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68 条记录 (耗时 0.025 秒)

    Cold rolled steel sheet and method of making
    61.
    发明授权
    Cold rolled steel sheet and method of making 失效
    冷轧钢板及其制造方法

    公开(公告)号：US6027581A

    公开(公告)日：2000-02-22

    申请号：US935600

    申请日：1997-09-23

    申请人： Kazunori Osawa ,  Masahiko Morita ,  Osamu Furukimi ,  Takashi Obara

    发明人： Kazunori Osawa ,  Masahiko Morita ,  Osamu Furukimi ,  Takashi Obara

    IPC分类号： C21D8/04 ,  C21D9/48 ,  C22C38/00 ,  C22C38/06 ,  C22C38/14

    CPC分类号： C21D8/0426 ,  C21D9/48 ,  C22C38/001 ,  C22C38/06 ,  C22C38/14

    摘要： Cold rolled steel sheet with excellent deep drawability and excellent anti-aging properties, and manufacturing method. The cold rolled steel sheet comprises about C: above 0.015 to 0.150 wt %, Si: 1.0 wt % or less, Mn: 0.01 to 1.50 wt %, P: 0.10 wt % or less, S: 0.003 to 0.050 wt %, Al: 0.001 to below 0.010 wt %, N: 0.0001 to 0.0050 wt %, Ti: 0.001 wt % or more and Ti(wt %)/[1.5.times.S(wt %)+3.4.times.N(wt %)].ltoreq.about 1.0 and B: about 0.0001 to 0.0050 wt %, during annealing, grain growth is improved; Ti is added to form a nitride and a sulfide to avoid precipitation of fine TiC; B is added to precipitate Boron precipitates (Fe.sub.2 B, Fex(C,B)y) in a cooling the hot rolled steel sheet and in cooling step during annealing after cold rolling; a spherical cementite is precipitated and grown in which the Boron series precipitate is a precipitation site.

    摘要翻译： 具有优异的深冲性和优异的抗老化性能的冷轧钢板及其制造方法。 冷轧钢板的C：大于0.015〜0.150重量％，Si：1.0重量％以下，Mn：0.01〜1.50重量％，P：0.10重量％以下，S：0.003〜0.050重量％，Al： 0.001〜0.010重量％，N：0.0001〜0.0050重​​量％，Ti：0.001重量％以上，Ti（重量％）/ [1.5×S（重量％）+ 3.4×N（重量％）] B：约0.0001〜0.0050重​​量％，退火时晶粒生长提高; 添加Ti以形成氮化物和硫化物以避免细小TiC的沉淀; 加入B以冷却热轧钢板并在冷轧后退火时的冷却步骤中沉淀硼析出物（Fe2B，Fex（C，B）y） 析出并生长球状渗碳体，其中硼系沉淀是沉淀点。

    Semiconductor integrated circuit device having low-power consumption signal input circuit responsive to high-speed small-amplitude input signal
    64.
    发明授权
    Semiconductor integrated circuit device having low-power consumption signal input circuit responsive to high-speed small-amplitude input signal 失效
    具有响应于高速小振幅输入信号的低功耗信号输入电路的半导体集成电路器件

    公开(公告)号：US5469386A

    公开(公告)日：1995-11-21

    申请号：US296164

    申请日：1994-08-25

    申请人： Takashi Obara

    发明人： Takashi Obara

    IPC分类号： G11C11/407 ,  G11C11/403 ,  G11C11/406 ,  G11C11/4076 ,  G11C11/409 ,  G11C7/00

    CPC分类号： G11C11/406 ,  G11C11/4076

    摘要： A semiconductor synchronous dynamic random access memory device is responsive to a clock signal and a clock enable signal for selectively carrying out internal sequences such as a read-out sequence, a write-in sequence and a self-refreshing sequence, and a signal input unit assigned to the clock enable signal has a complementary logic gate type signal input circuit enabled in a self-refreshing sequence for receiving the clock enable signal and a current-mirror type signal input circuit enabled in other sequences for receiving the clock enable signal so that the current consumption of the signal input unit is decreased during the self-refreshing sequence.

    摘要翻译： 半导体同步动态随机存取存储器件响应于时钟信号和时钟使能信号，用于选择性地执行诸如读出序列，写入序列和自刷新序列之类的内部序列，以及信号输入单元 分配给时钟使能信号的互补逻辑门型信号输入电路在自刷新序列中使能，用于接收时钟使能信号，并且电流镜型信号输入电路以其他顺序使能以接收时钟使能信号，使得 信号输入单元的电流消耗在自刷新序列期间减少。

    Semiconductor memory device having diagnostic circuit for comparing multi-bit read-out test data signal with multi-bit write-in test data signal stored in serial-input shift register
    65.
    发明授权
    Semiconductor memory device having diagnostic circuit for comparing multi-bit read-out test data signal with multi-bit write-in test data signal stored in serial-input shift register 失效
    具有用于将多位读出测试数据信号与存储在串行输入移位寄存器中的多位写入测试数据信号进行比较的诊断电路的半导体存储器件

