09K11/08 ,  C09K11/88 ,  C09K11/56 ,  C09K11/02 ,  C08K3/32 ,  C08K3/30 ,  G02F1/1335 ,  G02F1/13357 ,  B82Y40/00 ,  B82Y20/00 ,  B82Y30/00

CPC classification number: C09K11/025 ,  C08K3/30 ,  C08K3/32 ,  C09K11/703 ,  C09K11/883 ,  G02F1/133516 ,  G02F1/133617 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08K2201/001 ,  G02F2202/36 ,  Y10S977/774 ,  Y10S977/896 ,  Y10S977/95

Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.

公开(公告)号：US11512252B2

公开(公告)日：2022-11-29

申请号：US15251643

申请日：2016-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam Park ,  Eun Joo Jang ,  Yongwook Kim ,  Jihyun Min ,  Hyo Sook Jang ,  Shin Ae Jun ,  Taekhoon Kim ,  Yuho Won

IPC: C09K11/88 ,  C09K11/02 ,  C09K11/70 ,  H01L33/50 ,  B82Y20/00

Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

公开(公告)号：US11352558B2

公开(公告)日：2022-06-07

申请号：US16904664

申请日：2020-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon Kim ,  Shin Ae Jun ,  Taek hoon Kim ,  Hyeyeon Yang ,  Nayoun Won ,  Jongmin Lee ,  Mi Hye Lim

IPC: C09K11/70 ,  C08F220/38 ,  C09K11/02 ,  C09K11/88 ,  H01L33/00 ,  H01L33/50 ,  B82Y20/00

Abstract: A quantum dot, and a composite and a display device including the quantum dot. The quantum dot comprises a semiconductor nanocrystal core comprising indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dot does not comprise cadmium wherein the quantum dot has a maximum photoluminescence peak in a green light wavelength region, and wherein in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4: (Absfirst−Absvalley)/Absfirst=VD wherein, Absfirst is an absorption value at the first absorption peak wavelength and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak.

公开(公告)号：US11193062B2

公开(公告)日：2021-12-07

申请号：US16825293

申请日：2020-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam Park ,  Tae Gon Kim ,  Nayoun Won ,  Shin Ae Jun ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Shang Hyeun Park ,  Jooyeon Ahn ,  Yuho Won ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/62 ,  C09K11/70 ,  C09K11/56 ,  C09K11/02 ,  H01L27/32 ,  F21V8/00 ,  G02F1/1335 ,  G02F1/13357 ,  H05B33/14 ,  A61B6/06 ,  A61B6/00 ,  G01T7/00 ,  G21K1/02 ,  B82Y20/00 ,  B82Y40/00 ,  A61B6/02

Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.