公开(公告)号：US20240301126A1

公开(公告)日：2024-09-12

申请号：US18616255

申请日：2024-03-26

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Shigetaka OTAGIRI ,  Tokio NISHITA ,  Takafumi ENDO ,  Yuki ENDO ,  Takahiro KISHIOKA

IPC: C08G59/14 ,  C08G59/16 ,  C08G59/26 ,  C08G59/62 ,  C08G59/68 ,  H01L21/027 ,  H01L21/67

CPC classification number: C08G59/1483 ,  C08G59/1455 ,  C08G59/26 ,  C08G59/621 ,  C08G59/68 ,  H01L21/027 ,  H01L21/67075

Abstract: A protective film-forming composition including good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of semiconductor substrates, including good coverage even in stepped substrates, and from which flat films can be formed due to a small difference in film thickness after embedding; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. A protective film-forming composition which protects against a semiconductor wet etching liquid, wherein a reaction product (P) of a diepoxy compound (B) and an bifunctional proton-generating compound (C) contains a structure represented by formula (1) (in formula (1), Ar represents a C6-40 aryl group, n represents an integer of 2-10, —Y— represents—OCO—, —O— or —S—, and * represents the bonding site with the reaction product (P) molecule terminal). The protective film-forming composition further includes an organic solvent (S).

公开(公告)号：US20220404706A1

公开(公告)日：2022-12-22

申请号：US17765722

申请日：2020-10-27

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Takafumi ENDO

IPC: G03F7/11 ,  C09D163/00 ,  C09D7/63 ,  H01L21/027

Abstract: A protective film forming composition which has a good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of a semiconductor substrate and also has good coverage even for a stepped substrate, and from which a flat film can be formed due to a small difference in film thickness after being embedded; a protective film produced using the composition; a substrate with a resist pattern; and a method for producing a semiconductor device. This composition contains: (A) a compound having three or more carboxyl groups; (B) a resin or a monomer; and a solvent. The compound (A) having three or more carboxyl groups preferably has a ring structure. This ring structure is preferably selected from among an aromatic ring having 6-40 carbon atoms, an aliphatic ring having 3-10 carbon atoms, and a heterocyclic ring.

公开(公告)号：US20220397828A1

公开(公告)日：2022-12-15

申请号：US17619433

申请日：2020-06-17

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Takafumi ENDO ,  Yuki ENDO

IPC: G03F7/11 ,  G03F7/42 ,  G03F7/004 ,  H01L21/027 ,  H01L21/308

Abstract: A resist underlayer film that exhibits removability and preferably solubility only in wet etching reagent solutions, while exhibiting good resistance to resist developers that are resist solvents or aqueous alkali solutions. The composition for forming a resist underlayer film includes a dicyanostyryl group-bearing polymer (P) or dicyanostyryl group-bearing compound (C) and includes solvent, and does not contain a protonic acid curing catalyst and does not contain an alkylated aminoplast crosslinking agent derived from melamine, urea, benzoguanamine, or glycoluril.

公开(公告)号：US20220319839A1

公开(公告)日：2022-10-06

申请号：US17619542

申请日：2020-06-17

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Takafumi ENDO ,  Yuki ENDO

IPC: H01L21/027 ,  C07D251/34

Abstract: A resist underlayer film, which, while exhibiting excellent resistance to a resist developer which is a resist solvent or an alkaline aqueous solution, exhibits removability, and preferably solubility, only in wet etching chemicals. This composition for forming a resist underlayer film contains a solvent, a heterocyclic compound having a dicyanostyryl group, a cyclic compound including an amide group, for example, and the reaction product of a heterocyclic compound precursor having an epoxy group and an active proton compound, for example.

公开(公告)号：US20200301278A1

公开(公告)日：2020-09-24

申请号：US16500626

申请日：2018-03-30

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Hikaru TOKUNAGA ,  Takafumi ENDO ,  Keisuke HASHIMOTO ,  Rikimaru SAKAMOTO

IPC: G03F7/11 ,  C08G65/40 ,  C09D171/12 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027 ,  H01L21/033 ,  H01L21/308

Abstract: A stepped substrate-coating composition having high properties of filling a pattern and capable of forming on a substrate a coating film that can be formed by photocuring, has flattening properties, and has high heat resistance after irradiation with light. A photocurable composition for coating a stepped substrate, the photocurable composition containing a polymer containing a unit structure of Formula (1): wherein A1, A2, and A3 are each independently an aromatic C6-100 ring optionally containing a heteroatom or a hydrocarbon group containing an aromatic C6-100 ring optionally containing a heteroatom, B1, B2, and B3 are each independently Formula (2): wherein R1 is a C1-10 alkylene group, a C1-10 alkenylene group, a C1-10 alkynylene group, a C6-40 arylene group, an oxygen atom, a carbonyl group, a sulfur atom, —C(O)—O—, —C(O)—NRa—, —NRb—, or a group including a combination thereof, R2 is a hydrogen atom or a C1-10 alkyl group.

