公开(公告)号：US07494750B2

公开(公告)日：2009-02-24

申请号：US11478887

申请日：2006-06-30

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/50 ,  G03F7/70425

摘要： The invention includes reticles and methods of forming reticles. In one aspect, a reticle can include a quartz-containing substrate, an attenuating layer, and an antireflective structure between the attenuating layer and the quartz-containing substrate. The invention can also include a reticle having a relatively transparent region between first and second surfaces, a relatively opaque region proximate the first surface, and a layer comprising one or both of metal fluoride and hafnium oxide proximate the first or second surface. The invention can also include methods of forming reticles in which an antireflective structure is formed over a surface of a quartz-containing substrate. The antireflective structure can comprise a Fabry-Perot pair, and in some aspects can comprise a layer containing one or both of metal fluoride and hafnium oxide.

摘要翻译： 本发明包括掩模版和形成掩模版的方法。 在一个方面，掩模版可以包括含有石英的衬底，衰减层和在所述衰减层和含石英衬底之间的抗反射结构。 本发明还可以包括在第一表面和第二表面之间具有相对透明区域的掩模版，靠近第一表面的相对不透明的区域，以及在第一表面或第二表面附近包含金属氟化物和氧化铪中的一种或两种的层。 本发明还可以包括在含石英衬底的表面上形成抗反射结构的形成掩模版的方法。 抗反射结构可以包含法布里 - 珀罗对，并且在一些方面可以包含含有金属氟化物和氧化铪中的一种或两种的层。

公开(公告)号：US07455937B2

公开(公告)日：2008-11-25

申请号：US11003274

申请日：2004-12-03

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/50 ,  G03F7/70425

摘要： The invention includes reticles and methods of forming reticles. In one aspect, a reticle can include a quartz-containing substrate, an attenuating layer, and an antireflective structure between the attenuating layer and the quartz-containing substrate. The invention can also include a reticle having a relatively transparent region between first and second surfaces, a relatively opaque region proximate the first surface, and a layer comprising one or both of metal fluoride and hafnium oxide proximate the first or second surface. The invention can also include methods of forming reticles in which an antireflective structure is formed over a surface of a quartz-containing substrate. The antireflective structure can comprise a Fabry-Perot pair, and in some aspects can comprise a layer containing one or both of metal fluoride and hafnium oxide.

摘要翻译： 本发明包括掩模版和形成掩模版的方法。 在一个方面，掩模版可以包括含有石英的衬底，衰减层和在所述衰减层和含石英衬底之间的抗反射结构。 本发明还可以包括在第一表面和第二表面之间具有相对透明区域的掩模版，靠近第一表面的相对不透明的区域，以及在第一表面或第二表面附近包含金属氟化物和氧化铪中的一种或两种的层。 本发明还可以包括在含石英衬底的表面上形成抗反射结构的形成掩模版的方法。 抗反射结构可以包含法布里 - 珀罗对，并且在一些方面可以包含含有金属氟化物和氧化铪中的一种或两种的层。

公开(公告)号：US06767690B2

公开(公告)日：2004-07-27

申请号：US10391310

申请日：2003-03-17

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F700

CPC分类号： G03F7/70466 ,  G03F7/0045 ,  Y10S430/143

摘要： The invention encompasses a method for forming a pattern across and expanse of photoresist. The expanse comprises a defined first region, second region and third region. The first region is exposed to a first radiation while leaving the third region not exposed; and subsequently the second region is exposed to a second radiation while leaving the third region not exposed to the second radiation. The second radiation is different from the first radiation. The exposure of the first and second regions in a solvent relative to the solubility of the third region of the expanse. After the first and second regions of the expanse are exposed to the first and second radiations, the expanse is exposed to a solvent to pattern the expanse. The invention can be utilized in forming radiation-patterning tools and stencils; and in patterning semiconductor substrates.

