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公开(公告)号：US20200150340A1
公开(公告)日：2020-05-14
申请号：US16669845
申请日：2019-10-31
Inventor： Shinsuke Tanaka , Tatsuya Usuki
IPC: G02B6/12 , H01L31/0232 , H04B10/40
Abstract: An optical transmitter-receiver includes an optical integrated device in which at least an optical modulator and an optical detector are integrated as optical devices over the same substrate and an insulating layer is provided between the optical modulator and the substrate and between the optical detector and the substrate, and an electronic circuit chip that is connected to the optical integrated device and includes an electronic circuit including a ground wiring line. The optical integrated device includes a shield electrode between the optical modulator and the optical detector, and the shield electrode is provided sandwiching the insulating layer with the substrate to configure a capacitance and is connected to the ground wiring line of the electronic circuit chip. By the optical transmitter-receiver, crosstalk through the capacitance between the optical modulator and the substrate, the substrate, and the capacitance between the optical detector and the substrate can be suppressed to suppress deterioration of the reception characteristic.
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公开(公告)号：US20190384135A1
公开(公告)日：2019-12-19
申请号：US16440407
申请日：2019-06-13
Inventor： Shigeki TAKAHASHI , Junichi FUJIKATA
IPC: G02F1/225
Abstract: Provided is a SIS-type electro-optic modulator capable of realizing highly efficient optical coupling with a rib-type Si waveguide, improving modulation efficiency, realizing reduction of electric capacity and lead-out resistance in stacked semiconductor layers. The modulator includes a SIS junction constituted by first and second semiconductor layers having different type of conductivity and a dielectric layer interposed therebetween, wherein an electrical signal from electrodes coupled to the first and second semiconductor layers causes free carriers accumulate, deplete or invert on both sides of the dielectric layer, thereby modulating a free carrier concentration felt by an optical signal electric filed, light having a polarization component orthogonal to the width direction of the SIS junction is incident on the dielectric layer, and the width of the SIS junction is λ/neff or less (λ is the wavelength of the incident light and neff is an effective refractive index of the modulator to the incident light).
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公开(公告)号：US20190378949A1
公开(公告)日：2019-12-12
申请号：US16426573
申请日：2019-05-30
Inventor： Takasi SIMOYAMA
IPC: H01L31/075 , H01L31/107 , H01L31/105
Abstract: A disclosed optical semiconductor device includes a first semiconductor layer having a first refractive index and a first optical absorption coefficient; and a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a second refractive index and a second optical absorption coefficient. The second refractive index is larger than the first refractive index, and the second optical absorption coefficient is larger than the first optical absorption coefficient. The first semiconductor layer includes a first region of p-type, a second region of n-type, a third region of p-type or n-type between the first region and the second region, a fourth region of i-type between the first region and the third region, and a fifth region of i-type between the second region and the third region. The second semiconductor layer is formed on the first region, the fourth region, and the third region.
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公开(公告)号：US10274757B2
公开(公告)日：2019-04-30
申请号：US15559911
申请日：2016-02-17
Inventor： Junichi Fujikata , Shigeki Takahashi
Abstract: An electro-optic device includes a first semiconductor layer including the rib-type waveguide, which includes a rib part and a first slab part, which extends in a first direction from the rib part; a dielectric layer, which is formed on the rib part; a second semiconductor layer, which extends in a second direction, which is opposite to the first direction, from an upper surface of the dielectric layer; a first high-concentration impurity region, which is formed in the first semiconductor layer to be in contact with the first slab part on the first direction side; and a second high-concentration impurity region, which is formed in a region of the second semiconductor layer on the second direction side. The second high-concentration impurity region is formed in a region other than a region overlapping the first semiconductor layer in a lamination direction.
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公开(公告)号：US10247882B2
公开(公告)日：2019-04-02
申请号：US15692062
申请日：2017-08-31
Inventor： Tsuyoshi Horikawa , Tohru Mogami , Keizo Kinoshita
Abstract: Provided is an optical waveguide circuit avoiding the difficulty of the property compensation based on temperature control, compensated with respect to the property variations due to fabrication error, particularly paid attention in a silicon waveguide, and being low in power consumption and high in performances. The optical waveguide circuit includes a silicon (Si) substrate, a buried oxide film (BOX) layer formed on the Si substrate, and an SOI (Silicon on Insulator) layer, formed on the BOX layer, including an optical element utilizing the SOI layer as a main optical transmission medium. At least part of a waveguide of the optical element includes uniformly distributed and thermally unstable crystal defects.
