公开(公告)号：US20090008676A1

公开(公告)日：2009-01-08

申请号：US12165913

申请日：2008-07-01

申请人： Ken Sato

发明人： Ken Sato

IPC分类号： H01L21/335 ,  H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7789

摘要： A normally-off HEMT is made by first providing a substrate having its surface partly covered with an antigrowth mask. Gallium nitride is grown by epitaxy on the masked surface of the substrate to provide an electron transit layer comprised of two flat-surfaced sections and a V-notch-surfaced section therebetween. The flat-surfaced sections are formed on unmasked parts of the substrate surface whereas the V-notch-surfaced section, defining a V-sectioned notch, is created by lateral overgrowth onto the antigrowth mask. Aluminum gallium nitride is then deposited on the electron transit layer to provide an electron supply layer which is likewise comprised of two flat-surfaced sections and a V-notch-surfaced section therebetween. The flat-surfaced sections of the electron supply layer are sufficiently thick to normally generate two-dimensional electron gas layers due to heterojunctions thereof with the first and the second flat-surfaced section of the electron transit layer. The V-notch-surfaced section of the electron supply layer is not so thick, normally creating an interruption in the two-dimensional electron gas layer.

摘要翻译： 常规HEMT通过首先提供其表面部分地被抗生长掩模覆盖的基底来制造。 通过在衬底的掩模表面上外延生长氮化镓，以提供由两个平坦表面部分组成的电子传输层和其间的V形缺口表面部分。 平面部分形成在衬底表面的未屏蔽部分上，而形成V形切口的V形缺口表面部分由横向过度生长产生到抗生长掩模上。 然后将氮化镓铝沉积在电子转移层上以提供同样由两个平坦表面部分组成的电子供应层和它们之间的V形缺口表面部分。 电子供给层的平坦表面部分足够厚，由于与电子转移层的第一和第二平坦表面的异质结，通常产生二维电子气层。 电子供应层的V形缺口表面部分不是很厚，通常在二维电子气层中产生中断。

公开(公告)号：US5630708A

公开(公告)日：1997-05-20

申请号：US364857

申请日：1994-12-27

申请人： Takeo Kushida ,  Fujio Aoki ,  Takayuki Ikeda ,  Koichiro Futamase ,  Tomoharu Sato ,  Hideya Kikuchi ,  Ken Sato ,  Nobuo Aoki ,  Katsuhiko Tsukazaki

发明人： Takeo Kushida ,  Fujio Aoki ,  Takayuki Ikeda ,  Koichiro Futamase ,  Tomoharu Sato ,  Hideya Kikuchi ,  Ken Sato ,  Nobuo Aoki ,  Katsuhiko Tsukazaki

IPC分类号： F04B1/053 ,  F04B53/10 ,  F04B53/22

CPC分类号： F04B53/1047 ,  F04B1/053 ,  F04B53/109 ,  F04B53/22

摘要： A radial piston pump for low-viscosity fuel according to a first aspect of the invention comprises a pump housing, which is constituted of as few as two structural bodies (from among a drive-side housing member 2A, a fixed cylinder 81 and a cover 4), and a leaf valve member 82 which is formed with intake valves 87 for opening and closing intake side passages 27 and discharge valves 88 for opening and closing discharge side passages 28 and is sandwiched between two structural bodies (fixed cylinder 81 and cover 4). The first aspect of the invention reduces the number of components constituting the pump housing, enables highly precise overall axial alignment, prevents wobbling of a pump shaft 9 of the pump, increases performance and reliability and reduces cost. A radial piston pump for low-viscosity fuel according to a second aspect of the invention comprises a leaf valve member 205 formed in one and the same plane thereof with overflow ports communicating with an overflow passage 59 in the pump housing, intake valves 87 communicating with intake side passages 27 and discharge valves 88 communicating with discharge side passages 28. The third aspect of the invention provides a method for assembling the radial piston pump for low-viscosity fuel according to the second aspect of the invention.

