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    Surface Emitting Laser With Hybrid Grating Structure
    2.
    发明公开
    Surface Emitting Laser With Hybrid Grating Structure 审中-公开

    公开(公告)号：US20230291177A1

    公开(公告)日：2023-09-14

    申请号：US18199960

    申请日：2023-05-21

    申请人： TRUELIGHT CORPORATION

    发明人： Chien Hung Pan ,  Cheng Zu Wu

    IPC分类号： H01S5/11 ,  H01S5/183 ,  H01S5/32 ,  H01S5/12 ,  H01S5/185

    CPC分类号： H01S5/11 ,  H01S5/1215 ,  H01S5/124 ,  H01S5/183 ,  H01S5/185 ,  H01S5/3211 ,  H01S2304/04

    摘要： The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula:




    Λ
    =
    m

    λ

    2
    ∗

    n

    e
    f
    f




    ;




    in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula:




    Λ
    =
    O

    λ

    2
    ∗

    n

    e
    f
    f




    .




    Wherein, Λ is the length of grating period, λ is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2. The first grating region is a first-order grating region, and the second grating region is a second-order grating region, so as to form a hybrid grating structure in the grating layer. The surface emitting laser emits laser light perpendicularly from a light-emitting surface defined by the second grating region.

    Response shaping by multiple injection in a ring-type structure
    3.
    发明授权
    Response shaping by multiple injection in a ring-type structure 有权

    公开(公告)号：US11677215B2

    公开(公告)日：2023-06-13

    申请号：US17408592

    申请日：2021-08-23

    申请人： Ramot at Tel-Aviv University Ltd.

    发明人： Roei Aviram Cohen ,  Ofer Amrani ,  Shlomo Ruschin

    IPC分类号： H01S5/10 ,  H01S5/12 ,  H01S5/06

    CPC分类号： H01S5/1003 ,  H01S5/1028 ,  H01S5/124 ,  H01S5/0608

    摘要： Structures for response shaping in frequency and time domain, include an optical response shaper and/or a modulator device with multiple injection. The device comprises a resonator having an enclosed geometric structure, for example a ring or racetrack structure, at least two injecting optical waveguides approaching the resonator to define at least two coupling regions between the resonator and the injecting waveguides, and may define at least two Free Spectral Range states.
    One or both of the coupling regions has a coupling coefficient selected for a predetermined frequency or time response, and the coupling coefficient or other device parameters may be variable, in some case in real time to render the response programmably variable.

    Method for producing quantum cascade laser and quantum cascade laser
    5.
    发明授权
    Method for producing quantum cascade laser and quantum cascade laser 有权

    公开(公告)号：US09941666B2

    公开(公告)日：2018-04-10

    申请号：US15372334

    申请日：2016-12-07

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Yukihiro Tsuji

    IPC分类号： H01S5/227 ,  H01S5/12 ,  H01S5/34 ,  H01S5/22

    CPC分类号： H01S5/2275 ,  H01S5/1215 ,  H01S5/1225 ,  H01S5/1228 ,  H01S5/124 ,  H01S5/2224 ,  H01S5/3401

    摘要： A method for producing a quantum cascade laser includes the steps of forming a laser structure including a mesa structure and a buried region embedding the mesa structure; forming a mask on the laser structure, the mask including a first pattern that defines a λ/4 period distribution Bragg reflector structure and a second pattern that defines a 3λ/4 period distribution Bragg reflector structure; and forming a first distribution Bragg reflector structure, a second distribution Bragg reflector structure, and a semiconductor waveguide structure by dry-etching the laser structure through the mask, the semiconductor waveguide structure including the mesa structure that has first and second end facets. The first distribution Bragg reflector structure is optically coupled to the first end facet. The second distribution Bragg reflector structure is optically coupled to the second end facet. Here, λ denotes a value of an oscillation wavelength of the quantum cascade laser in vacuum.

    TUNABLE LASER DEVICE
    9.
    发明申请
    TUNABLE LASER DEVICE 审中-公开

    公开(公告)号：US20170170631A1

    公开(公告)日：2017-06-15

    申请号：US15116076

    申请日：2015-02-04

    申请人： ALCATEL LUCENT

    发明人： Nicolas CHIMOT ,  Helene DEBRAGEAS-SIL-LARD

    IPC分类号： H01S5/12 ,  H01S5/10 ,  H01S5/0625

    CPC分类号： H01S5/1225 ,  H01S5/06258 ,  H01S5/1064 ,  H01S5/1215 ,  H01S5/1228 ,  H01S5/1237 ,  H01S5/124

    摘要： A tunable laser device comprises a multi-section distributed feedback (DFB) laser having a first Bragg section including a waveguide and a Bragg grating, a second Bragg section comprising a waveguide and a Bragg grating, and a phase section being longitudinally located between the first Bragg section and the second Bragg section. The phase section is made of a passive material, and each Bragg section has a first longitudinal end joining the phase section and a second longitudinal end opposed to the phase section. The Bragg grating of at least one Bragg section has a grating coupling coefficient which decreases from the first longitudinal end to the second longitudinal end of the at least one Bragg section.