公开(公告)号：US20120319189A1

公开(公告)日：2012-12-20

申请号：US13163734

申请日：2011-06-20

申请人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee ,  Wen-Fang Lee

发明人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee ,  Wen-Fang Lee

IPC分类号： H01L29/739

CPC分类号： H01L27/0251 ,  H01L27/0266 ,  H01L29/0634 ,  H01L29/1087 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7817 ,  H01L29/7835 ,  H01L29/7838 ,  H01L29/861

摘要： The present invention provides a high-voltage semiconductor device including a deep well, a first doped region disposed in the deep well, a high-voltage well, a second doped region disposed in the high-voltage well, a first gate structure disposed on the high-voltage well between the second doped region and the first doped region, a doped channel region disposed in the high-voltage region and in contact with the second doped region and the deep well, and a third doped region disposed in the high-voltage well. The high-voltage well has a first conductive type, and the deep well, the first doped region, the second doped region, the doped channel region, and the third doped region have a second conductive type different from the first conductive type.

摘要翻译： 本发明提供了一种高压半导体器件，包括深阱，设置在深阱中的第一掺杂区，高电压阱，设置在高压阱中的第二掺杂区，设置在高阱上的第一栅极结构 在所述第二掺杂区域和所述第一掺杂区域之间的高电压阱，设置在所述高压区域中并与所述第二掺杂区域和所述深阱接触的掺杂沟道区域，以及设置在所述高压区域中的第三掺杂区域 好。 高电压阱具有第一导电类型，并且深阱，第一掺杂区域，第二掺杂区域，掺杂沟道区域和第三掺杂区域具有不同于第一导电类型的第二导电类型。

公开(公告)号：US20070138017A1

公开(公告)日：2007-06-21

申请号：US11311179

申请日：2005-12-20

申请人： Chih-Chung Wang ,  Wen-Yu Lu

发明人： Chih-Chung Wang ,  Wen-Yu Lu

IPC分类号： C25D5/02

CPC分类号： C25D5/022 ,  G01R1/06738 ,  G01R3/00

摘要： A treating method for probes positioned on a test card includes several steps for plating a layer of film of various materials according to different necessities on the tips or the portions of the probes before or after the probes on the test card is used, so that the tips of the probes may be repaired and plated again and again to let the probes increase their electric conductivity or insulating property and preventing electromagnetic interference. The materials of the layer of film may be metal, metal alloy or nonmetals.

摘要翻译： 位于测试卡上的探针的处理方法包括在使用测试卡上的探针之前或之后根据探针的尖端或部分上根据不同需要镀覆各种材料的膜层的几个步骤， 可以一次又一次地修复探针的尖端并进行电镀，以使探针增加其导电性或绝缘性能并防止电磁干扰。 膜层的材料可以是金属，金属合金或非金属。