摘要翻译： 根据本发明的第一方面的用于低粘度燃料的径向柱塞泵包括泵壳体，其由少至两个结构体（从驱动侧壳体构件2A，固定气缸81和盖子 形成有用于打开和关闭进气侧通道27的进气门87和用于打开和关闭排出侧通道28的排出阀88并且被夹在两个结构体（固定缸81和盖4）之间的叶片阀构件82 ）。 本发明的第一方面减少了构成泵壳体的部件的数量，使得能够进行高精度的总体轴向对准，防止泵的泵轴9摆动，提高了性能和可靠性并降低了成本。 根据本发明第二方面的用于低粘度燃料的径向柱塞泵包括在其一个同一平面中形成有与泵壳体中的溢流通道59连通的溢流口的叶片阀件205，进气门87与 进气侧通道27和与排出侧通道28连通的排出阀88.本发明的第三方面提供一种组装根据本发明第二方面的用于低粘度燃料的径向活塞泵的方法。

公开(公告)号：US20140119028A1

公开(公告)日：2014-05-01

申请号：US14116672

申请日：2012-06-08

申请人： Eiichi Sato ,  Ken Sato ,  Hiroyasu Sato

发明人： Eiichi Sato ,  Ken Sato ,  Hiroyasu Sato

IPC分类号： F21V7/00

CPC分类号： F21V7/0025 ,  F21S8/033 ,  F21S8/04 ,  F21V7/0041 ,  F21V11/14 ,  F21V13/10 ,  F21V17/164 ,  F21Y2103/10 ,  F21Y2103/33 ,  F21Y2115/10

摘要： An illumination device including a light source device includes a light source being constituted by LED(s); a light source side reflective plate to which the light source is fixed; an emission side reflective plate facing the light source side reflective plate; and a fixing means for fixing the both reflective plates, wherein the emission side reflective plate is formed so that a portion thereof facing the light source has the highest optical reflectance and the lowest optical transmittance while the optical reflectance decreases and the optical transmittance increases farther away from the light source, and the distance between the both reflective plates is greatest at a portion where the light source is disposed, while the distance decreases at portions farther away from the portion where the light source is disposed. Thus the device can supply light in a substantially uniform manner from a light irradiation surface.

摘要翻译： 一种包括光源装置的照明装置，包括由LED构成的光源; 固定光源的光源侧反射板; 面向光源侧反射板的发射侧反射板; 以及用于固定两个反射板的固定装置，其中发射侧反射板形成为使得其面向光源的部分具有最高的光学反射率和最低的光透射率，同时光学反射率降低，并且光透射率越来越远 并且两个反射板之间的距离在设置光源的部分处最大，而距离设置有光源的部分更远的部分的距离减小。 因此，该装置可以从光照射表面以基本均匀的方式提供光。

公开(公告)号：US08563984B2

公开(公告)日：2013-10-22

申请号：US12833483

申请日：2010-07-09

申请人： Ken Sato

发明人： Ken Sato

IPC分类号： H01L29/20

CPC分类号： H01L29/7787 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/4175

摘要： Device having reduced buffer leak on GaN substrate. In HEMT device, n-GaN (n-type GaN wafer) is used as substrate 11. Non-doped AlpGa1-pN layer with non-uniform composition p is formed on substrate 11 as buffer layer 12. On buffer layer 12, channel layer 13 of semi-insulating GaN and electron supply layer 14 of n-AlGaN are sequentially formed. In buffer layer 12, substrate connection region 121 where p=0 (GaN) is formed on lower end side, and active layer connection region 122 where value of p is also 0 (GaN) is formed on upper end side (channel layer 13 side). High Al composition region 123 where value of p is set to 1 (p=1) (AlN) is formed between substrate connection region 121 and active layer connection region 122. Resistivity of the high Al composition region 123 is highest in the buffer layer.

摘要翻译： 在GaN衬底上具有减少的缓冲器泄漏的器件。 在HEMT器件中，使用n-GaN（n型GaN晶片）作为衬底11.在衬底11上形成具有不均匀组成p的非掺杂AlpGa1-pN层作为缓冲层12.在缓冲层12上，沟道层 依次形成n-AlGaN的半绝缘GaN和电子供给层14。 在缓冲层12中，在下端侧形成p = 0（GaN）的基板连接区域121，p的值p也为0（GaN）的有源层连接区域122形成在沟道层13侧 ）。 在衬底连接区域121和有源层连接区域122之间形成p值为1（p = 1）（AlN）的高Al组成区域123.高Al组成区域123的电阻率在缓冲层中最高。

公开(公告)号：US08546848B2

公开(公告)日：2013-10-01

申请号：US12579009

申请日：2009-10-14

申请人： Ken Sato

发明人： Ken Sato

IPC分类号： H01L29/66

CPC分类号： H01L29/432 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/42364 ,  H01L29/66462 ,  H01L29/7787

摘要： A nitride semiconductor device includes: a main semiconductor region comprising a first nitride semiconductor layer having a first band gap, and a second nitride semiconductor layer having a second band gap larger than the first band gap, a heterojunction being formed between the first nitride semiconductor layer and a the second nitride semiconductor layer such that two-dimensional electron gas layer can be caused inside the first nitride semiconductor layer based on the heterojunction; a source electrode formed on the main semiconductor region; a drain electrode formed on the main semiconductor region and separated from the source electrode; a third nitride semiconductor layer formed on the first nitride semiconductor layer and between the source electrode and the drain electrode; and a gate electrode formed on the third nitride semiconductor layer. The third nitride semiconductor layer has a third band gap smaller than the first band gap.