    公开(公告)号：US5406566A

    公开(公告)日：1995-04-11

    申请号：US139717

    申请日：1993-10-22

    申请人： Takashi Obara

    发明人： Takashi Obara

    IPC分类号： G11C29/00 ,  G01R31/28 ,  G11C29/32 ,  G11C29/34 ,  G11C29/38

    CPC分类号： G11C29/32 ,  G11C29/38

    摘要： A dynamic random access memory device is subjected to a diagnosis upon completion of fabrication to see whether or not a defective memory cell is incorporated in memory cell sub-arrays, one of the input/output data buffer circuits incorporated therein transfers test bits in serial to a shift register which in turn transfers the test bits in parallel to data line pairs for writing the test bits into the memory cell sub-arrays, and a comparator compares the test bits read out from the memory cell sub-arrays with the test bit stored in the shift register for producing a diagnostic signal indicative of consistence or inconsistence between the test bits read out from the memory cell sub-arrays and the test bits in the shift register, thereby allowing an external diagnostic system with data pins less than the input/output data buffer circuits to carry out the diagnosis.

    摘要翻译： 动态随机存取存储器件在完成制造后进行诊断，以查看存储单元子阵列中是否存在有缺陷的存储单元，其中并入的输入/输出数据缓冲电路之一将测试位串联传送到 移位寄存器又将测试位并行地传送到用于将测试位写入存储单元子阵列的数据线对，并且比较器将从存储单元子阵列读出的测试位与存储的测试位进行比较 在移位寄存器中用于产生指示从存储器单元子阵列读出的测试位与移位寄存器中的测试位之间的一致性或不一致性的诊断信号，从而允许外部诊断系统的数据引脚小于输入/ 输出数据缓冲电路进行诊断。

    Random access memory device with nibble mode operation
    66.
    发明授权
    Random access memory device with nibble mode operation 失效
    具有半字节模式操作的随机存取存储器件

    公开(公告)号：US4875189A

    公开(公告)日：1989-10-17

    申请号：US149282

    申请日：1988-01-28

    申请人： Takashi Obara

    发明人： Takashi Obara

    IPC分类号： G11C7/00 ,  G11C7/10 ,  G11C8/04 ,  G11C11/401

    CPC分类号： G11C8/04 ,  G11C7/1033

    摘要： For improving controllability and simplifying the circuit arrangement, there is disclosed a random access memory device comprising a nibble decoder circuit operative to control nibble switching transistors and a read/write control circuit operative to control read/write switching circuits and data amplifier circuits independent from the nibble decoder circuit, and three data bits read out from memory cell arrays are transferred to the same memory cell arrays when a new data bit is written into the a memory cell of the other memory cell array directly accessed by an external processor, thereby preventing the data bits from destruction.

    Method of manufacturing T-3 grade low temper black plates
    68.
    发明授权
    Method of manufacturing T-3 grade low temper black plates 失效
    制造T-3级低温黑板的方法

    公开(公告)号：US4561909A

    公开(公告)日：1985-12-31

    申请号：US551503

    申请日：1983-11-14

    申请人： Hideo Sunami ,  Hideo Kuguminato ,  Yoshio Izumiyama ,  Fumiya Yanagishima ,  Takashi Obara ,  Kazuo Mochizuki

    发明人： Hideo Sunami ,  Hideo Kuguminato ,  Yoshio Izumiyama ,  Fumiya Yanagishima ,  Takashi Obara ,  Kazuo Mochizuki

    IPC分类号： C22C38/00 ,  C21D8/02 ,  C21D9/46 ,  C21D9/52 ,  C22C38/06

    CPC分类号： C21D8/0273 ,  C21D9/52 ,  C21D8/0226 ,  C21D8/0236

    摘要： A method of manufacturing T-3 grade low temper blackplates having an excellent corrosion resistance by a continuous annealing process. In this method, after a continuously cast slab of low carbon aluminum killed steel consisting of 0.02-0.09% of C, not more than 0.04% of Si, 0.15-0.40% of Mn, 0.003-0.02% of soluble Al, not more than 0.0040% in total of N and the balance of Fe and inevitable impurities is subjected to hot rolling, coiled at a temperature of less than 580.degree. C., pickled and subjected to cold rolling, the resulting cold-rolled strip is subjected to such a continuous annealing that the strip is maintained at a temperature above 680.degree. C. for at least 20 seconds, quenched up to a temperature below 500.degree. C. at a cooling rate of 10.degree.-500.degree. C./sec, maintained at a temperature of 350.degree.-500.degree. C. for at least 20 seconds and cooled to room temperature.

    摘要翻译： 通过连续退火工艺制造具有优异耐腐蚀性的T-3级低温黑板的方法。 在该方法中，在由0.02-0.09％的C，不超过0.04％的Si，0.15-0.40％的Mn，0.003-0.02％的可溶性Al组成的低碳铝杀死钢的连续铸造板坯之后，不大于 将总计0.0040％的N和余量的Fe和不可避免的杂质进行热轧，在低于580℃的温度下卷取，酸洗并进行冷轧，将得到的冷轧带材 连续退火，将条保持在高于680℃的温度下至少20秒，以10℃-500℃/秒的冷却速率淬火至低于500℃的温度，保持在温度 350℃-500℃至少20秒，并冷却至室温。