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Patent Agency Ranking
公开(公告)号：US10164713B2
公开(公告)日：2018-12-25
申请号：US15868054
申请日：2018-01-11
Inventor： Shinsuke Tanaka , Tatsuya Usuki , Toshihiko Mori
IPC: H04B10/00 , H04B10/524 , G02F1/025
Abstract: An optical transmitter includes: a driving circuit that includes drivers each corresponding to a configuration bit of an input electrical data sequence; a MZ optical modulator that includes a first phase shifter provided in an arm and a second phase shifter provided in an arm; first capacitance elements that are electrically connected between the driving unit and the first phase shifter, each include an electric capacity weighted in response to a bit number of the configuration bit, and generate a first multilevel signal to be supplied to the first phase shifter; and second capacitance elements that are electrically connected between the driving circuit and the second phase shifter, each include an electric capacity weighted in response to a bit number of the configuration bit, and generate a second multilevel signal to be supplied to the second phase shifter.
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公开(公告)号：US10162110B2
公开(公告)日：2018-12-25
申请号：US15243718
申请日：2016-08-22
Inventor： Tatsuya Usami , Keiji Sakamoto , Yoshiaki Yamamoto , Shinichi Watanuki , Masaru Wakabayashi , Tohru Mogami , Tsuyoshi Horikawa , Keizo Kinoshita
Abstract: A semiconductor device is provided with an insulating layer formed on a base substrate, an optical waveguide composed of a semiconductor layer formed on the insulating layer, and an insulating film formed along an upper surface of the insulating layer and a front surface of the optical waveguide. A peripheral edge portion of a lower surface of the optical waveguide is separated from the insulating layer, and the insulating film is buried between the peripheral edge portion and the insulating layer.
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68.发明授权公开(公告)号：US10151877B2
公开(公告)日：2018-12-11
申请号：US15607957
申请日：2017-05-30
Inventor： Akinori Hayakawa
IPC: G02B6/12
Abstract: An optical circuit module comprises a substrate with a first optical coupler connected to a first optical waveguide and a second optical coupler connected to a second optical waveguide on a substrate surface side; and a semiconductor photonic device mounted on the substrate, wherein the semiconductor photonic device has a third optical waveguide and a fourth optical waveguide extending to a first end face that faces the substrate surface, and wherein the third optical waveguide is optically connected to the first optical coupler and the fourth optical waveguide is optically connected to the second optical coupler.
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公开(公告)号：US10088628B1
公开(公告)日：2018-10-02
申请号：US15838447
申请日：2017-12-12
Inventor： Yousuke Oonawa , Hideaki Okayama
Abstract: The optical waveguide element has a first optical waveguide core; and a second optical waveguide core. In the optical waveguide element, the first optical waveguide core includes a first coupling portion configured to propagate any one polarized wave of a TE polarized wave and a TM polarized wave of a kth-order mode, the other polarized wave of an hth-order mode, and the other polarized wave of a pth-order mode, and a first Bragg reflector connected to the first coupling portion. The second optical waveguide core includes a second coupling portion. The first Bragg reflector includes a rib waveguide including a grating configured to convert the one input polarized wave of the kth-order mode into the other polarized wave of the hth-order mode, reflect the converted polarized wave on the basis of Bragg reflection, and transmit the other input polarized wave of the pth-order mode, and slab waveguides having thicknesses smaller than that of the rib waveguide and integrally formed with the rib waveguide on both side surfaces of the rib waveguide respectively, in the light propagation direction.
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公开(公告)号：US10088299B2
公开(公告)日：2018-10-02
申请号：US15641384
申请日：2017-07-05
Inventor： Masatoshi Tokushima
Abstract: An alignment optical measurement element includes a grating coupler, and a reflector coupled to the grating coupler. The alignment optical measurement element is arranged so that: the grating coupler diffracts an incident light in a first direction into a first diffracted light to propagate the first diffracted light as a first propagating light in a second direction, the reflector reflects the first propagating light into a second propagating light in a third direction opposite to the second direction; and the grating coupler diffracts the second propagating light into a second diffracted light to emit the second diffracted light as an emitted light in a fourth direction opposite to the first direction.
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