摘要:
Compounds having the Formula (I), including pharmaceutically acceptable salts thereof, wherein at least one of X1, X2 or X3 is and any remaining X1, X2 or X3 is hydrogen, which are useful as kinase inhibitors, wherein R1, R2, R3, R4, R5, R6, A1, A2 and m are as described herein.
摘要:
Compounds having the Formula (I), including pharmaceutically acceptable salts thereof wherein at least one of X1, X2 or X3 is and any remaining X1, X2 or X3 is hydrogen, which are useful as kinase inhibitors, wherein R1, R2, R3, R4, R5, R6, A1, A2 and m are as described herein.
摘要:
Interface mechanism for quickly accessing recently used artifacts in a computer desktop environment. The interface mechanism integrates across a multitude of tools available in a computer desktop environment to present a list of recently used computer artifacts that can be automatically sorted or filtered in useful ways. Examples of computer-based artifacts that the interface can present include objects that relate to people, events, URLs, email messages, attachments, shared objects or shared activities. Filtering and sorting operations enable the interface mechanism to provide a list of the computer artifacts in a manner that is useful to the user. Also, the interface mechanism permits to perform frequently desired operations beyond opening a file or application such as dragging and dropping items for copying and pasting into the user's current context.
摘要:
The present invention relates to compounds having the formula, wherein, Q is optionally substituted aryl or heteroaryl, R1 is hydrogen or C1-4alkyl, and R2, R3, R4 and R5 are hydrogen or optional substituents as defined in the specification.
摘要翻译:本发明涉及具有下式的化合物,其中Q为任选取代的芳基或杂芳基,R 1为氢或C 1-4烷基,R 1为氢或C 1-4烷基, R 2,R 3,R 4和R 5是氢或说明书中定义的任选的取代基。
摘要:
A midsole for footwear includes at least one solid or hollow cushioning tube positioned therein for improving the cushioning of the midsole. Preferably, the midsole includes a plurality of cushioning tubes fabricated of an elastomeric material. The tubes may vary in diameter and/or wall thickness relative to one another for varying the cushioning and stability characteristics of the system. Each tube may also vary in diameter and/or wall thickness along its length.
摘要:
The present invention relates to compounds having the formula, wherein, Q is optionally substituted aryl or heteroaryl, R1 is hydrogen or C1-4alkyl, and R2, R3, R4 and R5 are hydrogen or optional substituents as defined in the specification.
摘要翻译:本发明涉及具有下式的化合物,其中Q为任选取代的芳基或杂芳基,R 1为氢或C 1-4烷基,R 1为氢或C 1-4烷基, R 2,R 3,R 4和R 5是氢或说明书中定义的任选的取代基。
摘要:
The invention provides microelectronic devices such as integrated circuit devices. Such have vias, interconnect metallization and wiring lines using dissimilar low dielectric constant intermetal dielectrics. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. A microelectronic device is formed having a substrate and a layer of a first dielectric material positioned on the substrate. A layer of a second dielectric material is positioned on the first dielectric layer and an additional layer of the first dielectric material positioned on the second dielectric material. At least one via extends through the first dielectric material layer and the second dielectric material layer, and at least one trench extends through the additional layer of the first dielectric material to the via. A lining of a barrier metal is formed on inside walls and a floor of the trench and on inside walls and a floor the via. A fill metal fills the trench and via in contact with the lining of the barrier metal.
摘要:
The invention provides process for producing microelectronic devices such as integrated circuit devices. Such have vias, interconnect metallization and wiring lines using dissimilar low dielectric constant intermetal dielectrics. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. A microelectronic device is formed having a substrate and a layer of a first dielectric material positioned on the substrate. A layer of a second dielectric material is positioned on the first dielectric layer. Either a sacrificial metal layer or and an additional layer the first dielectric material is positioned on the second dielectric material. At least one via extends through the first dielectric material layer and at least one trench extends through the additional layer of the first dielectric material and the second dielectric material layer to the via. A lining of a barrier metal is formed on inside walls and a floor of the trench and on inside walls and a floor the via. A fill metal fills the trench and via in contact with the lining of the barrier metal.
摘要:
A female computer connector includes a flat insert connected to a housing to hold a set of receptacles therein and molded with an outer shell through the process of injection molding, wherein the housing has elongated ribs inserted into gaps on a front edge of the flat insert to separate the receptacles; the receptacles each has two projections respectively hooked in two spaced recessed retaining surface portions on a respective channel on the flat insert for positioning, and a rear end formed into two side wings pinched to bind up a respective conductor.