公开(公告)号：US09418794B2

公开(公告)日：2016-08-16

申请号：US13700613

申请日：2011-06-01

申请人： Chang Wook Kim ,  Dong Chan Park ,  Ju Young Song ,  Sang Hun Lee ,  Sung Bae Cho ,  Hyun Ho Yang ,  Jun Bo Yoon ,  Dong Hun Choi ,  Chang Hun Han

发明人： Chang Wook Kim ,  Dong Chan Park ,  Ju Young Song ,  Sang Hun Lee ,  Sung Bae Cho ,  Hyun Ho Yang ,  Jun Bo Yoon ,  Dong Hun Choi ,  Chang Hun Han

IPC分类号： H01G5/01 ,  H01G7/00 ,  H01G7/06 ,  H01G5/16

CPC分类号： H01G7/00 ,  H01G5/16

摘要： Disclosed is a MEMS variable capacitor, the capacitor including a first electrode, a second electrode that is floated on an upper surface of the first electrode, and a third electrode capable of variably-adjusting a capacitance value by adjusting a gap between the first electrode and the second electrode.

摘要翻译： 公开了一种MEMS可变电容器，电容器包括第一电极，漂浮在第一电极的上表面上的第二电极和能够通过调节第一电极和第二电极之间的间隙来可变地调整电容值的第三电极 第二电极。

公开(公告)号：US08659868B2

公开(公告)日：2014-02-25

申请号：US13520031

申请日：2011-05-27

申请人： Chang Wook Kim ,  Dong Chan Park ,  Ju Young Song ,  Sang Hun Lee ,  Sung Bae Cho ,  Hyun Ho Yang ,  Jun Bo Yoon ,  Dong Hun Choi ,  Chang Hun Han

发明人： Chang Wook Kim ,  Dong Chan Park ,  Ju Young Song ,  Sang Hun Lee ,  Sung Bae Cho ,  Hyun Ho Yang ,  Jun Bo Yoon ,  Dong Hun Choi ,  Chang Hun Han

IPC分类号： H01G5/16

CPC分类号： H01G5/04 ,  H01G5/18

摘要： Disclosed herein is a variable capacitor and its driving method, the variable capacitor including, a movable first electrode; and a second electrode formed with an insulating film, fixed in place, and its insulating film contacting the first electrode that is moved.

摘要翻译： 这里公开了可变电容器及其驱动方法，所述可变电容器包括可移动的第一电极; 以及形成有绝缘膜的第二电极，固定在适当位置，其绝缘膜与被移动的第一电极接触。

公开(公告)号：US20140039104A1

公开(公告)日：2014-02-06

申请号：US14009486

申请日：2012-07-27

申请人： Hyun Seok Yang ,  Dae Woo Lee ,  Han Jong You ,  Chang Hun Han ,  Seong Lyong Kim

发明人： Hyun Seok Yang ,  Dae Woo Lee ,  Han Jong You ,  Chang Hun Han ,  Seong Lyong Kim

IPC分类号： C08L33/12 ,  C08F220/10

CPC分类号： C08L33/12 ,  C08F220/10 ,  C08F279/02 ,  C08F279/04 ,  C08L33/16 ,  C08L51/04 ,  C08L55/02 ,  C08F220/14

摘要： Disclosed are an alkyl(meth)acrylate-based thermoplastic resin composition and a thermoplastic resin with modified scratch resistance and yellowness. The alkyl(meth)acrylate-based thermoplastic resin composition provides improved scratch resistance and low yellowness index while maintaining transparency, flowability, and impact strength, even when the total content of the vinyl cyan-based monomer contained in the resin composition is reduced to a level unattainable by conventional techniques, and the content of the alkyl(meth)acrylate-based monomer is increased.

摘要翻译： 公开了（甲基）丙烯酸烷基酯类热塑性树脂组合物和具有改善的耐划伤性和黄色性的热塑性树脂。 （甲基）丙烯酸烷基酯类热塑性树脂组合物，即使将树脂组合物中所含的乙烯基类青色系单体的总含量降低至一种（甲基）丙烯酸烷基酯类热塑性树脂组合物的总含量，也能够保持透明性，流动性，冲击强度， 通过常规技术难以达到的水平，并且（甲基）丙烯酸烷基酯类单体的含量增加。

