公开(公告)号：US20250046617A1

公开(公告)日：2025-02-06

申请号：US18362608

申请日：2023-07-31

Applicant: Tokyo Electron Limited

Inventor： Adam Pranda ,  Yusuke Yoshida ,  Aelan Mosden ,  Yun Han

IPC: H01L21/311 ,  H01J37/32 ,  H01L29/66

Abstract: A method of processing a substrate that includes: forming a bottom passivation layer including an oxide over a first portion of a dielectric layer at a bottom of a recess of the substrate, the recess having sidewalls including a second portion of the dielectric layer; and performing a lateral etch to etch the second portion of the dielectric layer, the bottom passivation layer covering the first portion of the dielectric layer during the lateral etch, and where the forming of the bottom passivation layer includes exposing the substrate to a first plasma including a halogen, and exposing the substrate to a second plasma including oxygen to form the bottom passivation layer.

公开(公告)号：US20250046615A1

公开(公告)日：2025-02-06

申请号：US18918152

申请日：2024-10-17

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Ryutaro SUDA ,  Takatoshi ORUI

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

公开(公告)号：US20250046614A1

公开(公告)日：2025-02-06

申请号：US18362652

申请日：2023-07-31

Applicant: Tokyo Electron Limited

Inventor： Mehrdad Rostami ,  Yu-Hao Tsai ,  Toru Hisamatsu

IPC: H01L21/3065 ,  H01L21/033

Abstract: A method of processing a substrate that includes: forming a photoresist layer including a metal and oxygen over a substrate including silicon; patterning the photoresist layer using an extreme ultraviolet (EUV) photolithographic process, a portion of the substrate being exposed after the patterning; and performing an atomic layer etching (ALE) process to etch the substrate selectively relative to the patterned photoresist layer.

公开(公告)号：US20250043414A1

公开(公告)日：2025-02-06

申请号：US18778072

申请日：2024-07-19

Applicant: Tokyo Electron Limited

Inventor： Kazumi KUBO

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/458 ,  C23C16/56

Abstract: A film-forming method for forming a titanium oxynitride film on a substrate includes: (a) supplying a titanium-containing gas to the substrate; and (b) supplying an oxidizing gas to the substrate to which the titanium-containing gas is supplied, and supplying a shape control gas to an area same as that to which the oxidizing gas is supplied, thereby adjusting a shape of the titanium oxynitride film.

公开(公告)号：US12217956B2

公开(公告)日：2025-02-04

申请号：US17647996

申请日：2022-01-14

Applicant: Tokyo Electron Limited

Inventor： Yosuke Watanabe ,  Shota Chida

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/56

Abstract: A carbon film deposition method includes supplying a carbon-containing gas and a halogen gas to a substrate to deposit a carbon film on the substrate by using chemical vapor deposition, and supplying a gas that reacts with halogens constituting the halogen gas to reduce the halogens contained in the carbon film. A cycle including the supplying of the carbon-containing gas and the halogen gas and the supplying of the gas that reacts with the halogens is repeated a plurality of times.

公开(公告)号：US12217943B2

公开(公告)日：2025-02-04

申请号：US17846033

申请日：2022-06-22

Applicant: Tokyo Electron Limited

Inventor： Kohei Otsuki ,  Shin Yamaguchi ,  Daisuke Satake

IPC: H01J37/32 ,  H01L21/683

Abstract: A substrate processing apparatus is provided. The apparatus comprises a chamber; a substrate support which is arranged in the chamber and has at least one first gas supply path; and at least one control valve configured to control a flow rate or pressure of gas supplied through the at least one first gas supply path. The substrate support includes a base, and an electrostatic chuck which is arranged on the base and has an upper surface. The upper surface has a plurality of protrusions and a first annular groove group. The first annular groove group comprises a first inner annular groove, a first intermediate annular groove, and a first outer annular groove. Any one of the first inner annular groove, the first intermediate annular groove, and the first outer annular groove communicates with the at least one first gas supply path.

公开(公告)号：US12217941B2

公开(公告)日：2025-02-04

申请号：US18008642

申请日：2021-06-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoru Kawakami

IPC: H01J37/32 ,  B08B7/00 ,  H01L21/02 ,  H01L21/683

Abstract: A plasma processing apparatus for cleaning a peripheral portion of a substrate by plasma and comprising a depressurizable processing container accommodating a substrate is disclosed. The processing container includes a substrate support for supporting a substrate and including a central electrode facing a central portion of the supported substrate supported by the substrate support; a lower ring electrode formed in a ring shape to face a lower surface of a peripheral portion of the substrate supported by the substrate support; and an upper ring electrode disposed to face an upper surface of the peripheral portion of the substrate supported by the substrate support. The central electrode is grounded, a radio frequency (RF) power is supplied to each of the upper and lower ring electrodes, and the RF power is supplied to at least one of the upper and lower ring electrodes via a phase adjuster configured to adjust the phase of the RF power.

公开(公告)号：US12217935B2

公开(公告)日：2025-02-04

申请号：US17807076

申请日：2022-06-15

Applicant: Tokyo Electron Limited

Inventor： Ya-Ming Chen ,  Shyam Sridhar ,  Peter Lowell George Ventzek ,  Alok Ranjan

IPC: H01J37/32

Abstract: A plasma processing method includes generating a plasma within a processing chamber using source power to ignite a glow phase of the plasma, generating low-energy ions at a substrate supported by a substrate holder in the processing chamber from the plasma using lower-frequency radio frequency bias power applied during the glow phase, and generating high-energy ions at the substrate using higher-frequency radio frequency bias power applied during an afterglow phase of the plasma. The frequency of the higher-frequency radio frequency bias power is greater than the frequency of the lower-frequency radio frequency bias power.

公开(公告)号：US12216406B2

公开(公告)日：2025-02-04

申请号：US17623392

申请日：2020-06-25

Applicant: Tokyo Electron Limited

Inventor： Yusaku Hashimoto ,  Masatoshi Kawakita ,  Kosuke Yoshihara

IPC: B05D1/00 ,  B05B12/04 ,  B05B13/02 ,  B05D1/40 ,  G03F7/16

Abstract: A coating method of supplying a treatment solution to a substrate and coating the substrate with the treatment solution by a spin coating method. The method includes mixing a solvent for the treatment solution lower in surface tension than the treatment solution into the treatment solution concurrently with a start of supply of the treatment solution or later than the start of the supply of the treatment solution, and then supplying the treatment solution to the substrate.

公开(公告)号：US12211911B2

公开(公告)日：2025-01-28

申请号：US17494460

申请日：2021-10-05

Applicant: Tokyo Electron Limited

Inventor： Andrew Metz ,  Caitlin Philippi ,  Sophie Thibaut

IPC: H01L29/417 ,  H01L29/40 ,  H01L29/66

Abstract: An exemplary method of forming a semiconductor device includes forming, in a substrate, an active region protruding vertically from a major surface of the substrate, the active region including a semiconductor source-drain (S/D) region and a first 3-D channel structure, the S/D region physically contacting the first 3-D channel structure, and forming an opening extending into the S/D region, the opening having a depth greater than half of a height of the first 3-D channel structure; and forming a metallic plug in the opening, the metallic plug making electrical contact with the S/D region.