摘要:
A method for producing a multilayer two-tone finish on a substrate, such as automobile and truck bodies or parts thereof, by applying an improved clearcoat composition as the exterior most coating on top of the accent color and main body color basecoats. The clearcoat composition has improved compatibility over both waterborne and solventborne basecoats. The composition includes a film-forming binder comprising a carbamate material, a curing agent, typically a monomeric melamine curing agent, and a hydroxy functional silane component. When used as a clearcoat over a standard pigmented basecoat, the resulting coating provides a substantially durable and wrinkle free appearance and excellent adhesion to waterborne and solventborne basecoats, baked or unbaked.
摘要:
A method for adhering windshield sealants directly over a basecoat/clearcoat finish in which the clearcoat comprises a carbamate polymer or oligomer.
摘要:
A film-forming coating composition, typically a topcoat, having improved adhesion. The composition includes a film-forming binder comprising a carbamate material, a curing agent, typically a melamine curing agent, and a hydroxy functional silane component. When used as a clearcoat over a standard pigmented basecoat, the resulting coating provides excellent adhesion to both windshield sealants and additional repair coatings.
摘要:
A structure of a feeding box for animals, wherein the box is provided with a rear section having an elongated hanging lug for mounting closely onto the bottom edge at the lower opening of a casing for keeping small animals and the inner side of the body is alternately arranged with a plurality of horizontal and vertical partition boards to form a slot for holding feeds or water, or a plurality of small cavities.
摘要:
A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO2 mask layer thoreon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.
摘要:
A method for fabricating a capacitor comprises the steps of: forming a lower electrode of a metal over a substrate; forming a capacitor dielectric film of an oxide dielectric film on the lower electrode; depositing a metal film on the capacitor dielectric film; performing a thermal processing in a hydrogen-content atmosphere after the step of depositing the metal film; and patterning the metal film to form an upper electrode of the metal film after the step of performing the thermal processing. Thus, the adhesion between the upper electrode and the capacitor dielectric film is improved, and capacitor characteristics can be improved.
摘要:
A high-dielectric capacitor is formed by using a Ru lower electrode having a (002)-oriented principal surface, by depositing thereon a Ta2O5 film such that the Ta2O5 film has a (100)-principal surface.
摘要翻译:通过使用具有(002)取向主表面的Ru下电极,通过在其上沉积Ta 2 O 5膜使得Ta 2 O 5膜具有(100) - 主表面而形成高介电电容器。
摘要:
A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO2 mask layer thereon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.
摘要:
A method of manufacturing semiconductor device comprises the step of forming the transistor in the semiconductor substrate, the step of forming the capacitor conducting to the transistor, and the step of forming the insulating film to cover the transistor and the capacitor; and the step of sintering the semiconductor substrate in an atmosphere including the mixture of hydrogen, nitrogen and oxygen gases.
摘要:
A high-dielectric capacitor is formed by using a Ru lower electrode having a (002)-oriented principal surface, by depositing thereon a Ta2O5 film such that the Ta2O5 film has a (100)-principal surface.
摘要翻译:通过使用具有(002)取向主表面的Ru下电极,通过在其上沉积Ta 2 O 5膜使得Ta 2 O 5膜具有(100) - 主表面而形成高介电电容器。