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    Spin-transfer torque memory self-reference read and write assist methods
    51.
    发明授权
    Spin-transfer torque memory self-reference read and write assist methods 有权
    自转转矩存储器自参考读写辅助方法

    公开(公告)号：US07961509B2

    公开(公告)日：2011-06-14

    申请号：US12903305

    申请日：2010-10-13

    申请人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

    发明人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

    IPC分类号： G11C11/14

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

    摘要翻译： 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 通过自由磁层施加磁场，形成磁场修正磁隧道结数据单元。 然后通过形成第二位线读取电压的磁场修正磁隧道结数据单元施加第二读取电流，并与第一位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是否为高 电阻状态或低电阻状态。 还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

    Enhancing Read and Write Sense Margins in a Resistive Sense Element
    53.
    发明申请
    Enhancing Read and Write Sense Margins in a Resistive Sense Element 有权
    增强电阻式感应元件中的读写读数边界

    公开(公告)号：US20110075471A1

    公开(公告)日：2011-03-31

    申请号：US12961240

    申请日：2010-12-06

    申请人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    发明人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    IPC分类号： G11C11/15

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.

    摘要翻译： 一种用于增强具有电阻感测元件（RSE）的存储单元中的读和写检测余量的装置和方法，所述电阻感测元件（RSE）例如但不限于电阻随机存取存储器（RRAM）元件或自旋转矩传递随机存取存储器 ）元素。 RSE具有硬编程方向和简单的编程方向。 写入电流应用在硬编程方向或简易编程方向上，以将RSE设置为选定的编程状态。 读取电路随后在硬编程方向上传递通过单元的读取感测电流以感测所选择的单元的编程状态。

    Enhancing read and write sense margins in a resistive sense element
    54.
    发明授权
    Enhancing read and write sense margins in a resistive sense element 有权
    增强电阻感应元件中的读和写检测余量

    公开(公告)号：US07852660B2

    公开(公告)日：2010-12-14

    申请号：US12425856

    申请日：2009-04-17

    申请人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    发明人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C17/00

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.

    摘要翻译： 一种用于增强具有电阻感测元件（RSE）的存储单元中的读和写检测余量的装置和方法，所述电阻感测元件（RSE）例如但不限于电阻随机存取存储器（RRAM）元件或自旋转矩传递随机存取存储器 ）元素。 RSE具有硬编程方向和简单的编程方向。 写入电流应用在硬编程方向或简易编程方向上，以将RSE设置为选定的编程状态。 读取电路随后在硬编程方向上传递通过单元的读取感测电流以感测所选择的单元的编程状态。

    Tunable Random Bit Generator with Magnetic Tunnel Junction
    55.
    发明申请
    Tunable Random Bit Generator with Magnetic Tunnel Junction 有权
    具有磁隧道结的可调随机位发生器

    公开(公告)号：US20100109660A1

    公开(公告)日：2010-05-06

    申请号：US12399127

    申请日：2009-03-06

    申请人： Xiaobin Wang ,  Wenzhong Zhu ,  Henry Huang ,  Yiran Chen ,  Haiwen Xi

    发明人： Xiaobin Wang ,  Wenzhong Zhu ,  Henry Huang ,  Yiran Chen ,  Haiwen Xi

    IPC分类号： G01R33/02

    CPC分类号： G11C11/1675 ,  G01R33/098 ,  G06F7/588 ,  G11C11/161 ,  G11C11/1697

    摘要： A random number generator device that utilizes a magnetic tunnel junction. An AC current source is in electrical connection to the magnetic tunnel junction to provide an AC current having an amplitude and a frequency through the free layer of the magnetic tunnel junction, the AC current configured to switch the magnetization orientation of the free layer via thermal magnetization. A read circuit is used to determine the relative orientation of the free layer magnetization in relation to the reference layer magnetization orientation.

    摘要翻译： 利用磁性隧道结的随机数发生装置。 AC电流源与磁性隧道结电连接以提供具有通过磁性隧道结的自由层的振幅和频率的AC电流，AC电流被配置为通过热磁化来切换自由层的磁化取向 。 读取电路用于确定自由层磁化相对于参考层磁化取向的相对取向。

    Enhancing Read and Write Sense Margins in a Resistive Sense Element
    56.
    发明申请
    Enhancing Read and Write Sense Margins in a Resistive Sense Element 有权
    增强电阻式感应元件中的读写读数边界

    公开(公告)号：US20100085796A1

    公开(公告)日：2010-04-08

    申请号：US12425856

    申请日：2009-04-17

    申请人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    发明人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C7/00

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.

    摘要翻译： 一种用于增强具有电阻感测元件（RSE）的存储单元中的读和写检测余量的装置和方法，所述电阻感测元件（RSE）例如但不限于电阻随机存取存储器（RRAM）元件或自旋转矩传递随机存取存储器 ）元素。 RSE具有硬编程方向和简单的编程方向。 写入电流应用在硬编程方向或简易编程方向上，以将RSE设置为选定的编程状态。 读取电路随后在硬编程方向上传递通过单元的读取感测电流以感测所选择的单元的编程状态。

    Memory cell with enhanced read and write sense margins
    57.
    发明授权
    Memory cell with enhanced read and write sense margins 有权
    具有增强的读和写检测余量的存储单元

    公开(公告)号：US08199562B2

    公开(公告)日：2012-06-12

    申请号：US12961240

    申请日：2010-12-06

    申请人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    发明人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

    IPC分类号： G11C11/00 ,  G11C11/14

    CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    摘要： An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.

    摘要翻译： 一种用于增强具有电阻感测元件（RSE）的存储单元中的读和写检测余量的装置和方法，所述电阻感测元件（RSE）例如但不限于电阻随机存取存储器（RRAM）元件或自旋转矩传递随机存取存储器 ）元素。 RSE具有硬编程方向和简单的编程方向。 写入电流应用在硬编程方向或简易编程方向上，以将RSE设置为选定的编程状态。 读取电路随后在硬编程方向上传递通过单元的读取感测电流以感测所选择的单元的编程状态。

    Oscillating current assisted spin torque magnetic memory
    60.
    发明授权
    Oscillating current assisted spin torque magnetic memory 有权
    振荡电流辅助自旋转矩磁记忆

    公开(公告)号：US07800938B2

    公开(公告)日：2010-09-21

    申请号：US12251603

    申请日：2008-10-15

    申请人： Kirill Rivkin ,  Yiran Chen ,  Xiaobin Wang ,  Haiwen Xi

    发明人： Kirill Rivkin ,  Yiran Chen ,  Xiaobin Wang ,  Haiwen Xi

    IPC分类号： G11C11/00

    CPC分类号： H03B15/006 ,  G11C11/161 ,  G11C11/1675

    摘要： A memory unit having a spin torque memory cell with a ferromagnetic free layer, a ferromagnetic pinned layer and a spacer layer therebetween, with the free layer having a switchable magnetization orientation with a switching threshold. A DC current source is electrically connected to the spin torque memory cell to cause spin transfer torque in the free layer. An AC current source is electrically connected to the spin torque memory cell to produce an oscillatory polarized current capable of spin transfer torque via resonant coupling with the free layer.

    摘要翻译： 一种存储单元，其具有具有铁磁性自由层的自旋扭矩存储单元，铁磁性固定层及其间的间隔层，所述自由层具有切换阈值的可切换磁化取向。 直流电流源电连接到自旋转矩存储单元，以在自由层中引起自旋转移转矩。 AC电流源电连接到自旋转矩存储单元，以产生能够通过与自由层谐振耦合的自旋转移转矩的振荡极化电流。