公开(公告)号：US20120188859A1

公开(公告)日：2012-07-26

申请号：US13013025

申请日：2011-01-25

申请人： Shinji HARA ,  Tsutomu Chou ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Kosuke Tanaka

发明人： Shinji HARA ,  Tsutomu Chou ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Kosuke Tanaka

IPC分类号： G11B13/04 ,  G11B13/08

CPC分类号： G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

摘要： A thermally-assisted magnetic head that includes an air bearing surface facing a recording medium and that performs magnetic recording while heating the recording medium includes: a magnetic recording element including a pole of which one edge part is positioned on the air bearing surface and that generates magnetic flux traveling toward the magnetic recording medium; a waveguide configured with a core through which light propagates and a cladding, at least one part of which extends to the air bearing surface, surrounding the periphery of the core; a plasmon generator that faces a part of the core and that extends to the air bearing surface. The plasmon generator is configured with a first part and a second part that are joined; the first part that is positioned on the air bearing surface side and that is made of a high melting point material, and the second part that is positioned away from the air bearing surface and that is made of a material with a small value ∈″, which is an imaginary component of permittivity.

摘要翻译： 一种热辅助磁头，其包括面向记录介质的空气轴承表面并且在加热记录介质的同时进行磁记录的磁辅助磁头包括：磁记录元件，其包括：一个边缘部分位于空气轴承表面上并产生 向磁记录介质传播的磁通量; 配置有光传播的芯的波导和包围，其至少一部分延伸到空气支承表面，围绕芯的周边; 等离子体发生器，其面向芯部的一部分并且延伸到空气轴承表面。 等离子体发生器配置有连接的第一部分和第二部分; 位于空气轴承面侧并由高熔点材料制成的第一部分和远离空气轴承表面并由具有小值∈“的材料制成的第二部分， 这是介电常数的虚部。

公开(公告)号：US08125858B2

公开(公告)日：2012-02-28

申请号：US12728890

申请日：2010-03-22

申请人： Shinji Hara ,  Tsutomu Chou ,  Kosuke Tanaka ,  Eiji Komura ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Susumu Aoki ,  Takeshi Tsutsumi

发明人： Shinji Hara ,  Tsutomu Chou ,  Kosuke Tanaka ,  Eiji Komura ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Susumu Aoki ,  Takeshi Tsutsumi

IPC分类号： G11B11/00

CPC分类号： G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B2005/001 ,  G11B2005/0021

摘要： A plasmon generator has an outer surface including a plasmon exciting part, and has a near-field light generating part located in a medium facing surface. The plasmon exciting part faces an evanescent light generating surface of a waveguide's core with a predetermined distance therebetween. The outer surface of the plasmon generator further includes first and second inclined surfaces that are each connected to the plasmon exciting part. The first and second inclined surfaces increase in distance from each other with increasing distance from the plasmon exciting part. The plasmon generator includes a shape changing portion where the angle of inclination of each of the first and second inclined surfaces with respect to the evanescent light generating surface increases continuously with decreasing distance to the medium facing surface.

摘要翻译： 等离子体发生器具有包括等离子体激元部分的外表面，并且具有位于介质面对表面中的近场光产生部分。 等离子激元激发部分面对波导芯的渐逝光产生表面，其间具有预定的距离。 等离子体发生器的外表面还包括各自连接到等离子体激元部分的第一和第二倾斜表面。 第一和第二倾斜表面随距离等离激子激发部分的距离增加而彼此间距离增加。 等离子体发生器包括形状改变部分，其中第一和第二倾斜表面中的每一个相对于ev逝光产生表面的倾斜角度随着到介质面向表面的距离的减小而连续增加。

公开(公告)号：US07881023B2

公开(公告)日：2011-02-01

申请号：US12019202

申请日：2008-01-24

申请人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

发明人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3912 ,  G11B5/398 ,  H01L43/08

摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer located and formed such that the magnetoresistive unit is sandwiched between them, with a sense current applied in a stacking direction, wherein the magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is interposed between them, wherein the first shield layer, and the second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and the first ferromagnetic layer, and the second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of the first shield layer and the second shield layer.

摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及位于并形成第一屏蔽层和第二屏蔽层，使得磁阻单元夹在它们之间，并施加感应电流 在叠层方向上，其中所述磁阻单元包括非磁性中间层，以及堆叠并形成所述非磁性中间层的第一铁磁层和第二铁磁层，其中所述第一屏蔽层和所述第二屏蔽层 在磁化方向上由磁化方向控制装置控制，并且第一铁磁层和第二铁磁层受到磁力的影响而产生相互磁化相反方向产生的反平行磁化状态的动作 第一屏蔽层的动作和 第二屏蔽层。

公开(公告)号：US07876535B2

公开(公告)日：2011-01-25

申请号：US12019205

申请日：2008-01-24

申请人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

发明人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive device of a CPP (current perpendicular to plane) structure includes a magnetoresistive unit sandwiched between a first substantially soft magnetic shield layer from below, and a second substantially soft magnetic shield layer from above, with a sense current applied in a stacking direction. The magnetoresistive unit includes a non-magnetic intermediate layer sandwiched between a first ferromagnetic layer, and a second ferromagnetic layer. At least one of the first and second shield layers is configured in a window frame of a planar shape, including a front frame-constituting portion and a back frame-constituting portion partially comprising a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with magnetic flux going all the way around the window framework, turning the magnetization of the front frame-constituting portion into a single domain.

