公开(公告)号：US08269220B2

公开(公告)日：2012-09-18

申请号：US12554066

申请日：2009-09-04

申请人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

发明人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

IPC分类号： H01L29/04

CPC分类号： H01L29/66742 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869

摘要： Provided is a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. Here, the lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. Thus, the use of the multi-layered transparent conductive layer can ensure transparency and conductivity, overcome a problem of contact resistance between the source and drain electrodes and a semiconductor, and improve processibility by patterning the multi-layered transparent conductive layer all at once, while deposition is performed layer by layer.

摘要翻译： 提供了一种透明晶体管，其包括形成在基板上的基板，源电极和漏电极，每个具有下透明层，金属层和上透明层的多层结构，在源极和漏极之间形成的沟道， 以及与沟道对准的栅电极。 这里，下透明层或上透明层由与通道相同的透明半导体层形成。 因此，使用多层透明导电层可以确保透明性和导电性，克服了源极和漏极之间的接触电阻和半导体的问题，并且通过一次构图多层透明导电层来提高加工性， 同时逐层进行沉积。

公开(公告)号：US20110305062A1

公开(公告)日：2011-12-15

申请号：US12887316

申请日：2010-09-21

申请人： Chun Won BYUN ,  Byeong Hoon Kim ,  Sung Min Yoon ,  Kyoung Ik Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Min Ki Ryu ,  Shin Hyuk Yang ,  Oh Sang Kwon ,  Eun Suk Park

发明人： Chun Won BYUN ,  Byeong Hoon Kim ,  Sung Min Yoon ,  Kyoung Ik Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Min Ki Ryu ,  Shin Hyuk Yang ,  Oh Sang Kwon ,  Eun Suk Park

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： Provided are a memory cell and a memory device using the same, particularly, a nonvolatile non-destructive readable random access memory cell including a ferroelectric transistor as a storage unit and a memory device using the same. The memory cell includes a ferroelectric transistor having a drain to which a reference voltage is applied, a first switch configured to allow a source of the ferroelectric transistor to be connected to a first line in response to a scan signal, and a second switch configured to allow a gate of the ferroelectric transistor to be connected to a second line in response to the scan signal. The memory device enables random access and performs non-destructive read-out (NDRO) operations.

摘要翻译： 提供了一种存储器单元和使用该存储单元的存储器件，特别地，包括作为存储单元的铁电晶体管的非易失性非破坏性可读随机存取存储单元和使用该存储单元的存储器件。 存储单元包括具有施加了参考电压的漏极的铁电晶体管，被配置为允许铁电晶体管的源被响应于扫描信号连接到第一线的第一开关，以及被配置为 允许铁电晶体管的栅极响应于扫描信号连接到第二线。 存储器件允许随机访问并执行非破坏性读出（NDRO）操作。

公开(公告)号：US20100235560A1

公开(公告)日：2010-09-16

申请号：US12299135

申请日：2007-05-09

申请人： Soo Young Oh ,  Hye Yong Chu ,  Kyoung Ik Cho

发明人： Soo Young Oh ,  Hye Yong Chu ,  Kyoung Ik Cho

IPC分类号： G06F13/10

CPC分类号： H04M1/0266 ,  G06F1/1641 ,  G06F1/1643 ,  G06F1/1654 ,  H04M1/0214 ,  H04M1/72527 ,  H04M2250/12 ,  H04M2250/16

摘要： Provided is an input/output (I/O) expansion device for a portable electronic apparatus having a port to which an external expansion device can be connected. The I/O expansion device includes: a display body having at least one display portion; and at least one I/O connector formed at a portion of the display body to be electrically and physically attached to and separated from the port of the portable electronic apparatus. Therefore, it is possible to provide a multi-function I/O expansion device that can be electrically and physically attached and separated.

摘要翻译： 提供一种用于便携式电子设备的输入/输出（I / O）扩展装置，其具有能够连接外部扩展装置的端口。 I / O扩展装置包括：具有至少一个显示部分的显示体; 以及至少一个I / O连接器，其形成在所述显示器主体的一部分处，以电和物理地附接到所述便携式电子设备的端口并与所述便携式电子设备的端口分离。 因此，可以提供可以电气和物理地连接和分离的多功能I / O扩展装置。

公开(公告)号：US07554416B2

公开(公告)日：2009-06-30

申请号：US11542288

申请日：2006-10-02

申请人： Ja Yol Lee ,  Kwi Dong Kim ,  Chong Ki Kwon ,  Jong Dae Kim ,  Sang Heung Lee ,  Kyoung Ik Cho

发明人： Ja Yol Lee ,  Kwi Dong Kim ,  Chong Ki Kwon ,  Jong Dae Kim ,  Sang Heung Lee ,  Kyoung Ik Cho

IPC分类号： H03B7/06 ,  H03C3/22 ,  H03L1/00

CPC分类号： H03B5/1228 ,  H03B5/1215 ,  H03B5/1243 ,  H03B5/1265 ,  H03B5/1271 ,  H03B2201/0208 ,  H03B2201/0266 ,  H03J2200/10

摘要： Provided is an LC resonance voltage-controlled oscillator (VCO) used for a multi-band multi-mode wireless transceiver. In order to generate a multi-band frequency, a capacitor bank and a switchable inductor are included in the LC resonance voltage-controlled oscillator. The LC resonance voltage-controlled oscillator employs an adjustable emitter-degeneration negative resistance cell in place of tail current sources in order to compensate for non-uniform oscillation amplitude caused by the capacitor bank and prevent the degradation of a phase noise due to the tail current sources. The LC resonance voltage-controlled oscillator includes an inductor providing an inductance element partially determining the frequency of an oscillation wave; a discrete capacitor bank providing a capacitance element partially determining the frequency of the oscillation wave and being discretely determined by a control bit signal; and a discrete negative resistance cell providing a negative resistance element that is discretely determined by the control bit signal, to keep the amplitude of the oscillation wave constant.