摘要翻译： 一种氮化物半导体器件包括：主半导体区域，包括具有第一带隙的第一氮化物半导体层和具有大于第一带隙的第二带隙的第二氮化物半导体层，异质结形成在第一氮化物半导体层 以及第二氮化物半导体层，使得可以基于异质结在第一氮化物半导体层的内部引起二维电子气体层; 形成在所述主半导体区域上的源电极; 漏极，形成在所述主半导体区上并与所述源电极分离; 第三氮化物半导体层，形成在所述第一氮化物半导体层上，并且在所述源电极和所述漏电极之间; 以及形成在所述第三氮化物半导体层上的栅电极。 第三氮化物半导体层具有比第一带隙小的第三带隙。

公开(公告)号：US08524550B2

公开(公告)日：2013-09-03

申请号：US13308360

申请日：2011-11-30

申请人： Ken Sato

发明人： Ken Sato

IPC分类号： H01L21/338

CPC分类号： C30B29/403 ,  C30B25/02 ,  H01L29/2003 ,  H01L29/66462

摘要： A method of manufacturing a semiconductor device, in which a second semiconductor layer of AlxGa1-x-yInyN (wherein x, y, and x+y satisfy x>0, y≧0, and x+y≦1, respectively) on a first semiconductor layer of GaN by hetero-epitaxial growth using a MOCVD method, the method including the steps of: (a) supplying N source gas and Ga source gas to form the first semiconductor layer; (b) supplying the N source gas without supplying the Ga source gas and Al source gas, after step (a); (c) supplying the N source gas and the Al source gas without supplying the Ga source gas, after step (b); and (d) supplying the N source gas, the Ga source gas and the Al source gas to form the second semiconductor layer, after step (c).

摘要翻译： 一种半导体器件的制造方法，其中Al x Ga 1-x-y In y N（其中x，y，x + y分别满足x> 0，y> = 0，x + y @ 1）的第二半导体层对 通过使用MOCVD方法通过异质外延生长的GaN的第一半导体层，所述方法包括以下步骤：（a）提供N源气体和Ga源气体以形成第一半导体层; （b）在步骤（a）之后，不提供Ga源气体和Al源气体供给N源气体; （c）在步骤（b）之后，不提供Ga源气体来供给N源气体和Al源气体; 和（d）在步骤（c）之后，供给N源气体，Ga源气体和Al源气体以形成第二半导体层。

公开(公告)号：US08496576B2

公开(公告)日：2013-07-30

申请号：US12748828

申请日：2010-03-29

申请人： Ken Sato ,  Fukashi Yoshizawa

发明人： Ken Sato ,  Fukashi Yoshizawa

IPC分类号： A61B1/04

CPC分类号： A61B1/041

摘要： A capsule endoscope system provided with a magnetic field generating apparatus including an input section for inputting identification information A and a magnetic field generating section that generates a magnetic field signal that controls a capsule endoscope, and the capsule endoscope including an in-vivo information acquiring section, a battery, a magnetic field receiving section, a storage section that stores identification information B, a control section and a comparing section that compares the identification information A with the identification information B and judges whether both pieces of information are the same or different, wherein when the judgment by the comparing section is a judgment that both pieces of information are the same, the control section supplies or shuts off power from the battery to the in-vivo information acquiring section.

