公开(公告)号：US20210343935A1

公开(公告)日：2021-11-04

申请号：US16884060

申请日：2020-05-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Lin Wang ,  Wei Chen ,  Po-Kai Hsu ,  Yu-Ping Wang ,  Hung-Yueh Chen

IPC: H01L43/12 ,  H01L43/02 ,  H01F10/32

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a second metal interconnection in the first IMD layer; forming a channel layer on the first metal interconnection and the second metal interconnection; forming a magnetic tunneling junction (MTJ) stack on the channel layer; and removing the MTJ stack to form a MTJ.

公开(公告)号：US20210328133A1

公开(公告)日：2021-10-21

申请号：US15930425

申请日：2020-05-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Lin Wang ,  Po-Kai Hsu ,  Hung-Yueh Chen ,  Yu-Ping Wang

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first metal interconnection on a substrate; forming a stop layer on the first metal interconnection; removing the stop layer to form a first opening; forming an electromigration enhancing layer in the first opening; and forming a second metal interconnection on the electromigration enhancing layer. Preferably, top surfaces of the electromigration enhancing layer and the stop layer are coplanar.

公开(公告)号：US11139428B2

公开(公告)日：2021-10-05

申请号：US16589083

申请日：2019-09-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Lin Wang ,  Yu-Ping Wang ,  Chen-Yi Weng ,  Chin-Yang Hsieh ,  Si-Han Tsai ,  Che-Wei Chang ,  Jing-Yin Jhang

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region; a first MTJ on the MTJ region; a first metal interconnection on the logic region; and a cap layer extending from a sidewall of the first MTJ to a sidewall of the first metal interconnection. Preferably, the cap layer on the MTJ region and the cap layer on the logic region comprise different thicknesses.

公开(公告)号：US20210151664A1

公开(公告)日：2021-05-20

申请号：US16702576

申请日：2019-12-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jia-Rong Wu ,  Rai-Min Huang ,  Ya-Huei Tsai ,  I-Fan Chang ,  Yu-Ping Wang

IPC: H01L43/02 ,  H01L43/12 ,  H01F41/34 ,  H01L27/22 ,  H01F10/32

Abstract: A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) stack on a substrate; forming a top electrode on the MTJ stack; performing a first patterning process to remove the MTJ stack along a first direction; and performing a second patterning process to remove the MTJ stack along a second direction to form MTJs on the substrate.

公开(公告)号：US20210035620A1

公开(公告)日：2021-02-04

申请号：US16556170

申请日：2019-08-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Lin Wang ,  Yu-Ping Wang ,  Chen-Yi Weng ,  Chin-Yang Hsieh ,  Yi-Hui Lee ,  Ying-Cheng Liu ,  Yi-An Shih ,  I-Ming Tseng ,  Jing-Yin Jhang ,  Chien-Ting Lin

IPC: G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

Abstract: A method for forming a semiconductor structure is disclosed. A substrate having a logic device region and a memory device region is provided. A first dielectric layer is formed on the substrate. Plural memory stack structures are formed on the first dielectric layer on the memory device region. An insulating layer is formed and conformally covers the memory stack structures and the first dielectric layer. An etching back process is performed to remove a portion of the insulating layer without exposing any portion of the memory stack structures. After the etching back process, a second dielectric layer is formed on the insulating layer and completely fills the spaces between the memory stack structures.

公开(公告)号：US20210020694A1

公开(公告)日：2021-01-21

申请号：US16812354

申请日：2020-03-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Rai-Min Huang ,  Hung-Yueh Chen ,  Ya-Huei Tsai ,  Yu-Ping Wang

IPC: H01L27/22 ,  H01L23/532 ,  G11C11/16 ,  H01L23/522 ,  H01L23/528 ,  H01L43/02

Abstract: A magnetic memory cell includes a substrate, a transistor, a first dielectric layer disposed on the substrate, a landing pad in the first dielectric layer, a second dielectric layer covering the first dielectric layer and the landing pad, a memory stack in the second dielectric layer, and a source line in the first dielectric layer. The first dielectric layer covers the transistor. The landing pad is situated in a first horizontal plane and is coupled to a drain region of the transistor. The memory stack has a bottom electrode connected to the landing pad and a top electrode electrically connected to a bit line. The source line is situated in a second horizontal plane and is connected to a source region of the transistor. The second horizontal plane and the first horizontal plane are not coplanar.

公开(公告)号：US20200227473A1

公开(公告)日：2020-07-16

申请号：US16279956

申请日：2019-02-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Hui Lee ,  I-Ming Tseng ,  Ying-Cheng Liu ,  Yi-An Shih ,  Yu-Ping Wang

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02

Abstract: An MRAM structure includes a dielectric layer. A contact hole is disposed in the dielectric layer. A contact plug fills in the contact hole and protrudes out of the dielectric layer. The contact plug includes a lower portion and an upper portion. The lower portion fills in the contact hole. The upper portion is outside of the contact hole. The upper portion has a top side and a bottom side greater than the top side. The top side and the bottom side are parallel. The bottom side is closer to the contact hole than the top side. An MRAM is disposed on the contact hole and contacts the contact plug.

公开(公告)号：US10672979B1

公开(公告)日：2020-06-02

申请号：US16281103

申请日：2019-02-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-An Shih ,  I-Ming Tseng ,  Yi-Hui Lee ,  Ying-Cheng Liu ,  Yu-Ping Wang

IPC: H01L43/12 ,  G11C11/15 ,  H01L43/02 ,  H01L27/22

Abstract: A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the IMD layer; forming a bottom electrode layer on the IMD layer; forming a cap layer on the bottom electrode layer; and removing part of the cap layer, part of the bottom electrode layer, and part of the IMD layer to form a trench.

公开(公告)号：US20190378971A1

公开(公告)日：2019-12-12

申请号：US16029641

申请日：2018-07-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Liang Chu ,  Jian-Cheng Chen ,  Yu-Ping Wang ,  Yu-Ruei Chen

IPC: H01L43/02 ,  H01L27/22 ,  H01L27/02 ,  G11C11/16

Abstract: A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, a gap between the array region and the ring of MTJ region, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, the ring of MTJ region further includes a first MTJ region and a second MTJ region extending along a first direction and a third MTJ region and a fourth MTJ region extending along a second direction.

公开(公告)号：US10355048B1

公开(公告)日：2019-07-16

申请号：US15920008

申请日：2018-03-13

Applicant: United Microelectronics Corp.

Inventor： Chung-Liang Chu ,  Yu-Ruei Chen ,  Hung-Yueh Chen ,  Yu-Ping Wang

IPC: H01L27/22 ,  H01L21/76 ,  H01L29/78 ,  G11C11/16 ,  H01L29/06 ,  H01L21/762 ,  H01L43/12 ,  H01L43/02 ,  H01L21/3205 ,  H01F10/32 ,  H01L43/08

Abstract: An isolation structure is disposed between fin field effect transistors of a magnetic random access memory (MRAM) device. The isolation structure includes a fin line substrate, having a trench crossing the fin line substrate. An oxide layer is disposed on the fin line substrate other than the trench. A liner layer is disposed on an indent surface of the trench. A nitride layer is disposed on the liner layer, partially filling the trench. An oxide residue is disposed on the nitride layer within the trench at a bottom portion of the trench. A gate-like structure is disposed on the oxide layer and also fully filling the trench.