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    Capacitor
    1.
    发明授权
    Capacitor 有权
    电容器

    公开(公告)号：US06690054B2

    公开(公告)日：2004-02-10

    申请号：US10173596

    申请日：2002-06-19

    申请人： Jun Lin ,  Chung-Ming Chu ,  Toshiya Suzuki ,  Katsuhiko Hieda

    发明人： Jun Lin ,  Chung-Ming Chu ,  Toshiya Suzuki ,  Katsuhiko Hieda

    IPC分类号： H01L27108

    CPC分类号： H01L28/60 ,  H01L27/10814 ,  H01L27/10882 ,  H01L27/10894 ,  H01L28/91

    摘要： A method for fabricating a capacitor comprises the steps of: forming a lower electrode of a metal over a substrate; forming a capacitor dielectric film of an oxide dielectric film on the lower electrode; depositing a metal film on the capacitor dielectric film; performing a thermal processing in a hydrogen-content atmosphere after the step of depositing the metal film; and patterning the metal film to form an upper electrode of the metal film after the step of performing the thermal processing. Thus, the adhesion between the upper electrode and the capacitor dielectric film is improved, and capacitor characteristics can be improved.

    摘要翻译： 制造电容器的方法包括以下步骤：在衬底上形成金属的下电极; 在下电极上形成氧化物电介质膜的电容器电介质膜; 在电容器电介质膜上沉积金属膜; 在沉积金属膜的步骤之后，在含氢气氛中进行热处理; 以及在进行热处理的步骤之后图案化金属膜以形成金属膜的上电极。 因此，改善了上电极和电容器电介质膜之间的粘附性，并且可以提高电容器特性。

    Capacitor
    2.
    发明授权
    Capacitor 有权
    电容器

    公开(公告)号：US06924193B2

    公开(公告)日：2005-08-02

    申请号：US10705889

    申请日：2003-11-13

    申请人： Jun Lin ,  Chung-Ming Chu ,  Toshiya Suzuki ,  Katsuhiko Hieda

    发明人： Jun Lin ,  Chung-Ming Chu ,  Toshiya Suzuki ,  Katsuhiko Hieda

    IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/105 ,  H01L27/108

    CPC分类号： H01L28/60 ,  H01L27/10814 ,  H01L27/10882 ,  H01L27/10894 ,  H01L28/91

    摘要： A method for fabricating a capacitor comprises the steps of: forming a lower electrode of a metal over a substrate; forming a capacitor dielectric film of an oxide dielectric film on the lower electrode; depositing a metal film on the capacitor dielectric film; performing a thermal processing in a hydrogen-content atmosphere after the step of depositing the metal film; and patterning the metal film to form an upper electrode of the metal film after the step of performing the thermal processing. Thus, the adhesion between the upper electrode and the capacitor dielectric film is improved, and capacitor characteristics can be improved.

    摘要翻译： 制造电容器的方法包括以下步骤：在衬底上形成金属的下电极; 在下电极上形成氧化物电介质膜的电容器电介质膜; 在电容器电介质膜上沉积金属膜; 在沉积金属膜的步骤之后在氢含量气氛中进行热处理; 以及在进行热处理的步骤之后图案化金属膜以形成金属膜的上电极。 因此，改善了上电极和电容器电介质膜之间的粘附性，并且可以提高电容器特性。

    Semiconductor device with transistor and capacitor and its manufacture method
    3.
    发明授权
    Semiconductor device with transistor and capacitor and its manufacture method 有权
    具有晶体管和电容器的半导体器件及其制造方法

    公开(公告)号：US07112839B2

    公开(公告)日：2006-09-26

    申请号：US10845153

    申请日：2004-05-14

    申请人： Jun Lin ,  Toshiya Suzuki ,  Katsuhiko Hieda

    发明人： Jun Lin ,  Toshiya Suzuki ,  Katsuhiko Hieda

    IPC分类号： H01L27/108

    CPC分类号： H01L27/10852 ,  H01L21/31604 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/90

    摘要： On a semiconductor substrate, a transistor and a capacitor electrically connected to the transistor are formed, the capacitor having two electrodes made of metal and a capacitor dielectric layer between the two electrodes made of oxide dielectric material. A temporary protective film is formed over the capacitor, the temporary protective film covering the capacitor. The semiconductor substrate with the temporary protective film is subjected to a heat treatment in a reducing atmosphere. The temporary protective film is removed. The semiconductor substrate with the temporary protective film removed is subjected to a heat treatment in an inert gas atmosphere or in a vacuum state. A protective film is formed over the capacitor, the protective film covering the capacitor. With these processes, leak current of the capacitor can be reduced.

