Method for achieving a durable two-tone finish on a vehicle
    61.
    发明申请
    Method for achieving a durable two-tone finish on a vehicle 有权
    在车辆上实现持久双色调的方法

    公开(公告)号:US20060045965A1

    公开(公告)日:2006-03-02

    申请号:US10929238

    申请日:2004-08-30

    申请人: Jun Lin

    发明人: Jun Lin

    IPC分类号: B05D5/06

    摘要: A method for producing a multilayer two-tone finish on a substrate, such as automobile and truck bodies or parts thereof, by applying an improved clearcoat composition as the exterior most coating on top of the accent color and main body color basecoats. The clearcoat composition has improved compatibility over both waterborne and solventborne basecoats. The composition includes a film-forming binder comprising a carbamate material, a curing agent, typically a monomeric melamine curing agent, and a hydroxy functional silane component. When used as a clearcoat over a standard pigmented basecoat, the resulting coating provides a substantially durable and wrinkle free appearance and excellent adhesion to waterborne and solventborne basecoats, baked or unbaked.

    摘要翻译: 通过将改良的透明涂料组合物作为重要颜色和主体颜色底涂层之上的外部涂层组合物,在诸如汽车和卡车车身或其部件的基材上生产多层双色调整方法。 透明涂料组合物具有改善的水性和溶剂型底漆的相容性。 组合物包括含有氨基甲酸酯材料,固化剂,通常为单体三聚氰胺固化剂和羟基官能的硅烷组分的成膜粘合剂。 当用作标准着色底漆时的透明涂层时,所得涂层提供基本上耐用且无皱纹的外观和对水性和溶剂型底漆具有优异的粘合性,烘烤或未烘烤。

    Feeding box for small animal
    64.
    发明申请
    Feeding box for small animal 审中-公开
    小动物饲养箱

    公开(公告)号:US20050045111A1

    公开(公告)日:2005-03-03

    申请号:US10651952

    申请日:2003-09-02

    申请人: Jun Lin

    发明人: Jun Lin

    摘要: A structure of a feeding box for animals, wherein the box is provided with a rear section having an elongated hanging lug for mounting closely onto the bottom edge at the lower opening of a casing for keeping small animals and the inner side of the body is alternately arranged with a plurality of horizontal and vertical partition boards to form a slot for holding feeds or water, or a plurality of small cavities.

    摘要翻译: 一种用于动物的饲养箱的结构,其中所述盒设置有后部,所述后部具有细长的悬挂凸耳,用于紧紧地安装在用于保持小动物的壳体的下部开口处的底部边缘上,并且所述身体的内侧交替 布置有多个水平和垂直隔板以形成用于保持进料或水的槽或多个小空腔。

    Semiconductor device and its manufacture
    65.
    发明授权
    Semiconductor device and its manufacture 有权
    半导体器件及其制造

    公开(公告)号:US06835976B2

    公开(公告)日:2004-12-28

    申请号:US10457535

    申请日:2003-06-10

    IPC分类号: H01L27108

    摘要: A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO2 mask layer thoreon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.

    摘要翻译: 制造半导体器件的方法具有以下步骤:(a)在半导体衬底上形成由稀有金属制成的下电极; (b)在下电极上沉积由高介电材料或铁电氧化物制成的电容器电介质膜; (c)在电容器电介质膜上形成层压层,所述层叠层包括由稀有金属制成的上电极层和具有或不具有SiO 2掩模层的粘合剂层; (d)图案化层叠层; (e)化学处理图案化的层压层以去除层压层的表面层; 和(f)在半导体衬底上形成层间绝缘膜,覆盖化学处理层压层。 可以增加稀土金属层与绝缘层之间的粘附力。

    Capacitor
    66.
    发明授权
    Capacitor 有权
    电容器

    公开(公告)号:US06690054B2

    公开(公告)日:2004-02-10

    申请号:US10173596

    申请日:2002-06-19

    IPC分类号: H01L27108

    摘要: A method for fabricating a capacitor comprises the steps of: forming a lower electrode of a metal over a substrate; forming a capacitor dielectric film of an oxide dielectric film on the lower electrode; depositing a metal film on the capacitor dielectric film; performing a thermal processing in a hydrogen-content atmosphere after the step of depositing the metal film; and patterning the metal film to form an upper electrode of the metal film after the step of performing the thermal processing. Thus, the adhesion between the upper electrode and the capacitor dielectric film is improved, and capacitor characteristics can be improved.

