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    Semiconductor device comprising a photoelectric conversion portion
    51.
    发明授权
    Semiconductor device comprising a photoelectric conversion portion 有权
    半导体器件包括光电转换部分

    公开(公告)号：US09048788B2

    公开(公告)日：2015-06-02

    申请号：US13454407

    申请日：2012-04-24

    申请人： Atsushi Hirose

    发明人： Atsushi Hirose

    IPC分类号： H03F3/08

    CPC分类号： H03F3/08 ,  H01L31/09 ,  H03F3/082

    摘要： In a semiconductor device, power consumption is reduced. Further, a standby circuit is formed of a few elements, and thus increase in the circuit area of the semiconductor device is prevented. The standby circuit provided in the semiconductor device is formed of only one transistor and voltage supplied to the transistor is switched, whereby output current of the semiconductor device is controlled. As a result, the output current of the semiconductor device in a standby state can be substantially zero, so that the power consumption can be reduced. By using an oxide semiconductor for a semiconductor layer of a transistor, leakage current can be suppressed as low as possible.

    摘要翻译： 在半导体器件中，功耗降低。 此外，备用电路由几个元件形成，因此防止了半导体器件的电路面积的增加。 设置在半导体器件中的待机电路仅由一个晶体管形成，并且提供给晶体管的电压被切换，从而控制半导体器件的输出电流。 结果，处于待机状态的半导体器件的输出电流可以基本上为零，从而可以降低功耗。 通过使用氧化物半导体用于晶体管的半导体层，可以将泄漏电流抑制得尽可能低。

    Photodetector
    55.
    发明授权
    Photodetector 有权
    光电检测器

    公开(公告)号：US08106346B2

    公开(公告)日：2012-01-31

    申请号：US12550471

    申请日：2009-08-31

    申请人： Atsushi Hirose ,  Jun Koyama

    发明人： Atsushi Hirose ,  Jun Koyama

    IPC分类号： H01J40/14

    CPC分类号： H03K17/785

    摘要： A photodetector includes a photoelectric conversion circuit that generates a first voltage by converting a first current generated in accordance with the illuminance of incident light into log-compressed voltage; a temperature compensation circuit that generates a second voltage by performing temperature compensation for the first voltage and generate a second current by converting the second voltage into current; and a digital signal generation circuit that generates a clock signal having an oscillation frequency depending on the second current, counts pulses of the clock signal for a certain period, and generates a digital signal using the count value for the certain period as data.

    摘要翻译： 光电检测器包括光电转换电路，其通过将根据入射光的照度生成的第一电流转换为对数压缩电压来产生第一电压; 温度补偿电路，通过对所述第一电压进行温度补偿并通过将所述第二电压转换为电流来产生第二电流来产生第二电压; 以及产生具有与第二电流有关的振荡频率的时钟信号的数字信号产生电路，对某一时段的时钟信号的脉冲进行计数，并使用该特定周期的计数值作为数据生成数字信号。

    Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
    56.
    发明授权
    Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes 有权
    包括光电转换元件和高电位和低电位电极的半导体器件

    公开(公告)号：US07791012B2

    公开(公告)日：2010-09-07

    申请号：US11898834

    申请日：2007-09-17

    申请人： Atsushi Hirose

    发明人： Atsushi Hirose

    IPC分类号： H01L31/00

    CPC分类号： H01L27/14632 ,  G01J1/44 ,  G01J2003/2836 ,  H01L27/1464 ,  H01L27/14687 ,  H04N5/23241 ,  H04N5/2351

    摘要： To suppress a decrease in photosensitivity of a photoelectric conversion element provided in a semiconductor device by reducing the parasitic resistance of an amplifier circuit. In addition, the amplifier circuit which amplifies the output current of the photoelectric conversion element is operated stably. A semiconductor device includes a photoelectric conversion element, a current mirror circuit having at least two thin film transistors, a high-potential power supply electrically connected to each of the thin film transistors, and a low-potential power supply electrically connected to each of the thin film transistors. When a reference thin film transistor is an n-type, the reference thin film transistor is placed closer to the low-potential power supply than an output thin film transistor is. When a reference thin film transistor is a p-type, the reference thin film transistor is placed closer to the high-potential power supply than an output thin film transistor is.