公开(公告)号：US08228409B2

公开(公告)日：2012-07-24

申请号：US12574785

申请日：2009-10-07

申请人： Chang Hun Han

发明人： Chang Hun Han

IPC分类号： H04N5/335 ,  H01L21/00 ,  H01L31/062

CPC分类号： H01L27/14636 ,  H01L27/14632 ,  H01L27/14643

摘要： Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes readout circuitry and an inter-layer dielectric layer on a first substrate, a metal line in the inter-layer dielectric layer and electrically connected with the readout circuitry, a plurality of contact plugs on the metal line, and an image sensing device on the contact plugs. The image sensing device is electrically connected to the metal line through the plurality of contact plugs. The method for manufacturing an image sensor includes forming a readout circuitry on a first substrate, forming an inter-layer dielectric layer on the first substrate, forming a metal line in the inter-layer dielectric layer such that the metal line is electrically connected with the readout circuitry, forming a plurality of contact plugs on the metal line per unit pixel, and forming an image sensing device on the plurality of contact plugs.

摘要翻译： 公开了一种图像传感器及其制造方法。 图像传感器包括读出电路和第一衬底上的层间电介质层，层间电介质层中的金属线并与读出电路电连接，金属线上的多个接触插塞和图像感测 设备接触插头。 图像感测装置通过多个接触插塞电连接到金属线。 图像传感器的制造方法包括在第一基板上形成读出电路，在第一基板上形成层间电介质层，在层间电介质层中形成金属线，使金属线与 读出电路，在每单位像素的金属线上形成多个接触塞，以及在多个接触插塞上形成图像感测装置。

公开(公告)号：US08202757B2

公开(公告)日：2012-06-19

申请号：US12501341

申请日：2009-07-10

申请人： Chang Hun Han

发明人： Chang Hun Han

IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L21/311 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14634 ,  H01L27/14603

摘要： An image sensor includes readout circuitry on a first substrate, a metal line electrically connected with the readout circuitry, a dielectric on the metal line, an image sensing device on the dielectric, including first and second conductivity type layers, a contact plug in a via hole penetrating the image sensing device to connect the first conductivity type layer with the metal line, and a sidewall dielectric in the via hole at a sidewall of the second conductivity type layer.

摘要翻译： 图像传感器包括在第一基板上的读出电路，与读出电路电连接的金属线，金属线上的电介质，介质上的图像感测装置，包括第一和第二导电类型的层， 穿过图像感测装置的孔，以将第一导电类型层与金属线连接，以及在第二导电类型层的侧壁处的通孔中的侧壁电介质。

公开(公告)号：US07994554B2

公开(公告)日：2011-08-09

申请号：US12437373

申请日：2009-05-07

申请人： Chang Hun Han

发明人： Chang Hun Han

IPC分类号： H01L23/02

CPC分类号： H01L27/14683 ,  H01L27/14603

摘要： Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes the steps of: forming an isolation layer on a semiconductor substrate, defining an active region that includes a photo diode region and a transistor region; forming a gate in the transistor region, the gate including a gate electrode and a gate insulating layer; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming a buffer layer over the substrate, the buffer layer covering the photo diode region; forming first and second insulating layers over the entire surface of the substrate, the first and second insulating layer having a different etching selectivity from each other; forming an insulating sidewall on sides of the gate electrode by selective removal of the second insulating layer; removing the first insulating layer from the transistor region; forming a high-concentration diffusion region in the exposed transistor region, partially overlapping the second low-concentration diffusion region; and forming a metal silicide layer on the high-concentration diffusion region.

摘要翻译： 公开了CMOS图像传感器及其制造方法。 该方法包括以下步骤：在半导体衬底上形成隔离层，限定包括光电二极管区域和晶体管区域的有源区域; 在所述晶体管区域中形成栅极，所述栅极包括栅极电极和栅极绝缘层; 在所述光电二极管区域中形成第一低浓度扩散区域; 在所述晶体管区域中形成第二低浓度扩散区域; 在所述衬底上形成缓冲层，所述缓冲层覆盖所述光电二极管区域; 在衬底的整个表面上形成第一和第二绝缘层，第一和第二绝缘层彼此具有不同的蚀刻选择性; 通过选择性地去除所述第二绝缘层在所述栅电极的侧面上形成绝缘侧壁; 从晶体管区域去除第一绝缘层; 在所述暴露的晶体管区域中形成高浓度扩散区域，部分地与所述第二低浓度扩散区域重叠; 在高浓度扩散区上形成金属硅化物层。

