公开(公告)号：US20110007763A1

公开(公告)日：2011-01-13

申请号：US12878298

申请日：2010-09-09

申请人： Masaki UENO ,  Takashi KYONO

发明人： Masaki UENO ,  Takashi KYONO

IPC分类号： H01S5/323

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S2302/00 ,  H01S2304/04

摘要： A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first thickness. In the formation of the first InGaN film, a first gallium raw material, a first indium raw material, and a first nitrogen raw material are supplied to a reactor to deposit a first InGaN for forming the first InGaN film at a first temperature, and the first InGaN has a thickness thinner than the first thickness. Next, the first InGaN is heat-treated at a second temperature lower than the first temperature in the reactor, while supplying a second indium raw material and a second nitrogen raw material to the reactor. Then, after the heat treatment, a second InGaN is deposited at least once to form the first InGaN film.

摘要翻译： 制造氮化物半导体激光器的方法包括在氮化镓基半导体区域上形成用于有源层的第一InGaN膜，并且第一InGaN膜具有第一厚度。 在第一InGaN膜的形成中，将第一镓原料，第一铟原料和第一氮原料供给到反应器，以在第一温度下沉积用于形成第一InGaN膜的第一InGaN， 第一InGaN具有比第一厚度更薄的厚度。 接着，将第一InGaN在比反应器中的第一温度低的第二温度下进行热处理，同时向反应器供给第二铟原料和第二氮原料。 然后，在热处理之后，将至少一次沉积第二InGaN以形成第一InGaN膜。

公开(公告)号：US20110175103A1

公开(公告)日：2011-07-21

申请号：US12836222

申请日：2010-07-14

申请人： Shinji TOKUYAMA ,  Masahiro ADACHI ,  Takashi KYONO ,  Yoshihiro SAITO

发明人： Shinji TOKUYAMA ,  Masahiro ADACHI ,  Takashi KYONO ,  Yoshihiro SAITO

IPC分类号： H01L29/45 ,  H01L21/02

CPC分类号： H01L33/40 ,  H01L33/16 ,  H01L33/32

摘要： A semiconductor device has a satisfactory ohmic contact on a p-type principal surface tilting from a c-plane. The principal surface 13a of a p-type semiconductor region 13 extends along a plane tilting from a c-axis (axis ) of hexagonal group-III nitride. A metal layer 15 is deposited on the principal surface 13a of the p-type semiconductor region 13. The metal layer 15 and the p-type semiconductor region 13 are separated by an interface 17 such that the metal layer functions as a non-alloy electrode. Since the hexagonal group-III nitride contains gallium as a group-III element, the principal surface 13a comprising the hexagonal group-III nitride is more susceptible to oxidation compared to the c-plane of the hexagonal group-III nitride. The interface 17 avoids an increase in amount of oxide after the formation of the metal layer 15 for the electrode.

摘要翻译： 半导体器件在从c面倾斜的p型主表面上具有令人满意的欧姆接触。 p型半导体区域13的主表面13a沿着从六方晶III族氮化物的c轴（轴<0001>）倾斜的平面延伸。 金属层15沉积在p型半导体区域13的主表面13a上。金属层15和p型半导体区域13被界面17分离，使得金属层用作非合金电极 。 由于六方晶III族氮化物含有镓作为III族元素，所以与六方晶III族氮化物的c面相比，包含六方晶III族氮化物的主表面13a更易于氧化。 界面17避免了形成用于电极的金属层15之后的氧化物的量的增加。

公开(公告)号：US20110073892A1

公开(公告)日：2011-03-31

申请号：US12836199

申请日：2010-07-14

申请人： Takashi KYONO

发明人： Takashi KYONO

IPC分类号： H01L33/20

CPC分类号： H01L33/08 ,  H01L33/32

摘要： A light emitting device having a relatively simple configuration is provided that emits stable light having a plurality of wavelengths. The light emitting device 1 comprises, in sequence, a composite substrate 3 and a gallium nitride-based semiconductor layer 5 including a light emitting layer 9. The composite substrate 3 includes a base 19 and a gallium nitride layer, the gallium nitride-based semiconductor layer 5 being disposed on a principal surface of the gallium nitride layer, the angle θ defined by the c-axis of the gallium nitride layer and a normal line N1 to the principal surface S1 of the gallium nitride layer ranging from 50 to 130 degrees, the light emitting layer 9 emitting light with an absolute value of the degree of polarization of 0.2 or more, the base 19 containing a fluorescent material that emits a fluorescent light component induced by irradiation of a light component emitted from the light emitting layer 9. Accordingly, the light emitting device 1 can emit white light produced by superposition of blue light directly emitted from the light emitting layer 9 and yellow light induced by blue light incident on the base 19 from the light emitting layer 9.

摘要翻译： 提供具有相对简单配置的发光器件，其发射具有多个波长的稳定光。 发光器件1依次包括复合衬底3和包括发光层9的氮化镓基半导体层5.复合衬底3包括基底19和氮化镓层，氮化镓基半导体 层5设置在氮化镓层的主表面上，角度和角度; 由氮化镓层的c轴和氮化镓层的主面S1的法线N1限定在50〜130度的范围内的发光层9，发光层9的偏振度绝对值为绝对值 基底19含有发出由发光层9发出的光分量的照射而产生的荧光成分的荧光材料。因此，发光元件1能够直接发出由蓝光叠加而产生的白光 从发光层9发射的黄光和从发光层9入射到基底19上的蓝光引起的黄光。