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公开(公告)号：US5457153A
公开(公告)日：1995-10-10
申请号：US289032
申请日：1994-08-11
IPC分类号： G02B5/20 , C08K5/20 , C08K5/435 , G03F7/004 , G03F7/11 , H01L21/027 , H05K3/28 , C08K5/02 , C08L27/14
摘要： Proposed is an aqueous coating composition based on a polyvinyl alcohol suitable for use to provide a protective film on various electronic materials. The composition comprises, as dissolved in water, a partially saponified polyvinyl alcohol having a specified average degree of polymerization and a specified degree of saponification, a fluorine-containing surface active agent and, optionally, a quaternary ammonium hydroxide. The liquid coating composition is preferably freed from sodium ions as an impurity by an ion-exchange treatment.
摘要翻译： 提出了一种基于适用于在各种电子材料上提供保护膜的聚乙烯醇的水性涂料组合物。 该组合物包含溶解在水中的具有指定平均聚合度和特定皂化度的部分皂化的聚乙烯醇，含氟表面活性剂和任选的季铵氢氧化物。 液体涂料组合物优选通过离子交换处理除去作为杂质的钠离子。
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公开(公告)号：US5368783A
公开(公告)日：1994-11-29
申请号：US52484
申请日：1993-04-23
CPC分类号： G03F7/038 , G03F7/0045
摘要： Disclosed is a novel negative-working radiation-sensitive resist composition useful in the photolithographic patterning works of resist layers on substrate surfaces in the manufacture of semiconductor devices and capable of giving a finely patterned resist layer with high resolution and having an excellently orthogonal cross sectional profile of the line-wise patterned resist layer with an outstandingly high sensitivity to various actinic rays. The composition comprises, as the essential ingredients, (a) an alkali-soluble resin such as a cresol novolac resin, (b) a specific alkoxymethylated amino resin, e.g., methoxymethylated melamine resin, and (c) a specific triazine compound in a limited weight proportion.
摘要翻译： 公开了一种新颖的负性辐射敏感抗蚀剂组合物，其可用于半导体器件制造中的衬底表面上的抗蚀剂层的光刻图案化工作，并且能够以高分辨率给出精细图案化的抗蚀剂层并且具有非常正交的横截面轮廓 的线形图案化抗蚀剂层，对各种光化射线具有极高的灵敏度。 组合物包含（a）碱溶性树脂如甲酚酚醛清漆树脂，（b）特定烷氧基甲基化氨基树脂，例如甲氧基甲基化三聚氰胺树脂和（c）有限制的三嗪化合物作为必要成分 重量比例。
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63.发明授权Method and liquid coating composition for the formation of silica-based coating film on substrate surface 失效用于在基材表面形成二氧化硅基涂膜的方法和液体涂料组合物
公开(公告)号：US5614251A
公开(公告)日：1997-03-25
申请号：US564710
申请日：1995-11-29
IPC分类号： C08G77/18 , C03C1/00 , C08G77/06 , C09D183/02 , C09D183/04 , C09D183/05 , B05D3/02
CPC分类号： C03C1/008 , C09D183/02 , C09D183/04
摘要： Proposed is a liquid coating composition for the formation of a siliceous coating film having good storage stability against gelation for the protection, levelling or electric insulation of various substrate surfaces. The composition is a uniform solution comprising:(A) a partial cohydrolysis-cocondensation product of(a) a first hydrolyzable silane compound represented by the general formulaHSi(OR).sub.3, in which each R is, independently from the others, an alkyl group having 1 to 4 carbon atoms or a phenyl group, and(b) a second hydrolyzable silane compound represented by the general formulaSi(OR).sub.4, in which each R has the same meaning as defined above,in a molar ratio of (a):(b) in the range from 1:9 to 9:1; and (B) an organic solvent to dissolve the component (A). The storage stability of the coating composition can be improved by removing the alcohol contained therein as the hydrolysis product of the silane compounds to such a content as not to exceed 15% by weight.