摘要翻译： CPP（电流垂直于平面）结构的磁阻器件包括夹在下面的第一基本上软磁屏蔽层和从上方的第二基本软磁屏蔽层之间的磁阻单元，其中沿堆叠方向施加感测电流。 磁阻单元包括夹在第一铁磁层和第二铁磁层之间的非磁性中间层。 第一屏蔽层和第二屏蔽层中的至少一个被配置在平面形状的窗框中，包括前框架构成部分和后框架构成部分，部分地包括具有偏磁场的非磁性间隙层的组合， 应用层。 非磁性间隙层与偏置磁场施加层的组合形成闭合的磁路，其中磁通量一直围绕窗框架，将前框架构成部分的磁化转变为单个畴。

公开(公告)号：US20100079917A1

公开(公告)日：2010-04-01

申请号：US12285069

申请日：2008-09-29

申请人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

发明人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A first shield portion located below an MR stack includes a first main shield layer, a first antiferromagnetic layer, and a first magnetization controlling layer including a first ferromagnetic layer exchange-coupled to the first antiferromagnetic layer. A second shield portion located on the MR stack includes a second main shield layer, a second antiferromagnetic layer, and a second magnetization controlling layer including a second ferromagnetic layer exchange-coupled to the second antiferromagnetic layer. The MR stack includes two free layers magnetically coupled to the two magnetization controlling layers. Only one of the two magnetization controlling layers includes a third ferromagnetic layer that is antiferromagnetically exchange-coupled to the first or second ferromagnetic layer through a nonmagnetic middle layer. The first shield portion includes an underlayer disposed on the first main shield layer, and the first antiferromagnetic layer is disposed on the underlayer.

摘要翻译： 位于MR堆叠下方的第一屏蔽部分包括第一主屏蔽层，第一反铁磁层和包括与第一反铁磁层交换耦合的第一铁磁层的第一磁化控制层。 位于MR堆叠上的第二屏蔽部分包括第二主屏蔽层，第二反铁磁层和包括交换耦合到第二反铁磁层的第二铁磁层的第二磁化控制层。 MR堆叠包括磁耦合到两个磁化控制层的两个自由层。 两个磁化控制层中的仅一个包括通过非磁性中间层反铁磁交换耦合到第一或第二铁磁层的第三铁磁层。 第一屏蔽部分包括设置在第一主屏蔽层上的底层，并且第一反铁磁层设置在底层上。

公开(公告)号：US20100053820A1

公开(公告)日：2010-03-04

申请号：US12230604

申请日：2008-09-02

申请人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

发明人： Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Takahiko Machita ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3286

摘要： A magnetoresistive element includes first and second shield layers, an MR stack disposed therebetween, a first hard magnetic layer for setting the magnetization direction of the first shield layer, and a second hard magnetic layer for setting the magnetization direction of the second shield layer. The MR stack includes a first ferromagnetic layer magnetically coupled to the first shield layer, a second ferromagnetic layer magnetically coupled to the second shield layer, and a spacer layer between the first and second ferromagnetic layers. The first and second ferromagnetic layers have magnetizations that are in antiparallel directions when any external magnetic field other than a magnetic field resulting from the first and second hard magnetic layers is not applied to the two ferromagnetic layers, and that change their directions in response to an external magnetic field other than the magnetic field resulting from the first and second hard magnetic layers.

摘要翻译： 磁阻元件包括第一和第二屏蔽层，设置在其间的MR堆叠，用于设定第一屏蔽层的磁化方向的第一硬磁性层和用于设定第二屏蔽层的磁化方向的第二硬磁性层。 MR堆叠包括磁耦合到第一屏蔽层的第一铁磁层，与第二屏蔽层磁耦合的第二铁磁层，以及在第一和第二铁磁层之间的间隔层。 当由第一和第二硬磁性层产生的磁场以外的任何外部磁场不施加到两个铁磁层时，第一和第二铁磁层具有处于反平行方向的磁化，并且响应于 除了由第一和第二硬磁性层产生的磁场以外的外部磁场。

公开(公告)号：US20090201612A1

公开(公告)日：2009-08-13

申请号：US12028243

申请日：2008-02-08

申请人： Koji SHIMAZAWA ,  Tsutomu Chou ,  Daisuke Miyauchi

发明人： Koji SHIMAZAWA ,  Tsutomu Chou ,  Daisuke Miyauchi

IPC分类号： G11B5/33 ,  H01L43/08

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B5/398 ,  G11B2005/3996 ,  H01L43/08

摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer which are located and formed such that the magnetoresistive unit is sandwiched between them from above and below, with a sense current applied in the stacking direction, wherein said magnetoresistive unit comprises a non-magnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them.

摘要翻译： 本发明提供了CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及第一屏蔽层和第二屏蔽层，它们被定位和形成，使得磁阻单元从上方和下方夹在它们之间 ，其中所述磁阻单元包括非磁性中间层，并且堆叠并形成第一铁磁层和第二铁磁层，使得所述非磁性中间层夹在它们之间。

公开(公告)号：US08310791B2

公开(公告)日：2012-11-13

申请号：US12382309

申请日：2009-03-13

申请人： Takahiko Machita ,  Tomohito Mizuno ,  Koji Shimazawa ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Toshiyuki Ayukawa

发明人： Takahiko Machita ,  Tomohito Mizuno ,  Koji Shimazawa ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Toshiyuki Ayukawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.

摘要翻译： 磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。 因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

公开(公告)号：US20100232074A1

公开(公告)日：2010-09-16

申请号：US12382309

申请日：2009-03-13

申请人： Takahiko Machita ,  Tomohito Mizuno ,  Koji Shimazawa ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Toshiyuki Ayukawa

发明人： Takahiko Machita ,  Tomohito Mizuno ,  Koji Shimazawa ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Toshiyuki Ayukawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.

摘要翻译： 磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。 因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

公开(公告)号：US20090190270A1

公开(公告)日：2009-07-30

申请号：US12022538

申请日：2008-01-30

申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.

摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流 其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域 所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化 沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。 因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（ 上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。