公开(公告)号：US09947795B2

公开(公告)日：2018-04-17

申请号：US15388720

申请日：2016-12-22

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Tomoyuki Ariyoshi ,  Akihiro Hanada

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1362

CPC classification number: H01L29/78606 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869

Abstract: According to one embodiment, a thin-film transistor includes a first insulating film, an oxide semiconductor layer provided on the first insulating film and a second insulating film provided on the oxide semiconductor layer, and at least one of the first insulating film and the second insulating film includes a first region in contact with the oxide semiconductor layer and a second region further distant from the oxide semiconductor layer than the first region, and the second region has an argon concentration higher than that of the first region.

公开(公告)号：US09780227B2

公开(公告)日：2017-10-03

申请号：US14944676

申请日：2015-11-18

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Masayoshi Fuchi ,  Hajime Watakabe ,  Takashi Okada ,  Arichika Ishida

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L21/467

CPC classification number: H01L29/7869 ,  H01L21/467 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78696

Abstract: According to one embodiment, a thin-film transistor and a method of manufacturing the thin-film transistor provided herein achieve enhanced reliability by preventing a disconnection in a gate insulating film at a position corresponding to an end surface of an oxide semiconductor layer. The oxide semiconductor layer includes a channel region, a source region, and a drain region. The channel region is placed between the source region and the drain region. The gate insulating film covers the oxide semiconductor layer in a range from at least a part of an upper surface to an end surface continuous with the upper surface of the oxide semiconductor layer. The oxide semiconductor layer is formed so as to have an oxygen concentration that becomes lower from a top side to a bottom side and the end surface is inclined so as to diverge from the top side to the bottom side.