摘要翻译： 提出了一种液体涂料组合物，用于形成具有良好保存稳定性的硅质涂膜，用于各种基材表面的保护，调平或电绝缘。 该组合物是一种均匀溶液，其包含：（A）（a）由通式为H（OR）3表示的第一可水解硅烷化合物的部分共水解 - 缩聚产物，其中每个R独立地为烷基 具有1至4个碳原子或苯基，和（b）由通式Si（OR）4表示的第二可水解硅烷化合物，其中每个R具有与上述相同的含义，摩尔比为（a） ：（b）在1：9至9：1的范围内; 和（B）有机溶剂以溶解组分（A）。 通过将其中含有的醇作为硅烷化合物的水解产物除去不超过15重量％的含量，可以提高涂料组合物的保存稳定性。
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公开(公告)号：US4944893A
公开(公告)日：1990-07-31
申请号：US243001
申请日：1988-09-12
IPC分类号： C11D7/50 , G03C11/00 , G03F7/00 , G03F7/42 , H01L21/027
CPC分类号： C11D7/5022 , G03F7/426
摘要： The remover composition of the invention is advantageous in respect of the thermal stability without precipitation of insoluble matters when the remover is used prolongedly in a removing work of patterned resist, e.g., photoresist, layer in the manufacturing process of semiconductor devices. The inventive remover composition characteristically contains 1 to 50,000 ppm by weight of an acetylene alcohol such as 3-methyl-2-butyn-3-ol added to an organic remover solution composed of an alkylbenzene sulfonic acid, phenol compound, halogenated hydrocarbon compound and/or aromatic hydrocarbon compound.
摘要翻译： 当在半导体器件的制造过程中图案化抗蚀剂例如光致抗蚀剂层的去除工作中延长使用去除剂时，本发明的去除剂组合物在热稳定性方面是有利的。 本发明的去除剂组合物特征在于包含1至50,000ppm重量的乙炔醇，例如3-烷基苯磺酸，酚化合物，卤代烃化合物和/或其混合物所组成的有机去除剂溶液中的3-甲基-2-丁炔-3-醇， 或芳族烃化合物。
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65.发明授权Composition for forming antireflective coating film and method for forming resist pattern using same 失效用于形成抗反射涂膜的组合物和使用其形成抗蚀剂图案的方法公开(公告)号：US06268108B1
公开(公告)日：2001-07-31
申请号：US09116460
申请日：1998-07-16
IPC分类号： G03F7004
CPC分类号： G03F7/091
摘要： The present invention provides a composition for forming an antireflective coating film which is not liable to intermixing between the resist composition layer and the antireflective coating layer and a method for forming a resist pattern having an excellent dimensional accuracy and section shape. The composition consists of (A) a compound which produces an acid upon irradiation with actinic rays, (B) a compound which undergoes crosslinking reaction in the presence of an acid, (C) a dye and (D) an organic solvent. The method for forming a resist pattern comprises applying the composition for forming an antireflective coating film to a semiconductor substrate, drying the composition coated, irradiating the entire surface of the coated material with actinic rays so that it undergoes crosslinking reaction to form an antireflective coating film thereon, applying a resist composition to the antireflective coating film, drying the coated material, and then subjecting the coated material to lithographic processing to form a resist pattern thereon.
摘要翻译： 本发明提供了一种用于形成不易于在抗蚀剂组合物层和抗反射涂层之间混合的抗反射涂膜的组合物和形成具有优异的尺寸精度和截面形状的抗蚀剂图案的方法。 组合物由（A）在光化射线照射时产生酸的化合物，（B）在酸存在下进行交联反应的化合物，（C）染料和（D）有机溶剂。 形成抗蚀剂图案的方法包括将用于形成抗反射涂膜的组合物施加到半导体衬底上，干燥涂覆的组合物，用光化射线照射涂覆材料的整个表面，使其经历交联反应以形成抗反射涂膜 在其上涂布抗蚀剂组合物到抗反射涂膜上，干燥涂覆的材料，然后对涂覆材料进行光刻处理以在其上形成抗蚀剂图案。
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公开(公告)号：US5976760A
公开(公告)日：1999-11-02
申请号：US898105
申请日：1997-07-22
申请人： Katsumi Oomori , Hideo Hada , Fumitake Kaneko , Mitsuru Sato , Kazufumi Sato , Toshimasa Nakayama
发明人： Katsumi Oomori , Hideo Hada , Fumitake Kaneko , Mitsuru Sato , Kazufumi Sato , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , G03C1/492
CPC分类号： G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： Proposed is a novel chemical-sensitization resist composition capable of giving a positively or negatively patterned resist layer of excellent pattern resolution and cross sectional profile of the patterned resist layer with high sensitivity. Characteristically, the resist composition is formulated, as combined with a resinous ingredient which is subject to changes in the solubility behavior in an alkaline developer solution by interaction with an acid, with a specific oximesulfonate compound as the radiation-sensitive acid-generating agent represented by the general formulaR.sup.1 --C(CN).dbd.N--O--SO.sub.2 --R.sup.2,in which R.sup.1 is an inert organic group and R.sup.2 is an unsubstituted or substituted polycyclic monovalent hydrocarbon group selected from the group consisting of polycyclic aromatic hydrocarbon groups such as naphthyl and polycyclic non-aromatic hydrocarbon groups such as a terpene or camphor residue.
