摘要:
Apparatus, methods, and systems are disclosed, including those that are to prevent a bias voltage from rising to a higher level than a storage node voltage as the bias voltage transitions to a ground level. For example a first voltage generator may be utilized to generate a bias voltage to bias a transistor in a memory cell in a memory array. A second voltage generator may be utilized to generate an plate voltage. The memory cell may include a transistor on a substrate and a capacitor. The capacitor connects from a drain of the transistor to the plate voltage. The storage node voltage is located at the drain of the transistor. A power controller may provide an off signal to the first and second voltage generators. The bias voltage may then transition to ground from a voltage less than zero volts. The rate of the bias voltage rise to ground is such that the bias voltage is maintained at less than or equal to the storage node voltage during the transition time period.
摘要:
Apparatus, systems, and methods are disclosed that operate within a memory to execute internal commands, to suspend the execution of commands during a transfer period, and to execute external commands following the transfer period. Additional apparatus, systems, and methods are disclosed.
摘要:
A memory device includes a command decoder and control interface logic. One or more external inputs, such as row and column address strobes, communicate with the command decoder through the control interface logic. A control signal is also in communication with the control interface logic. During operation of a drowsy mode in the memory device, a self-refresh signal causes the control signal to disable the external inputs. With the external inputs disabled, command hazards are reduced when exiting drowsy mode.
摘要:
Provided are phosphors that can provide emission devices that can further improve emission characteristics, principally, color rendering. Disclosed are phosphors made by substituting at least a portion of M2 in compounds represented by Formula (1) with M4 (M4 represents a trivalent cationic element), substituting a portion of O in said compound with M5 (M5 represents a trivalent anionic element) and substituting a portion of M1 and/or M2 in said compound with an activated element. In Formula (1): aM1O.3M2O.6M3O2 (In Formula (1), M1 represents one or more alkaline-earth elements selected from a group comprising Ba, Sr and Ca, M2 represents one or more divalent metal elements selected from a group comprising Mg and Zn, M3 represents a tetravalent metal element and a is a value in the range 3 to 9.)
摘要:
Apparatus, methods, and systems are disclosed, including those that are to prevent a bias voltage from rising to a higher level than a storage node voltage as the bias voltage transitions to a ground level. For example a first voltage generator may be utilized to generate a bias voltage to bias a transistor in a memory cell in a memory array. A second voltage generator may be utilized to generate an plate voltage. The memory cell may include a transistor on a substrate and a capacitor. The capacitor connects from a drain of the transistor to the plate voltage. The storage node voltage is located at the drain of the transistor. A power controller may provide an off signal to the first and second voltage generators. The bias voltage may then transition to ground from a voltage less than zero volts. The rate of the bias voltage rise to ground is such that the bias voltage is maintained at less than or equal to the storage node voltage during the transition time period.
摘要:
An operation input reception unit (201) receives an operation input for a virtual vehicle to be run on the running path. A running condition managing unit (203) manages the running condition of the virtual vehicle based on the received operation input. A load calculation unit (205) calculates a load imposed on a virtual operator in the virtual vehicle, based on the managed running condition. Meanwhile, a symbol drawing unit (401) draws a load symbol whose display position changes according to the calculated load. A tire image drawing unit (402) draws an image of a tire whose display manner changes according to the calculated load. A meter image creating unit (403) creates a meter image including the drawn load symbol and image of the tire. Then, a display control unit (207) displays the created meter image on a predetermined monitor.
摘要:
Apparatus, systems, and methods are disclosed that operate within a memory to execute internal commands, to suspend the execution of commands during a transfer period, and to execute external commands following the transfer period. Additional apparatus, systems, and methods are disclosed.
摘要:
An operation input reception unit (201) receives an operation input for a virtual vehicle to be run on the running path. A running condition managing unit (203) manages the running condition of the virtual vehicle based on the received operation input. A load calculation unit (205) calculates a load imposed on a virtual operator in the virtual vehicle, based on the managed running condition. Meanwhile, a symbol drawing unit (401) draws a load symbol whose display position changes according to the calculated load. A tire image drawing unit (402) draws an image of a tire whose display manner changes according to the calculated load. A meter image creating unit (403) creates a meter image including the drawn load symbol and image of the tire. Then, a display control unit (207) displays the created meter image on a predetermined monitor.
摘要:
A test method for a semiconductor device that is provided with an ECC circuit that uses product code that is composed of a first code and a second code for implementing error correction of a memory, the test method includes steps of: obtaining first pass/fail determination results and second pass/fail determination results that are realized by independent correction operations based on the first code and the second code, respectively; recording the results in a first fail memory and a second fail memory, respectively; executing a prescribed logical operation such as an AND operation relating to the contents of the first fail memory and the contents of the second fail memory; and based on the results of the logical operation, remedying both fail bits and potential fail bits.
摘要:
A test method for a semiconductor device that is provided with an ECC circuit that uses product code that is composed of a first code and a second code for implementing error correction of a memory, the test method includes steps of: obtaining first pass/fail determination results and second pass/fail determination results that are realized by independent correction operations based on the first code and the second code, respectively; recording the results in a first fail memory and a second fail memory, respectively; executing a prescribed logical operation such as an AND operation relating to the contents of the first fail memory and the contents of the second fail memory; and based on the results of the logical operation, remedying both fail bits and potential fail bits.