公开(公告)号：US20140017820A1

公开(公告)日：2014-01-16

申请号：US14032599

申请日：2013-09-20

Applicant: Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

Inventor： Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

IPC: H01L43/12

CPC classification number: H01L43/10 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3909 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A method for forming a MTJ in a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于在自旋电子器件中形成MTJ的方法，并且包括在（Co / Ni）n组成的上覆层压层中增强垂直磁各向异性（PMA）的薄籽晶层。 种子层优选为NiCr，NiFeCr，Hf或其复合物。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US20130221460A1

公开(公告)日：2013-08-29

申请号：US13548859

申请日：2012-07-13

Applicant: Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

Inventor： Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC: H01L29/82 ,  H01L21/02

CPC classification number: H01L43/08 ,  H01L43/10

Abstract: A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction. The free layer may be a single layer or a composite and is comprised of a glassing agent that has a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. A CoFeB free layer selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region.

Abstract translation: 公开了一种自旋电子器件中的磁性元件或用作畴壁运动装置中的传播介质的磁性元件，其中分别具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面产生增强的表面垂直各向异性以增加热量 磁性隧道结中的稳定性。 自由层可以是单层或复合物，并且由在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 CoFeB自由层选择性地沿着第一和第二界面结晶，但是在含有玻璃试剂的中间区域保持非晶形特征，提供退火温度小于中间区域的结晶温度。

公开(公告)号：US20130221459A1

公开(公告)日：2013-08-29

申请号：US13408555

申请日：2012-02-29

Applicant: Guenole Jan ,  Yu-Jen Wang ,  Tong Ru Ying

Inventor： Guenole Jan ,  Yu-Jen Wang ,  Tong Ru Ying

IPC: H01L29/82 ,  H01L21/02

CPC classification number: H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic element is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction (MTJ). The free layer may be a single layer or a composite and is comprised of one or more glassing agents that have a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. As a result, a CoFeB free layer, for example, selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

Abstract translation: 公开了一种磁性元件，其中具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面分别产生增强的表面垂直各向异性以增加磁性隧道结（MTJ）中的热稳定性。 自由层可以是单层或复合物，并且由一个或多个在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 结果，例如，CoFeB自由层沿着第一界面和第二界面选择性地结晶，但是在含有提供退火温度的玻璃试剂的中间区域中保持无定形特征小于中间区域的结晶温度。 磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。

公开(公告)号：US08368600B2

公开(公告)日：2013-02-05

申请号：US12807601

申请日：2010-09-08

Applicant: Yu-Jen Wang ,  Wei-Bin Lee

Inventor： Yu-Jen Wang ,  Wei-Bin Lee

IPC: H01Q1/38 ,  H01Q1/24

CPC classification number: H01Q1/2275 ,  H01Q5/371 ,  H01Q9/42

Abstract: A dual-band antenna for use in a wireless network device comprises first, second, and third radiators. The first and second radiators are connected by a stand portion. The second radiator is a generally C-shaped plate having a connecting section and a free-end portion. A ground end and an input end are provided at predetermined positions of the connecting section and are respectively and electrically connected to a grounding portion and a control circuit of a substrate. The free-end portion overlaps with the orthogonal projection of the first radiator and is parallel to the first radiator. The third radiator is electrically connected to the second radiator via a conductive post and is parallel to the second radiator. The second and third radiators are provided on the substrate while the first radiator is provided outside the substrate. The first, second, and third radiators are parallel to and spaced apart from one another.

Abstract translation: 用于无线网络设备的双频天线包括第一，第二和第三散热器。 第一和第二散热器通过支架部分连接。 第二散热器是具有连接部和自由端部的大致C字形的板。 接地端和输入端设置在连接部分的预定位置处，并分别电连接到基板的接地部分和控制电路。 自由端部分与第一散热器的正交投影重叠并且平行于第一散热器。 第三散热器经由导电柱电连接到第二散热器，并且平行于第二散热器。 第二和第三散热器设置在基板上，而第一散热器设置在基板的外部。 第一，第二和第三散热器彼此平行并间隔开。

公开(公告)号：US08325405B2

公开(公告)日：2012-12-04

申请号：US13450574

申请日：2012-04-19

Applicant: Yu-Jen Wang ,  Chien-Shien Yeh ,  Chung-De Chen ,  Hung-Chung Li

Inventor： Yu-Jen Wang ,  Chien-Shien Yeh ,  Chung-De Chen ,  Hung-Chung Li

IPC: G02B26/08

CPC classification number: G02B26/0858 ,  G02B26/101

Abstract: The present invention provides a vibration-actuated micro mirror device comprising a substrate having a swinging frame and a reflection mirror, and a vibration part having a first and a second vibration structures coupled to the substrate, wherein the first vibration structure is driven to generate a first complex wave formed by a first and a second wave signals while the second vibration structure is driven to generate a second complex wave formed by a third and a fourth wave signals, and the first and the third wave signals are formed with the same frequency and phase while the second and the fourth wave signals are formed with the same frequency but opposite phases. The first and the second complex waves actuate the substrate such that the swinging frame is rotated about a first axis while the reflection mirror is rotated about a second axis.

