公开(公告)号：US08217347B2

公开(公告)日：2012-07-10

申请号：US13021226

申请日：2011-02-04

申请人： Vadim Yevgenyevich Banine ,  Levinus Pieter Bakker ,  Ralph Kurt ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Peter Cornelis Zalm

发明人： Vadim Yevgenyevich Banine ,  Levinus Pieter Bakker ,  Ralph Kurt ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Peter Cornelis Zalm

IPC分类号： G01N23/00

CPC分类号： G01N25/142 ,  G01N25/68 ,  Y10T436/25875

摘要： A system for detecting at least one contamination species in an interior space of a lithographic apparatus, including: at least one monitoring surface configured to be in contact with the interior space, a thermal controller configured to control the temperature of the monitoring surface to at least one detection temperature, and at least one detector configured to detect condensation of the at least one contamination species onto the monitoring surface.

摘要翻译： 一种用于检测光刻设备的内部空间中的至少一种污染物质的系统，包括：被配置为与所述内部空间接触的至少一个监测表面;被配置为将所述监测表面的温度控制在至少 一个检测温度，以及至少一个检测器，被配置为检测所述至少一种污染物质到所述监测表面上的冷凝。

公开(公告)号：US07935218B2

公开(公告)日：2011-05-03

申请号：US11643955

申请日：2006-12-22

申请人： Johannes Hubertus Josephina Moors ,  Vadim Yevgenyevich Banine ,  Bastiaan Theodoor Wolschrijn ,  Carolus Ida Maria Antonius Spee ,  Rik Jansen

发明人： Johannes Hubertus Josephina Moors ,  Vadim Yevgenyevich Banine ,  Bastiaan Theodoor Wolschrijn ,  Carolus Ida Maria Antonius Spee ,  Rik Jansen

IPC分类号： C23F1/00

CPC分类号： G03F7/2043 ,  G03F7/70041 ,  G03F7/70925

摘要： An optical apparatus includes an illumination system configured to form a pulsed radiation beam, an optical element with a surface on which the radiation beam is incident in operation, and a gas source arranged to supply a mixture of a first type of gas and a second type of gas to a space adjacent the surface. Particles of the first and second types of gas are capable of reacting with the surface, when activated by the radiation beam. The gas source is configured to generate a combination of surface occupation numbers of molecules of the first and second types of gas on the surface under operating conditions, at least prior to pulses of the radiation beam, the combination of surface occupation numbers lying in a range in which reactions of particles with the surface during pulses of the radiation beam are in majority reversed.

摘要翻译： 光学装置包括被配置为形成脉冲辐射束的照明系统，具有辐射束在其中入射的表面的光学元件，以及设置成供应第一类型气体和第二类型的混合物的气体源 的气体到邻近表面的空间。 当由辐射束激活时，第一和第二类气体的颗粒能够与表面反应。 气源被配置成至少在辐射束的脉冲之前，在工作条件下，在表面上产生第一和第二类气体的分子的表面占有数量的组合，表面占有数的组合在一个范围内 其中在辐射束的脉冲期间颗粒与表面的反应多数反转。

公开(公告)号：US07812330B2

公开(公告)日：2010-10-12

申请号：US12289884

申请日：2008-11-06

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： H05G2/00

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以配置在设备内的特定位置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。

公开(公告)号：US07800079B2

公开(公告)日：2010-09-21

申请号：US10740829

申请日：2003-12-22

申请人： Vadim Yevgenyevich Banine ,  Levinus Pieter Bakker ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Yurii Victorvitch Sidelnikov ,  Marcel Mathijs Theodore Marie Dierichs ,  Marius Ravensbergen

发明人： Vadim Yevgenyevich Banine ,  Levinus Pieter Bakker ,  Johannes Hubertus Josephina Moors ,  Lucas Henricus Johannes Stevens ,  Yurii Victorvitch Sidelnikov ,  Marcel Mathijs Theodore Marie Dierichs ,  Marius Ravensbergen

IPC分类号： G21G5/00

CPC分类号： G03F7/70916 ,  G03F7/7085

摘要： An assembly for detection of at least one of radiation flux and contamination on an optical component includes a detector configured to receive at least one of the radiation flux and contamination, and when the assembly is in use, to generate a detector signal correlated to at least one of the radiation flux and contamination on the component. A meter is configured to measure the detector signal. The detector includes at least one wire.