摘要翻译： 本发明包括一种用于在一片光致抗蚀剂上形成图案的方法。 该扩展包括限定的第一区域，第二区域和第三区域。 第一区域暴露于第一辐射同时使第三区域不暴露; 并且随后第二区域暴露于第二辐射，同时使第三区域不暴露于第二辐射。 第二次辐射与第一次辐射不同。 第一和第二区域暴露于第一和第二辐射改变第一和第二区域在溶剂中相对于the第三区域的溶解度的溶解度。 在广the的第一和第二区域暴露于第一次和第二次辐射之后，将该exp is暴露于溶剂以对exp to进行模拟。 本发明可用于形成辐射图案化工具和模板; 并且在图案化半导体衬底中。

公开(公告)号：US06599666B2

公开(公告)日：2003-07-29

申请号：US09809720

申请日：2001-03-15

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/29

摘要： The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely-spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.

公开(公告)号：US06555298B1

公开(公告)日：2003-04-29

申请号：US09643466

申请日：2000-08-22

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F726

CPC分类号： H01L21/67103 ,  F28D2021/0077 ,  G03F7/168 ,  G03F7/38 ,  G03F7/40 ,  H01L21/67109

摘要： A method and apparatus for baking a film onto a substrate. A film, such as a layer of photoresist, is disposed on a first surface of a substrate while a second surface is exposed to a liquid bath. The liquid bath is maintained at a pre-selected temperature. Exposure of the substrate to the liquid bath allows the film on the opposite surface to bake. The liquid bath is then re-circulated to maintain a constant and uniform temperature gradient across the substrate.

摘要翻译： 一种将薄膜烘烤在基材上的方法和装置。 将诸如光致抗蚀剂层的膜设置在基板的第一表面上，同时将第二表面暴露于液槽。 液浴保持在预先选定的温度。 将基板暴露于液槽允许相对表面上的膜被烘烤。 然后液体浴再次循环，以保持基板上恒定均匀的温度梯度。

公开(公告)号：US06548223B2

公开(公告)日：2003-04-15

申请号：US09797352

申请日：2001-02-28

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F700

CPC分类号： G03F7/70466 ,  G03F7/0045 ,  Y10S430/143

摘要： The invention encompasses a method for forming a pattern across an expanse of photoresist. The expanse comprises a defined first region, second region and third region. The first region is exposed to a first radiation while leaving the third region not exposed; and subsequently the second region is exposed to a second radiation while leaving the third region not exposed to the second radiation. The second radiation is different from the first radiation. The exposure of the first and second regions of the expanse to the first and second radiations alters the solubility of the first and second regions in a solvent relative to the solubility of the third region of the expanse. After the first and second regions of the expanse are exposed to the first and second radiations, the expanse is exposed to a solvent to pattern the expanse. The invention can be utilized in forming radiation-patterning tools and stencils; and in pattering semiconductor substrates.

公开(公告)号：US06521049B1

公开(公告)日：2003-02-18

申请号：US09327152

申请日：1999-06-07

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： B08B304

CPC分类号： H01L21/02052 ,  B01D19/0036 ,  B01D19/0068 ,  B08B3/04 ,  B08B3/14 ,  H01L21/67057 ,  H01L21/67086 ,  Y10S134/902 ,  Y10S438/906

摘要： A method for wet processing of a semiconductor-containing substrate that reduces contamination in the wet process by removing undesired sources of gas contamination, the method comprising: pumping a processing liquid through a degasifier, exposing the semiconductor wafer, in a vessel, to the degasified processing liquid; and optionally recirculating the processing liquid through the degasifier and back into the vessel.

