摘要:
On a glass substrate, gate bus lines, data bus lines, and TFTs are formed. Then, on the substrate, an insulating film, covering the gate bus lines, data bus lines and TFTs, is formed, and a positive type photoresist film is further formed thereon. Next, through exposure and development processes, the resist film is divided for each picture element and subjected to ultraviolet ray irradiation to harden only a surface layer thereof. Then, the resist film is subjected to heat treatment to form thereon wrinkle-form surface ruggedness of a uniform pattern, which is determined depending on the size of the resist film. Subsequently, reflection electrodes are formed on the resist film. The reflection electrodes are formed to overlap the gate bus line, data bus line and TFTs, and the regions between the adjacent reflection electrodes serve as light transmission regions.
摘要:
The gate bus lines, the data bus lines, TFTs, etc. are formed on one glass substrate. Also, linear structures arranged in parallel with the gate bus lines are formed simultaneously with any one of the gate bus lines and the data bus lines. Then, a positive resist film is formed over the substrate, and then only a surface layer is cured by irradiating the ultraviolet ray onto the resist film. Then, the annealing is applied to the resist film. Since the linear structures are present under the resist film, a cross section of the resist film is corrugated by the annealing and thus wrinkle-like roughness extending in the almost same direction as the structures are formed on the surface. Then, the reflective electrode is formed on the resist film.
摘要:
The gate bus lines, the data bus lines, TFTs, etc. are formed on one glass substrate. Also, linear structures arranged in parallel with the gate bus lines are formed simultaneously with any one of the gate bus lines and the data bus lines. Then, a positive resist film is formed over the substrate, and then only a surface layer is cured by irradiating the ultraviolet ray onto the resist film. Then, the annealing is applied to the resist film. Since the linear structures are present under the resist film, a cross section of the resist film is corrugated by the annealing and thus wrinkle-like roughness extending in the almost same direction as the structures are formed on the surface. Then, the reflective electrode is formed on the resist film.
摘要:
The invention provides a reflective liquid crystal display device being low cost, high reflectance, and high contrast in the reflective liquid crystal display device of VA system providing a diffusion reflective plate having uneven shape and using negative dielectric anisotropy liquid crystal and a substrate using for a reflective liquid crystal display device. Assuming that reflective surface of the reflective plate has plurality of small mirror surfaces, direction of normal vector In of the small mirror is constructed so that standard deviation of probability distribution existing within angle range of azimuth angle from φn to φn+1° is 0.1 or more.
摘要:
A reflection-type liquid crystal display device includes a first substrate, a second substrate facing the first substrate and carrying projections and depressions, a reflective electrode on the second substrate so as to cover the projections and depressions and in electrical contact with a switching device provided on the second substrate via a contact hole, and a negative liquid crystal layer between the first and second substrates, wherein the contact hole is disposed centrally to the reflection electrode and a structure controlling alignment of liquid crystal molecules in the liquid crystal layer is disposed so as to overlap the contact hole viewed in a direction perpendicular to the second substrate.
摘要:
On a glass substrate, gate bus lines, data bus lines, and TFTs are formed. Then, on the substrate, an insulating film, covering the gate bus lines, data bus lines and TFTs, is formed, and a positive type photoresist film is further formed thereon. Next, through exposure and development processes, the resist film is divided for each picture element and subjected to ultraviolet ray irradiation to harden only a surface layer thereof. Then, the resist film is subjected to heat treatment to form thereon wrinkle-form surface ruggedness of a uniform pattern, which is determined depending on the size of the resist film. Subsequently, reflection electrodes are formed on the resist film. The reflection electrodes are formed to overlap the gate bus line, data bus line and TFTs, and the regions between the adjacent reflection electrodes serve as light transmission regions.
摘要:
The gate bus lines, the data bus lines, TFTs, etc. are formed on one glass substrate. Also, linear structures arranged in parallel with the gate bus lines are formed simultaneously with any one of the gate bus lines and the data bus lines. Then, a positive resist film is formed over the substrate, and then only a surface layer is cured by irradiating the ultraviolet ray onto the resist film. Then, the annealing is applied to the resist film. Since the linear structures are present under the resist film, a cross section of the resist film is corrugated by the annealing and thus wrinkle-like roughness extending in the almost same direction as the structures are formed on the surface. Then, the reflective electrode is formed on the resist film.
摘要:
On a glass substrate, gate bus lines, data bus lines, and TFTs are formed. Then, on the substrate, an insulating film, covering the gate bus lines, data bus lines and TFTs, is formed, and a positive type photoresist film is further formed thereon. Next, through exposure and development processes, the resist film is divided for each picture element and subjected to ultraviolet ray irradiation to harden only a surface layer thereof. Then, the resist film is subjected to heat treatment to form thereon wrinkle-form surface ruggedness of a uniform pattern, which is determined depending on the size of the resist film. Subsequently, reflection electrodes are formed on the resist film. The reflection electrodes are formed to overlap the gate bus line, data bus line and TFTs, and the regions between the adjacent reflection electrodes serve as light transmission regions.
摘要:
A reflection-type liquid crystal display device, including a first substrate, a second substrate disposed so as to face the first substrate, with the second substrate carrying projections and depressions having a reflectivity, a liquid crystal layer having any of positive or negative dielectric anisotropy provided between the first and second substrates, and a polarizer disposed at an outer side of the first substrate. The device also preferably includes an optical phase compensation film disposed between the first substrate and the polarizer, with the optical phase compensation film having a negative dielectric anisotropy in a direction perpendicular to a plane of the first substrate. The optical phase compensation film also preferably has a retardation df{(nx+nz)/2−nz} so as to satisfy the relationship 0.4≦[df{(nx+ny)/2−nz}]/(dlcΔn)≦0.7, wherein nx, ny and nz are refractive indices of the optical phase compensation film respectively in an x-direction, a y-direction and a z-direction, dlc is the thickness of the liquid crystal layer, and Δn is a refractive index difference between an extraordinary ray and an ordinary ray in the liquid crystal layer.
摘要翻译:一种反射型液晶显示装置,包括第一基板,与第一基板对置配置的第二基板,第二基板具有反射率的凸起和凹陷,具有任何正或负介电各向异性的液晶层 设置在第一和第二基板之间,偏振器设置在第一基板的外侧。 该装置还优选地包括设置在第一基板和偏振器之间的光学相位补偿膜,光学相位补偿膜在垂直于第一基板的平面的方向上具有负介电各向异性。 光学相位补偿膜还优选具有延迟df {(n> x N + n z z)/ 2-n z z}以满足 关系0.4 <= [DF {(N××+ n y>))y y y y}}}}}}}}}}} 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 0.7 其中,x,y,y,z分别为光学相位补偿膜的x方向的折射率,y方向, 方向和z方向,dlc是液晶层的厚度,Deltan是液晶层中的异常光线与普通光线之间的折射率差。
摘要:
A substrate for a transflective liquid crystal display that is capable of display in both reflective and transmissive modes and a display having the same. One embodiment includes a substrate that sandwiches a liquid crystal in combination with an opposite substrate formed with a common electrode on the opposing surface, a plurality of bus lines on a top surface of the substrate that intersect each other with an insulation film interposed therebetween, and thin film transistors formed near the intersections of the plurality of bus lines. A plurality of pixel regions constituted of a plurality of reflective regions in which reflective electrodes for reflecting incident light from the side of the top surface of the substrate are formed in a matrix and transmissive regions which are provided around the reflective regions and which transmit incident light from the side of a bottom surface toward the top surface of the substrate.