摘要翻译： 用于检测光学部件上的辐射通量和污染物中的至少一种的组件包括被配置为接收辐射通量和污染物中的至少一种的检测器，并且当使用该组件时，生成与至少相关的检测器信号 辐射通量和部件污染之一。 仪表被配置为测量检测器信号。 检测器包括至少一根线。

公开(公告)号：US07462850B2

公开(公告)日：2008-12-09

申请号：US11296702

申请日：2005-12-08

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： H05G2/00

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以在设备内的特定位置进行配置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。

公开(公告)号：US20080259298A1

公开(公告)日：2008-10-23

申请号：US11785745

申请日：2007-04-19

申请人： Vadim Yevgenyevich Banine ,  Arno Jan Bleeker ,  Johannes Hubertus Josephina Moors

发明人： Vadim Yevgenyevich Banine ,  Arno Jan Bleeker ,  Johannes Hubertus Josephina Moors

IPC分类号： G03B27/42

CPC分类号： G03F7/70291 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70191

摘要： A lithographic apparatus for maskless EUV applications includes an illumination system constructed and arranged to condition a radiation beam and to supply the conditioned radiation beam to a spatial light modulator, a substrate table constructed and arranged to hold a substrate, and a projection system constructed and arranged to project the conditioned radiation beam onto a target portion of the substrate. The illumination system includes a field facet mirror constructed and arranged to define a field of the conditioned radiation beam. The field facet mirror is constructed and arranged to optically match a source of radiation and the illumination system.

摘要翻译： 用于无掩模EUV应用的光刻设备包括被构造和布置成调节辐射束并且将经调节的辐射束提供给空间光调制器的照明系统，被构造和布置成保持衬底的衬底台，以及构造和布置的投影系统 以将调节的辐射束投影到基板的目标部分上。 照明系统包括构造和布置成限定经调节的辐射束的场的场面反射镜。 场面反射镜被构造和布置成光学匹配辐射源和照明系统。

公开(公告)号：US07279690B2

公开(公告)日：2007-10-09

申请号：US11094490

申请日：2005-03-31

申请人： Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Bastiaan Matthias Mertens ,  Johannes Hubertus Josephina Moors ,  Frank Jeroen Pieter Schuurmans ,  Givi Georgievitch Zukavishvili ,  Bastiaan Theodoor Wolschrijn ,  Marc Hubertus Lorenz Van Der Velden

发明人： Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Bastiaan Matthias Mertens ,  Johannes Hubertus Josephina Moors ,  Frank Jeroen Pieter Schuurmans ,  Givi Georgievitch Zukavishvili ,  Bastiaan Theodoor Wolschrijn ,  Marc Hubertus Lorenz Van Der Velden

IPC分类号： H05H3/00

CPC分类号： G03F7/70933 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70916

摘要： A lithographic apparatus is arranged to project a beam from a radiation source onto a substrate. The apparatus includes an optical element in a path of the beam, a gas inlet for introducing a gas into the path of the beam so that the gas will be ionized by the beam to create electric fields toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold of kinetic energy for sputtering the optical element that is greater than the kinetic energy developed by ions of the gas in the electric fields.

摘要翻译： 光刻设备被布置成将来自辐射源的光束投影到基底上。 该装置包括在光束的路径中的光学元件，用于将气体引入光束的路径中的气体入口，使得气体将被光束离子化以产生朝向光学元件的电场，并且气体源耦合 到用于供应气体的气体入口。 气体具有用于溅射光学元件的动能阈值，其大于由电场中的气体的离子产生的动能。

公开(公告)号：US07167232B2

公开(公告)日：2007-01-23

申请号：US10747613

申请日：2003-12-30

申请人： Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Frank Jeroen Pieter Schuurmans ,  Lucas Henricus Johannes Stevens

发明人： Vadim Yevgenyevich Banine ,  Johannes Peterus Henricus De Kuster ,  Johannes Hubertus Josephina Moors ,  Frank Jeroen Pieter Schuurmans ,  Lucas Henricus Johannes Stevens

IPC分类号： G03B27/42

CPC分类号： G03F7/70908 ,  G03F7/70916

摘要： A lithographic apparatus is disclosed. The lithographic apparatus includes a radiation source that produces EUV radiation, an illumination system that provides a beam of the EUV radiation produced by the radiation source, and a support structure that supports a patterning structure. The patterning structure is configured to impart the beam of radiation with a pattern in its cross-section. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The radiation source includes a debris-mitigation system that mitigates debris particles which are formed during production of EUV radiation. The debris-mitigation system is configured to provide additional particles for interacting with the debris particles.

