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公开(公告)号:US20120105158A1
公开(公告)日:2012-05-03
申请号:US13185913
申请日:2011-07-19
申请人: Sang-Heung LEE , Hae Cheon Kim , Eun Soo Nam
发明人: Sang-Heung LEE , Hae Cheon Kim , Eun Soo Nam
IPC分类号: H03F3/04
CPC分类号: H03F3/08 , H03F1/34 , H03F3/3432 , H03F2200/121 , H03F2200/141 , H03F2200/18
摘要: Provided is a feedback amplifier including: an amplification circuit unit to generate an output voltage by amplifying an input voltage inputted through an input terminal; an output circuit unit to output the generated output voltage through an output terminal; a feedback circuit unit to control the gain of the amplification circuit unit by determining a total feedback resistance value using an external control signal and controlling an input current while the total feedback resistance value is determined; and a bias circuit unit to apply a bias voltage to the feedback circuit unit.
摘要翻译: 提供一种反馈放大器,包括:放大电路单元,通过放大通过输入端子输入的输入电压来产生输出电压; 输出电路单元,用于通过输出端子输出产生的输出电压; 反馈电路单元,其通过使用外部控制信号确定总反馈电阻值来控制放大电路单元的增益,并且在确定总反馈电阻值的同时控制输入电流; 以及偏置电路单元,用于向反馈电路单元施加偏置电压。
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公开(公告)号:US07902930B2
公开(公告)日:2011-03-08
申请号:US11927957
申请日:2007-10-30
申请人: Ja Yol Lee , Sang Heung Lee , Hyun Kyu Yu
发明人: Ja Yol Lee , Sang Heung Lee , Hyun Kyu Yu
IPC分类号: H03K3/03
CPC分类号: H03B5/1218 , H03B5/1231 , H03B2200/0074 , H03B2200/0078
摘要: Provided is a colpitts quadrature voltage controlled oscillator capable of obtaining quadrature orthogonal signals using a quadrature combination between a base and a collector of each transistor, without using an additional circuit such as a coupled transistor, a coupled transformer, a multiphase RC filter, etc. Accordingly, since nonlinearity, increased phase noise, a decrease in the Q-factor of an LC resonator, and increased power consumption can be avoided, a colpitts quadrature voltage controlled oscillator that has low phase noise, low electric power consumption, and a compact size can be implemented.
摘要翻译: 提供了一种能够在不使用诸如耦合晶体管,耦合变压器,多相RC滤波器等附加电路的情况下使用每个晶体管的基极和集电极之间的正交组合获得正交正交信号的绞合正交压控振荡器。 因此,由于可以避免非线性,增加的相位噪声,LC谐振器的Q因子的降低和功率消耗的增加,所以抑制相位噪声低,功耗低,尺寸紧凑的正交压控振荡器 可以实现。
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公开(公告)号:US20110037078A1
公开(公告)日:2011-02-17
申请号:US12847174
申请日:2010-07-30
申请人: Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
发明人: Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
IPC分类号: H01L31/12
CPC分类号: H01L25/167 , G02B6/124 , H01L2224/48091 , H01L2224/48137 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要: Provided is an optical interconnection device. The optical interconnection device include: a first semiconductor chip disposed on a germanium-on-insulator (GOI) substrate; a light emitter on the GOI substrate, the light emitter receiving an electrical signal from the first semiconductor chip and outputting a light signal; a light detector on the GOI substrate, the light detector sensing the light signal and converting the sensed light signal into an electrical signal; and a second semiconductor chip on the GOI substrate, the second semiconductor chip receiving the electrical signal from the light detector.
摘要翻译: 提供了一种光互连装置。 光学互连装置包括:布置在绝缘体上(锗)绝缘体(GOI)基板上的第一半导体芯片; 在GOI基板上的光发射器,光发射器接收来自第一半导体芯片的电信号并输出光信号; 在GOI基板上的光检测器,光检测器感测光信号并将感测到的光信号转换成电信号; 以及在GOI基板上的第二半导体芯片,第二半导体芯片从光检测器接收电信号。
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公开(公告)号:US07741665B2
公开(公告)日:2010-06-22
申请号:US11872922
申请日:2007-10-16
申请人: Jin Yeong Kang , Jin Gun Koo , Sang Heung Lee
发明人: Jin Yeong Kang , Jin Gun Koo , Sang Heung Lee
IPC分类号: H01L31/062 , H01L31/113
CPC分类号: H01L27/14689 , H01L27/14609
摘要: Provided are a high-quality CMOS image sensor and a photo diode, which can be fabricated in sub-90 nm regime using nanoscale CMOS technology. The photo diode includes: a p-type well; an internal n-type region formed under a surface of the p-type well; and a surface p-type region including a highly doped p-type SiGeC epitaxial layer or a polysilicon layer deposited on a top surface of the p-type well over the internal n-type region. The image sensor includes: a photo diode including an internal n-type region and a surface p-type region; a transfer transistor for transmitting photo-charges generated in the photo diode to a floating diffusion node; and a driving transistor for amplifying a variation in an electric potential of the floating diffusion node due to the photo-charges. The image sensor further includes a floating metal layer for functioning as the floating diffusion node and applying an electric potential from a drain of the transfer transistor to a gate of the driving transistor.