摘要翻译： 提出了一种能够以高灵敏度赋予图案化抗蚀剂层优异图案分辨率和截面轮廓的正或负图案化抗蚀剂层的新型化学增感抗蚀剂组合物。 特别地，将抗蚀剂组合物配制成与通过与酸相互作用而在碱性显影剂溶液中溶解度行为发生变化的树脂成分与特定的肟磺酸酯化合物作为辐射敏感性产酸剂， 通式为R1-C（CN）= NO-SO2-R2，其中R1为惰性有机基团，R2为未取代或取代的多环一价烃基，选自多环芳烃基如萘基和多环 非芳族烃基如萜烯或樟脑残基。
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67.发明授权Chemical-amplification-type negative resist composition and method for forming negative resist pattern 失效化学放大型负型抗蚀剂组合物及其形成负型抗蚀剂图案的方法
公开(公告)号：US5955241A
公开(公告)日：1999-09-21
申请号：US956792
申请日：1997-10-23
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical-amplification-type negative resist composition and a method for forming a negative resist pattern using the same. The chemical-amplification-type negative resist composition comprises (A) an alkali-soluble resin, (B) an acid-generating agent, and (C) a compound capable of causing crosslinking reaction in the presence of an acid, wherein the ingredient (A) is a mixture comprising (i) a copolymer which comprises constitutional repeating units of a hydroxystyrene type, has a weight average molecular weight of 2,000 to 4,000, and has a ratio of the weight average molecular weight to the number average molecular weight falling within 1.0 to 2.0; and (ii) a hydroxystyrene homopolymer, and wherein the dissolution rate of the ingredient (A) at 23.degree. C. in a 2.38% by weight tetramethylammonium hydroxide aqueous solution falls within 80 to 300 nm/s.
摘要翻译： 本发明提供化学放大型负光刻胶组合物和使用其形成负光刻胶图案的方法。 化学增幅型负性抗蚀剂组合物包含（A）碱溶性树脂，（B）酸产生剂和（C）在酸存在下能够引起交联反应的化合物，其中成分（ A）是包含（i）包含羟基苯乙烯型结构重复单元的共聚物，其重均分子量为2,000至4,000的共聚物，并且其重均分子量与数均分子量的比率 1.0〜2.0; 和（ii）羟基苯乙烯均聚物，并且其中成分（A）在23℃在2.38重量％四甲基氢氧化铵水溶液中的溶解速率为80-300nm / s。
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公开(公告)号：US5955240A
公开(公告)日：1999-09-21
申请号：US738784
申请日：1996-10-29
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/106
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a chemical compound which generates an acid when exposed to radiations, and (C) an organic carboxylic acid compound and (D) an amine, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene having a weight-average molecular weight of from 8,000 to 25,000 and a molecular weight distribution (Mw/Mn) of 1.5 or less where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms;and (b) a polyhydroxystyrene having a weight-average molecular weight of from 8,000 to 25,000 and a molecular weight distribution (M.sub.w /M.sub.n) of 1.5 or less where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.