摘要翻译： 公开了一种光刻设备。 光刻设备包括产生EUV辐射的辐射源，提供由辐射源产生的EUV辐射束的照明系统和支持图案形成结构的支撑结构。 图案形成结构被配置为在其横截面中赋予辐射束图案。 该装置还包括支撑基板的基板支撑件和将图案化的光束投影到基板的目标部分上的投影系统。 辐射源包括减轻在生成EUV辐射期间形成的碎片颗粒的碎片减轻系统。 碎片减轻系统被配置为提供用于与碎屑颗粒相互作用的附加颗粒。

公开(公告)号：US08279397B2

公开(公告)日：2012-10-02

申请号：US12469546

申请日：2009-05-20

申请人： Dirk Heinrich Ehm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Vadim Banine ,  Vladimir Vitalevitsch Ivanov

发明人： Dirk Heinrich Ehm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Vadim Banine ,  Vladimir Vitalevitsch Ivanov

IPC分类号： G03B27/52

CPC分类号： G03F7/70916 ,  G03F7/70925

摘要： A method and an optical arrangement for removing contamination on optical surfaces (26), which are arranged in a vacuum environment in an optical arrangement, preferably in a projection exposure apparatus (1) for EUV lithography. The method includes generating a residual gas atmosphere containing molecular hydrogen (18) and at least one inert gas (17) in the vacuum environment, generating inert gas ions (21) by ionization of the inert gas (17), preferably with EUV radiation (20), and generating atomic hydrogen (27) by acceleration of the inert gas ions (21) in the residual gas atmosphere, to remove the contamination.

摘要翻译： 一种用于去除在光学装置的真空环境中布置的光学表面（26）上的污染的方法和光学装置，优选在用于EUV光刻的投影曝光装置（1）中。 该方法包括在真空环境中产生含有分子氢（18）和至少一种惰性气体（17）的残余气体气氛，通过惰性气体（17）的电离产生惰性气体离子（21），优选用EUV辐射 20），并且通过加热惰性气体离子（21）在残留气体气氛中产生原子氢（27），以除去污染物。

公开(公告)号：US20100288302A1

公开(公告)日：2010-11-18

申请号：US12662840

申请日：2010-05-06

申请人： Dirk Heinrich Ehm ,  Arnold Storm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Thomas Stein ,  Edwin te Sligte

发明人： Dirk Heinrich Ehm ,  Arnold Storm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Thomas Stein ,  Edwin te Sligte

IPC分类号： B08B7/00 ,  B08B5/02

CPC分类号： B08B5/02 ,  B08B7/00 ,  G03F7/70925

摘要： The invention is directed to a method for at least partially removing a contamination layer (15) from an optical surface (14a) of an EUV-reflective optical element (14) by bringing a cleaning gas into contact with the contamination layer. In the method, a jet (20) of cleaning gas is directed to the contamination layer (15) for removing material from the contamination layer (15). The contamination layer (15) is monitored for generating a signal indicative of the thickness of the contamination layer (15) and the jet (20) of cleaning gas is controlled by moving the jet (20) of cleaning gas relative to the optical surface (14a) using this signal as a feedback signal. A cleaning arrangement (19 to 24) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet (20) of cleaning gas and to a corresponding cleaning gas generation arrangement.

摘要翻译： 本发明涉及通过使清洁气体与污染层接触来至少部分地从EUV反射型光学元件（14）的光学表面（14a）去除污染物层（15）的方法。 在该方法中，将清洁气体的喷嘴（20）引导到污染层（15），以从污染层（15）去除材料。 监测污染层（15）以产生指示污染层（15）的厚度的信号，并且通过相对于光学表面移动清洁气体的喷嘴（20）来控制清洁气体的喷射（20） 14a）使用该信号作为反馈信号。 还公开了一种用于执行该方法的清洁装置（19至24）。 本发明还涉及一种用于产生清洁气体的喷嘴（20）和相应的清洁气体产生装置的方法。