摘要翻译： 一种用于湿处理含半导体的衬底的方法，其通过去除不期望的气体污染源来减少湿法中的污染，所述方法包括：通过脱气器泵送处理液体，将容器中的半导体晶片暴露于脱气 处理液体; 并且可选地将处理液体再循环通过脱气器并返回到容器中。

公开(公告)号：US06472109B2

公开(公告)日：2002-10-29

申请号：US09735431

申请日：2000-12-12

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F900

CPC分类号： H01L21/3065

摘要： In one aspect, the invention includes a method of maintaining dimensions of an opening in a semiconductive material stencil mask comprising providing two different dopants within a periphery of the opening, the dopants each being provided to a concentration of at least about 1017 atoms/cm3. In another aspect, the invention includes a method of manufacturing a stencil mask from a semiconductive material comprising: a) providing a semiconductive material wafer, the wafer comprising an upper portion and a lower portion beneath the upper portion; b) forming openings extending through the upper portion of the wafer and to the lower portion of the wafer; c) forming a first dopant concentration within the wafer, the first dopant concentration being greater within the upper portion of the wafer than within at least a part of the lower portion of the wafer; d) providing a second dopant concentration within the upper portion of the wafer; and e) removing the lower portion of the wafer to leave a stencil mask substrate having openings formed therethrough. In yet another aspect, the invention comprises a semiconductive material stencil mask comprising: a) a semiconductive material substrate having an opening therethrough, the opening being defined by a periphery comprising the semiconductive material; and b) two different dopants within the semiconductive material at the periphery, the two different dopants being of a same conductivity type.

摘要翻译： 一方面，本发明包括一种在半导体材料模板掩模中保持开口的尺寸的方法，包括在开口的周边内提供两种不同的掺杂剂，所述掺杂剂各自提供至少约1017原子/ cm3的浓度。 另一方面，本发明包括从半导体材料制造模版掩模的方法，包括：a）提供半导体材料晶片，所述晶片包括在上部下方的上部和下部; b）形成延伸穿过晶片的上部和晶片下部的开口; c）在所述晶片内形成第一掺杂剂浓度，所述第一掺杂剂浓度在所述晶片的上部内比在所述晶片的下部的至少一部分内更大; d）在晶片的上部提供第二掺杂剂浓度; 以及e）去除晶片的下部以留下具有通过其形成的开口的模板掩模基板。 在另一方面，本发明包括半导体材料模板掩模，其包括：a）具有穿过其中的开口的半导体材料基板，所述开口由包括半导体材料的外围限定; 和b）外围半导体材料中的两种不同的掺杂剂，两种不同的掺杂剂具有相同的导电类型。

公开(公告)号：US06455918B2

公开(公告)日：2002-09-24

申请号：US09175049

申请日：1998-10-19

申请人： J. Brett Rolfson ,  Monte Manning

发明人： J. Brett Rolfson ,  Monte Manning

IPC分类号： H01L2900

CPC分类号： H01L28/20 ,  H01L21/76888 ,  H01L21/76895 ,  H01L27/11 ,  H01L27/1112 ,  Y10S257/903 ,  Y10S257/904 ,  Y10S438/98

摘要： Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating resistors and diodes. A node to which electrical connection is to be made is provided. An electrically insulative layer is provided outwardly of the node. An opening is provided in the electrically insulative layer over the node. The opening is filled with semiconductive material which depending on configuration serves as one or both of a vertically elongated diode and resistor.

摘要翻译： 公开了从半导体材料形成电阻器和二极管的方法，以及结合电阻器的静态随机存取存储器（SRAM）单元以及并入电阻器和二极管的集成电路的方法。 提供要进行电连接的节点。 在节点外部设置一个电绝缘层。 在节点上的电绝缘层中设置开口。 开口填充有半导体材料，其取决于配置用作垂直细长的二极管和电阻器中的一个或两个。

公开(公告)号：US06432764B1

公开(公告)日：2002-08-13

申请号：US09452728

申请日：1999-11-30

申请人： J. Brett Rolfson ,  Monte Manning

发明人： J. Brett Rolfson ,  Monte Manning

IPC分类号： H01L218234

摘要： Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating resistors and diodes. A node to which electrical connection is to be made is provided. An electrically insulative layer is provided outwardly of the node. An opening is provided in the electrically insulative layer over the node. The opening is filled with semiconductive material which depending on configuration serves as one or both of a vertically elongated diode and resistor.