公开(公告)号：US20110286275A1

公开(公告)日：2011-11-24

申请号：US13112443

申请日：2011-05-20

申请人： Sang-hun Jeon ,  Ho-jung Kim

发明人： Sang-hun Jeon ,  Ho-jung Kim

IPC分类号： G11C16/04 ,  H01L21/28

CPC分类号： H01L27/11551 ,  G11C16/0483 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11578 ,  H01L29/7889 ,  H01L29/7926

摘要： A stacked memory device may include at least one memory unit and at least one peripheral circuit unit arranged either above or below the at least one memory unit. The at least one memory unit may include a memory string array, a plurality of bit lines, and a plurality of string selection pads. The memory string may include a plurality of memory strings arranged in a matrix and each of the memory strings may include a plurality of memory cells and a string selection device arranged perpendicular to a substrate. The plurality of bit lines may extend in a first direction and may be connected to ends of the plurality of memory strings. The plurality of string selection pads may be arrayed in a single line along the first direction and may be connected to the string selection devices included in the plurality of memory strings.

摘要翻译： 堆叠式存储器件可以包括至少一个存储器单元和布置在至少一个存储器单元的上方或下方的至少一个外围电路单元。 所述至少一个存储器单元可以包括存储器串阵列，多个位线以及多个串选择焊盘。 存储器串可以包括排列成矩阵的多个存储器串，并且每个存储器串可以包括多个存储单元和垂直于衬底布置的串选择装置。 多个位线可以在第一方向上延伸并且可以连接到多个存储器串的端部。 多个串选择板可以沿着第一方向排列成单行，并且可以连接到包括在多个存储器串中的串选择装置。

公开(公告)号：US20080157186A1

公开(公告)日：2008-07-03

申请号：US11980352

申请日：2007-10-31

申请人： Wan-jun Park ,  Jo-won Lee ,  Sang-hun Jeon ,  Chung-woo Kim

发明人： Wan-jun Park ,  Jo-won Lee ,  Sang-hun Jeon ,  Chung-woo Kim

IPC分类号： H01L29/792

CPC分类号： H01L21/28273 ,  H01L21/28282

摘要： A non-volatile memory device including a metal-insulator transition (MIT) material is provided. The non-volatile memory device includes a gate stack having a tunneling layer, a charge trap layer, a blocking layer and a gate electrode formed on a substrate, wherein at least one of the tunneling layer and the blocking layer is formed of an MIT (metal-insulator transition) material.

摘要翻译： 提供了包括金属 - 绝缘体转变（MIT）材料的非易失性存储器件。 非易失性存储器件包括具有隧道层，电荷陷阱层，形成在衬底上的阻挡层和栅电极的栅极堆叠，其中隧道层和阻挡层中的至少一个由MIT形成 金属 - 绝缘体转变）材料。

公开(公告)号：US20060077743A1

公开(公告)日：2006-04-13

申请号：US11245426

申请日：2005-10-07

申请人： Sang-hun Jeon ,  Chung-woo Kim ,  Hyun-sang Hwang

发明人： Sang-hun Jeon ,  Chung-woo Kim ,  Hyun-sang Hwang

IPC分类号： G11C7/00

CPC分类号： H01L21/28273 ,  H01L29/513 ,  H01L29/7881

摘要： Memory devices and methods of manufacturing the same are provided. Memory devices may include a substrate, a source region and a drain region and a gate structure. The gate structure may be in contact with the source and drain regions, and may include a barrier layer. The barrier layer may be formed of at least two layers. The at least two layers may have different bandgap energies.

摘要翻译： 提供了存储器件及其制造方法。 存储器件可以包括衬底，源极区域和漏极区域以及栅极结构。 栅极结构可以与源极和漏极区域接触，并且可以包括阻挡层。 阻挡层可以由至少两层形成。 至少两层可能具有不同的带隙能量。

公开(公告)号：US20050205920A1

公开(公告)日：2005-09-22

申请号：US11070090

申请日：2005-03-03

申请人： Sang-hun Jeon ,  Chung-woo Kim ,  Dong-joon Ma ,  Sung-kyu Choi

发明人： Sang-hun Jeon ,  Chung-woo Kim ,  Dong-joon Ma ,  Sung-kyu Choi

IPC分类号： H01L21/8247 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L27/10 ,  H01L27/108 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L31/119

CPC分类号： H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/28282 ,  H01L21/31616 ,  H01L21/31645 ,  H01L28/56 ,  H01L29/513 ,  H01L29/792

摘要： A SONOS type memory includes a semiconductor substrate, first and second impurity regions in the semiconductor substrate doped with impurity ions of a predetermined conductivity, separated a predetermined distance from each other, a channel region between the first and second impurity regions, and a data storage type stack on the semiconductor substrate between the first and second impurity regions. The data storage type stack includes a tunneling oxide layer, a memory node layer for storing data, a blocking oxide layer, and an electrode layer, which are sequentially formed. A dielectric constant of the memory node layer is higher than dielectric constants of the tunneling and the blocking oxide layers, and a band offset of the memory node layer is lower than band offsets of the tunneling and the blocking oxide layers. The tunneling oxide layer and the blocking oxide layer are high dielectric insulating layers.

摘要翻译： SONOS型存储器包括半导体衬底，掺杂有预定电导率的杂质离子的半导体衬底中的第一和第二杂质区，彼此隔开预定距离，第一和第二杂质区之间的沟道区，以及数据存储 在第一和第二杂质区之间的半导体衬底上。 数据存储型堆叠包括依次形成的隧道氧化物层，用于存储数据的存储节点层，阻挡氧化物层和电极层。 存储节点层的介电常数高于隧道和阻塞氧化物层的介电常数，并且存储器节点层的带偏移低于隧道和阻塞氧化物层的带偏移。 隧道氧化物层和阻挡氧化物层是高介电绝缘层。