摘要:
In order to provide a full-automatic scanning electron microscope which carries out investigation jobs full-automatically from fine adjustment to reviewing, the scanning electron microscope of the present invention has a function of calculating the accuracy of correction after correction of coordinates and displaying it with vectors 39, a function of automatically determining a searching magnification for automatic object detection from the obtained information after correction of coordinates, and a function of calculating the frequency of occurrence of objects or defects and a time required for measurement from the searching magnification and conditions of measurement.
摘要:
In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to an inverse tapered profile, one of the following observation methods is employed to obtain observation data: (1) a tilt image of a resist pattern is imaged by using tilt imaging electron microscopy, (2) an electron beam image of a resist pattern is imaged under imaging conditions for generating asymmetry on an electron beam signal waveform, and (3) scattering characteristic data of a resist pattern is obtained by an optical measurement system. The observation data is applied to model data created beforehand in accordance with the exposure conditions to estimate fluctuations in the exposure dose and the focal position.
摘要:
In order to accurately monitor changes in exposure conditions (changes in exposure level and focus) at a product wafer level during lithography, changes in exposure conditions can be calculated by acquiring electron beam images of a first pattern portion and a second pattern portion different from one another in terms of the tendency of the changes in dimensional characteristic quantities against the changes in exposure conditions, then calculating the respective dimensional characteristic quantities of the first pattern portion and the second pattern portion, and applying these dimensional characteristic quantities to the models which logically link the exposure conditions and the dimensional characteristic quantities. Hereby, it is possible to supply the process conditions change monitoring systems and methods that enable output of accurate changes in exposure level and focus.
摘要:
To enable SEM-based management of a cross-sectional shape or manufacturing process parameters of a semiconductor device pattern to be measured, the association between the shape or parameters and SEM image characteristic quantities effective for estimating the shape or parameters is saved as learning data. The image characteristic quantities are collated with learning data to estimate the shape or to monitor the process parameters. Accuracy and reliability is achievable by calculating three kinds of reliability (reliability of the image characteristic quantities, reliability of estimation engines, and reliability of estimating results) based on the distribution of the image characteristic quantities and then judging whether additional learning is necessary, or selecting and adjusting image characteristic quantities and estimation engine based on the reliability.
摘要:
In an imaging recipe creating apparatus that uses a scanning electron microscope to create an imaging recipe for SEM observation of a semiconductor pattern, in order that the imaging recipe for measuring the wiring width and other various dimension values of the pattern from an observation image and thus evaluating the shape of the pattern is automatically generated within a minimum time by the analysis using the CAD image obtained by conversion from CAD data, an CAD image creation unit that creates the CAD image by converting the CAD data into an image format includes an image-quantizing width determining section, a brightness information providing section, and a pattern shape deformation processing section; the imaging recipe being created using the CAD image created by the CAD image creation unit.
摘要:
In an imaging recipe creating apparatus that uses a scanning electron microscope to create an imaging recipe for SEM observation of a semiconductor pattern, in order that the imaging recipe for measuring the wiring width and other various dimension values of the pattern from an observation image and thus evaluating the shape of the pattern is automatically generated within a minimum time by the analysis using the CAD image obtained by conversion from CAD data, an CAD image creation unit that creates the CAD image by converting the CAD data into an image format includes an image-quantizing width determining section, a brightness information providing section, and a pattern shape deformation processing section; the imaging recipe being created using the CAD image created by the CAD image creation unit.
摘要:
An object of the present invention is to provide means for solving troubles. Examples of the troubles include sensitivity degradation and resolution degradation of a mass spectrometer, which are caused by an axis deviation of a component, particularly at least one orifice located between an ion source and a detector, to decrease the number of ions reaching the detector, and a variation in performance caused by exchange of components such as the orifice.For example, the invention has the following configuration in order to solve the troubles. A mass spectrometer includes: an ion source; a detector that detects an ion; an orifice and a mass separator that are disposed between the ion source and the detector; and an axis adjusting mechanism that adjusts axis positions of the orifice and/or the mass separator such that an opening of the orifice and/or an incident port of the mass separator is disposed on a line connecting the ion source and an incident port of the detector.
摘要:
To enable SEM-based management of a cross-sectional shape or manufacturing process parameters of a semiconductor device pattern to be measured, the association between the shape or parameters and SEM image characteristic quantities effective for estimating the shape or parameters is saved as learning data. The image characteristic quantities are collated with learning data to estimate the shape or to monitor the process parameters. Accuracy and reliability is achievable by calculating three kinds of reliability (reliability of the image characteristic quantities, reliability of estimation engines, and reliability of estimating results) based on the distribution of the image characteristic quantities and then judging whether additional learning is necessary, or selecting and adjusting image characteristic quantities and estimation engine based on the reliability.
摘要:
A method is provided for estimating a cross-sectional shape or for monitoring manufacturing process parameters of a semiconductor device pattern to be measured. In this method, in order to enable SEM-based management of the cross-sectional shape or manufacturing process parameters of the pattern to be measured, the association between the cross-sectional shape or process parameters of the pattern and SEM image characteristic quantities effective for estimating the cross-sectional shape or process parameters of the pattern, is saved as learning data, and then the image characteristic quantities that have been calculated from a SEM image of the pattern are collated with the learning data to estimate the cross-sectional shape or to monitor process parameters of the pattern. Estimation with high accuracy and reliability is achievable by calculating all or part of three kinds of reliability (reliability of the image characteristic quantities, reliability of estimation engines, and reliability of estimating results) based on the distribution of the image characteristic quantities and judging from the calculated reliability whether additional learning of the learning data is necessary, or selecting and adjusting image characteristic quantities and estimation engine based on the reliability.
摘要:
The mass spectrometer includes an ion source; a mass spectrometry part; a sample container; a heater for the sample container; a first gas tube connected to the sample container to introduce a gas into the sample container; and a second gas tube connected to the sample container to transfer a headspace gas of the sample container to the ion source, in which the ion source generates ions of the headspace gas and the mass spectrometry part performs mass spectrometry of the ions.Thereby, the mass spectrometer as a drug detection equipment can analyze various drugs in urine rapidly and with high sensitivity.