DIGITAL DIAGNOSTICS PARAMETER STORAGE
    61.
    发明申请
    DIGITAL DIAGNOSTICS PARAMETER STORAGE 有权
    数字诊断参数存储

    公开(公告)号:US20090168858A1

    公开(公告)日:2009-07-02

    申请号:US12031360

    申请日:2008-02-14

    申请人: Jun Luo

    发明人: Jun Luo

    IPC分类号: H04B17/00 H04B10/08

    CPC分类号: H04B10/40

    摘要: A method of managing storage of digital diagnostics parameters on a transceiver device may include loading stored digital diagnostics parameters into the system memory, receiving updates to the digital diagnostics parameters in the system memory, and writing the updates to the digital diagnostic parameters in the system memory to persistent memory while providing access to other components to the digital diagnostics parameters by way of the system memory.

    摘要翻译: 管理收发器设备上的数字诊断参数的存储的方法可以包括将存储的数字诊断参数加载到系统存储器中,接收对系统存储器中的数字诊断参数的更新,以及将更新写入系统存储器中的数字诊断参数 持续存储器,同时通过系统存储器访问其他组件到数字诊断参数。

    Heat dissipating apparatus
    62.
    发明申请
    Heat dissipating apparatus 失效
    散热装置

    公开(公告)号:US20060120044A1

    公开(公告)日:2006-06-08

    申请号:US11242393

    申请日:2005-10-03

    IPC分类号: H05K7/20

    摘要: A heat dissipating apparatus includes a heat sink (20) having a base plate (22) for contacting an electronic component (10). A number of main fins (24) extend from the base plate. A cooling fan (30) is mounted on the heat sink. A center of the cooling fan offsets in a first direction from a center of the electronic component, so that a portion of the cooling fan that generates more and stronger airflows than the center of the cooling fan does is aligned with the center of the electronic component.

    摘要翻译: 散热装置包括具有用于接触电子部件(10)的基板(22)的散热器(20)。 多个主翅片(24)从基板延伸。 冷却风扇(30)安装在散热器上。 冷却风扇的中心从电子部件的中心沿第一方向偏移,使得与冷却风扇的中心相比产生更多和更强气流的冷却风扇的一部分与电子部件的中心对准 。

    Method and apparatus for communication between mobile phone and TV set
    65.
    发明授权
    Method and apparatus for communication between mobile phone and TV set 有权
    手机与电视机通讯的方法和装置

    公开(公告)号:US08736762B2

    公开(公告)日:2014-05-27

    申请号:US13381944

    申请日:2010-12-16

    IPC分类号: H04N7/00 H04N11/00

    摘要: The present disclosure relates to a method and an apparatus for communication between a mobile phone and a TV set. The method comprises the following steps of: generating standard RGB signals by an LCD controller in a central processing unit (CPU) of the mobile phone; transmitting the RGB signals to an LCD of the mobile phone and a TV-OUT chip simultaneously; enabling the TV-OUT chip to receive and recognize the RGB signals through configuration of commands; carrying out video conversion on the RGB signals by the TV-OUT chip to output standard AV signals; and transmitting the AV signals to a display of the TV set via a dock. With this disclosure, information on the LCD screen of the mobile phone can be transmitted to the display of the TV set.

    摘要翻译: 本公开涉及一种用于移动电话和电视机之间的通信的方法和装置。 该方法包括以下步骤:通过移动电话的中央处理单元(CPU)中的LCD控制器生成标准RGB信号; 将RGB信号同时发送到移动电话的LCD和TV-OUT芯片; 使TV-OUT芯片能够通过配置命令来接收和识别RGB信号; 通过TV-OUT芯片对RGB信号进行视频转换,输出标准AV信号; 以及经由码头将AV信号发送到电视机的显示器。 通过本公开,可以将移动电话的LCD屏幕上的信息发送到电视机的显示器。

    Wireless monitor voice indication parking indicator
    66.
    发明授权
    Wireless monitor voice indication parking indicator 失效
    无线监控语音指示停车指示灯

    公开(公告)号:US08674847B2

    公开(公告)日:2014-03-18

    申请号:US12745137

    申请日:2008-09-19

    IPC分类号: B60Q1/48

    摘要: A wireless monitor voice indication parking indicator includes a transmitting part and a receiving part. The transmitting part includes a camera, an ultrasonic transmitting circuit, an ultrasonic receiving circuit, a power circuit, a voice indication circuit, a video superimposed circuit, a wireless transmitting circuit and a Single-chip Microcomputer (SCM) processor. The receiving part includes a power circuit, a wireless receiving circuit, an audio separation circuit, a control magnification output circuit, an alarm and a monitor. The power circuit supplies necessary stable voltage.

