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公开(公告)号：USD573512S1
公开(公告)日：2008-07-22
申请号：US29287234
申请日：2007-07-12
申请人： Saburo Hazumi , Atsushi Hirose , Kenji Tomida
设计人： Saburo Hazumi , Atsushi Hirose , Kenji Tomida
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公开(公告)号：USD519059S1
公开(公告)日：2006-04-18
申请号：US29218967
申请日：2004-12-09
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公开(公告)号：USD853919S1
公开(公告)日：2019-07-16
申请号：US29645112
申请日：2018-04-24
申请人： Saburo Hazumi , Atsushi Hirose , Ben Uk Chang
设计人： Saburo Hazumi , Atsushi Hirose , Ben Uk Chang
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公开(公告)号：USD519882S1
公开(公告)日：2006-05-02
申请号：US29219061
申请日：2004-12-10
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公开(公告)号：US09041112B2
公开(公告)日：2015-05-26
申请号：US12707772
申请日：2010-02-18
申请人： Atsushi Hirose
发明人： Atsushi Hirose
CPC分类号： H03F1/086 , G05F3/262 , H01L21/84 , H01L27/12 , H01L2224/16225 , H03F2200/513
摘要： In a semiconductor device, where, with respect to a parasitic resistor in a current mirror circuit, a compensation resistor for compensating the parasitic resistor is provided in the current mirror circuit, the current mirror circuit includes at least two thin film transistors. The thin film transistors each have an island-shaped semiconductor film having a channel formation region and source or drain regions, a gate insulating film, a gate electrode, and source or drain electrodes, and the compensation resistor compensates the parasitic resistor of any one of the gate electrode, the source electrode, and the drain electrode. In addition, each compensation resistor has a conductive layer containing the same material as the gate electrode, the source or drain electrodes, or the source or drain regions.
摘要翻译： 在半导体器件中，电流镜电路中设置有用于补偿寄生电阻的补偿电阻器，相对于电流镜电路中的寄生电阻器，电流镜电路至少包括两个薄膜晶体管。 薄膜晶体管各自具有沟道形成区域和源极或漏极区域的岛状半导体膜，栅极绝缘膜，栅极电极和源极或漏极，并且补偿电阻器补偿任何一个的寄生电阻器 栅电极，源电极和漏电极。 此外，每个补偿电阻器具有包含与栅极电极，源极或漏极电极或源极或漏极区域相同的材料的导电层。
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公开(公告)号：US08263926B2
公开(公告)日：2012-09-11
申请号：US12752173
申请日：2010-04-01
申请人： Tatsuya Arao , Atsushi Hirose , Kazuo Nishi , Yuusuke Sugawara
发明人： Tatsuya Arao , Atsushi Hirose , Kazuo Nishi , Yuusuke Sugawara
CPC分类号： G01J1/18 , G01J1/44 , G01J2001/4406 , G09G3/3611 , G09G2320/0626 , G09G2360/144 , G09G2360/145 , H01L27/14609 , H01L27/14618 , H01L27/14643 , H01L27/14692 , H01L31/101 , H01L31/105 , H01L2924/0002 , H01L2924/00
摘要： It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.
摘要翻译： 本发明的目的是提供一种检测从弱光到强光的光的光电转换装置。 本发明涉及具有光电转换层的光电二极管的光电转换装置，包括薄膜晶体管的放大电路和偏置开关装置，其中连接到光电二极管和放大器电路的偏压通过偏置 开关意味着当入射光的强度超过预定强度时，由光电二极管检测到小于预定强度的光，并且由放大电路的薄膜晶体管检测出大于预定强度的光。 通过本发明，可以检测从弱光到强光的光。
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7.发明授权公开(公告)号：US08154480B2
公开(公告)日：2012-04-10
申请号：US12176732
申请日：2008-07-21
申请人： Hideaki Shishido , Atsushi Hirose
发明人： Hideaki Shishido , Atsushi Hirose
CPC分类号： H01L27/1214 , G01J1/02 , G01J1/0209 , G01J1/42 , G01J1/44 , G05F3/262 , G09G3/3241 , H01L27/1266 , H01L27/14609 , H01L27/14687 , H04N5/2351
摘要： A plurality of transistors in which ratios of a channel length L to a channel width W, α=W/L, are different from each other is provided in parallel as output side transistors 105a to 105c in a current mirror circuit 101 which amplifies a photocurrent of a photoelectric conversion device and an internal resistor is connected to each of the output side transistors 105a to 105c in series. The sum of currents which flow through the plurality of transistors and the internal resistor is output, whereby a transistor with large amount of α can be driven in a linear range with low illuminance, and a transistor with small amount of α can be driven in a linear range with high illuminance, so that applicable illuminance range of the photoelectric conversion device can be widened.
