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59 条记录 (耗时 0.041 秒)

    Phase change memory including a plurality of electrically conductive bodies, and manufacturing method thereof
    51.
    发明授权
    Phase change memory including a plurality of electrically conductive bodies, and manufacturing method thereof 有权
    包括多个导电体的相变存储器及其制造方法

    公开(公告)号：US07883930B2

    公开(公告)日：2011-02-08

    申请号：US12184428

    申请日：2008-08-01

    申请人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

    发明人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

    IPC分类号： H01L21/00

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16 ,  Y10S438/90

    摘要： A phase change memory including at least a storage cell which includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

    摘要翻译： 一种相变存储器，至少包括存储单元，该存储单元包括第一电极，设置在第一电极上的导电部分，并且具有设置在第一电极上的具有大致相同形状的至少两个导电体，导电体间隔开 通过具有高电阻的高电阻膜，设置在导电部分上并具有相变材料的记录层，其可以在具有第一电阻率的第一相位状态和第二相位状态之间变化，具有不同于第二电阻率的第二电阻率 第一电阻率和设置在记录层上的第二电极。

    Optical disk apparatus for distinguishing recording media including single-layer and double-layer H-L media and L-H medium
    52.
    发明授权
    Optical disk apparatus for distinguishing recording media including single-layer and double-layer H-L media and L-H medium 失效
    用于区分包括单层和双层H-L介质和L-H介质的记录介质的光盘装置

    公开(公告)号：US07477586B2

    公开(公告)日：2009-01-13

    申请号：US11018152

    申请日：2004-12-22

    申请人： Ryosuke Yamamoto ,  Sumio Ashida

    发明人： Ryosuke Yamamoto ,  Sumio Ashida

    IPC分类号： G11B7/004

    CPC分类号： G11B19/127 ,  G11B7/00736 ,  G11B7/24038 ,  G11B2007/0006

    摘要： The present invention provides an optical disk apparatus in which a first, second, third, and fourth optical disks are selectively installed, the first and second optical disks having different recording film characteristics and both having a single-layer recording layer, the third and fourth optical disks having different recording film characteristics and both having a double-layer recording layer. A control section determines which of the first to fourth optical disks has been installed, on the basis of the level of a reproduction signal from an optical head. Recording media serving as the optical disks are formed so that the light reflectances of a single-layer L-H medium in an initialized state, an L0 layer of a double-layer H-L medium in the initialized state, and an L0 layer of a double-layer L-H medium in an uninitialized state do not overlap the light reflectance of a single-layer H-L medium in the initialized state.

    摘要翻译： 本发明提供一种光盘装置，其中选择性地安装第一，第二，第三和第四光盘，第一和第二光盘具有不同的记录膜特性，并且都具有单层记录层，第三和第四 具有不同记录膜特性并且具有双层记录层的光盘。 基于来自光学头的再现信号的电平，控制部分确定已经安装了第一至第四光盘中的哪一个。 形成作为光盘的记录介质，使得处于初始化状态的单层LH介质的光反射率，初始化状态下的双层HL介质的L0层和双层的L0层 未初始化状态的LH介质与初始化状态下的单层HL介质的光反射率不重叠。

    Phase change memory and manufacturing method thereof
    54.
    发明申请
    Phase change memory and manufacturing method thereof 审中-公开
    相变记忆及其制造方法

    公开(公告)号：US20060261379A1

    公开(公告)日：2006-11-23

    申请号：US11272751

    申请日：2005-11-15

    申请人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

    发明人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

    IPC分类号： H01L29/768

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16 ,  Y10S438/90

    摘要： Even if sizes of storage cells are reduced in a phase change memory, properties of the respective storage cells can be set to be approximately equal to one another and a current amount required for phase change can be reduced sufficiently. The phase change memory includes at least a storage cell. The storage cell includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

    摘要翻译： 即使存储单元的尺寸在相变存储器中减少，各个存储单元的特性可以被设置为大致相等，并且可以充分地减少相变所需的电流量。 相变存储器至少包括存储单元。 存储单元包括第一电极，设置在第一电极上的导电部分，并且具有至少两个导电体，其具有设置在第一电极上的大致相同的形状，导电体由高电阻膜隔开，高电阻 电阻，设置在导电部分上并具有能够在具有第一电阻率的第一相位状态与第二相位状态之间变化的相变材料的记录层，其具有不同于第一电阻率的第二电阻率;以及第二电极 提供在记录层上。