公开(公告)号：US08495118B2

公开(公告)日：2013-07-23

申请号：US12399127

申请日：2009-03-06

申请人： Xiaobin Wang ,  Wenzhong Zhu ,  Henry Huang ,  Yiran Chen ,  Haiwen Xi

发明人： Xiaobin Wang ,  Wenzhong Zhu ,  Henry Huang ,  Yiran Chen ,  Haiwen Xi

IPC分类号： G06F7/58 ,  G11C11/00 ,  G11C7/00

CPC分类号： G11C11/1675 ,  G01R33/098 ,  G06F7/588 ,  G11C11/161 ,  G11C11/1697

摘要： A random number generator device that utilizes a magnetic tunnel junction. An AC current source is in electrical connection to the magnetic tunnel junction to provide an AC current having an amplitude and a frequency through the free layer of the magnetic tunnel junction, the AC current configured to switch the magnetization orientation of the free layer via thermal magnetization. A read circuit is used to determine the relative orientation of the free layer magnetization in relation to the reference layer magnetization orientation.

摘要翻译： 利用磁性隧道结的随机数发生装置。 AC电流源与磁性隧道结电连接以提供具有通过磁性隧道结的自由层的振幅和频率的AC电流，AC电流被配置为通过热磁化来切换自由层的磁化取向 。 读取电路用于确定自由层磁化相对于参考层磁化取向的相对取向。

公开(公告)号：US08199562B2

公开(公告)日：2012-06-12

申请号：US12961240

申请日：2010-12-06

申请人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

发明人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

IPC分类号： G11C11/00 ,  G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

摘要： An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.

摘要翻译： 一种用于增强具有电阻感测元件（RSE）的存储单元中的读和写检测余量的装置和方法，所述电阻感测元件（RSE）例如但不限于电阻随机存取存储器（RRAM）元件或自旋转矩传递随机存取存储器 ）元素。 RSE具有硬编程方向和简单的编程方向。 写入电流应用在硬编程方向或简易编程方向上，以将RSE设置为选定的编程状态。 读取电路随后在硬编程方向上传递通过单元的读取感测电流以感测所选择的单元的编程状态。

公开(公告)号：US20110075471A1

公开(公告)日：2011-03-31

申请号：US12961240

申请日：2010-12-06

申请人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

发明人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

IPC分类号： G11C11/15

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

摘要： An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.

摘要翻译： 一种用于增强具有电阻感测元件（RSE）的存储单元中的读和写检测余量的装置和方法，所述电阻感测元件（RSE）例如但不限于电阻随机存取存储器（RRAM）元件或自旋转矩传递随机存取存储器 ）元素。 RSE具有硬编程方向和简单的编程方向。 写入电流应用在硬编程方向或简易编程方向上，以将RSE设置为选定的编程状态。 读取电路随后在硬编程方向上传递通过单元的读取感测电流以感测所选择的单元的编程状态。

公开(公告)号：US07852660B2

公开(公告)日：2010-12-14

申请号：US12425856

申请日：2009-04-17

申请人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

发明人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C17/00

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

摘要： An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.

摘要翻译： 一种用于增强具有电阻感测元件（RSE）的存储单元中的读和写检测余量的装置和方法，所述电阻感测元件（RSE）例如但不限于电阻随机存取存储器（RRAM）元件或自旋转矩传递随机存取存储器 ）元素。 RSE具有硬编程方向和简单的编程方向。 写入电流应用在硬编程方向或简易编程方向上，以将RSE设置为选定的编程状态。 读取电路随后在硬编程方向上传递通过单元的读取感测电流以感测所选择的单元的编程状态。

公开(公告)号：US20100109660A1

公开(公告)日：2010-05-06

申请号：US12399127

申请日：2009-03-06

申请人： Xiaobin Wang ,  Wenzhong Zhu ,  Henry Huang ,  Yiran Chen ,  Haiwen Xi

发明人： Xiaobin Wang ,  Wenzhong Zhu ,  Henry Huang ,  Yiran Chen ,  Haiwen Xi

IPC分类号： G01R33/02

CPC分类号： G11C11/1675 ,  G01R33/098 ,  G06F7/588 ,  G11C11/161 ,  G11C11/1697

摘要： A random number generator device that utilizes a magnetic tunnel junction. An AC current source is in electrical connection to the magnetic tunnel junction to provide an AC current having an amplitude and a frequency through the free layer of the magnetic tunnel junction, the AC current configured to switch the magnetization orientation of the free layer via thermal magnetization. A read circuit is used to determine the relative orientation of the free layer magnetization in relation to the reference layer magnetization orientation.

