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    METHOD OF PRODUCING COATED LENSES
    61.
    发明申请
    METHOD OF PRODUCING COATED LENSES 有权
    生产涂层镜片的方法

    公开(公告)号：US20100086700A1

    公开(公告)日：2010-04-08

    申请号：US12516740

    申请日：2008-01-25

    Applicant: Naoto Takahashi ,  Katsuhiro Mori ,  Noriyuki Fukada

    Inventor： Naoto Takahashi ,  Katsuhiro Mori ,  Noriyuki Fukada

    IPC: G02B1/12 ,  C08F2/48

    CPC classification number: B05D1/005 ,  B05D3/067 ,  B05D5/061

    Abstract: A method of coating without permitting the coating solution to flow onto the side surfaces or the back surfaces of the lenses in the operation for applying the coating solution onto the lenses. A lens 15 is spin-coated with the coating solution having a particular viscosity. A side edge portion 121 of a spatula 119 is brought into contact with an upper edge portion of a side surface 15a of the lens 15 before the coating solution fed onto the surface of the lens arrives at the peripheral edge portion of the lens. The side edge portion 121 of the spatula 119 is so arranged that the upper end side of the spatula is tilted toward the center side of the lens 15 at an angle of 5 to 35 degrees with the vertical line as a reference. The coating solution applied onto the lens 15 that is rotating adheres onto the spatula 119 but does not adhere onto the side surface of the lens 15.

    Abstract translation: 在涂布溶液到透镜的操作中，涂布方法不允许涂布溶液流到透镜的侧表面或背面。 透镜15被涂覆有具有特定粘度的涂布溶液。 刮刀119的侧边缘部分121与透镜15的侧表面15a的上边缘部分接触，然后将馈送到透镜表面的涂布溶液到达透镜的周缘部分。 刮铲119的侧边缘部分121被布置成使得刮刀的上端侧以垂直线作为基准以5至35度的角度朝向透镜15的中心侧倾斜。 施加到正在旋转的透镜15上的涂布溶液粘附到刮刀119上，但不粘附到透镜15的侧表面上。

    Dynamic random access memory (DRAM) for suppressing a short-circuit current
    62.
    发明授权
    Dynamic random access memory (DRAM) for suppressing a short-circuit current 有权
    用于抑制短路电流的动态随机存取存储器（DRAM）

    公开(公告)号：US07663948B2

    公开(公告)日：2010-02-16

    申请号：US11730789

    申请日：2007-04-04

    Applicant: Katsuhiro Mori

    Inventor： Katsuhiro Mori

    IPC: G11C29/24 ,  G11C7/12 ,  G11C7/06 ,  G11C7/08

    CPC classification number: G11C29/83 ,  G11C11/401 ,  G11C29/816

    Abstract: A semiconductor memory device which has a normal memory cell array and a redundant memory cell array for replacing a failure bit in the normal memory cell array, having: a memory cell array having a plurality of word lines, a plurality of bit line pairs crossing the word lines, and a plurality of memory cells placed at the crossing positions; and a plurality of sense amplifier circuits which are placed between adjacent memory cell arrays and are shared by bit line pairs of memory cell arrays on both sides. And a current interrupting circuit for disconnecting the sense amplifier and the bit line pairs in a column having a failure is formed respectively between the sense amplifier circuit and the bit line pairs on both sides. By this current interrupting circuit, short-circuit current from the sense amplifier circuit to the shorted area can be suppressed.

    Abstract translation: 一种具有正常存储单元阵列的半导体存储器件和用于替换正常存储单元阵列中的故障位的冗余存储单元阵列，具有：具有多条字线的存储单元阵列，与 字线和放置在交叉位置的多个存储单元; 以及多个读出放大器电路，其被放置在相邻的存储单元阵列之间并且由两侧的存储单元阵列的位线对共享。 并且在感测放大器电路和两侧的位线对之间分别形成用于断开读出放大器和具有故障的列中的位线对的电流中断电路。 通过该电流中断电路，可以抑制从读出放大器电路到短路区域的短路电流。

    Coating composition and optical article
    63.
    发明授权
    Coating composition and optical article 有权
    涂料组合物和光学制品

    公开(公告)号：US07442734B2

    公开(公告)日：2008-10-28

    申请号：US10529462

    申请日：2003-12-04

    Applicant: Katsuhiro Mori ,  Junji Momoda

    Inventor： Katsuhiro Mori ,  Junji Momoda

    IPC: G02B13/14 ,  C08K5/15

    CPC classification number: C09K9/02 ,  C09D4/00 ,  C08F230/08

    Abstract: There is provided a coating composition which can be applied to a substrate such as a plastic lens so as to form a photochromic coating layer having good photochromic properties and excellent adhesion to the substrate on the surface of the substrate.This composition comprises, for example, as monomer components, 0.1 to 20 wt % of monomer having a group which produces a silanol group through hydrolysis such as γ-methacryloyloxypropyltrimethoxysilane and 0.1 to 50 wt % of monomer having at least one oxycarbonyl group in a molecule. The composition can further contain a maleimide compound as a monomer component and further desirably contains an amine compound.

