公开(公告)号：US20240022042A1

公开(公告)日：2024-01-18

申请号：US18057979

申请日：2022-11-22

Applicant: Lumentum Japan, Inc.

Inventor： Atsushi NAKAMURA

IPC: H01S5/0625 ,  H01S5/183 ,  H01S5/12 ,  H01S5/028

CPC classification number: H01S5/06258 ,  H01S5/1835 ,  H01S5/124 ,  H01S5/0287

Abstract: Provided is a semiconductor laser that includes: an active layer; a grating layer including a phase shift portion with partially different grating periods; a contact layer placed above the grating layer; a highly resistive element higher in electric resistance than the contact layer; and an electrode in contact with the contact layer, and the highly resistive element is below at least a part of a portion of the electrode that overlaps with the phase shift portion.

公开(公告)号：US20230291177A1

公开(公告)日：2023-09-14

申请号：US18199960

申请日：2023-05-21

Applicant: TRUELIGHT CORPORATION

Inventor： Chien Hung Pan ,  Cheng Zu Wu

IPC: H01S5/11 ,  H01S5/183 ,  H01S5/32 ,  H01S5/12 ,  H01S5/185

CPC classification number: H01S5/11 ,  H01S5/1215 ,  H01S5/124 ,  H01S5/183 ,  H01S5/185 ,  H01S5/3211 ,  H01S2304/04

Abstract: The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula:




Λ
=
m

λ

2
∗

n

e
f
f




;




in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula:




Λ
=
O

λ

2
∗

n

e
f
f




.




Wherein, Λ is the length of grating period, λ is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2. The first grating region is a first-order grating region, and the second grating region is a second-order grating region, so as to form a hybrid grating structure in the grating layer. The surface emitting laser emits laser light perpendicularly from a light-emitting surface defined by the second grating region.

公开(公告)号：US11677215B2

公开(公告)日：2023-06-13

申请号：US17408592

申请日：2021-08-23

Applicant: Ramot at Tel-Aviv University Ltd.

Inventor： Roei Aviram Cohen ,  Ofer Amrani ,  Shlomo Ruschin

IPC: H01S5/10 ,  H01S5/12 ,  H01S5/06

CPC classification number: H01S5/1003 ,  H01S5/1028 ,  H01S5/124 ,  H01S5/0608

Abstract: Structures for response shaping in frequency and time domain, include an optical response shaper and/or a modulator device with multiple injection. The device comprises a resonator having an enclosed geometric structure, for example a ring or racetrack structure, at least two injecting optical waveguides approaching the resonator to define at least two coupling regions between the resonator and the injecting waveguides, and may define at least two Free Spectral Range states.
One or both of the coupling regions has a coupling coefficient selected for a predetermined frequency or time response, and the coupling coefficient or other device parameters may be variable, in some case in real time to render the response programmably variable.

公开(公告)号：US20180323580A1

公开(公告)日：2018-11-08

申请号：US15967139

申请日：2018-04-30

Applicant: Thorlabs Quantum Electronics, Inc.

Inventor： Feng XIE ,  John PHAM ,  Michael P. STOCKER ,  Kevin LASCOLA

IPC: H01S5/34 ,  H01S5/22 ,  H01S5/12 ,  H01S5/042 ,  H01S5/028

CPC classification number: H01S5/3402 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/1209 ,  H01S5/124 ,  H01S5/22

Abstract: An interband cascade laser including: a ridge waveguide having alternating first and second regions; wherein the first region has a constant width, and the second region has a width that matches that of the first region at boundaries between the first region and the second region, and the width of the second region increases to a maximum that is larger than the width of the first region, such that a partially-corrugated sidewall along each side of the ridge waveguide is formed; wherein the first region comprises a grating structure, and due to periodic nature of the first region, the grating structure is in a form of a sampled grating; and wherein the partially-corrugated sidewall increases waveguide losses for radiation in higher order lateral modes as compared to the fundamental waveguide mode.

