利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

64 条记录 (耗时 0.028 秒)

    Semiconductor device having aligned semiconductor regions and a plurality of MISFETs
    53.
    发明授权
    Semiconductor device having aligned semiconductor regions and a plurality of MISFETs 失效
    半导体器件具有对准的半导体区域和多个MISFET

    公开(公告)号：US5519244A

    公开(公告)日：1996-05-21

    申请号：US268569

    申请日：1994-07-06

    申请人： Yuji Yatsuda ,  Takaaki Hagiwara ,  Ryuji Kondo ,  Shinichi Minami ,  Yokichi Itoh

    发明人： Yuji Yatsuda ,  Takaaki Hagiwara ,  Ryuji Kondo ,  Shinichi Minami ,  Yokichi Itoh

    IPC分类号： G11C11/34 ,  G11C16/04 ,  H01L27/105

    CPC分类号： H01L27/105 ,  G11C16/0466

    摘要： The present invention deals with a semiconductor memory circuit device, in which a memory array portion of a rectangular shape consisting of semiconductor non-volatile memory elements is formed on a main surface of the semiconductor substrate, a low voltage driver circuit (decoder) is formed along a side of the memory array portion, and a high voltage driver circuit is formed along an opposite side of the memory array portion. This permits a reduction in word line length and avoids crossing of the word lines to permit increased operation speed and, particularly, increased reading speed.

    摘要翻译： 本发明涉及一种半导体存储器电路器件，其中在半导体衬底的主表面上形成由半导体非易失性存储元件组成的矩形存储器阵列部分，形成低电压驱动电路（解码器） 沿着存储器阵列部分的一侧，并且沿着存储器阵列部分的相对侧形成高压驱动电路。 这允许字线长度减小并且避免字线的交叉以允许增加的操作速度，特别是增加的读取速度。

    Semiconductor device and method for manufacturing the same
    54.
    发明授权
    Semiconductor device and method for manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US5348898A

    公开(公告)日：1994-09-20

    申请号：US9061

    申请日：1993-01-26

    申请人： Yuji Yatsuda ,  Takaaki Hagiwara ,  Ryuji Kondo ,  Shinichi Minami ,  Yokichi Itoh

    发明人： Yuji Yatsuda ,  Takaaki Hagiwara ,  Ryuji Kondo ,  Shinichi Minami ,  Yokichi Itoh

    IPC分类号： G11C11/34 ,  G11C16/04 ,  H01L27/105 ,  H01L21/265

    CPC分类号： H01L27/105 ,  G11C16/0466

    摘要： The present invention deals with a semiconductor memory circuit device, in which a memory array portion of a rectangular shape consisting of semiconductor non-volatile memory elements is formed on a main surface of the semiconductor substrate, a low voltage driver circuit (decoder) is formed along a side of the memory array portion, and a high voltage driver circuit is formed along an opposite side of the memory array portion. This permits a reduction in word line length and avoids crossing of the word lines to permit increased operation speed and, particularly, increased reading speed.

    摘要翻译： 本发明涉及一种半导体存储器电路器件，其中在半导体衬底的主表面上形成由半导体非易失性存储元件组成的矩形存储器阵列部分，形成低电压驱动电路（解码器） 沿着存储器阵列部分的一侧，并且沿着存储器阵列部分的相对侧形成高压驱动电路。 这允许字线长度减小并且避免字线的交叉以允许增加的操作速度，特别是增加的读取速度。

    Fluorine-Containing Urethanes
    60.
    发明申请
    Fluorine-Containing Urethanes 有权
    含氟聚氨酯

    公开(公告)号：US20070245499A1

    公开(公告)日：2007-10-25

    申请号：US11659229

    申请日：2005-07-29

    申请人： Ikuo Yamamoto ,  Yutaka Ohira ,  Shinichi Minami

    发明人： Ikuo Yamamoto ,  Yutaka Ohira ,  Shinichi Minami

    IPC分类号： C07D251/34

    CPC分类号： C07D251/34 ,  Y10T428/1303 ,  Y10T428/1314 ,  Y10T428/1362

    摘要： Fluorine-containing urethanes represented by the general formula: [Rf-A1-Z-X1—OC(═O)NH—]mI[—NHC(═O)O—Y1]n[—NHC(═O)O—(ClCH2—)X2O)a—R1]k   (1) wherein I is a group derived from a polyisocyanate by removal of the isocyanato groups; Rf is perfluoroalkyl of 1 to 21 carbon atoms; A1 is a direct bond or an organic group of 1 to 21 carbon atoms; Z is —S— or —SO2—; X1 is a divalent, straight-chain or branched, C1-5 aliphatic group which may have at least one hydroxyl group; X2 is a trivalent, straight-chain or branched, C2-5 aliphatic group; Y1 is a monovalent organic group which is optionally hydroxylated; and R1 is hydrogen or alkyl of 1 to 10 carbon atoms.

    摘要翻译： 由以下通式表示的含氟聚氨酯：<？in-line-formula description =“In-line formula”end =“lead”？> [Rf-A 1 -ZX 1 -OC（-O）NH - ] m I [-NHC（-O）O] 1 - [NHC （-O）O-（ClCH 2 - ）X 2 O）a （1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中I是通过除去异氰酸酯基团而衍生自多异氰酸酯的基团; Rf是1至21个碳原子的全氟烷基; A 1是直接键或1至21个碳原子的有机基团; Z是-S-或-SO 2 - ; X 1是可以具有至少一个羟基的二价直链或支链C 1-5脂族基团; X 2是三价直链或支链C 2-5脂肪族基团; Y 1是任选羟基化的一价有机基团; 且R 1是氢或1至10个碳原子的烷基。