    Abstract translation: 提供了可以应用于诸如塑料透镜的基材的涂料组合物，以形成具有良好的光致变色性能和对基材表面上的基材的优异粘附性的光致变色涂层。 该组合物包含例如单体成分，0.1〜20重量％的具有通过水解产生硅烷醇基的基团如γ-甲基丙烯酰氧基丙基三甲氧基硅烷和0.1〜50重量％的分子中具有至少一个氧羰基的单体的单体 。 该组合物还可以含有作为单体成分的马来酰亚胺化合物，进一步优选含有胺化合物。

    Semiconductor memory device
    65.
    发明申请
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US20080074939A1

    公开(公告)日：2008-03-27

    申请号：US11730789

    申请日：2007-04-04

    Applicant: Katsuhiro Mori

    Inventor： Katsuhiro Mori

    IPC: G11C7/00

    CPC classification number: G11C29/83 ,  G11C11/401 ,  G11C29/816

    Abstract: A semiconductor memory device which has a normal memory cell array and a redundant memory cell array for replacing a failure bit in the normal memory cell array, having: a memory cell array having a plurality of word lines, a plurality of bit line pairs crossing the word lines, and a plurality of memory cells placed at the crossing positions; and a plurality of sense amplifier circuits which are placed between adjacent memory cell arrays and are shared by bit line pairs of memory cell arrays on both sides. And a current interrupting circuit for disconnecting the sense amplifier and the bit line pairs in a column having a failure is formed respectively between the sense amplifier circuit and the bit line pairs on both sides. By this current interrupting circuit, short-circuit current from the sense amplifier circuit to the shorted area can be suppressed.

    Abstract translation: 一种具有正常存储单元阵列的半导体存储器件和用于替换正常存储单元阵列中的故障位的冗余存储单元阵列，具有：具有多条字线的存储单元阵列，与 字线和放置在交叉位置的多个存储单元; 以及多个读出放大器电路，其被放置在相邻的存储单元阵列之间并且由两侧的存储单元阵列的位线对共享。 并且在感测放大器电路和两侧的位线对之间分别形成用于断开读出放大器和具有故障的列中的位线对的电流中断电路。 通过该电流中断电路，可以抑制从读出放大器电路到短路区域的短路电流。

    Process for producing antibody composition by using rna inhibiting the function of alpha1,6-fucosyltransferase
    66.
    发明申请
    Process for producing antibody composition by using rna inhibiting the function of alpha1,6-fucosyltransferase 审中-公开
    通过使用抑制α1,6-岩藻糖基转移酶功能的rna产生抗体组合物的方法

    公开(公告)号：US20070134759A1

    公开(公告)日：2007-06-14

    申请号：US10575096

    申请日：2004-10-08

    Applicant: Harue Nishiya ,  Mitsuo Satoh ,  Katsuhiro Mori

    Inventor： Harue Nishiya ,  Mitsuo Satoh ,  Katsuhiro Mori

    IPC: C07K16/40 ,  C07H21/04 ,  C12P21/06 ,  C12N9/10

    CPC classification number: C12N15/1137 ,  C07K16/00 ,  C07K2317/72 ,  C12N2310/111 ,  C12N2310/14 ,  C12Y204/01068

    Abstract: The present invention provides a process for producing an antibody composition using a cell, which comprises using a cell into which an RNA having activity of suppressing the function of an enzyme relating to the modification of a sugar chain in which 1-position of fucose is bound to 6-position of N-acetylglucosamine in the reducing end through α-bond in a complex type N-glycoside-linked sugar chain is introduced; the RNA used in the production process; a DNA corresponding to the RNA; a cell in which the RNA or DNA is introduced or expressed; a process for producing the cell; and a method for suppressing the enzyme.

    Abstract translation: 本发明提供一种使用细胞的抗体组合物的制造方法，其包括使用具有抑制与其中1位的岩藻糖结合的糖链的修饰相关的酶的功能的活性的RNA的细胞 通过复合型N-糖苷连接的糖链中的α-键引入还原末端的N-乙酰葡糖胺的6-位; 生产过程中使用的RNA; 对应于RNA的DNA; 引入或表达RNA或DNA的细胞; 一种生产细胞的方法; 和抑制酶的方法。

    Process for producing photochromic layered product
    67.
    发明申请
    Process for producing photochromic layered product 有权
    光致变色层叠体的制造方法