公开(公告)号：US09941666B2

公开(公告)日：2018-04-10

申请号：US15372334

申请日：2016-12-07

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Yukihiro Tsuji

IPC: H01S5/227 ,  H01S5/12 ,  H01S5/34 ,  H01S5/22

CPC classification number: H01S5/2275 ,  H01S5/1215 ,  H01S5/1225 ,  H01S5/1228 ,  H01S5/124 ,  H01S5/2224 ,  H01S5/3401

Abstract: A method for producing a quantum cascade laser includes the steps of forming a laser structure including a mesa structure and a buried region embedding the mesa structure; forming a mask on the laser structure, the mask including a first pattern that defines a λ/4 period distribution Bragg reflector structure and a second pattern that defines a 3λ/4 period distribution Bragg reflector structure; and forming a first distribution Bragg reflector structure, a second distribution Bragg reflector structure, and a semiconductor waveguide structure by dry-etching the laser structure through the mask, the semiconductor waveguide structure including the mesa structure that has first and second end facets. The first distribution Bragg reflector structure is optically coupled to the first end facet. The second distribution Bragg reflector structure is optically coupled to the second end facet. Here, λ denotes a value of an oscillation wavelength of the quantum cascade laser in vacuum.

公开(公告)号：US09871347B2

公开(公告)日：2018-01-16

申请号：US15281426

申请日：2016-09-30

Applicant: FUJITSU LIMITED ,  NEC Corporation ,  The University of Tokyo

Inventor： Nobuaki Hatori ,  Masashige Ishizaka ,  Takanori Shimizu ,  Yasuhiko Arakawa ,  Satoshi Iwamoto ,  Katsuaki Tanabe

IPC: G02B6/122 ,  H01S5/20 ,  H01S5/10 ,  H01S5/12 ,  H04B10/40 ,  H04B10/50 ,  H04B10/516 ,  H01S5/026 ,  H01S5/125 ,  H01S5/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/042 ,  H01S5/14 ,  H01S5/34

CPC classification number: H01S5/2027 ,  H01S5/0085 ,  H01S5/021 ,  H01S5/02276 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/12 ,  H01S5/1237 ,  H01S5/124 ,  H01S5/125 ,  H01S5/141 ,  H01S5/3412 ,  H04B10/40 ,  H04B10/501 ,  H04B10/516

Abstract: A semiconductor light source includes a substrate, an optical waveguide having a reflection structure provided on the substrate with an oxide film in between and a semiconductor light emitting element provided on the optical waveguide. The optical waveguide includes a constant width core layer portion located in a center portion, tapered core layer portions that are provided on either side of the constant width core layer and of which the core width gradually increases and a constant width core layer portion for an optical wire waveguide. The semiconductor light emitting element is placed so as to cover at least a portion of the tapered core layer portions on both sides.

公开(公告)号：US20170317471A1

公开(公告)日：2017-11-02

申请号：US15522210

申请日：2015-11-06

Applicant: Agency for Science, Technology and Research

Inventor： Ter-hoe Lor ,  Qian Wang ,  Vivek Krishnamurthy

IPC: H01S5/12 ,  H01S5/22 ,  H01S5/125 ,  H01S5/10 ,  H01S5/343 ,  H01S5/02

CPC classification number: H01S5/1237 ,  G02B6/1228 ,  G02B6/124 ,  G02B6/14 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12107 ,  G02B2006/12121 ,  G02B2006/12195 ,  H01S5/0085 ,  H01S5/021 ,  H01S5/0422 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1039 ,  H01S5/124 ,  H01S5/125 ,  H01S5/22 ,  H01S5/34306 ,  H01S5/4012 ,  H01S5/4087

Abstract: According to various embodiments, there is provided an optical device including a first waveguide configured to guide a light wave along a longitudinal axis; a first grating at least partially formed in the first waveguide, the first grating arranged away from the longitudinal axis in a first direction; and a second grating at least partially formed in the first waveguide, the second grating arranged away from the longitudinal axis in a second direction; wherein the second direction is different from the first direction.