公开(公告)号：US20230244141A1

公开(公告)日：2023-08-03

申请号：US18128503

申请日：2023-03-30

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Hikaru TOKUNAGA ,  Takafumi ENDO ,  Keisuke HASHIMOTO ,  Rikimaru SAKAMOTO

IPC: G03F7/008 ,  G03F7/11 ,  G03F7/40 ,  C08G59/68 ,  C08G59/14 ,  G03F7/09 ,  G03F7/038 ,  G03F7/004 ,  G03F7/027

CPC classification number: G03F7/008 ,  G03F7/11 ,  G03F7/40 ,  C08G59/68 ,  C08G59/14 ,  G03F7/094 ,  G03F7/038 ,  G03F7/0045 ,  G03F7/0275 ,  C08L63/00

Abstract: A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure, a hydrocarbon structure, and a solvent. The compound may have the photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure and the hydrocarbon structure in one molecule, or may be a combination of compounds which contain the structures in separate molecules.

公开(公告)号：US20220145119A1

公开(公告)日：2022-05-12

申请号：US17433523

申请日：2020-03-03

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Takafumi ENDO ,  Tokio NISHITA

IPC: C09D163/00 ,  C09D5/00 ,  C08G59/26 ,  C08G59/24 ,  C08G59/42 ,  C08G59/66 ,  G03F7/11 ,  H01L21/311 ,  H01L21/306 ,  H01L21/308

Abstract: A protective film forming composition which has good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of a semiconductor substrate and also has good coverage even in a stepped substrate, and from which a flat film can be formed due to a small difference in film thickness after being embedded; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. This protective film forming composition against a wet etching liquid for semiconductors contains an organic solvent and a polymer having, at a terminal thereof, a structure containing at least one pair of two adjacent hydroxyl groups in a molecule. The structure containing two adjacent hydroxyl groups in a molecule may be 1,2-ethanediol structure (A).

公开(公告)号：US20220026806A1

公开(公告)日：2022-01-27

申请号：US17311965

申请日：2020-01-20

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Tokio NISHITA ,  Takafumi ENDO ,  Yuki ENDO ,  Takahiro KISHIOKA

IPC: G03F7/11 ,  C08F212/14 ,  C09D125/18 ,  C09D133/14 ,  C08F220/28 ,  H01L21/027

Abstract: A composition for forming a protective film having excellent resistance to a wet etching solution for semiconductors during a lithographic process in the manufacture of semiconductors; a method of forming a resist pattern using said protective film; and a method for manufacturing a semiconductor device. This composition for forming a protective film against a wet etching solution for semiconductors includes: a compound or polymer which contains at least one among an acetal structure and an amide structure; and a solvent. The polymer is preferably a copolymer of: a compound (a) containing at least one acetal structure in a molecule; and a compound (b) containing at least one amide structure in a molecule.

公开(公告)号：US20200319561A1

公开(公告)日：2020-10-08

申请号：US16955178

申请日：2018-12-20

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Takafumi ENDO ,  Yasunobu SOMEYA ,  Takahiro KISHIOKA

IPC: G03F7/40 ,  H01L21/308 ,  C23C16/02 ,  C23C16/455 ,  G03F7/11 ,  C08L33/06 ,  C08L33/14

Abstract: A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one pair including two adjacent hydroxyl groups in a molecule thereof, and forms a protective film which can quickly be removed by dry etching and exhibits excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.

公开(公告)号：US20200225585A1

公开(公告)日：2020-07-16

申请号：US16637974

申请日：2018-08-08

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Takafumi ENDO ,  Hikaru TOKUNAGA

IPC: G03F7/11 ,  C09D4/00 ,  C09D7/63 ,  G03F7/16 ,  H01L21/027

Abstract: A stepped substrate-coating composition for forming a coating film having filling property of a pattern and flattening property including a compound (E) having a partial structure (I) and a partial structure (II) having a hydroxy group formed by a reaction of an epoxy group with a proton-generating compound, a solvent (F), and a crosslinkable compound (H), wherein the partial structure (I) is from Formulae (1-1) to (1-5) or including a partial structure of Formula (1-6) combined with a partial structure of Formula (1-7) or (1-8), and the partial structure (II) is of the following Formula (2-1) or (2-2), wherein the compound (E) contains the epoxy and hydroxy group at a molar ratio (epoxy group)/(hydroxy group) of 0 or more and 0.5 or less, and contains the partial structure (II) so the molar ratio (partial structure (II))/(partial structure (I)+partial structure (II)) is 0.01 or more and 0.8 or less.