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61.发明授权公开(公告)号：US11131928B2
公开(公告)日：2021-09-28
申请号：US16088440
申请日：2017-03-29
发明人： Yuki Usui , Takahiro Kishioka , Yasushi Sakaida , Hiroto Ogata
IPC分类号： G03F7/11 , C08K5/3445 , C08L63/00 , C08K5/00 , G03F7/40
摘要： The invention provides a resist underlayer film forming composition which contains a compound having a glycoluril skeleton and which prevents collapse of a resist pattern formed on a substrate in a lithography process during semiconductor production; a resist underlayer film which uses this composition; and a method for producing a semiconductor device. The compound is of formula (1-1), wherein each of R1-R4 represents a C2-C10 alkyl group wherein a hydrogen atom is substituted by at least one substituent selected from the group consisting of a hydroxy group, a thiol group, a carboxyl group, C1-C5 alkoxyethyl groups, C1-C5 alkylsulfanyl groups and organic groups containing an ester bond, or a C2-C10 alkenyl group; the R1-R4 moieties may be the same as or different from each other; and each of R5 and R6 represents a hydrogen atom or a group selected from among C1-C10 alkyl groups and a phenyl group.
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公开(公告)号：US20210292699A1
公开(公告)日：2021-09-23
申请号：US17266464
申请日：2019-08-06
摘要： The device has a film-shaped main body part 1, and predetermined region in the film surface of the main body part has a mesh structure in which a large number of through-holes 20 are arranged. The through-hole has an opening shape having a size allowing smaller cell aggregates to pass through, and the rest of the through-hole is the beam part 30. The beam part is a part that cuts a cell aggregate to be divided, and is integrally connected to form a network. The cell aggregate can be divided by passing the cell aggregate to be divided through the mesh structure of the device together with the liquid.
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公开(公告)号：US20210188894A1
公开(公告)日：2021-06-24
申请号：US16077969
申请日：2017-02-17
发明人： Kohji SEIO , Yoshiaki MASAKI , Keishi YAMAMOTO , Keita YOSHIDA , Yusuke IRIYAMA , Hiroyuki NAKAJIMA , Tatsuro KANAKI
IPC分类号： C07H21/02 , C07H19/067
摘要： Provided is an artificial nucleoside or artificial nucleotide capable of composing an artificial oligonucleotide having superior nuclease resistance. The artificial nucleoside or artificial nucleotide is a compound represented by formula (I) or a salt thereof (wherein, Bx represents a pyrimidine base or purine base, R1, R2, R3 and R4 represent hydrogen atoms, C1-6 alkyl groups or the like, Y represents NR5R6 (wherein, R5 and R6, independently of each other, represent a hydrogen atom, C1-6 alkyl group or the like, or R5 and R6, together with a nitrogen atom bound thereto, form a 3- to 11-membered nitrogen-containing non-aromatic heterocyclic group) or an optionally substituted C2-9 aromatic heterocyclic group, Z1 and Z2 represent hydrogen atoms, hydroxyl group-protecting groups, phosphorous-containing groups or the like, and n represents an integer of 1 to 3).
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公开(公告)号：US20210159421A1
公开(公告)日：2021-05-27
申请号：US17257762
申请日：2019-07-04
发明人： Toshiyuki ENDO , Hirofumi OTA
摘要： This composition for forming a charge-transporting thin film, which contains an organic solvent and a charge-transporting substance precursor that has a 9-t-butoxycarbonyl carbazole structure in the molecule, yields a thin film that exhibits excellent charge transport properties even when firing is performed at a low temperature. As pertains to the charge-transporting substance precursor, the composition can be prepared using a low-polarity solvent that causes less damage to a substrate or a member comprising an organic compound than is the case with a high-polarity amide-based solvent, etc.
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65.发明申请公开(公告)号：US20210130666A1
公开(公告)日：2021-05-06
申请号：US17052223
申请日：2019-04-23
IPC分类号： C09J183/04 , C09J11/06 , C09J5/04 , H01L21/683 , H01L21/304 , B32B7/06
摘要： A temporary adhesive without the formation of voids between a support and a wafer. A temporary adhesive for separatably attaching a support to a circuit side of a wafer to process a rear surface of the wafer, the temporary adhesive including a component (A) that is cured by a hydrosilylation reaction; a polymerization inhibitor (B) having a 5% mass decrease temperature of 80° C. or higher as measured using a Tg-DTA; and a solvent (C). The component (A) may include a polysiloxane (A1) including a polyorganosiloxane (a1) containing a C1-10 alkyl group and a C2-10 alkenyl group, and a polyorganosiloxane (a2) containing a C1-10 alkyl group and a hydrogen atom; and a platinum group metal-based catalyst (A2). The polymerization inhibitor (B) may be a compound of formula (1): (wherein R7 and R8 are each a C6-40 aryl group, or a combination of a C1-10 alkyl group and a C6-40 aryl group).