公开(公告)号：US20100103298A1

公开(公告)日：2010-04-29

申请号：US12574785

申请日：2009-10-07

申请人： Chang Hun Han

发明人： Chang Hun Han

IPC分类号： H04N5/335 ,  H01L31/18

CPC分类号： H01L27/14636 ,  H01L27/14632 ,  H01L27/14643

摘要： Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes readout circuitry and an inter-layer dielectric layer on a first substrate, a metal line in the inter-layer dielectric layer and electrically connected with the readout circuitry, a plurality of contact plugs on the metal line, and an image sensing device on the contact plugs. The image sensing device is electrically connected to the metal line through the plurality of contact plugs. The method for manufacturing an image sensor includes forming a readout circuitry on a first substrate, forming an inter-layer dielectric layer on the first substrate, forming a metal line in the inter-layer dielectric layer such that the metal line is electrically connected with the readout circuitry, forming a plurality of contact plugs on the metal line per unit pixel, and forming an image sensing device on the plurality of contact plugs.

摘要翻译： 公开了一种图像传感器及其制造方法。 图像传感器包括读出电路和第一衬底上的层间电介质层，层间电介质层中的金属线并与读出电路电连接，金属线上的多个接触插塞和图像感测 设备接触插头。 图像感测装置通过多个接触插塞电连接到金属线。 图像传感器的制造方法包括在第一基板上形成读出电路，在第一基板上形成层间电介质层，在层间电介质层中形成金属线，使金属线与 读出电路，在每单位像素的金属线上形成多个接触塞，以及在多个接触插塞上形成图像感测装置。

公开(公告)号：US07632730B2

公开(公告)日：2009-12-15

申请号：US12105493

申请日：2008-04-18

申请人： Chang Hun Han

发明人： Chang Hun Han

IPC分类号： H01L21/8238

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687

摘要： A CMOS image sensor and a manufacturing method are disclosed. The gates of the transistors are formed in the active region of the unit pixel, and a diffusion region for the photo diode is defined by an ion implantation of impurities to the semiconductor substrate. The patterns of the photoresist that are the masking layer against ion implantation are formed on the semiconductor substrate in such a manner that they have the boundary portion of the isolation layer so as not to make the boundary of the defined photo diode contact with the boundary of the isolation layer. Damages by an ion implantation of impurities at the boundary portion between the diffusion region for the photo diode and the isolation layer are prevented, which reduces dark current of the COMS image sensor.

摘要翻译： 公开了CMOS图像传感器和制造方法。 晶体管的栅极形成在单位像素的有源区中，并且通过将杂质离子注入半导体衬底来限定用于光电二极管的扩散区。 作为抵抗离子注入的掩模层的光致抗蚀剂的图案以这样的方式形成在半导体衬底上，使得它们具有隔离层的边界部分，以便不使所定义的光电二极管的边界与 隔离层。 通过在光电二极管的扩散区域与隔离层之间的边界部分处的杂质的离子注入的损害被防止，这降低了COMS图像传感器的暗电流。

公开(公告)号：US20090189206A1

公开(公告)日：2009-07-30

申请号：US12379111

申请日：2009-02-12

申请人： Chang Hun Han

发明人： Chang Hun Han

IPC分类号： H01L31/112

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/1463

摘要： A CMOS image sensor and method for fabricating the same, wherein the CMOS image sensor has minimized dark current at the boundary area between a photodiode and an isolation layer. The present invention includes a first-conductivity-type doping area formed in the device isolation area of the substrate, the first-conductivity-type doping area surrounding the isolation area and a dielectric layer formed between the isolation layer and the first-conductivity-type doping area, wherein the first-conductivity-type doping area and the dielectric layer are located between the isolation layer and a second-conductivity-type diffusion area.

公开(公告)号：US20080265297A1

公开(公告)日：2008-10-30

申请号：US12216373

申请日：2008-07-02

申请人： Chang Hun Han

发明人： Chang Hun Han

IPC分类号： H01L31/112

CPC分类号： H01L27/14689 ,  H01L27/14643

摘要： A CMOS image sensor and a method for manufacturing the same are disclosed, in which a blue photodiode is imparted with a greater thickness to improve sensitivity of blue light. The blue photodiode of a CMOS image sensor includes a first lightly doped P-type epitaxial layer formed on a heavily doped P-type semiconductor substrate; a gate electrode of a transfer transistor formed on the first epitaxial layer; a first N-type blue photodiode region formed on the first epitaxial layer; and a second N-type blue photodiode region formed on the first epitaxial layer corresponding to the first blue photodiode region.