公开(公告)号：US06863592B2

公开(公告)日：2005-03-08

申请号：US10291357

申请日：2002-11-08

Applicant: Jong-won Lee ,  Chang-ki Hong ,  Jae-dong Lee

Inventor： Jong-won Lee ,  Chang-ki Hong ,  Jae-dong Lee

IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  B24B1/00

CPC classification number: H01L21/31053 ,  C09G1/02

Abstract: CMP (chemical/mechanical polishing) slurries that can rapidly remove a target layer and can effectively passivate a polishing stopper, with high selectivity. In one aspect, a CMP slurry comprises metal oxide abrasive particles, a removal rate accelerator, an anionic polymeric passivation agent having a molecular weight in a range of about 1,000 to about 100,000, a C1-C12 anionic passivation agent, and water.

Abstract translation: CMP（化学/机械抛光）浆料，可以快速去除目标层，并可以高选择性有效钝化抛光终止剂。 在一个方面，CMP浆料包含金属氧化物磨料颗粒，去除速率促进剂，分子量在约1,000至约100,000范围内的阴离子聚合物钝化剂，C1-C12阴离子钝化剂和水。

公开(公告)号：US06858452B2

公开(公告)日：2005-02-22

申请号：US10688610

申请日：2003-10-17

Applicant: Jeong-heon Park ,  Chang-ki Hong ,  Jae-dong Lee ,  Young-rae Park ,  Ho-Young Kim

Inventor： Jeong-heon Park ,  Chang-ki Hong ,  Jae-dong Lee ,  Young-rae Park ,  Ho-Young Kim

IPC: H01L21/304 ,  H01L21/321 ,  H01L21/60 ,  H01L21/66

CPC classification number: H01L21/76897 ,  H01L21/3212 ,  H01L22/00

Abstract: A method for isolating SAC pads of a semiconductor device, including determining a chemical mechanical polishing process time necessary to isolate the SAC pads a desired amount by referring to a relationship equation between the extent of isolation of the self-aligned contact pads and the chemical-mechanical polishing process time. The chemical mechanical polishing process is performed for the determined process time on the semiconductor device to isolate the self-aligned contact pads the desired amount. The relationship equation is determined using a test semiconductor device.

Abstract translation: 一种用于分离半导体器件的SAC焊盘的方法，包括通过参考自对准接触焊盘的隔离程度与化学机械抛光处理时间之间的关系式来确定将SAC焊盘隔离所需量所需的化学机械抛光处理时间， 机械抛光加工时间。 对半导体器件上确定的处理时间执行化学机械抛光工艺，以将自对准接触焊盘隔离所需量。 使用测试半导体器件确定关系式。

公开(公告)号：US06380568B1

公开(公告)日：2002-04-30

申请号：US09604772

申请日：2000-06-28

Applicant: Jae-Dong Lee ,  Sang-Joo Lee

Inventor： Jae-Dong Lee ,  Sang-Joo Lee

IPC: H01L2972

CPC classification number: H01L27/14609 ,  H01L27/14643

Abstract: A CMOS image sensor containing a plurality of unit pixels, each unit pixel having a light sensing region and a peripheral circuit region, includes: a semiconductor substrate of a first conductive type; a transistor formed on the peripheral circuit region of the semiconductor substrate, wherein the transistor has a gate oxide layer and a gate electrode formed on the gate oxide layer; spacers formed on sidewalls of the gate oxide layer and the gate electrode, wherein one spacer are formed on the light sensing region; a first doping region of a second conductive type formed on the light sensing region, wherein the first doping region is extended to an edge of the gate electrode; and a second doping region of the first conductive type formed on the first doping region, wherein the second doping region is extended to an edge of a spacer formed on the light sensing region.

Abstract translation: 包含多个单位像素的CMOS图像传感器，具有光感测区域和外围电路区域的每个单位像素包括：第一导电类型的半导体衬底; 形成在所述半导体衬底的外围电路区域上的晶体管，其中所述晶体管具有形成在所述栅极氧化物层上的栅极氧化物层和栅电极; 形成在栅极氧化物层和栅电极的侧壁上的间隔物，其中一个间隔物形成在光感测区域上; 形成在所述光感测区域上的第二导电类型的第一掺杂区域，其中所述第一掺杂区域延伸到所述栅电极的边缘; 以及形成在所述第一掺杂区域上的所述第一导电类型的第二掺杂区域，其中所述第二掺杂区域延伸到形成在所述光感测区域上的间隔物的边缘。