公开(公告)号：US20120286382A1

公开(公告)日：2012-11-15

申请号：US13068398

申请日：2011-05-10

Applicant: Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

Inventor： Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

IPC: H01L29/82 ,  H01L21/02

CPC classification number: H01L43/10 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3909 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / Ni）n组合物等在上层叠层中提高垂直磁各向异性（PMA），其中n为2至30.种子层 优选为NiCr，NiFeCr，Hf，或其复合物，厚度为10〜100埃。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US08223003B2

公开(公告)日：2012-07-17

申请号：US12631502

申请日：2009-12-04

Applicant: Pin Chang ,  Yu-Jen Wang ,  Chien Li ,  Chung-De Chen ,  Pei-Fen Wu

Inventor： Pin Chang ,  Yu-Jen Wang ,  Chien Li ,  Chung-De Chen ,  Pei-Fen Wu

IPC: B62J3/00

CPC classification number: G01P3/16 ,  B62J6/003 ,  B62J6/06 ,  B62J6/20 ,  F03G7/08

Abstract: The present disclosure provides a swinging device having a swinging mechanism disposed on an energy provider, wherein volume and shape of the swinging mechanism and a distance between the swinging mechanism and the energy provider are adjusted so as to control the ratio of the distance and a characteristic value corresponding to the swinging mechanism in a specific range such that the swinging mechanism is capable of resonating with respect to the rotation of the energy provider. The swinging mechanism is capable of detecting the rotating frequency of the energy provider as well as combining with a display unit which is capable of displaying information with respect to the rotating status or displaying image patterns controlled according to the rotating status.

Abstract translation: 本公开提供了一种具有设置在能量提供者上的摆动机构的摆动装置，其中调节摆动机构的体积和形状以及摆动机构和能量提供者之间的距离，以便控制距离和特性的比率 相应于摆动机构的特定范围的值，使得摆动机构能够相对于能量提供者的旋转而谐振。 摆动机构能够检测能量提供者的旋转频率，以及与能够显示关于旋转状态的信息的显示单元或显示根据旋转状态控制的图像模式的组合。

公开(公告)号：US08218214B2

公开(公告)日：2012-07-10

申请号：US12963024

申请日：2010-12-08

Applicant: Yu-Jen Wang ,  Chien-Shien Yeh ,  Chung-De Chen ,  Hung-Chung Li

Inventor： Yu-Jen Wang ,  Chien-Shien Yeh ,  Chung-De Chen ,  Hung-Chung Li

IPC: G02B26/08

CPC classification number: G02B26/0858 ,  G02B26/101

Abstract: The present invention provides a vibration-actuated micro mirror device comprising a substrate having a swinging frame and a reflection mirror, and a vibration part having a first and a second vibration structures coupled to the substrate, wherein the first vibration structure is driven to generate a first complex wave formed by a first and a second wave signals while the second vibration structure is driven to generate a second complex wave formed by a third and a fourth wave signals, and the first and the third wave signals are formed with the same frequency and phase while the second and the fourth wave signals are formed with the same frequency but opposite phases. The first and the second complex waves actuate the substrate such that the swinging frame is rotated about a first axis while the reflection mirror is rotated about a second axis.

Abstract translation: 本发明提供了一种振动致动的微反射镜装置，其包括具有摆动框架和反射镜的基板以及具有联接到基板的第一和第二振动结构的振动部分，其中第一振动结构被驱动以产生 第一复波由第一和第二波信号形成，而第二振动结构被驱动以产生由第三和第四波信号形成的第二复波，并且第一和第三波信号以相同频率形成，并且 而第二和第四波信号以相同频率但相反的相位形成。 第一和第二复合波激活基板，使得摆动框架围绕第一轴线旋转，同时反射镜绕第二轴线旋转。

公开(公告)号：US08154847B2

公开(公告)日：2012-04-10

申请号：US12209210

申请日：2008-09-12

Applicant: Yu-Jen Wang

Inventor： Yu-Jen Wang

IPC: H01G4/005 ,  H01G4/06

CPC classification number: H01L23/5223 ,  H01L27/0207 ,  H01L28/87 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A capacitor structure is disclosed. The capacitor structure includes at least a D1+ first-level array. The D1+ first-level array comprises three first D1+ conductive pieces and a second D1+ conductive piece. Two of the first D1+ conductive pieces are disposed in a first row of the D1+ first-level array, and the remaining first D1+ conductive piece and the second D1+ conductive piece are disposed in a second row of the D1+ first-level array from left to right. The adjacent first D1+ conductive pieces are connected to each other, and the first D1+ conductive pieces are not connected to the second D1+ conductive piece.

Abstract translation: 公开了一种电容器结构。 电容器结构至少包括一个D1 +一级阵列。 D1 +第一级阵列包括三个第一D1 +导电片和第二D1 +导电片。 第一D1 +导电片中的两个被布置在D1 +第一电平阵列的第一行中，并且剩余的第一D1 +导电片和第二D1 +导电片从左至右布置在D1 +第一电平阵列的第二行中 对。 相邻的第一D1 +导电片彼此连接，并且第一D1 +导电片不连接到第二D1 +导电片。

公开(公告)号：US08111544B2

公开(公告)日：2012-02-07

申请号：US12617982

申请日：2009-11-13

Applicant: Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

Inventor： Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

IPC: G11C11/00

CPC classification number: G11C11/1677 ,  G11C11/1675

Abstract: A method of writing a magneto-resistive random access memory (MRAM) cell includes providing a writing pulse to write a value to the MRAM cell; and verifying a status of the MRAM cell immediately after the step of providing the first writing pulse. In the event of a write failure, the value is rewritten into the MRAM cell.

Abstract translation: 写入磁阻随机存取存储器（MRAM）单元的方法包括提供写入脉冲以将值写入MRAM单元; 以及在提供第一写入脉冲的步骤之后立即验证MRAM单元的状态。 在写入失败的情况下，该值被重写到MRAM单元中。