    摘要翻译： 通过减小放大器电路的寄生电阻来抑制设置在半导体器件中的光电转换元件的光敏性的降低。 此外，放大光电转换元件的输出电流的放大电路稳定地工作。 半导体器件包括光电转换元件，具有至少两个薄膜晶体管的电流镜电路，与每个薄膜晶体管电连接的高电位电源，以及电连接到每个薄膜晶体管的低电位电源 薄膜晶体管。 当参考薄膜晶体管是n型时，参考薄膜晶体管被放置得比输出薄膜晶体管更靠近低电位电源。 当参考薄膜晶体管是p型时，参考薄膜晶体管被放置得比输出薄膜晶体管更靠近高电位电源。

    Photoelectric conversion device and electronic device provided with the photoelectric conversion device
    57.
    发明授权
    Photoelectric conversion device and electronic device provided with the photoelectric conversion device 失效
    配备有光电转换装置的光电转换装置和电子装置

    公开(公告)号：US07737478B2

    公开(公告)日：2010-06-15

    申请号：US12053948

    申请日：2008-03-24

    申请人： Makoto Yanagisawa ,  Atsushi Hirose

    发明人： Makoto Yanagisawa ,  Atsushi Hirose

    IPC分类号： H01L31/113

    CPC分类号： H04N5/35518 ,  G01J1/4204 ,  G01J1/44 ,  H01L27/14609

    摘要： An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Vout generated at the gate terminal of the MOS transistor is detected in accordance with a current Ip which is generated at the photoelectric conversion element. The voltage Vout generated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.

    摘要翻译： 包括在光电转换装置中的光电转换元件的输出端子连接到二极管连接的MOS晶体管的漏极端子和栅极端子，并且在MOS晶体管的栅极端子处产生的电压Vout被检测到 根据在光电转换元件处产生的电流Ip。 可以直接检测在MOS晶体管的栅极端子处产生的电压Vout，使得可以比通过连接负载电阻器将输出电压转换为电流的方法等等来扩大输出范围。

    Semiconductor device and electronic appliance using the same
    58.
    发明授权
    Semiconductor device and electronic appliance using the same 有权
    半导体器件和使用该器件的电子设备

    公开(公告)号：US07531784B2

    公开(公告)日：2009-05-12

    申请号：US11790482

    申请日：2007-04-25

    申请人： Tatsuya Arao ,  Atsushi Hirose ,  Kazuo Nishi ,  Yuusuke Sugawara

    发明人： Tatsuya Arao ,  Atsushi Hirose ,  Kazuo Nishi ,  Yuusuke Sugawara

    IPC分类号： H01J40/14

    CPC分类号： G01J1/44 ,  H01L27/14609 ,  H04N5/35518 ,  H04N5/374

    摘要： An object is to provide a photoelectric conversion device capable of detecting a wider range of illuminance without expansion of a range of an output voltage or output current. The photoelectric conversion device has a photoelectric conversion device including a photoelectric conversion element and an amplifier circuit electrically connected to the photoelectric conversion element, and a bias switching unit for reversing a bias to be applied to the photoelectric conversion device. The bias to be applied to the photoelectric conversion device is reversed with use of the bias switching unit, whereby the photoelectric conversion device can detect a wider range of illuminance without expansion of a range of an output voltage or output current.

    摘要翻译： 本发明的目的是提供一种能够在不扩大输出电压或输出电流的范围的情况下检测更宽范围的照度的光电转换装置。 光电转换装置具有光电转换元件，该光电转换元件包括光电转换元件和与该光电转换元件电连接的放大器电路;以及偏置切换单元，用于反转施加于光电转换元件的偏压。 使用偏置开关单元来反映施加到光电转换装置的偏置，由此光电转换装置可以在不扩大输出电压或输出电流的范围的情况下检测更宽的照度范围。