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66.发明授权公开(公告)号：US10995172B2
公开(公告)日：2021-05-04
申请号：US16478018
申请日：2018-01-16
IPC分类号： B05D5/00 , H01L21/027 , C08F293/00 , B05D3/00 , C08F299/02
摘要： A self-assembled film-forming composition for orthogonally inducing, with respect to a substrate, a microphase separation structure in a layer including a block copolymer, in the whole surface of a coating film, even at high heating temperatures at which arrangement failure of the microphase separation of the block copolymer occurs. The self-assembled film-forming composition includes a block copolymer, and at least two solvents having different boiling points as a solvent. The block copolymer is obtained by bonding: a non-silicon-containing polymer having, as a structural unit, styrene, a derivative thereof, or a structure derived from a lactide; and a silicon-containing polymer having, as a structural unit, styrene substituted with silicon-containing groups. The solvent includes: a low boiling point solvent (A) having a boiling point of 160° C. or lower; and a high boiling point solvent (B) having a boiling point of 170° C. or higher.
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公开(公告)号：US20210122928A1
公开(公告)日：2021-04-29
申请号：US17257068
申请日：2019-07-03
发明人： Masayuki HIGASHI
IPC分类号： C09D5/24 , C08G61/12 , C08K5/54 , C08K3/36 , C08K5/42 , C08K13/02 , C09D7/20 , C09D7/63 , C09D7/61 , C09D165/00 , H01L51/00
摘要： Provided is a charge-transporting composition that contains: a charge-transporting substance comprising a polythiophene derivative of formula (1) or an amine adduct thereof; an organosilane compound selected from fluoroalkyl-group-containing silanes, etc.; metal oxide nanoparticles; and an organic solvent. (R1 and R2 are, mutually independently, a hydrogen atom, a C1-40 alkoxy group, —O—[Z—O]p—Re, a sulfonic acid group, etc., or are —O—Y—O— formed by the bonding of R1 and R2; Y is a C1-40 alkylene group that may contain an ether bond, or may be substituted with a sulfonic acid group; Z is a C1-40 alkylene group that may be substituted with a halogen atom; p is an integer of 1 or greater; and Re is a hydrogen atom, a C1-40 alkyl group, etc.)).
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公开(公告)号：US20210098703A1
公开(公告)日：2021-04-01
申请号：US16464619
申请日：2017-12-01
发明人： Juro OSHIMA , Shun SUGAWARA , Takuji YOSHIMOTO
IPC分类号： H01L51/00 , C08G73/02 , C08K5/5419 , C08K5/42 , C09D5/24 , C09D179/02 , C09D7/45 , C09D7/63
摘要： This composition for a hole collecting layer of an organic photoelectric conversion element contains: a charge-transporting substance comprising a polyaniline derivative represented by formula (1); a fluorine-based surfactant; and a solvent. The composition provides a thin film suitable for a hole collecting layer of an organic photoelectric conversion element, and is particularly suited for producing an inverse lamination type organic photoelectric conversion element. (In the formula, R1 to R6 each independently represent a hydrogen atom, etc., but one of R1 to R4 is a sulfonic acid group, one or more of the remaining R1 to R4 are a C1-20 alkoxy group, a C1-20 thioalkoxy group, a C1-20 alkyl group, a C2-20 alkenyl group, a C2-20 alkynyl group, a C1-20 haloalkyl group, a C6-20 aryl group, or a C7-20 aralkyl group, and m and n are numbers which satisfy 0≤m≤1, 0≤n≤1 and m+n=1.)
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69.发明申请公开(公告)号：US20210024773A1
公开(公告)日：2021-01-28
申请号：US16647146
申请日：2018-09-12
IPC分类号： C09D163/00 , G03F7/11 , G03F7/20 , G03F7/26 , H01L21/027
摘要： A stepped substrate coating composition for forming a coating film having planarity on a substrate, including: a main agent and a solvent, the main agent containing a compound (A), a compound (B), or a mixture thereof, the compound (A) having a partial structure Formula (A-1) or (A-2): and the compound (B) having at least one partial structure selected from Formulae (B-1)-(B-5), or having a partial structure including a combination of a partial structure of Formula (B-6) and a partial structure of Formula (B-7) or (B-8): where the composition is cured by photoirradiation or by heating at 30° C.-300° C.; and the amount of the main agent in the solid content of the composition is 95%-100% by mass.
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公开(公告)号：US20210018840A1
公开(公告)日：2021-01-21
申请号：US16981801
申请日：2019-03-18
摘要： A resist underlayer film-forming composition for lithography can produce a semiconductor device; specifically, for forming a resist underlayer film that can be used as a hard mask. It includes a hydrolysis condensate (c) of a hydrolyzable silane (a) as a silane, nitric acid ions, and a solvent, wherein the hydrolyzable silane (a) contains a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4-(a+b) Formula (1) [wherein R1 is an organic group of the following Formula (2): and is bonded to a silicon atom via an Si—C bond]. The composition may further include the hydrolyzable silane (a) and/or a hydrolysate (b) thereof. The amount of the nitric acid ions may fall within a range of 1 ppm to 1,000 ppm. In the hydrolysis condensate (c), the functional group of Formula (2) in the hydrolyzable silane of Formula (1) may satisfy a (hydrogen atom)/(hydrogen atom+R5 group) ratio by mole of 1% to 100%.
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