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224 条记录 (耗时 0.052 秒)

    Magnetic sensor using NiFe alloy for pinned layer
    62.
    发明授权
    Magnetic sensor using NiFe alloy for pinned layer 有权
    磁性传感器采用NiFe合金钉扎层

    公开(公告)号：US07609489B2

    公开(公告)日：2009-10-27

    申请号：US11366002

    申请日：2006-02-28

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3929

    摘要： A magnetic sensor comprising: a multilayer film which has a pinned magnetic layer, the magnetization thereof being pinned in one direction, and a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic material layer provided therebetween, in which current is allowed to flow in a direction perpendicular to the surfaces of the layers forming the multilayer film, wherein the pinned magnetic layer has a NiaFeb alloy layer (where a and b each indicate atomic percent, and 0

    摘要翻译： 一种磁传感器，包括：多层膜，其具有钉扎磁性层，其磁化被一个方向固定，并且在其上设置有非磁性材料层的固定磁性层上形成的自由磁性层，其中允许电流流动 在垂直于形成多层膜的层的表面的方向上，其中钉扎磁性层具有NiaFeb合金层（其中a和b各自表示原子百分比，并且满足0

    Magnetic detection head and method for manufacturing the same
    64.
    发明申请
    Magnetic detection head and method for manufacturing the same 有权
    磁性检测头及其制造方法

    公开(公告)号：US20060268465A1

    公开(公告)日：2006-11-30

    申请号：US11436270

    申请日：2006-05-17

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3906 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/3263 ,  H01F10/3281 ,  H01F41/302 ,  H01L43/10

    摘要： A magnetic detection element capable of maintaining the ΔRA at a high level and reducing the magnetostriction by improving a material for a free magnetic layer, as well as a method for manufacturing the same, is provided. The free magnetic layer includes a laminate composed of a CoMnX alloy layer formed from a metal compound represented by a compositional formula CoaMnbXc (where X represents at least one of Ge, Ga, In, Si, Pb, Zn, and Sb and a+b+c=100 atomic percent) and a CoMnZ alloy layer formed from a metal compound represented by a compositional formula CodMneZf (where Z represents at least one of Sn and Al and d+e+f=100 atomic percent). In this manner, the magnetostriction of the free magnetic layer can be reduced.

    摘要翻译： 提供了能够将DeltaRA保持在高电平并且通过改善自由磁性层的材料来减小磁致伸缩的磁性检测元件及其制造方法。 自由磁性层包括由由组成式表示的金属化合物形成的CoMnX合金层构成的层压体， （其中X表示Ge，Ga，In，Si，Pb，Zn和Sb中的至少一种，a + b + c = 100原子％）和由组成式Co < （其中Z表示Sn和Al中的至少一种，d + e + f = 100原子％）。 以这种方式，可以减小自由磁性层的磁致伸缩。

    CPP magnetic detectig device containing NiFe alloy on free layer thereof
    65.
    发明申请
    CPP magnetic detectig device containing NiFe alloy on free layer thereof 失效
    在其自由层上含有NiFe合金的CPP磁检测装置

    公开(公告)号：US20060198062A1

    公开(公告)日：2006-09-07

    申请号：US11365697

    申请日：2006-02-28

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/127 ,  G11B5/33 ,  H01F10/1936 ,  H01F10/3281 ,  H01F10/3295 ,  H01L43/10

    摘要： A magnetic detecting device having a large ΔRA value is provided. A free magnetic layer has a three layer structure in which a CoFe layer, a NiaFeb alloy layer (here, a and b are represented by at %, and satisfy the relationship of 47≦a≦77 and a+b=100), and a CoFe layer are laminated. In addition, pinned magnetic layers have heusler alloy layers, which are made of a heusler alloy such as a Co2MnGe alloy. Accordingly, the product ΔRA of a magnetic resistance variation ΔR of the magnetic detecting device and an area A of the device can have a value of 5 mΩμm2 or more.