摘要翻译： 提供了一种用于多频带多模无线收发器的LC谐振压控振荡器（VCO）。 为了产生多频带频率，LC谐振压控振荡器中包括电容器组和可切换电感器。 LC谐振压控振荡器代替尾电流源采用可调发射极 - 退化负电阻电池，以补偿由电容器组引起的不均匀振荡幅度，并防止由于尾电流导致的相位噪声的降低 来源。 LC谐振电压控制振荡器包括：电感器，其提供部分地确定振荡波频率的电感元件; 分立电容器组，提供部分地确定振荡波的频率并由控制位信号离散地确定的电容元件; 以及提供由控制位信号离散地确定的负电阻元件的离散负电阻单元，以保持振荡波的幅度恒定。

公开(公告)号：US07534680B2

公开(公告)日：2009-05-19

申请号：US11797071

申请日：2007-04-30

申请人： Jin Yeong Kang ,  Seung Yun Lee ,  Kyoung Ik Cho

发明人： Jin Yeong Kang ,  Seung Yun Lee ,  Kyoung Ik Cho

IPC分类号： H01L21/8238

CPC分类号： H01L21/84 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/1203 ,  H01L29/7371 ,  H01L29/78

摘要： Provided are bipolar transistor, BiCMOS device and method of fabricating thereof, in which an existing sub-collector disposed beneath a collector of a SiGe HBT is removed and a collector plug disposed at a lateral side of the collector is approached to a base when fabricating a Si-based very high-speed device, whereby it is possible to fabricate the SiGe HBT and an SOI CMOS on a single substrate, reduce the size of the device and the number of masks to be used, and implement the device of high density, low power consumption, and wideband performance.

摘要翻译： 提供了双极晶体管，BiCMOS器件及其制造方法，其中去除了设置在SiGe HBT的集电极下方的现有子集电极，并且设置在集电极的横向侧的集电极端子在制造时 基于Si的非常高速的器件，由此可以在单个衬底上制造SiGe HBT和SOI CMOS，减少器件的尺寸和使用的掩模的数量，并实现高密度的器件， 低功耗，宽带性能。

公开(公告)号：US07369017B2

公开(公告)日：2008-05-06

申请号：US11136471

申请日：2005-05-25

申请人： Dong Suk Jun ,  Hong Yeol Lee ,  Dong Young Kim ,  Kyoung Ik Cho ,  Sang Seok Lee

发明人： Dong Suk Jun ,  Hong Yeol Lee ,  Dong Young Kim ,  Kyoung Ik Cho ,  Sang Seok Lee

IPC分类号： H01P1/20 ,  H01P3/08

CPC分类号： H01P1/203

摘要： A narrowband microstrip type bandpass filter adapted for a home network, telematics, an intelligent traffic system, and a satellite Internet, includes: an input terminal for receiving a predetermined signal; an output terminal for outputting a selection signal in a characteristic band; a first resonator electrically coupled with at least a portion of the input terminal; a second resonator electrically coupled with at least a portion of the first resonator; and a third resonator electrically coupled with at least a portion of the output terminal and the second resonator. A magnetic coupling is provided using a cross coupling gap or a cross coupling line between non-adjacent resonators, so that a pattern can be simplified by optimizing the design and the manufacturing process to provide low-cost millimeter-wave parts. The manufacturing cost can be reduced by miniaturizing the parts, and the mass production can be readily realized.

摘要翻译： 适用于家庭网络，远程信息处理，智能交通系统和卫星互联网的窄带微带型带通滤波器包括：用于接收预定信号的输入端; 输出端子，用于输出特征频带中的选择信号; 与所述输入端子的至少一部分电耦合的第一谐振器; 与所述第一谐振器的至少一部分电耦合的第二谐振器; 以及与所述输出端子和所述第二谐振器的至少一部分电耦合的第三谐振器。 使用交叉耦合间隙或非相邻谐振器之间的交叉耦合线提供磁耦合，使得可以通过优化设计和制造工艺来简化图案以提供低成本的毫米波部分。 可以通过使部件小型化来降低制造成本，并且可以容易地实现批量生产。

公开(公告)号：US06563784B2

公开(公告)日：2003-05-13

申请号：US09769069

申请日：2001-01-24

申请人： Gee Pyeong Han ,  Kyoung Ik Cho ,  Mun Cheol Paek ,  Yeung Joon Sohn

发明人： Gee Pyeong Han ,  Kyoung Ik Cho ,  Mun Cheol Paek ,  Yeung Joon Sohn

IPC分类号： G11B700

CPC分类号： B82Y10/00 ,  G11B7/122 ,  G11B7/1387 ,  G11B7/14 ,  G11B15/62 ,  G11B15/64

摘要： The present invention relates to an optical data recording device using SIL (Solid Immersion Lens) in order to store information with high capacity, and more particularly to the multiple optical-recording apparatus capable of doing multiple information storage and play by forming multiple focus within the SIL. The present invention utilizes the optical technology by multiple source in order to overcome the limit of improving the recording speed and transfer rate due to the mechanical transfer and access, the flying head technology, which was proposed to increase the transfer rate and recording access speed in the near-field recording technology. The present invention can increase the recording speed and transfer rate using optical technology transcending the limit of mechanical transfer and access according to the number of the optical sources and focuses by recording and playing several pits simultaneously after forming multiple optical focus by multiple sources on the recording medium.