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公开(公告)号：US5450237A
公开(公告)日：1995-09-12
申请号：US300070
申请日：1994-09-02
申请人： Toshihiko Yoshida , Osamu Yamamoto , Saburo Yamamoto , Shohichi Kato , Masumi Nakamichi , Toshimasa Hamada , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Osamu Yamamoto , Saburo Yamamoto , Shohichi Kato , Masumi Nakamichi , Toshimasa Hamada , Sadayoshi Matsui
CPC分类号： G11B7/1374 , G02B27/58 , G11B7/123 , G11B7/1381
摘要： A hyper-resolution optical device which can focus a beam of light to a diameter less than the diffraction limit. The optical device has an optical system disposed on a transmissive substrate. One component in the optical system is a hyper-resolution optical component which passes or reflects light and which has a central portion which does not pass or reflect light, respectively. The hyper-resolution optical component can be integrated with the transmissive substrate. Such optical devices are particularly suitable for optical pick-up devices, laser printers, sensors.
摘要翻译： 可以将光束聚焦到小于衍射极限的直径的超分辨率光学装置。 光学装置具有设置在透射基板上的光学系统。 光学系统中的一个部件是通过或反射光的超分辨率光学部件，并且具有不分别通过或反射光的中心部分。 超分辨率光学部件可以与透射基板一体化。 这种光学装置特别适用于光学拾取装置，激光打印机，传感器。
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52.发明授权Light wavelength converter for a wavelength of laser beams into a short wavelength 失效激光波长波长波长变化的光波长变换器
公开(公告)号：US5224195A
公开(公告)日：1993-06-29
申请号：US723500
申请日：1991-06-28
CPC分类号： G02F1/377 , G02F2001/374 , G02F2201/302
摘要： A light wavelength converter which includes a laser beam source for radiating fundamental waves, a first optical waveguide formed on a substrate so as to convert the fundamental waves into harmonics which are radiated through the substrate, a grating coupler provided on the substrate so as to receive the harmonics propagated through the substrate, and a second optical waveguide formed on the substrate, the second optical guide being connected to the grating coupler so as to radiate the harmonics outside.
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53.发明授权
公开(公告)号：US5130210A
公开(公告)日：1992-07-14
申请号：US571861
申请日：1990-08-24
申请人： Hiroyuki Iwasaki , Fumiya Ishizaki , Toshihiko Yoshida , Nobuaki Tagaya , Isao Mukaizawa , Hiroshi Seto
发明人： Hiroyuki Iwasaki , Fumiya Ishizaki , Toshihiko Yoshida , Nobuaki Tagaya , Isao Mukaizawa , Hiroshi Seto
IPC分类号： C01G25/02 , C04B35/486 , H01M8/12
CPC分类号： C01G25/02 , C04B35/486 , H01M8/1253 , C01P2004/61 , C01P2004/62 , C01P2006/40 , C01P2006/90 , Y02E60/525 , Y02P70/56
摘要： The mechanical strength of stabilized zirconia is improved without lowering the ion conductivity by providing a solid electrolyte comprising stabilized zirconia and a metal oxide dispersed within grains or grain boundaries of stabilized zirconia, the metal oxide having an average submicron particle size and stabilized zirconia having an average particle size larger than 1 micron, typically larger than 10 .mu.m or even 100 .mu.m.
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54.发明授权Optical pumping-type solid-state laser apparatus with a semiconductor laser device 失效具有半导体激光装置的光泵浦式固态激光装置
公开(公告)号：US5025449A
公开(公告)日：1991-06-18
申请号：US500039
申请日：1990-03-27
申请人： Osamu Yamamoto , Toshihiko Yoshida
发明人： Osamu Yamamoto , Toshihiko Yoshida
IPC分类号： H01S3/094 , H01S3/0941 , H01S3/131 , H01S5/024 , H01S5/06 , H01S5/0683
CPC分类号： H01S5/0683 , H01S3/09415 , H01S3/09408 , H01S3/1312 , H01S5/02415 , H01S5/06837 , H01S5/0687
摘要： Disclosed is an optical pumping-type solid-state laser apparatus in which a semiconductor laser device is used as a light source for optical pumping. The solid-state laser apparatus includes first and second photodetectors. The former detects the amount of light emitted from the semiconductor laser device, and the latter detects the amount of laser light transmitted through a filter plate which has the same light-absorbance characteristics as that of the solid-state laser. In accordance with the detected results, a driving circuit drives the semiconductor laser device to obtain a laser beam with an appropriate output level and a temperature regulator regulates the temperature of the semiconductor laser device so that the wavelength of the laser light to be emitted therefrom is accurately adjusted to be the same as that of the light to be efficiently absorbed by the solid-state laser. The laser beam with the accurately adjusted wavelength is used for optically pumping the solid-state laser.
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公开(公告)号：US5007694A
公开(公告)日：1991-04-16
申请号：US457320
申请日：1989-12-28
申请人： Osamu Yamamoto , Toshihiko Yoshida
发明人： Osamu Yamamoto , Toshihiko Yoshida
CPC分类号： G02F1/377
摘要： A light wavelength converter comprising a substrate that is made of a material attaining a non-linear effect; an optical waveguide that is formed within said substrate; a light source that irradiates said optical waveguide with a pair of lights having a fundamental waveguide, said pair of lights being propagated within said optical waveguide and intersecting each other within said optical waveguide to thereby generate a second harmonic light; and a light deflection means that changes the intersection angle between the pair of waveguiding lights based on an electric signal that is input into said light deflection means, whereby, the phase matching condition of a pair of incident laser beams can be readily satisfied and, even when the ambient temperature changes, the second harmonic light can be stably generated.