    摘要翻译: 无线监视器语音指示停车指示符包括发送部分和接收部分。 发送部分包括相机,超声波发送电路,超声波接收电路,电源电路,语音指示电路,视频叠加电路,无线发射电路和单片微机(SCM)处理器。 接收部分包括电源电路,无线接收电路,音频分离电路,控制倍率输出电路,报警器和监视器。 电源电路提供必要的稳定电压。

    Image processing apparatus, image processing method and image processing program
    67.
    发明授权
    Image processing apparatus, image processing method and image processing program 失效
    图像处理装置,图像处理方法和图像处理程序

    公开(公告)号:US08620109B2

    公开(公告)日:2013-12-31

    申请号:US13100195

    申请日:2011-05-03

    IPC分类号: G06K9/32

    CPC分类号: G06T3/4053

    摘要: Disclosed herein is an image processing apparatus including an up-sampling section configured to carry out up-sampling processing in order to generate an up-sampled image, a motion-compensated image generation section configured to generate a motion-compensated image as a result of correction processing to adjust a referenced image having the second resolution to a photographing-object position on the up-sampled image by making use of information on a difference between the up-sampled image and the referenced image, a blending processing section configured to generate a blended image as a result of blending processing to blend the up-sampled image with the referenced image, and an output-image generation section configured to receive and process the blended image as well as the up-sampled image in order to generate an output blended image obtained by blending a super-resolution processing-result image with a noise-reduction processing-result image.

    摘要翻译: 本文公开了一种图像处理装置,包括:上采样部,被配置为执行上采样处理以生成上采样图像;运动补偿图像生成部,被配置为生成作为运动补偿图像的结果的运动补偿图像 校正处理,通过利用关于上采样图像和参考图像之间的差异的信息,将具有第二分辨率的参考图像调整到上取样图像上的拍摄对象位置,混合处理部分, 混合图像作为混合处理以将上采样图像与参考图像混合的结果;以及输出图像生成部分,被配置为接收并处理混合图像以及上采样图像,以便产生输出混合 通过将超分辨率处理结果图像与降噪处理结果图像混合而获得的图像。

    Image processing apparatus, image processing method, and program
    68.
    发明授权
    Image processing apparatus, image processing method, and program 失效
    图像处理装置,图像处理方法和程序

    公开(公告)号:US08311282B2

    公开(公告)日:2012-11-13

    申请号:US13030447

    申请日:2011-02-18

    IPC分类号: G06K9/00

    摘要: An image processing apparatus includes: a motion prediction processing unit detecting an inter-image motion between a standard image and a reference image; a motion compensation processing unit generating a motion-compensated image by moving the reference image so as to be aligned with the standard image in a pixel position; an addition processing unit generating a noise-reduced image from which noise of the standard image is reduced; and an addition determination unit calculating an addition weight of the motion-compensated image. The addition determination unit includes a first motion region detection unit calculating a motion region determination value, a second motion region detection unit calculating a motion region determination value, a control map generation unit selecting and outputting one of two motion region determination values, a noise determination table generation unit generating or correcting a noise determination table, and an addition determination processing execution unit determining the addition weight.

