公开(公告)号：US07876535B2

公开(公告)日：2011-01-25

申请号：US12019205

申请日：2008-01-24

申请人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

发明人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive device of a CPP (current perpendicular to plane) structure includes a magnetoresistive unit sandwiched between a first substantially soft magnetic shield layer from below, and a second substantially soft magnetic shield layer from above, with a sense current applied in a stacking direction. The magnetoresistive unit includes a non-magnetic intermediate layer sandwiched between a first ferromagnetic layer, and a second ferromagnetic layer. At least one of the first and second shield layers is configured in a window frame of a planar shape, including a front frame-constituting portion and a back frame-constituting portion partially comprising a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with magnetic flux going all the way around the window framework, turning the magnetization of the front frame-constituting portion into a single domain.

摘要翻译： CPP（电流垂直于平面）结构的磁阻器件包括夹在下面的第一基本上软磁屏蔽层和从上方的第二基本软磁屏蔽层之间的磁阻单元，其中沿堆叠方向施加感测电流。 磁阻单元包括夹在第一铁磁层和第二铁磁层之间的非磁性中间层。 第一屏蔽层和第二屏蔽层中的至少一个被配置在平面形状的窗框中，包括前框架构成部分和后框架构成部分，部分地包括具有偏磁场的非磁性间隙层的组合， 应用层。 非磁性间隙层与偏置磁场施加层的组合形成闭合的磁路，其中磁通量一直围绕窗框架，将前框架构成部分的磁化转变为单个畴。

公开(公告)号：US07826179B2

公开(公告)日：2010-11-02

申请号：US11856438

申请日：2007-09-17

申请人： Koji Shimazawa ,  Tsutomu Chou ,  Yoshihiro Tsuchiya

发明人： Koji Shimazawa ,  Tsutomu Chou ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/39

CPC分类号： G11B5/3967 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3912 ,  H01F10/325

摘要： The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, comprising a magneto-resistive effect unit, and an upper shield layer and a lower shield layer located with that magneto-resistive effect unit sandwiched between them, with a sense current applied in a stacking direction, wherein the magneto-resistive effect unit comprises a nonmagnetic metal intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with that nonmagnetic metal intermediate layer sandwiched between them, wherein the first ferromagnetic layer and said second ferromagnetic layer are exchange coupled via the nonmagnetic metal intermediate layer such that where there is no bias magnetic field applied as yet, their magnetizations are anti-parallel with each other, and at least one of the upper shield layer and the lower shield layer has an inclined magnetization structure with its magnetization inclining with respect to a track width direction, so that by the magnetization of that inclined magnetization structure, a bias magnetic field can be applied to the first ferromagnetic layer and the second ferromagnetic layer. It is thus possible to obtain a magneto-resistive effect device of improved reliability that enables a structure capable of having a narrowed read gap (the gap between the upper shield and the lower shield) to be adopted to meet the recently demanded ultra-high recording density, allows a stable bias magnetic field to be applied in simple structure, and obtain a stable magneto-resistive effect change.

摘要翻译： 本发明提供了CPP（电流垂直于平面）结构的磁阻效应器件，包括磁阻效应单元，以及位于它们之间的该磁阻效应单元的上屏蔽层和下屏蔽层， 其中感应电流沿堆叠方向施加，其中所述磁阻效应单元包括非磁性金属中间层，以及与夹在其间的非磁性金属中间层堆叠并形成的第一铁磁层和第二铁磁层，其中所述第一 铁磁层和所述第二铁磁层经由非磁性金属中间层交换耦合，使得在没有施加偏压磁场的情况下，它们的磁化彼此反平行，并且上屏蔽层和 下屏蔽层具有相对于其磁化倾斜的倾斜磁化结构 轨道宽度方向，使得通过该倾斜磁化结构的磁化，可以将偏置磁场施加到第一铁磁层和第二铁磁层。 因此，可以获得具有改善的可靠性的磁阻效应装置，使得能够采用能够具有窄的读取间隙（上屏蔽和下屏蔽之间的间隙）的结构来满足最近要求的超高记录 密度，允许以简单的结构施加稳定的偏置磁场，并获得稳定的磁阻效应变化。

公开(公告)号：US20100079917A1

公开(公告)日：2010-04-01

申请号：US12285069

申请日：2008-09-29

申请人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

发明人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A first shield portion located below an MR stack includes a first main shield layer, a first antiferromagnetic layer, and a first magnetization controlling layer including a first ferromagnetic layer exchange-coupled to the first antiferromagnetic layer. A second shield portion located on the MR stack includes a second main shield layer, a second antiferromagnetic layer, and a second magnetization controlling layer including a second ferromagnetic layer exchange-coupled to the second antiferromagnetic layer. The MR stack includes two free layers magnetically coupled to the two magnetization controlling layers. Only one of the two magnetization controlling layers includes a third ferromagnetic layer that is antiferromagnetically exchange-coupled to the first or second ferromagnetic layer through a nonmagnetic middle layer. The first shield portion includes an underlayer disposed on the first main shield layer, and the first antiferromagnetic layer is disposed on the underlayer.