公开(公告)号：US09768585B2

公开(公告)日：2017-09-19

申请号：US14661772

申请日：2015-03-18

Applicant: Applied Optoelectronics, Inc.

Inventor： Jun Zheng ,  Stefan Murry ,  Klaus Alexander Anselm

IPC: H01S5/06 ,  H01S3/10 ,  H01S3/08 ,  H01S5/0625 ,  H01S5/0687 ,  H01S5/028 ,  H01S5/024 ,  H01S5/40 ,  H01S5/12

CPC classification number: H01S5/06256 ,  H01S5/02415 ,  H01S5/0287 ,  H01S5/06258 ,  H01S5/0687 ,  H01S5/124 ,  H01S5/4012 ,  H01S5/4087

Abstract: A parallel cavity tunable laser generally includes a semiconductor laser body defining a plurality of parallel laser cavities with a common output. Each of the parallel laser cavities is configured to be driven independently to generate laser light at a wavelength within a different respective wavelength range. The wavelength of the light generated in each of the laser cavities may be tuned, in response to a temperature change, to a channel wavelength within the respective wavelength range. The laser light generated in each selected one of the laser cavities is emitted from the common output at a front facet of the laser body. By selectively generating light in one or more of the laser cavities, one or more channel wavelengths may be selected for lasing and transmission.

公开(公告)号：US20170170631A1

公开(公告)日：2017-06-15

申请号：US15116076

申请日：2015-02-04

Applicant: ALCATEL LUCENT

Inventor： Nicolas CHIMOT ,  Helene DEBRAGEAS-SIL-LARD

IPC: H01S5/12 ,  H01S5/10 ,  H01S5/0625

CPC classification number: H01S5/1225 ,  H01S5/06258 ,  H01S5/1064 ,  H01S5/1215 ,  H01S5/1228 ,  H01S5/1237 ,  H01S5/124

Abstract: A tunable laser device comprises a multi-section distributed feedback (DFB) laser having a first Bragg section including a waveguide and a Bragg grating, a second Bragg section comprising a waveguide and a Bragg grating, and a phase section being longitudinally located between the first Bragg section and the second Bragg section. The phase section is made of a passive material, and each Bragg section has a first longitudinal end joining the phase section and a second longitudinal end opposed to the phase section. The Bragg grating of at least one Bragg section has a grating coupling coefficient which decreases from the first longitudinal end to the second longitudinal end of the at least one Bragg section.

公开(公告)号：US20170141539A1

公开(公告)日：2017-05-18

申请号：US15349093

申请日：2016-11-11

Applicant: William S. RING

Inventor： William S. RING

IPC: H01S5/125 ,  G02B6/124 ,  H01S5/10 ,  H01S5/026 ,  H01S5/227 ,  H01S5/343 ,  G02B6/13 ,  G02B6/12

CPC classification number: H01S5/125 ,  G02B6/00 ,  G02B6/12007 ,  G02B6/124 ,  G02B6/131 ,  G02B2006/12104 ,  H01S5/026 ,  H01S5/0268 ,  H01S5/0287 ,  H01S5/1021 ,  H01S5/124 ,  H01S5/141 ,  H01S5/209 ,  H01S5/2275 ,  H01S5/343 ,  H01S5/34306 ,  H01S5/4087

Abstract: A photonic integrated device (PID) for generating single and multiple wavelength optical signals is provided. The PID includes first and second reflective structures having first and second predetermined reflectivities, respectively. A common waveguide is optically coupled to the first reflective structure, and at least one semiconductor waveguide is optically coupled to the second reflective structure. The PID further includes at least one active gain region that is disposed between the first and second reflective structures. In various embodiments, the PID includes at least one of a dielectric waveguide based wavelength dependent element and a dielectric Bragg stack.