    摘要翻译: 一种图像处理装置,包括:运动预测处理单元,检测标准图像与参考图像之间的图像间运动; 运动补偿处理单元,通过移动所述参考图像以在像素位置与所述标准图像对准来生成运动补偿图像; 生成降低了标准图像噪声的降噪图像的加法处理单元; 以及加法确定单元,计算运动补偿图像的加权重量。 加法确定单元包括计算运动区域确定值的第一运动区域检测单元,计算运动区域确定值的第二运动区域检测单元,选择并输出两个运动区域确定值之一的控制图生成单元,噪声判定 生成或校正噪声判定表的表生成单元,以及确定加权重的加法确定处理执行单元。

    Semiconductor device and manufacturing method thereof
    69.
    发明申请
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号:US20120181586A1

    公开(公告)日:2012-07-19

    申请号:US13379120

    申请日:2011-04-22

    申请人: Jun Luo Chao Zhao

    发明人: Jun Luo Chao Zhao

    IPC分类号: H01L29/78 H01L21/336

    摘要: The invention discloses a novel MOSFET device fabricated by a gate last process and its implementation method, the device comprising: a substrate; a gate stack structure located on a channel region in the substrate, on either side of which is eliminated the conventional isolation spacer; an epitaxially grown ultrathin metal silicide constituting a source/drain region. Wherein the device eliminates the high resistance region below the conventional isolation spacer; a dopant segregation region with imlanted ions is formed between the source/drain and the channel region, which decreases the Schottky barrier height between the metal silicide source/drain and the channel. At the same time, the epitaxially grown metal silicide can withstand a second high-temperature annealing used for improving the performance of a high-k gate dielectric material, which further improves the performance of the device. The MOSFET according to the invention reduces the parasitic resistance and capacitance greatly and thereby decreases the RC delay, thus improving the switching performance of the MOSFET device significantly.

    摘要翻译: 本发明公开了一种通过门最后工艺制造的新型MOSFET器件及其实现方法,该器件包括:衬底; 栅极叠层结构位于衬底的沟道区上,其任一侧消除了传统隔离间隔物; 构成源极/漏极区域的外延生长的超薄金属硅化物。 其中该器件消除了传统隔离间隔物下面的高电阻区域; 在源极/漏极和沟道区之间形成具有经过离子注入的掺杂剂偏析区域,这降低了金属硅化物源极/漏极与沟道之间的肖特基势垒高度。 同时,外延生长的金属硅化物可以承受用于改善高k栅介质材料性能的第二高温退火,这进一步提高了器件的性能。 根据本发明的MOSFET大大降低了寄生电阻和电容,从而降低了RC延迟,从而显着提高了MOSFET器件的开关性能。

    METHOD FOR RESTRICTING LATERAL ENCROACHMENT OF METAL SILICIDE INTO CHANNEL REGION
    70.
    发明申请
    METHOD FOR RESTRICTING LATERAL ENCROACHMENT OF METAL SILICIDE INTO CHANNEL REGION 有权
    限制金属硅化物向通道区域的侧向加压的方法

    公开(公告)号:US20120156873A1

    公开(公告)日:2012-06-21

    申请号:US13063922

    申请日:2011-01-27

    IPC分类号: H01L21/28

    摘要: A method for restricting lateral encroachment of the metal silicide into the channel region, comprising: providing a semiconductor substrate, a gate stack being formed on the semiconductor substrate, a source region being formed in the semiconductor on one side of the gate stack, and a drain region being formed in the semiconductor substrate on the other side of the gate stack; forming a sacrificial spacer around the gate stack and on the semiconductor substrate; depositing a metal layer for covering the semiconductor substrate, the gate stack and the sacrificial spacer; performing a thermal treatment on the semiconductor substrate, thereby causing the metal layer to react with the sacrificial spacer and the semiconductor substrate in the source region and the drain region; removing the sacrificial spacer, reaction products of the sacrificial spacer and the metal layer, and a part of the metal layer which does not react with the sacrificial spacer.

    摘要翻译: 一种用于限制金属硅化物向通道区域的横向侵入的方法,包括:提供半导体衬底,形成在半导体衬底上的栅堆叠,形成在栅叠层一侧的半导体中的源区, 漏极区域形成在栅极堆叠的另一侧上的半导体衬底中; 在所述栅极堆叠和所述半导体衬底上形成牺牲隔离物; 沉积用于覆盖半导体衬底,栅极堆叠和牺牲隔离物的金属层; 对所述半导体基板进行热处理,由此使所述金属层与所述源极区域和所述漏极区域中的所述牺牲隔离物和所述半导体基板反应; 去除牺牲间隔物,牺牲间隔物和金属层的反应产物,以及不与牺牲间隔物反应的金属层的一部分。