摘要翻译： 利用磁性隧道结的随机数发生装置。 AC电流源与磁性隧道结电连接以提供具有通过磁性隧道结的自由层的振幅和频率的AC电流，AC电流被配置为通过热磁化来切换自由层的磁化取向 。 读取电路用于确定自由层磁化相对于参考层磁化取向的相对取向。

公开(公告)号：US20100085796A1

公开(公告)日：2010-04-08

申请号：US12425856

申请日：2009-04-17

申请人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

发明人： Wenzhong Zhu ,  Hai Li ,  Yiran Chen ,  Xiaobin Wang ,  Henry Huang ,  Haiwen Xi

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C7/00

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

摘要： An apparatus and method for enhancing read and write sense margin in a memory cell having a resistive sense element (RSE), such as but not limited to a resistive random access memory (RRAM) element or a spin-torque transfer random access memory (STRAM) element. The RSE has a hard programming direction and an easy programming direction. A write current is applied in either the hard programming direction or the easy programming direction to set the RSE to a selected programmed state. A read circuit subsequently passes a read sense current through the cell in the hard programming direction to sense the selected programmed state of the cell.

摘要翻译： 一种用于增强具有电阻感测元件（RSE）的存储单元中的读和写检测余量的装置和方法，所述电阻感测元件（RSE）例如但不限于电阻随机存取存储器（RRAM）元件或自旋转矩传递随机存取存储器 ）元素。 RSE具有硬编程方向和简单的编程方向。 写入电流应用在硬编程方向或简易编程方向上，以将RSE设置为选定的编程状态。 读取电路随后在硬编程方向上传递通过单元的读取感测电流以感测所选择的单元的编程状态。

公开(公告)号：US20120087175A1

公开(公告)日：2012-04-12

申请号：US13333598

申请日：2011-12-21

申请人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

发明人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

摘要翻译： 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格

公开(公告)号：US07881096B2

公开(公告)日：2011-02-01

申请号：US12408996

申请日：2009-03-23

申请人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

发明人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

IPC分类号： G11C17/00

CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

摘要翻译： 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格

公开(公告)号：US07826260B2

公开(公告)日：2010-11-02

申请号：US12372180

申请日：2009-02-17

申请人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

发明人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

IPC分类号： G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell, the magnetic field rotates the magnetization orientation of the free magnetic layer without switching a resistance state of the magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and the bit line read voltage is stored and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

摘要翻译： 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压并存储第一位线读取电压。 通过自由磁性层施加磁场，形成磁场修正的磁性隧道结数据单元，磁场使自由磁性层的磁化方向旋转而不转换磁性隧道结数据单元的电阻状态。 然后通过形成第二位线读取电压的磁场修改的磁性隧道结数据单元施加第二读取电流，并且存储位线读取电压并将其与第一位线读取电压进行比较，以确定第一电阻状态 磁隧道结数据单元是高电阻状态或低电阻状态。 还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

公开(公告)号：US20100103728A1

公开(公告)日：2010-04-29

申请号：US12372180

申请日：2009-02-17

申请人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

发明人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

IPC分类号： G11C11/14 ,  G11C11/416 ,  G11C7/00

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell, the magnetic field rotates the magnetization orientation of the free magnetic layer without switching a resistance state of the magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and the bit line read voltage is stored and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

摘要翻译： 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压并存储第一位线读取电压。 通过自由磁性层施加磁场，形成磁场修正的磁性隧道结数据单元，磁场使自由磁性层的磁化方向旋转而不转换磁性隧道结数据单元的电阻状态。 然后通过形成第二位线读取电压的磁场修改的磁性隧道结数据单元施加第二读取电流，并且存储位线读取电压并将其与第一位线读取电压进行比较，以确定第一电阻状态 磁隧道结数据单元是高电阻状态或低电阻状态。 还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。