    摘要翻译： 在半导体衬底上，形成与晶体管电连接的晶体管和电容器，该电容器具有由金属制成的两个电极和由氧化物介电材料制成的两个电极之间的电容器电介质层。 在电容器上形成临时保护膜，临时保护膜覆盖电容器。 具有临时保护膜的半导体衬底在还原气氛中进行热处理。 移除临时保护膜。 将除去了临时保护膜的半导体基板在惰性气体气氛或真空状态下进行热处理。 在电容器上形成保护膜，保护膜覆盖电容器。 通过这些处理，可以减小电容器的漏电流。

    Semiconductor device with transistor and capacitor and its manufacture method
    4.
    发明授权
    Semiconductor device with transistor and capacitor and its manufacture method 有权
    具有晶体管和电容器的半导体器件及其制造方法

    公开(公告)号：US06849894B2

    公开(公告)日：2005-02-01

    申请号：US10317063

    申请日：2002-12-12

    申请人： Jun Lin ,  Toshiya Suzuki ,  Katsuhiko Hieda

    发明人： Jun Lin ,  Toshiya Suzuki ,  Katsuhiko Hieda

    IPC分类号： H01L21/322 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/94

    CPC分类号： H01L27/10852 ,  H01L21/31604 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/55 ,  H01L28/90

    摘要： On a semiconductor substrate, a transistor and a capacitor electrically connected to the transistor are formed, the capacitor having two electrodes made of metal and a capacitor dielectric layer between the two electrodes made of oxide dielectric material. A temporary protective film is formed over the capacitor, the temporary protective film covering the capacitor. The semiconductor substrate with the temporary protective film is subjected to a heat treatment in a reducing atmosphere. The temporary protective film is removed. The semiconductor substrate with the temporary protective film removed is subjected to a heat treatment in an inert gas atmosphere or in a vacuum state. A protective film is formed over the capacitor, the protective film covering the capacitor. With these processes, leak current of the capacitor can be reduced.

    摘要翻译： 在半导体衬底上，形成与晶体管电连接的晶体管和电容器，该电容器具有由金属制成的两个电极和由氧化物介电材料制成的两个电极之间的电容器电介质层。 在电容器上形成临时保护膜，临时保护膜覆盖电容器。 具有临时保护膜的半导体衬底在还原气氛中进行热处理。 移除临时保护膜。 将除去了临时保护膜的半导体基板在惰性气体气氛或真空状态下进行热处理。 在电容器上形成保护膜，保护膜覆盖电容器。 通过这些处理，可以减小电容器的漏电流。

    Semiconductor device and its manufacture
    5.
    发明授权
    Semiconductor device and its manufacture 有权
    半导体器件及其制造

    公开(公告)号：US06835976B2

    公开(公告)日：2004-12-28

    申请号：US10457535

    申请日：2003-06-10

    申请人： Jun Lin ,  Hiroshi Minakata ,  Akihiro Shimada ,  Toshiya Suzuki ,  Daisuke Matsunaga

    发明人： Jun Lin ,  Hiroshi Minakata ,  Akihiro Shimada ,  Toshiya Suzuki ,  Daisuke Matsunaga

    IPC分类号： H01L27108

    CPC分类号： H01L28/91 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/60

    摘要： A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO2 mask layer thoreon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.

    摘要翻译： 制造半导体器件的方法具有以下步骤：（a）在半导体衬底上形成由稀有金属制成的下电极; （b）在下电极上沉积由高介电材料或铁电氧化物制成的电容器电介质膜; （c）在电容器电介质膜上形成层压层，所述层叠层包括由稀有金属制成的上电极层和具有或不具有SiO 2掩模层的粘合剂层; （d）图案化层叠层; （e）化学处理图案化的层压层以去除层压层的表面层; 和（f）在半导体衬底上形成层间绝缘膜，覆盖化学处理层压层。 可以增加稀土金属层与绝缘层之间的粘附力。

    Semiconductor device and its manufacture
    6.
    发明授权
    Semiconductor device and its manufacture 有权
    半导体器件及其制造

    公开(公告)号：US06602756B2

    公开(公告)日：2003-08-05

    申请号：US09735477

    申请日：2000-12-14

    申请人： Jun Lin ,  Hiroshi Minakata ,  Akihiro Shimada ,  Toshiya Suzuki ,  Daisuke Matsunaga

    发明人： Jun Lin ,  Hiroshi Minakata ,  Akihiro Shimada ,  Toshiya Suzuki ,  Daisuke Matsunaga

    IPC分类号： H01L2120

    CPC分类号： H01L28/91 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/60

    摘要： A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO2 mask layer thereon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.