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公开(公告)号：US4910744A
公开(公告)日：1990-03-20
申请号：US130352
申请日：1987-12-08
CPC分类号： H01S5/227 , H01S5/0035 , H01S5/2277
摘要： A semiconductor laser device comprising a semiconductor substrate, an active layer having a refractive index greater than that of said substrate and having an energy gap smaller than that of said substrate, and a cladding layer having a conductivity type different from that of said substrate, in that order, resulting in a double-heterostructure, wherein two parallel grooves with a given distance therebetween are disposed in the double-heterostructure so as to reach said substrate and a first burying layer having the same conductivity type as said substrate, a second burying layer having a conductivity type different from that of said substrate and a third burying layer having the same conductivity type as said substrate are disposed outside of the two grooves in that order, and moreover a semiconductor layer with the flat surface having a conductivity type different from that of said substrate is disposed over the third burying layer and the area positioned between the two parallel grooves.
摘要翻译： 一种半导体激光器件，包括半导体衬底，具有比所述衬底的折射率大的折射率并且具有比所述衬底的能隙小的能隙的有源层以及具有与所述衬底的导电类型不同的导电类型的覆层， 导致双异质结构，其中在双异质结构中设置两个具有给定距离的平行凹槽，以便到达所述衬底和具有与所述衬底相同的导电类型的第一掩埋层，第二掩埋层 具有不同于所述衬底的导电类型和具有与所述衬底相同的导电类型的第三掩埋层以该顺序布置在两个沟槽的外侧，此外，具有不同于其的导电类型的平坦表面的半导体层 的所述衬底设置在所述第三掩埋层上并且位于所述两个平行的区域之间 oves。
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公开(公告)号：US4806454A
公开(公告)日：1989-02-21
申请号：US65145
申请日：1987-06-24
CPC分类号： H01S5/12 , G02B5/1857 , G02B5/32 , G02B6/124 , H01S5/124 , Y10S359/90
摘要： A method for the formation of a diffraction grating on a substrate using a holographic technique and an etching technique, wherein the periodicity of the pattern of the diffraction grating can be changed at will by a change of the light-path length of one of the two light fluxes from a holographic exposing system.
摘要翻译： 一种使用全息技术和蚀刻技术在基板上形成衍射光栅的方法，其中衍射光栅的图案的周期可以随意地通过两个中的一个的光路长度的变化而改变 来自全息曝光系统的光通量。
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公开(公告)号：US4803690A
公开(公告)日：1989-02-07
申请号：US839869
申请日：1986-03-13
CPC分类号： H01S5/12 , H01S5/1215
摘要： A semiconductor laser comprising a triple-layered structure composed of an active layer for laser oscillation and a pair of optical guiding layers sandwiching said active layer therebetween, wherein the refractive index of each of said optical guiding layers is smaller than that of said active layer, and the bandgap of each of said optical guiding layers is greater than that of said active layer, and moreover diffraction gratings with different pitches are positioned on the outer side of each of said optical guiding layers.
摘要翻译： 一种半导体激光器，包括由用于激光振荡的有源层组成的三层结构和夹在其间的所述有源层的一对光导层，其中每个所述光导层的折射率小于所述有源层的折射率， 并且每个所述光导层的带隙大于所述有源层的带隙，此外，具有不同间距的衍射光栅位于每个所述光导层的外侧。
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公开(公告)号：US4799227A
公开(公告)日：1989-01-17
申请号：US066510
申请日：1987-06-26
CPC分类号： H01S5/227 , H01S5/2206 , H01S5/2275
摘要： A semiconductor laser device having a buried heterostructure which includes a multi-layered crystal structure, containing an active layer for laser oscillation, on a substrate, said multi-layered crystal structure having a striped mesa-portion, a multi-layered structure surrounding said mesa-portion and a burying layer disposed on an upper face of said striped mesa-portion. The unique structure results in a heterojunction at each side of the active layer.
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公开(公告)号：US4771434A
公开(公告)日：1988-09-13
申请号：US880167
申请日：1987-06-30
CPC分类号： H01S5/0264
摘要： A semiconductor laser apparatus comprising a laser-oscillating area and a light-detecting area, both of which are formed on a single substrate, wherein said laser-oscillating area and said light-detecting area have a common semiconductor layer with a first polarity disposed on said substrate and a common active layer disposed on said semiconductor layer, and said layer-oscillating area of said laser-oscillating area and/or said light-detecting area has a cladding layer with a second polarity disposed on said active layer, said laser-oscillating area and said light-detecting area being separated by a groove formed from the upper face of said cladding layer to the region below said active layer, and the active layer of said laser-oscillation area being flat while the active layer of said light-detecting area is sloped.
摘要翻译： 一种半导体激光装置，包括激光振荡区域和光检测区域，两者都形成在单个基板上，其中所述激光振荡区域和所述光检测区域具有第一极性的公共半导体层， 所述衬底和设置在所述半导体层上的公共有源层，并且所述激光振荡区域和/或所述光检测区域的所述层振荡区域具有设置在所述有源层上的具有第二极性的包层， 振荡区域和所述光检测区域由由所述包覆层的上表面形成的沟槽分隔成所述有源层下方的区域，并且所述激光振荡区域的有源层是平坦的， 检测区域倾斜。
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