    摘要翻译： 提供具有大ΔRA值的磁检测装置。 自由磁性层具有三层结构，其中CoFe层，NiBaFeBb合金层（这里a和b以％表示，满足 47 <= a <= 77和a + b = 100的关系）和CoFe层被层压。 此外，固定磁性层具有由诸如Co 2 MnGe合金的heusler合金制成的heusler合金层。 因此，磁检测装置的磁阻变化量ΔR的乘积DeltaRA和装置的面积A可以具有5m 2以上的值。

    Magnetic detectible head comprising free layer
    66.
    发明申请
    Magnetic detectible head comprising free layer 有权
    磁性可检测头包括自由层

    公开(公告)号：US20060198061A1

    公开(公告)日：2006-09-07

    申请号：US11364533

    申请日：2006-02-27

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G11B5/3903 ,  H01F10/1936 ,  H01F10/3281 ,  H01F10/3295 ,  H01L43/10

    摘要： There is provided a magnetic detecting element having a large ΔRA. A free magnetic layer has a three layer structure in which a CoFe layer, an NiaFeb alloy layer (where a and b are represented by at %, 0≦a≦25, and a+b=100), and a CoFe layer are laminated from the bottom. If the at % of Ni in an NiFe alloy that exists in the free magnetic layer is in this range, a spin-dependent bulk scattering coefficient β increases, and the product ΔRA of the resistance variation of the magnetic detecting element and the area of the element can be made increased.

    摘要翻译： 提供了具有大DeltaRA的磁检测元件。 自由磁性层具有三层结构，其中CoFe层，Ni / Fe合金层（其中a和b表示为％，0 <= a <= 25，a + b = 100），CoFe层从底部层叠。 如果存在于自由磁性层中的NiFe合金中的Ni的at％在该范围内，则自旋相关体散射系数β增加，并且磁检测元件的电阻变化的乘积DeltaRA与 元素可以增加。

    Magnetic sensing element containing quaternary Heusler alloy Co2Mn (Ge1-xSnx) which constitutes a free magnetic layer or pinned magnetic layer
    69.
    发明授权
    Magnetic sensing element containing quaternary Heusler alloy Co2Mn (Ge1-xSnx) which constitutes a free magnetic layer or pinned magnetic layer 有权
    包含构成自由磁性层或固定磁性层的四元Heusler合金Co2Mn（Ge1-xSnx）的磁感测元件

    公开(公告)号：US07800866B2

    公开(公告)日：2010-09-21

    申请号：US11386206

    申请日：2006-03-22

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC分类号： G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

    摘要： A magnetic sensing element is described, including a multilayer film including a pinned magnetic layer, a free magnetic layer disposed on the pinned magnetic layer with a nonmagnetic layer therebetween, wherein a current flows perpendicular to the surfaces of the individual layers of the multilayer film. The nonmagnetic layer is composed of Cu and has a face-centered cubic lattice crystal structure in which the {111} planes are preferentially oriented in a direction parallel to the surfaces of the layer. At least one of the pinned magnetic layer and the free magnetic layer includes a Co2Mn(Ge1-xSnx) alloy layer, the subscript x satisfying the range of 0.2≦x≦0.8; and the Co2Mn(Ge1-xSnx) alloy layer has a body-centered cubic lattice crystal structure in which the {110} planes are preferentially oriented in a direction parallel to the surfaces of the layer.

    摘要翻译： 描述了一种磁感测元件，其包括多层膜，其包括被钉扎的磁性层，在其上具有非磁性层的钉扎磁性层上的自由磁性层，其中电流垂直于多层膜的各个层的表面流动。 非磁性层由Cu构成，并且具有面心立方晶格结构，其中{111}面优先在与层的表面平行的方向上取向。 固定磁性层和自由磁性层中的至少一个包括Co2Mn（Ge1-xSnx）合金层，下标x满足0.2＆nlE; x＆nlE; 0.8的范围; 并且Co2Mn（Ge1-xSnx）合金层具有体心立方晶格结构，其中{110}面优先在与层的表面平行的方向上取向。