摘要翻译: 提供了一种高质量CMOS图像传感器和光电二极管,其可以使用纳米级CMOS技术在亚90nm范围内制造。 光电二极管包括:p型阱; 形成在p型阱的表面下的内部n型区域; 以及表面p型区域,其包括在内部n型区域上沉积在p型阱的顶表面上的高掺杂p型SiGeC外延层或多晶硅层。 图像传感器包括:包含内部n型区域和表面p型区域的光电二极管; 用于将在光电二极管中产生的光电荷传输到浮动扩散节点的传输晶体管; 以及用于放大由于光电荷引起的浮动扩散节点的电位变化的驱动晶体管。 图像传感器还包括浮动金属层,用作浮动扩散节点并将电势从传输晶体管的漏极施加到驱动晶体管的栅极。
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公开(公告)号:US20080129392A1
公开(公告)日:2008-06-05
申请号:US11927957
申请日:2007-10-30
申请人: Ja Yol Lee , Sang Heung Lee , Hyun Kyu Yu
发明人: Ja Yol Lee , Sang Heung Lee , Hyun Kyu Yu
CPC分类号: H03B5/1218 , H03B5/1231 , H03B2200/0074 , H03B2200/0078
摘要: Provided is a colpitts quadrature voltage controlled oscillator capable of obtaining quadrature orthogonal signals using a quadrature combination between a base and a collector of each transistor, without using an additional circuit such as a coupled transistor, a coupled transformer, a multiphase RC filter, etc. Accordingly, since nonlinearity, increased phase noise, a decrease in the Q-factor of an LC resonator, and increased power consumption can be avoided, a colpitts quadrature voltage controlled oscillator that has low phase noise, low electric power consumption, and a compact size can be implemented.
摘要翻译: 提供了一种能够在不使用诸如耦合晶体管,耦合变压器,多相RC滤波器等附加电路的情况下使用每个晶体管的基极和集电极之间的正交组合获得正交正交信号的绞合正交压控振荡器。 因此,由于可以避免非线性,增加的相位噪声,LC谐振器的Q因子的降低和功率消耗的增加,所以抑制相位噪声低,功耗低,尺寸紧凑的正交压控振荡器 可以实现。
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公开(公告)号:US08853821B2
公开(公告)日:2014-10-07
申请号:US13618873
申请日:2012-09-14
申请人: Seong-il Kim , Sang-Heung Lee , Jong-Won Lim , Hyung Sup Yoon , Jongmin Lee , Byoung-Gue Min , Jae Kyoung Mun , Eun Soo Nam
发明人: Seong-il Kim , Sang-Heung Lee , Jong-Won Lim , Hyung Sup Yoon , Jongmin Lee , Byoung-Gue Min , Jae Kyoung Mun , Eun Soo Nam
IPC分类号: H01L21/02
CPC分类号: H01L28/91 , H01L23/481 , H01L28/92 , H01L2924/0002 , H01L2924/00
摘要: Provided are vertical capacitors and methods of forming the same. The formation of the vertical capacitor may include forming input and output electrodes on a top surface of a substrate, etching a bottom surface of the substrate to form via electrodes, and then, forming a dielectric layer between the via electrodes. As a result, a vertical capacitor with high capacitance can be provided in a small region of the substrate.