    摘要翻译： 制造半导体器件的方法具有以下步骤：（a）在半导体衬底上形成由稀有金属制成的下电极; （b）在下电极上沉积由高介电材料或铁电氧化物制成的电容器电介质膜; （c）在电容器电介质膜上形成叠层，层叠层包括由稀有金属制成的上电极层和其上具有或不具有SiO 2掩模层的粘合剂层; （d）图案化层叠层; （e）化学处理图案化的层压层以去除层压层的表面层; 和（f）在半导体衬底上形成层间绝缘膜，覆盖化学处理层压层。 可以增加稀土金属层与绝缘层之间的粘附力。

    Method and system for transmitting 3D picture in multimedia message service message
    8.
    发明申请
    Method and system for transmitting 3D picture in multimedia message service message 审中-公开
    用于在多媒体消息服务消息中传输3D图像的方法和系统

    公开(公告)号：US20140375765A1

    公开(公告)日：2014-12-25

    申请号：US14344940

    申请日：2011-11-01

    申请人： Wen Fang ,  Yongqi Li ,  Jun Lin

    发明人： Wen Fang ,  Yongqi Li ,  Jun Lin

    IPC分类号： H04W4/12 ,  H04N13/00

    CPC分类号： H04W4/12 ,  H04N13/178 ,  H04N13/194 ,  H04N21/235 ,  H04N21/431 ,  H04N21/435 ,  H04N21/4786 ,  H04N21/8153 ,  H04N21/8543

    摘要： A method for transmitting a three-dimensional (3D) picture in an MMS message is disclosed. The method includes: in a Synchronized Multimedia Integration Language (SMIL) file, a sender assigns a same Identifier (ID) for two different pictures, sets an attribute of each of the two pictures as a 3D display picture, and sends the two pictures to a receiver; or, a sender synthesizes two different pictures in the SMIL file into a file, assigns an ID for the synthesized file, sets an attribute of the ID as a 3D display picture, and sends the synthesized file to a receiver; and the receiver displays the two pictures in a 3D mode. A system for transmitting a 3D picture in an MMS message is also disclosed. With the technical solution of the disclosure, the problem that transmission of a 3D picture cannot be supported in an existing protocol can be solved.

    摘要翻译： 公开了一种用于在MMS消息中发送三维（3D）图像的方法。 该方法包括：在同步多媒体集成语言（SMIL）文件中，发送者为两个不同的图片分配相同的标识符（ID），将两个图像中的每一个的属性设置为3D显示图像，并将两个图像发送到 接收器 或者，发送者将SMIL文件中的两个不同图片合成为文件，为合成文件分配ID，将ID的属性设置为3D显示图片，并将合成文件发送给接收者; 并且接收器以3D模式显示两张照片。 还公开了一种用于在MMS消息中发送3D图像的系统。 通过本公开的技术方案，可以解决现有协议中不能支持3D图像传输的问题。

    Surface active blocked isocyanates and coating compositions thereof
    9.
    发明授权
    Surface active blocked isocyanates and coating compositions thereof 有权
    表面活性封闭异氰酸酯及其涂料组合物

    公开(公告)号：US08784555B2

    公开(公告)日：2014-07-22

    申请号：US13054828

    申请日：2009-07-23

    申请人： Jun Lin

    发明人： Jun Lin

    IPC分类号： C09D7/00 ,  C07F7/18

    CPC分类号： C09D7/00 ,  C07F7/0838 ,  C07F7/18 ,  C08G77/045 ,  C08G77/26 ,  C09D4/00 ,  C09D183/04 ,  C09J183/04

    摘要： Disclosed herein is a surface active adhesion promoting agent and a coating composition comprising the surface active adhesion promoting agent. The adhesion promoting agent is a blocked isocyanate functional siloxane containing material. Addition of small amount of the adhesion promoting agent to a coating composition, especially clearcoat compositions, helps to provide adhesion to a variety of materials that may be subsequently applied to the coating composition.

    摘要翻译： 本文公开了表面活性粘合促进剂和包含表面活性粘合促进剂的涂料组合物。 粘合促进剂是封端的异氰酸酯官能的含硅氧烷的材料。 向涂料组合物，特别是透明涂料组合物中加入少量的粘合促进剂有助于提供对可随后施用于涂料组合物的各种材料的粘附。

    SELF-ASSEMBLED SILICA CONDENSATES
    10.
    发明申请
    SELF-ASSEMBLED SILICA CONDENSATES 有权
    自组装二氧化硅凝结剂

    公开(公告)号：US20110207852A1

    公开(公告)日：2011-08-25

    申请号：US13126524

    申请日：2009-07-28

    申请人： Jun Lin

    发明人： Jun Lin

    IPC分类号： C09D183/00 ,  C09D163/00 ,  B05D3/02

    CPC分类号： C09D183/04 ,  C08G18/6295 ,  C08G77/14 ,  C08G77/20 ,  C08G77/26 ,  C08K3/36 ,  C08L2312/00 ,  C09D133/04 ,  C09D175/04

    摘要： Self-assembled silica condensates are described as well as their use in coating compositions. The self-assembled silica condensates can be formed from the hydrolysis of medium to long chain trialkoxy silane compounds. Coating compositions containing the self-assembled silica condensates can provide coatings having improved scratch and mar resistance and can have excellent recoat adhesion.

    摘要翻译： 描述了自组装二氧化硅冷凝物以及它们在涂料组合物中的用途。 自组装二氧化硅缩合物可以由中长链三烷氧基硅烷化合物的水解形成。 含有自组装二氧化硅冷凝物的涂料组合物可以提供具有改善的耐划痕性和抗划痕性的涂层，并且可以具有优异的重涂层附着力。