摘要翻译： 位于MR堆叠下方的第一屏蔽部分包括第一主屏蔽层，第一反铁磁层和包括与第一反铁磁层交换耦合的第一铁磁层的第一磁化控制层。 位于MR堆叠上的第二屏蔽部分包括第二主屏蔽层，第二反铁磁层和包括交换耦合到第二反铁磁层的第二铁磁层的第二磁化控制层。 MR堆叠包括磁耦合到两个磁化控制层的两个自由层。 两个磁化控制层中的仅一个包括通过非磁性中间层反铁磁交换耦合到第一或第二铁磁层的第三铁磁层。 第一屏蔽部分包括设置在第一主屏蔽层上的底层，并且第一反铁磁层设置在底层上。

公开(公告)号：US20100053820A1

公开(公告)日：2010-03-04

申请号：US12230604

申请日：2008-09-02

申请人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

发明人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3286

摘要： A magnetoresistive element includes first and second shield layers, an MR stack disposed therebetween, a first hard magnetic layer for setting the magnetization direction of the first shield layer, and a second hard magnetic layer for setting the magnetization direction of the second shield layer. The MR stack includes a first ferromagnetic layer magnetically coupled to the first shield layer, a second ferromagnetic layer magnetically coupled to the second shield layer, and a spacer layer between the first and second ferromagnetic layers. The first and second ferromagnetic layers have magnetizations that are in antiparallel directions when any external magnetic field other than a magnetic field resulting from the first and second hard magnetic layers is not applied to the two ferromagnetic layers, and that change their directions in response to an external magnetic field other than the magnetic field resulting from the first and second hard magnetic layers.

摘要翻译： 磁阻元件包括第一和第二屏蔽层，设置在其间的MR堆叠，用于设定第一屏蔽层的磁化方向的第一硬磁性层和用于设定第二屏蔽层的磁化方向的第二硬磁性层。 MR堆叠包括磁耦合到第一屏蔽层的第一铁磁层，与第二屏蔽层磁耦合的第二铁磁层，以及在第一和第二铁磁层之间的间隔层。 当由第一和第二硬磁性层产生的磁场以外的任何外部磁场不施加到两个铁磁层时，第一和第二铁磁层具有处于反平行方向的磁化，并且响应于 除了由第一和第二硬磁性层产生的磁场以外的外部磁场。

公开(公告)号：US20090201612A1

公开(公告)日：2009-08-13

申请号：US12028243

申请日：2008-02-08

申请人： Koji SHIMAZAWA ,  Tsutomu Chou ,  Daisuke Miyauchi

发明人： Koji SHIMAZAWA ,  Tsutomu Chou ,  Daisuke Miyauchi

IPC分类号： G11B5/33 ,  H01L43/08

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B5/398 ,  G11B2005/3996 ,  H01L43/08

摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer which are located and formed such that the magnetoresistive unit is sandwiched between them from above and below, with a sense current applied in the stacking direction, wherein said magnetoresistive unit comprises a non-magnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them.

摘要翻译： 本发明提供了CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及第一屏蔽层和第二屏蔽层，它们被定位和形成，使得磁阻单元从上方和下方夹在它们之间 ，其中所述磁阻单元包括非磁性中间层，并且堆叠并形成第一铁磁层和第二铁磁层，使得所述非磁性中间层夹在它们之间。

公开(公告)号：US08305849B2

公开(公告)日：2012-11-06

申请号：US13013025

申请日：2011-01-25

申请人： Shinji Hara ,  Tsutomu Chou ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Kosuke Tanaka

发明人： Shinji Hara ,  Tsutomu Chou ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Kosuke Tanaka

IPC分类号： G11B11/00

CPC分类号： G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

摘要： A thermally-assisted magnetic head that includes an air bearing surface facing a recording medium and that performs magnetic recording while heating the recording medium includes: a magnetic recording element including a pole of which one edge part is positioned on the air bearing surface and that generates magnetic flux traveling toward the magnetic recording medium; a waveguide configured with a core through which light propagates and a cladding, at least one part of which extends to the air bearing surface, surrounding the periphery of the core; a plasmon generator that faces a part of the core and that extends to the air bearing surface. The plasmon generator is configured with a first part and a second part that are joined; the first part that is positioned on the air bearing surface side and that is made of a high melting point material, and the second part that is positioned away from the air bearing surface and that is made of a material with a small value ∈″, which is an imaginary component of permittivity.