    摘要翻译: 制造电容器的方法包括以下步骤:在衬底上形成金属的下电极; 在下电极上形成氧化物电介质膜的电容器电介质膜; 在电容器电介质膜上沉积金属膜; 在沉积金属膜的步骤之后,在含氢气氛中进行热处理; 以及在进行热处理的步骤之后图案化金属膜以形成金属膜的上电极。 因此,改善了上电极和电容器电介质膜之间的粘附性,并且可以提高电容器特性。

    Semiconductor device having a high-dielectric capacitor
    67.
    发明授权
    Semiconductor device having a high-dielectric capacitor 有权
    具有高介电电容器的半导体器件

    公开(公告)号:US06610579B2

    公开(公告)日:2003-08-26

    申请号:US09842229

    申请日:2001-04-26

    IPC分类号: H01L2120

    CPC分类号: H01L28/60 H01L21/31604

    摘要: A high-dielectric capacitor is formed by using a Ru lower electrode having a (002)-oriented principal surface, by depositing thereon a Ta2O5 film such that the Ta2O5 film has a (100)-principal surface.

    摘要翻译: 通过使用具有(002)取向主表面的Ru下电极,通过在其上沉积Ta 2 O 5膜使得Ta 2 O 5膜具有(100) - 主表面而形成高介电电容器。

    Semiconductor device and its manufacture
    68.
    发明授权
    Semiconductor device and its manufacture 有权
    半导体器件及其制造

    公开(公告)号:US06602756B2

    公开(公告)日:2003-08-05

    申请号:US09735477

    申请日:2000-12-14

    IPC分类号: H01L2120

    摘要: A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO2 mask layer thereon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.

    摘要翻译: 制造半导体器件的方法具有以下步骤:(a)在半导体衬底上形成由稀有金属制成的下电极; (b)在下电极上沉积由高介电材料或铁电氧化物制成的电容器电介质膜; (c)在电容器电介质膜上形成叠层,层叠层包括由稀有金属制成的上电极层和其上具有或不具有SiO 2掩模层的粘合剂层; (d)图案化层叠层; (e)化学处理图案化的层压层以去除层压层的表面层; 和(f)在半导体衬底上形成层间绝缘膜,覆盖化学处理层压层。 可以增加稀土金属层与绝缘层之间的粘附力。

    Method of manufacturing semiconductor device
    69.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US06593180B1

    公开(公告)日:2003-07-15

    申请号:US09708044

    申请日:2000-11-08

    IPC分类号: H01L218242

    摘要: A method of manufacturing semiconductor device comprises the step of forming the transistor in the semiconductor substrate, the step of forming the capacitor conducting to the transistor, and the step of forming the insulating film to cover the transistor and the capacitor; and the step of sintering the semiconductor substrate in an atmosphere including the mixture of hydrogen, nitrogen and oxygen gases.

    摘要翻译: 制造半导体器件的方法包括在半导体衬底中形成晶体管的步骤,形成对晶体管导通的电容器的步骤以及形成绝缘膜以覆盖晶体管和电容器的步骤; 以及在包括氢,氮和氧气的混合气体的气氛中烧结半导体衬底的步骤。

    Semiconductor device having a high-dielectric capacitor
    70.
    发明授权
    Semiconductor device having a high-dielectric capacitor 有权
    具有高介电电容器的半导体器件

    公开(公告)号:US06249040B1

    公开(公告)日:2001-06-19

    申请号:US09450509

    申请日:1999-11-30

    IPC分类号: H01L2900

    CPC分类号: H01L28/60 H01L21/31604

    摘要: A high-dielectric capacitor is formed by using a Ru lower electrode having a (002)-oriented principal surface, by depositing thereon a Ta2O5 film such that the Ta2O5 film has a (100)-principal surface.

    摘要翻译: 通过使用具有(002)取向主表面的Ru下电极,通过在其上沉积Ta 2 O 5膜使得Ta 2 O 5膜具有(100) - 主表面而形成高介电电容器。