摘要:
This invention is about extracting two signals from the signal in which more than two frequency components are mixed. In detail, this is about extracting low or high frequency component by distinguishing signal distortion using slope tracing wave. This invention applies two slope tracing wave to an arbitrary signal to track signal distortion and extract and remove low frequency component such as the variation of electrocardiogram signal baseline or easily extract or remove 60 Hz interference wave easily introduced to electrocardiogram. In addition, this allows easy detection of a specific waveform such as P wave and T wave from the electrocardiogram diagram by using the difference between the arbitrary signal and two slope tracing wave. The methods of this invention include distinguishing signal distortion, and detecting, extracting, removing the variation of unfavorable baseline using the shape characteristics of the distinguished section, and also detecting, extracting, removing external interference wave such as 60 Hz noise. In addition, the methods of this invention include distinguishing signal distortion and easily detecting P wave and T wave when the baseline is changed using the shape characteristics of the distinguished section.
摘要:
An apparatus for improving write/read endurance of non-volatile memory includes a non-volatile memory area including a plurality of non-volatile memory cells to store data, and an endurance improving circuit detecting a degradation characteristic of the non-volatile memory cells upon the integrated circuit card being reset and initialized. The apparatus increases at least one of a write voltage used to write first data to the non-volatile memory cells and a read voltage used to read second data from the non-volatile memory cells based on a detection result. A method for improving write/read endurance of non-volatile memory includes monitoring the characteristic of non-volatile memory cells upon an integrated circuit card being reset and initialized, and increasing at least one among a write voltage and a read voltage which are applied to the non-volatile memory cells based on a monitoring result.
摘要:
A high speed block matching algorithm for a bi-directional motion vector estimation, capable of improving the accuracy and the amount of computation in the bi-directional motion vector estimation by using a uniform motion model for displacement and spatial correlation of motion vectors in a bi-directional motion estimated prediction structure adaptively using pictures forwardly predicted from a past reference picture and pictures bi-directionally predicted from two, past and future reference.
摘要:
Embodiments of the invention are generally directed to testing of high-speed input-output devices. An embodiment of a high-speed input-output apparatus includes a transmitter and a receiver, and a loop-back connection from an output of the transmitter to an input of the receiver, the loop-back connection including a first connector and a second connector for transmission of differential signals. The apparatus further includes a first inductor having a first terminal and a second terminal and second inductor having a first terminal and a second terminal, the first terminal of the first inductor being connected to the first connector and the first terminal of the second inductor being connected to the second connector, the second terminal of the first inductor and the second terminal of the second inductor providing a test access port for direct current testing of the apparatus.
摘要:
A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
摘要:
A liquid crystal display device includes a power consumption reduction portion that analyzes a histogram of first image data of an image and generates second image data and a first luminance control signal, wherein, when the image includes an irrelevance region which is substantially irrelevant to degradation of display quality, the power consumption reduction portion analyzes a histogram of first image data of other region of the image except for an excluded region, and wherein the excluded region includes at least the irrelevance region; a timing controller that is supplied with the second image data and the first luminance control signal and generates gate control signals, data control signals and a second luminance control signal; a gate driving portion that generates gate voltages using the gate control signals; a data driving portion that generates data voltages using the second image data and the data control signals; a liquid crystal panel that displays the image using the gate voltages and the data voltages; a backlight control portion that generates a backlight control signal using the second luminance control signal; and a backlight unit that supplies light according to the backlight control signal.
摘要:
An organic light emitting display device includes a buffer layer on a substrate, the buffer layer including nano-particles, a pixel electrode on the buffer layer, an opposite electrode on the pixel electrode and facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode.
摘要:
An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.
摘要:
A thin film transistor using an oxide semiconductor as an active layer, and its method of manufacture. The thin film transistor includes: a substrate; an active layer formed of an oxide semiconductor; a gate insulating layer formed of a dielectric on the active layer, the dielectric having an etching selectivity of 20 to 100:1 with respect to the oxide semiconductor; a gate electrode formed on the gate insulating layer; an insulating layer formed on the substrate including the gate electrode and having contact holes to expose the active layer; and source and drain electrodes connected to the active layer through the contact holes. Since the source and drain electrodes are not overlapped with the gate electrode, parasitic capacitance between the source and drain electrodes and the gate electrode is minimized. Since the gate insulating layer is formed of dielectric having a high etching selectivity with respect to oxide semiconductor, the active layer is not deteriorated.
摘要:
An organic light emitting display device including a plurality of scan lines arranged in a first direction, a plurality of data lines arranged in a second direction, the plurality of data lines intersecting with the plurality of scan lines, and pixels respectively disposed at intersection portions of the scan and data lines, each pixel including at least one thin film transistor (TFT) and an organic light emitting diode, wherein the TFT is an oxide TFT, the oxide TFT including a first oxide semiconductor layer as an active layer, and a second oxide semiconductor layer is disposed between intersecting scan and data lines.