摘要翻译： 一种热辅助磁头，其包括面向记录介质的空气轴承表面并且在加热记录介质的同时进行磁记录的磁辅助磁头包括：磁记录元件，其包括：一个边缘部分位于空气轴承表面上并产生 向磁记录介质传播的磁通量; 配置有光传播的芯的波导和包围，其至少一部分延伸到空气支承表面，围绕芯的周边; 等离子体发生器，其面向芯部的一部分并且延伸到空气轴承表面。 等离子体发生器配置有连接的第一部分和第二部分; 位于空气轴承面侧并由高熔点材料制成的第一部分和远离空气轴承表面并由具有小值∈“的材料制成的第二部分， 这是介电常数的虚部。

公开(公告)号：US08094420B2

公开(公告)日：2012-01-10

申请号：US12126567

申请日：2008-05-23

申请人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

发明人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

摘要： The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer sandwiched between ferromagnetic layers. A planar framework positions the soft magnetic shield layers and comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer constructed by repeating the stacking of a multilayer unit comprising a nonmagnetic underlay layer and a high coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently directed along a closed magnetic path around the framework to form a single domain of magnetization.

摘要翻译： 本发明提供了一种CCP（电流垂直于平面）结构的磁阻器件，其包括夹在软磁屏蔽层之间的磁阻单元，其中沿着层叠方向施加电流。 磁阻单元包括夹在铁磁层之间的非磁性中间层。 平面框架定位软磁屏蔽层，并且包括非磁性间隙层与通过重复堆叠包括非磁性底层和高矫顽材料层的多层单元构成的偏置磁场施加层的组合。 非磁性间隙层被设计和定位成使得从偏置磁场施加层给出的磁通量有效地沿着围绕框架的闭合磁路引导以形成单个磁化域。

公开(公告)号：US08085512B2

公开(公告)日：2011-12-27

申请号：US12045927

申请日：2008-03-11

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Koji Shimazawa ,  Tsutomu Chou

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Koji Shimazawa ,  Tsutomu Chou

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions depend upon an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer sandwiched between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer sandwiched between the second magnetic layer and the third magnetic layer, wherein the stack is adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack.

摘要翻译： 磁场检测元件包括：堆叠，其包括其磁化方向取决于外部磁场的第一，第二和第三磁性层，第二磁性层位于第一磁性层和第三磁性层之间，第一非磁性层 夹在第一磁性层和第二磁性层之间的中间层和夹在第二磁性层和第三磁性层之间的第二非磁性中间层，其中该堆叠适于使得感测电流沿垂直的方向流动 到其膜表面; 以及偏置磁性层，其设置在所述堆叠的一侧，所述侧面与所述堆叠的空气支承表面相对。

公开(公告)号：US08023230B2

公开(公告)日：2011-09-20

申请号：US12289401

申请日：2008-10-27

申请人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

发明人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

摘要： A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.

摘要翻译： 磁阻元件包括一对屏蔽部分，以及设置在该对屏蔽部分之间的MR堆叠和偏置磁场施加层。 屏蔽部分别包括单个磁畴部分。 MR堆叠包括磁耦合到该对单个磁畴部分的一对铁磁层，以及设置在该对铁磁层之间的间隔层。 MR堆叠具有前端面，后端面和两个侧面。 磁阻元件还包括设置在一对单磁畴部分之间并且分别邻近MR堆叠的两个侧表面的两个磁通引导层。 两个磁通导向层中的每一个具有前端面和后端面。 偏置磁场施加层具有面向MR堆叠的后端面的前端面和两个导流层的各个后端面。

公开(公告)号：US20100097722A1

公开(公告)日：2010-04-22

申请号：US12255105

申请日：2008-10-21

申请人： Tsutomu Chou ,  Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Hironobu Matsuzawa

发明人： Tsutomu Chou ,  Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Hironobu Matsuzawa

IPC分类号： G11B5/48 ,  G11B5/33

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3254 ,  H01L43/10

摘要： The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR.

摘要翻译： 在本发明的巨磁阻器件（CPP-GMR器件）中形成间隔层的一部分的半导体氧化物层由纤锌矿结构的氧化锌组成，该氧化锌掺杂有由至少一种选自以下的金属元素所赋予的掺杂剂： 的Zn，Ge，V和Cr的含量为0.05〜0.90原子％：具有获得更高MR比可以实现的优点，同时阻止面积电阻率AR的增加。