    公开(公告)号：US20070065633A1

    公开(公告)日：2007-03-22

    申请号：US10486373

    申请日：2003-05-26

    Applicant: Katsuhiro Mori ,  Hironobu Nagoh ,  Junji Momoda ,  Shinobu Izumi

    Inventor： Katsuhiro Mori ,  Hironobu Nagoh ,  Junji Momoda ,  Shinobu Izumi

    IPC: B32B3/10

    CPC classification number: G02B1/041 ,  Y10T428/24322

    Abstract: A method of producing a laminate comprising preparing a substrate having curved surfaces; applying a photpolymerizable and curable composition containing a photochromic compound and a phosphorus-containing photopolymerization initiator onto the curved surfaces of the base member; and curing the photopolymerizable and curable composition by the irradiation with an active energy ray having a relative intensity profile of 0 to 5% of wavelength components of not shorter than 200 nm but shorter than 300 nm, 25 to 75% of wavelength components of not shorter than 300 nm but shorter than 400 nm and 25 to 75% of wavelength components of not shorter than 400 nm but not longer than 500 nm while maintaining the substrate at not higher than 100° C. This method makes it possible to form a homogeneous and thin film containing a photochromic compound at a high concentration and having a uniform thickness on the substrate having a curved surface, such as a spectacle lens that is generally available, and to impart photochromic properties while maintaining excellent mechanical and optical properties of the substrate.

    Abstract translation: 一种制备层压体的方法，包括制备具有弯曲表面的基材; 将含有光致变色化合物和含磷光聚合引发剂的可光聚合和可固化组合物施加到基体的弯曲表面上; 通过照射具有不小于200nm但小于300nm的波长成分的0〜5％的相对强度分布的活性能量射线照射光聚合性固化性组合物，25〜75％的波长成分不太短 在保持基板不高于100℃的同时，不小于400nm，但小于400nm，波长成分不小于400nm但不大于500nm的波长分量的25至75％。这种方法使得可以形成均匀和 该薄膜含有高浓度的光致变色化合物，并且在具有弯曲表面的基材上具有均匀的厚度，例如通常可获得的眼镜镜片，并赋予光致变色特性同时保持基材的优异的机械和光学性能。

    Semiconductor memory
    69.
    发明授权
    Semiconductor memory 有权

    公开(公告)号：US06621750B2

    公开(公告)日：2003-09-16

    申请号：US10155029

    申请日：2002-05-28

    Applicant: Yoshiaki Okuyama ,  Shinya Fujioka ,  Kota Hara ,  Katsuhiro Mori

    Inventor： Yoshiaki Okuyama ,  Shinya Fujioka ,  Kota Hara ,  Katsuhiro Mori

    IPC: G11C700

    CPC classification number: G11C29/808 ,  G11C29/812 ,  G11C29/848

    Abstract: A redundancy memory circuit stores a defect address indicating a defective memory cell row. A redundancy control circuit disables the defective memory cell row corresponding to the defect address stored in the redundancy memory circuit and enables a redundancy memory cell row in the memory block containing the defective memory cell row. Moreover, in the other memory blocks, the redundancy control circuit disables memory cell rows corresponding to the defective memory cell row and enables redundancy memory cell rows instead of these memory cell rows. Consequently, not only the memory block having the defective memory cell row but one of the memory cell rows in the other memory blocks is always also relieved. Thus, the redundancy memory circuit can be shared among all the memory blocks with a reduction in the number of redundancy memory circuits. As a result, the semiconductor memory can be reduced in chip size.

    Fuse circuit
    70.
    发明授权
    Fuse circuit 有权
    保险丝电路

    公开(公告)号：US06566937B1

    公开(公告)日：2003-05-20

    申请号：US10152579

    申请日：2002-05-23

    Applicant: Katsuhiro Mori ,  Shinya Fujioka ,  Masahiro Niimi

    Inventor： Katsuhiro Mori ,  Shinya Fujioka ,  Masahiro Niimi

    IPC: H01H3776

    CPC classification number: G11C17/16

    Abstract: Upon receiving a level of a second node through a third switch in the first half of a first period, a holding circuit outputs it as a fuse signal indicating a blown-out state of a fuse. Since the third switch turns off in the second half of the first period, a change in level of the second node occurring thereafter will not affect data in the holding circuit, whereby prevents malfunction of a fuse circuit. With the fuse blown, a level of a first node gets fixed at that of a second power supply line after the first period. This eliminates a voltage difference between both ends of the fuse, thereby preventing a growback. No occurrence of growback makes just one fuse blowing sufficient for the fuse circuit even with the fuse not completely cut off. This consequently shortens a time for blowing the fuse in a test process.

    Abstract translation: 在第一周期的前半段通过第三开关接收到第二节点的电平时，保持电路将其作为指示保险丝的熔断状态的熔丝信号输出。 由于在第一周期的后半部分中第三开关断开，所以其后发生的第二节点的电平变化不会影响保持电路中的数据，从而防止熔丝电路的故障。 在保险丝熔断时，在第一周期之后，第一节点的电平固定在第二电源线的电平上。 这消除了保险丝两端之间的电压差，从而防止了长时间的恢复。 即使没有完全切断保险丝，也不会发生长时间退回，只有一个保险丝对保险丝电路充足。 从而缩短了在测试过程中熔断熔断器的时间。

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