摘要:
Techniques for inspecting semiconductor devices. An inspection condition using chip matrix data and chip size data is set. The intricate circuit patterns of at least one semiconductor device is inspected with the inspection condition. In an embodiment of the present invention, inspection uses images formed by the irradiation of white light, a laser light, or an electron beam. Data obtained from the inspection is used to generate a revised inspection condition. Semiconductor devices are inspected using the revised inspection condition.
摘要:
An apparatus and method for detecting foreign particle and defect on an object in detection by means of a laser beam, in which the laser beams of different wavelengths are irradiated onto the surface of the object in detection from different angles and the state of foreign particle and defect is separately detected according to the output level of the scattered light reflected from that surface. Further, it is arranged such that the scattered light reflected from the object onto which the laser beam is irradiated from the sole source or the plurality of sources is detected in plural directions, which detecting result is compared for the detection of the directivity of said scattered light in reflection.
摘要:
A semiconductor device producing method and a semiconductor device producing system employs a processing apparatus provided with a dust particle detecting apparatus. The dust particle detecting apparatus measures the condition of adhesion of dust particles adhering to a work at least before or after processing the work, manages the condition of incremental adhesion of dust particles to the work resulting from processing for each lot of works or for each work on the basis of the measured condition of adhesion of dust particles measured before or after processing the work, and determines the time when the processing apparatus is to be cleaned or the cycle of cleaning the processing apparatus on the basis of the managed condition of adhesion of dust particles.
摘要:
A defect-inspecting apparatus including an arrangement to convert detected light into a first signal corresponding to light illuminated by a high-angle illumination optical system and/or a second signal corresponding to light illuminated by a low-angle illumination optical system; and a classification unit which utilizes the first and second signal and classifies defects on the object to be inspected, wherein a defect size is estimated by changing a correction coefficient of the defect size on a basis of a concave-convex level (b/a), where the concave-convex level (b/a) of a defect is indicated by a ratio of a size b of a first direction of the defect to a size a of a second direction of the defect, where the second direction is lateral to the first direction.
摘要:
A defect-inspecting apparatus including an arrangement to convert detected light into a first signal corresponding to light illuminated by a high-angle illumination optical system and/or a second signal corresponding to light illuminated by a low-angle illumination optical system; and a classification unit which utilizes the first and second signal and classifies defects on the object to be inspected, wherein a defect size is estimated by changing a correction coefficient of the defect size on a basis of a concave-convex level (b/a), where the concavo-convex level (b/a) of a defect is indicated by a ratio of a size b of a first direction of the defect to a size a of a second direction of the defect, where the second direction is lateral to the first direction.
摘要:
The present invention is characterized by the following: incident illumination and oblique illumination are performed on a scratch and a foreign material, which have been made on a surface of a polished or a ground insulating layer, with substantially the same luminous flux; and on the basis of a correlation such as a ratio of intensity of scattered light generated by the shallow scratch and the foreign material between the incident illumination and the oblique illumination, the shallow scratch is discriminated from the foreign material.
摘要:
A defect-inspecting apparatus including an arrangement to convert detected light into a first signal corresponding to light illuminated by a high-angle illumination optical system and/or a second signal corresponding to light illuminated by a low-angle illumination optical system; and a classification unit which utilizes the first and second signal and classifies defects on the object to be inspected, wherein a defect size is estimated by changing a correction coefficient of the defect size on a basis of a concave-convex level (b/a), where the concavo-convex level (b/a) of a defect is indicated by a ratio of a size b of a first direction of the defect to a size a of a second direction of the defect, where the second direction is lateral to the first direction.
摘要:
A defect-inspecting apparatus including an arrangement to convert detected light into a first signal corresponding to light illuminated by a high-angle illumination optical system and/or a second signal corresponding to light illuminated by a low-angle illumination optical system; and a classification unit which utilizes the first and second signal and classifies defects on the object to be inspected, wherein a defect size is estimated by changing a correction coefficient of the defect size on a basis of a concave-convex level (b/a), where the concavo-convex level (b/a) of a defect is indicated by a ratio of a size b of a first direction of the defect to a size a of a second direction of the defect, where the second direction is lateral to the first direction.
摘要:
An apparatus and method for detecting defects on a specimen includes an illumination optical unit which obliquely projects a laser onto a region which is longer in one direction on a surface of a specimen than in a transverse direction, a table unit which mounts the specimen and which is movable, a detection optical unit which detects light from the specimen illuminated by the laser with an image sensor while the table is moving, and a signal processor. The signal processor processes a signal outputted from the image sensor of the detection optical unit and converted to a digital signal and extracts defects of the specimen by comparing the converted digital signal with a reference digital signal. A display unit displays information of defects extracted by the signal processor.
摘要:
A processing method for semiconductor devices in a semiconductor fabrication line includes processing a substrate in a first processing apparatus, transferring the substrate processed in the first processing apparatus to a detecting apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices, detecting foreign particle defects on the substrate transferred to the detecting apparatus, and determining a foreign particle generation condition of the processing apparatus based on a data from the detecting.