摘要翻译： 在通过放大光电流的电流镜电路101中，作为输出侧晶体管105a〜105c并联设置多个晶体管，其中沟道长度L与沟道宽度W，α= W / L的比例彼此不同 的一个光电转换装置和一个内部电阻器串联连接到每个输出侧晶体管105a至105c。 输出流过多个晶体管的电流和内部电阻器的总和，由此可以以低照度在线性范围内驱动具有大量α的晶体管，并且可以在a中驱动具有少量α的晶体管 具有高照度的线性范围，可以扩大光电转换装置的适用照度范围。
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公开(公告)号：US07923800B2
公开(公告)日：2011-04-12
申请号：US12000824
申请日：2007-12-18
申请人： Atsushi Hirose , Hideaki Shishido
发明人： Atsushi Hirose , Hideaki Shishido
IPC分类号： H01L31/0232
CPC分类号： H01L23/60 , H01L27/0248 , H01L27/14609 , H01L27/14643 , H01L31/02019 , H01L2924/0002 , H01L2924/00
摘要： The present invention has a photodiode and a circuit used to amplify the output of the photodiode. Two terminals are formed over the photodiode and circuit with an insulating layer interposed therebetween, and a dummy electrode with a larger area than that of either of the two terminals is formed thereover, adjacent to the two terminals. The dummy electrode is not connected to the photodiode or to the circuit of the semiconductor device. Because the dummy electrode has a wide area, damage due to electrostatic discharge occurs in the dummy electrode more easily than in the two terminals; thus, damage due to electrostatic discharge can be prevented from occurring in the semiconductor device.
摘要翻译： 本发明具有用于放大光电二极管的输出的光电二极管和电路。 两个端子形成在光电二极管和电路之间，绝缘层位于其间，并且与两个端子相邻地形成有比两个端子中的任一个更大的面积的虚拟电极。 虚拟电极不连接到光电二极管或半导体器件的电路。 由于虚拟电极的面积较大，所以在虚拟电极中比两端子容易发生静电放电造成的损伤; 因此，可以防止在半导体器件中发生由于静电放电引起的损坏。
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公开(公告)号：US20100328916A1
公开(公告)日：2010-12-30
申请号：US12817481
申请日：2010-06-17
申请人： Atsushi Hirose , Hideaki Shishido
发明人： Atsushi Hirose , Hideaki Shishido
IPC分类号： H05K7/00
CPC分类号： H01L27/0255 , H01L23/60 , H01L23/62 , H01L27/14609 , H01L27/14616 , H01L27/14692 , H01L2924/0002 , H01L2924/00
摘要： A protection circuit used for a semiconductor device is made to effectively function and the semiconductor device is prevented from being damaged by a surge. A semiconductor device includes a terminal electrode, a protection circuit, an integrated circuit, and a wiring electrically connecting the terminal electrode, the protection circuit, and the integrated circuit. The protection circuit is provided between the terminal electrode and the integrated circuit. The terminal electrode, the protection circuit, and the integrated circuit are connected to one another without causing the wiring to branch. It is possible to reduce the damage to the semiconductor device caused by electrostatic discharge. It is also possible to reduce faults in the semiconductor device.
摘要翻译： 用于半导体器件的保护电路被有效地起作用，并且防止半导体器件被浪涌损坏。 半导体器件包括端子电极，保护电路，集成电路以及电连接端子电极，保护电路和集成电路的布线。 保护电路设置在端子电极和集成电路之间。 端子电极，保护电路和集成电路彼此连接，而不会使布线分支。 可以减少由静电放电引起的对半导体器件的损坏。 也可以减少半导体器件中的故障。
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公开(公告)号：US07667272B2
公开(公告)日：2010-02-23
申请号：US11783622
申请日：2007-04-11
申请人： Atsushi Hirose
发明人： Atsushi Hirose
IPC分类号： H01L23/62
CPC分类号： H03F1/086 , G05F3/262 , H01L21/84 , H01L27/12 , H01L2224/16225 , H03F2200/513
摘要： In a semiconductor device, where, with respect to a parasitic resistor in a current mirror circuit, a compensation resistor for compensating the parasitic resistor is provided in the current mirror circuit, the current mirror circuit includes at least two thin film transistors. The thin film transistors each have an island-shaped semiconductor film having a channel formation region and source or drain regions, a gate insulating film, a gate electrode, and source or drain electrodes, and the compensation resistor compensates the parasitic resistor of any one of the gate electrode, the source electrode, and the drain electrode. In addition, each compensation resistor has a conductive layer containing the same material as the gate electrode, the source or drain electrodes, or the source or drain regions.
摘要翻译： 在半导体器件中，电流镜电路中设置有用于补偿寄生电阻的补偿电阻器，相对于电流镜电路中的寄生电阻器，电流镜电路至少包括两个薄膜晶体管。 薄膜晶体管各自具有沟道形成区域和源极或漏极区域的岛状半导体膜，栅极绝缘膜，栅极电极和源极或漏极，并且补偿电阻器补偿任何一个的寄生电阻器 栅电极，源电极和漏电极。 此外，每个补偿电阻器具有包含与栅极电极，源极或漏极电极或源极或漏极区域相同的材料的导电层。
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