摘要翻译： 公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。 该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（C）有机羧酸化合物和（ D）胺，其中所述树脂组分（A）是包含（a）重均分子量为8,000至25,000的聚羟基苯乙烯和分子量分布（Mw / Mn）为1.5以下的混合物，其中， 10〜60mol％的羟基已被通式（I）的残基取代：其中R1表示氢原子或甲基，R2表示甲基或乙基，R3表示低级烷基 具有1至4个碳原子; 和（b）重均分子量为8,000〜25,000，分子量分布（Mw / Mn）为1.5以下的聚羟基苯乙烯，其中10〜60摩尔％的羟基已被叔丁氧羰基氧基 团体 该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于 底物。 该组合物可用于在制造超LSI时形成精细图案。
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公开(公告)号：US5929271A
公开(公告)日：1999-07-27
申请号：US912123
申请日：1997-08-15
申请人： Hideo Hada , Kazufumi Sato , Hiroshi Komano , Toshimasa Nakayama
发明人： Hideo Hada , Kazufumi Sato , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： C07C69/013 , G03F7/004 , G03F7/039 , C07C69/74
CPC分类号： C07C69/013 , G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/122
摘要： Proposed is novel compounds for use in a chemical-sensitization positive-working photoresist composition used in the photolithographic patterning process for the manufacture of fine electronic devices, which is capable of giving, with high photosensitivity to ArF excimer laser beams, a patterned resist layer having an excellently orthogonal cross sectional profile and high resistance against dry etching and exhibiting good adhesion to the substrate surface. While the composition comprises (A) a film-forming resinous ingredient which causes an increase of alkali solubility by interacting with an acid and (B) a radiation-sensitive acid-generating agent, the most characteristic feature of the invention consists in the use of a specific acrylic resin as the component (A), which comprises the monomeric units of a (meth)acrylic acid ester of hydroxy bicyclo�3.1.1!heptanone unsubstituted or substituted by an alkyl group such as hydroxypinanone (meth)acrylate, optionally, in combination with the monomeric units derived from (meth)acrylic acid and/or tert-butyl (meth)acrylate in a molar fraction of 3:7 to 7:3.
摘要翻译： 提出了用于制造精细电子器件的光刻图案化方法中使用的化学增感正性光致抗蚀剂组合物中的新化合物，其能够赋予ArF准分子激光束具有高光敏性的图案化抗蚀剂层，其具有 具有优异的正交横截面轮廓和高耐干腐蚀性，并且对基材表面表现出良好的粘合性。 虽然组合物包含（A）通过与酸相互作用引起碱溶解度增加的成膜树脂成分和（B）辐射敏感的酸产生剂，但是本发明的最特征在于使用 作为组分（A）的特定丙烯酸树脂，其包含未被取代或被烷基如羟基酮（甲基）丙烯酸酯取代的羟基双环[3.1.1]庚酮的（甲基）丙烯酸酯的单体单元， 与来自（甲基）丙烯酸和/或（甲基）丙烯酸叔丁酯的单体单元组合，摩尔分数为3:7至7:3。
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公开(公告)号：US5925495A
公开(公告)日：1999-07-20
申请号：US924260
申请日：1997-09-05
申请人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
发明人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/09 , G03F7/11 , H01L21/027 , H01L21/302 , H01L21/3065 , G03C1/492
CPC分类号： G03F7/091 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： A proposal is made for the photolithographic formation of a patterned resist layer on a substrate without the troubles due to reflection of the exposure light on the substrate surface. Thus, patterning is conducted on a photoresist laminate comprising (a) a substrate; (b) a specific anti-reflection coating layer formed on one surface of the substrate; and (c) a photoresist layer formed on the anti-reflection coating layer from a specific negative-working chemical-sensitization photoresist composition comprising an oxime sulfonate acid generating agent. The patterning procedure comprises the steps of: (A) exposing, pattern-wise to actinic rays, the photoresist layer of the photoresist laminate; (B) subjecting the photoresist layer to a heat treatment; (C) subjecting the photoresist layer to a development treatment to dissolve away the photoresist layer in the areas unexposed to actinic rays in step (A) so as to expose bare the anti-reflection coating layer in the areas unexposed to the actinic rays leaving a patterned resist layer in the areas exposed to the actinic rays; and (D) removing the pattern-wise exposed anti-reflection coating layer by dry etching with the patterned photoresist layer as a mask.
摘要翻译： 提出了在基板上的图案化抗蚀剂层的光刻形成，而不会由于基板表面上的曝光光的反射而引起的问题。 因此，在包含（a）基底的光致抗蚀剂层压件上进行图案化; （b）形成在所述基板的一个表面上的特定抗反射涂层; 以及（c）由抗反酸涂层形成的抗氧化剂层，其特征在于包含肟磺酸生成剂的特定负性化学增感光致抗蚀剂组合物。 图案化步骤包括以下步骤：（A）以光致抗蚀剂层压板的光致抗蚀剂层将光致抗蚀剂层以图形方式曝光于光化射线; （B）对光致抗蚀剂层进行热处理; （C）在步骤（A）中对光致抗蚀剂层进行显影处理以将光致抗蚀剂层溶解在未暴露于光化射线的区域中，以便露出未暴露于光化离子的区域中的防反射涂层 在暴露于光化射线的区域中的图案化抗蚀剂层; 和（D）通过用图案化的光致抗蚀剂层作为掩模的干蚀刻去除图案化的曝光的抗反射涂层。
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