公开(公告)号：US09613836B2

公开(公告)日：2017-04-04

申请号：US14308784

申请日：2014-06-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsunori Ichino ,  Kousuke Yoshihara ,  Yuichi Terashita

IPC: B05C11/08 ,  H01L21/67 ,  B05D1/00 ,  G03F7/16

CPC classification number: H01L21/6715 ,  B05C11/08 ,  B05D1/005 ,  G03F7/162

Abstract: A coating film forming apparatus includes: a substrate holding unit to horizontally hold a substrate; a rotating mechanism to rotate the substrate held by the substrate holding unit; a coating liquid supplying mechanism to supply coating liquid to form a coating film on the substrate; an annular member to rectify a gas stream above a periphery of the substrate when liquid film of the coating liquid is dried by rotation of the substrate, the annular member being provided above the periphery of the substrate and along a circumferential direction of the substrate so as to cover the periphery of the substrate; and a protrusion provided on an inner periphery of the annular member along circumferential direction of the annular member so as to protrude upward to reduce component of the gas stream flowing directly downward near an inner peripheral edge of the annular member.

公开(公告)号：US20130239887A1

公开(公告)日：2013-09-19

申请号：US13841880

申请日：2013-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kousuke Yoshihara ,  Tomohiro Iseki ,  Koji Takayanagi

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  B05D1/005 ,  G03F7/162 ,  H01L21/02282 ,  H01L21/6715

Abstract: In a coating step, a substrate is rotated at a high speed, and in that state a resist solution is discharged from a first nozzle to a central portion of the substrate to apply the resist solution over the substrate. Subsequently, in a flattening step, the rotation of the substrate is decelerated and the substrate is rotated at a low speed to flatten the resist solution on the substrate. In this event, the discharge of the resist solution by the first nozzle in the coating step is performed until a middle of the flattening step, and when the discharge of the resist solution is finished in the flattening step, the first nozzle is moved to move a discharge position of the resist solution from the central portion of the substrate. According to the present invention, the resist solution can be applied uniformly within the substrate.

Abstract translation: 在涂布步骤中，基板高速旋转，并且在该状态下，将抗蚀剂溶液从第一喷嘴排出到基板的中心部分，以将抗蚀剂溶液涂覆在基板上。 随后，在平坦化步骤中，基板的旋转减速，并且基板以低速旋转以使基板上的抗蚀剂溶液平坦化。 在这种情况下，在涂布步骤中，通过第一喷嘴对抗蚀剂溶液的排出进行到平坦化阶段的中间，并且当在平坦化步骤中完成抗蚀剂溶液的排出时，第一喷嘴移动 抗蚀剂溶液从衬底的中心部分的放电位置。 根据本发明，能够将抗蚀剂溶液均匀地涂布在基板内。

公开(公告)号：US20130174873A1

公开(公告)日：2013-07-11

申请号：US13733370

申请日：2013-01-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kousuke Yoshihara ,  Keiichi Tanaka ,  Hiroshi Ichinomiya

IPC: H05K3/26

CPC classification number: H05K3/26 ,  B08B3/024 ,  B08B5/02 ,  H01L21/67028 ,  H01L21/67034 ,  H05K2203/1509

Abstract: A substrate cleaning method is capable of preventing a liquid stream on a substrate from being cut and circuit patterns thereon from being damaged. The substrate cleaning method includes a liquid film forming process that forms a liquid film on an entire substrate surface by supplying a cleaning liquid L from a central portion of the substrate W toward a peripheral portion thereof while rotating the substrate; a drying region forming process that discharges a gas G on the substrate surface and removes the cleaning liquid on the substrate surface; and a residual liquid removing process that removes the cleaning liquid remaining between the circuit patterns by discharging a gas G while moving in a diametrical direction of the substrate.

Abstract translation: 基板清洗方法能够防止基板上的液体流被切断，并且其上的电路图案被损坏。 基板清洗方法包括：通过在旋转基板的同时从基板W的中心部向其周边部供给清洗液L而在整个基板面上形成液膜的液膜形成工序; 干燥区域形成工序，其在基板表面上排出气体G并除去基板表面上的清洗液体; 以及残留液体去除处理，其通过沿着基板的直径方向移动而排出气体G而除去残留在电路图案之间的清洗液。