摘要翻译: 提供垂直电容器及其形成方法。 垂直电容器的形成可以包括在衬底的顶表面上形成输入和输出电极,蚀刻衬底的底表面以形成通孔电极,然后在通孔电极之间形成电介质层。 结果,可以在基板的小区域中提供具有高电容的垂直电容器。
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公开(公告)号:US08421538B2
公开(公告)日:2013-04-16
申请号:US13185913
申请日:2011-07-19
申请人: Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
发明人: Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
IPC分类号: H03F3/04
CPC分类号: H03F3/08 , H03F1/34 , H03F3/3432 , H03F2200/121 , H03F2200/141 , H03F2200/18
摘要: Provided is a feedback amplifier including: an amplification circuit unit to generate an output voltage by amplifying an input voltage inputted through an input terminal; an output circuit unit to output the generated output voltage through an output terminal; a feedback circuit unit to control the gain of the amplification circuit unit by determining a total feedback resistance value using an external control signal and controlling an input current while the total feedback resistance value is determined; and a bias circuit unit to apply a bias voltage to the feedback circuit unit.
摘要翻译: 提供一种反馈放大器,包括:放大电路单元,通过放大通过输入端子输入的输入电压来产生输出电压; 输出电路单元,用于通过输出端子输出产生的输出电压; 反馈电路单元,其通过使用外部控制信号确定总反馈电阻值来控制放大电路单元的增益,并且在确定总反馈电阻值的同时控制输入电流; 以及偏置电路单元,用于向反馈电路单元施加偏置电压。
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公开(公告)号:US08338241B2
公开(公告)日:2012-12-25
申请号:US13283626
申请日:2011-10-28
申请人: Hyung Sup Yoon , Byoung-Gue Min , Hokyun Ahn , Sang-Heung Lee , Hae Cheon Kim
发明人: Hyung Sup Yoon , Byoung-Gue Min , Hokyun Ahn , Sang-Heung Lee , Hae Cheon Kim
IPC分类号: H01L21/338
CPC分类号: H01L29/7783 , H01L21/8252 , H01L27/0605 , H01L29/42316 , H01L29/66462
摘要: Provided are a method of manufacturing a normally-off mode high frequency device structure and a method of simultaneously manufacturing a normally-on mode high frequency device structure and a normally-off mode high frequency device structure on a single substrate.
摘要翻译: 提供一种制造常闭型高频器件结构的方法以及在单个衬底上同时制造常开模式高频器件结构和常关型高频器件结构的方法。
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公开(公告)号:US08304859B2
公开(公告)日:2012-11-06
申请号:US12847174
申请日:2010-07-30
申请人: Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
发明人: Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
CPC分类号: H01L25/167 , G02B6/124 , H01L2224/48091 , H01L2224/48137 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要: Provided is an optical interconnection device. The optical interconnection device include: a first semiconductor chip disposed on a germanium-on-insulator (GOI) substrate; a light emitter on the GOI substrate, the light emitter receiving an electrical signal from the first semiconductor chip and outputting a light signal; a light detector on the GOI substrate, the light detector sensing the light signal and converting the sensed light signal into an electrical signal; and a second semiconductor chip on the GOI substrate, the second semiconductor chip receiving the electrical signal from the light detector.
摘要翻译: 提供了一种光互连装置。 光学互连装置包括:布置在绝缘体上(锗)绝缘体(GOI)基板上的第一半导体芯片; 在GOI基板上的光发射器,光发射器接收来自第一半导体芯片的电信号并输出光信号; 在GOI基板上的光检测器,光检测器感测光信号并将感测到的光信号转换成电信号; 以及在GOI基板上的第二半导体芯片,第二半导体芯片从光检测器接收电信号。
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公开(公告)号:US08058658B2
公开(公告)日:2011-11-15
申请号:US12421130
申请日:2009-04-09
申请人: Sang-Heung Lee , Hae Cheon Kim , Dong Min Kang , Dong-Young Kim , Jae Kyoung Mun , Hokyun Ahn , Jong-Won Lim , Woo Jin Chang , Hong Gu Ji , Eun Soo Nam
发明人: Sang-Heung Lee , Hae Cheon Kim , Dong Min Kang , Dong-Young Kim , Jae Kyoung Mun , Hokyun Ahn , Jong-Won Lim , Woo Jin Chang , Hong Gu Ji , Eun Soo Nam
IPC分类号: H01L27/15
CPC分类号: H01L25/167 , H01L2224/0603 , H01L2224/45014 , H01L2224/48137 , H01L2224/4903 , H01L2224/73265 , H01L2924/1305 , H01L2924/30107 , H01L2924/00
摘要: Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors.
摘要翻译: 提供了一种高速光互连装置。 高速光互连装置包括设置在绝缘体上硅(SOI))衬底上的第一半导体芯片,发光体,光检测器和第二半导体芯片。 光发射器接收来自第一半导体芯片的电信号以输出光信号。 光检测器检测光信号,将光信号转换为电信号。 第二半导体芯片接收由光学检测器转换的电信号。
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