摘要翻译： 一种胶囊型内窥镜系统，其具备包括输入识别信息A的输入部和产生控制胶囊型内窥镜的磁场信号的磁场产生部的磁场产生装置，所述胶囊型内窥镜具备：体内信息获取部 ，电池，磁场接收部，存储识别信息B的存储部，控制部和比较部，其将识别信息A与识别信息B进行比较，判断两条信息是否相同， 其中当所述比较部分的判断是两条信息相同的判断时，所述控制部分将所述电池的电力提供给所述体内信息获取部分。

公开(公告)号：US08410525B2

公开(公告)日：2013-04-02

申请号：US12619110

申请日：2009-11-16

申请人： Ken Sato

发明人： Ken Sato

IPC分类号： H01L29/66

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/7783 ,  H01L29/7787

摘要： A semiconductor device is formed on a semiconductor substrate, which is comprised of: a base substrate; and a multilayer being formed on the base substrate and having a surface serving for an interface with the semiconductor device, the multilayer including alternating layers of a first compound semiconductor and a second compound semiconductor materially distinguishable from the first compound semiconductor, one selected from the group consisting of the first compound semiconductor and the second compound semiconductor being doped with one selected from the group consisting of carbon and transition elements.

摘要翻译： 半导体器件形成在半导体衬底上，该半导体衬底包括：基底; 以及形成在所述基底基板上并且具有用于与所述半导体器件的界面的表面的多层，所述多层包括与所述第一化合物半导体物质上可区分的第一化合物半导体和第二化合物半导体的交替层，所述第二化合物半导体选自 由第一化合物半导体和第二化合物半导体掺杂有选自碳和过渡元素的一种。

公开(公告)号：US08193561B2

公开(公告)日：2012-06-05

申请号：US12908930

申请日：2010-10-21

申请人： Ken Sato

发明人： Ken Sato

IPC分类号： H01L29/66

CPC分类号： H01L29/7787 ,  H01L29/0891 ,  H01L29/2003

摘要： A semiconductor device reduces the on-resistance and, at the same time, raises the breakdown voltage. The drain electrode 20 of the semiconductor device runs through cap layer 13 and electron supply layer 12 and gets to a position lower than two-dimensional electron gas layer 14 in channel layer 11. Thus, the drain electrode 20 directly contacts the channel layer 11, the electron supply layer 12 and the cap layer 13. Angles (acute angles) θ, ø and ψ are formed by the drain electrode 20 and the channel layer 11, the electron supply layer 12 and the cap layer 13 as viewed in the direction in which a hetero interface is formed (the transverse direction in FIG. 1) and relationships of ø

摘要翻译： 半导体器件降低导通电阻，同时提高击穿电压。 半导体器件的漏电极20穿过覆盖层13和电子供给层12，并且到达沟道层11中的二维电子气体层14的位置。因此，漏电极20直接接触沟道层11， 电子供给层12和盖层13.从倾斜方向观察，漏电极20和沟道层11，电子供给层12和盖层13形成角度（锐角）＆lt; 其中形成了异质界面（图1中的横向）和ø<＆thetas的关系; 和ø＆nlE;ψ建立。 换句话说，ø在角度中最小，并且漏极20特别是在电子供给层12的位置处非常大的锥度。

公开(公告)号：US20120132962A1

公开(公告)日：2012-05-31

申请号：US13308360

申请日：2011-11-30

申请人： Ken Sato

发明人： Ken Sato

IPC分类号： H01L29/205 ,  C30B25/14 ,  C30B25/02

CPC分类号： C30B29/403 ,  C30B25/02 ,  H01L29/2003 ,  H01L29/66462

摘要： A method of manufacturing a semiconductor device, in which a second semiconductor layer of AlxGa1-x-yInyN (wherein x, y, and x+y satisfy x>0, y≧0, and x+y≦1, respectively) on a first semiconductor layer of GaN by hetero-epitaxial growth using a MOCVD method, the method including the steps of: (a) supplying N source gas and Ga source gas to form the first semiconductor layer; (b) supplying the N source gas without supplying the Ga source gas and Al source gas, after step (a); (c) supplying the N source gas and the Al source gas without supplying the Ga source gas, after step (b); and (d) supplying the N source gas, the Ga source gas and the Al source gas to form the second semiconductor layer, after step (c).

摘要翻译： 一种制造半导体器件的方法，其中Al x Ga 1-x-y In y N（其中x，y和x + y分别满足x> 0，y≥0和x + y＆nlE; 1）的第二半导体层 使用MOCVD方法通过异质外延生长的GaN的第一半导体层，所述方法包括以下步骤：（a）提供N源气体和Ga源气体以形成第一半导体层; （b）在步骤（a）之后，不提供Ga源气体和Al源气体供给N源气体; （c）在步骤（b）之后，不提供Ga源气体来供给N源气体和Al源气体; 和（d）在步骤（c）之后，供给N源气体，Ga源气体和Al源气体以形成第二半导体层。