摘要:
A memory system is provided that supports partial cache line read operations to a memory module to reduce read data traffic on a memory channel. The memory system comprises a memory hub device integrated in the memory module and a set of memory devices coupled to the memory hub device. The memory hub comprises burst logic integrated in the memory hub device. The burst logic determines an amount of read data to be transmitted from the set of memory devices and generates a burst length field corresponding to the amount of read data. The memory hub also comprises a memory hub controller integrated in the memory hub device. The memory hub controller controls the amount of read data that is transmitted using the burst length field. The memory hub device transmits the amount of read data that is equal to or less than a conventional data burst amount of data.
摘要:
A memory system with high availability is provided. The memory system includes multiple memory channels. Each memory channel includes at least one memory module with memory devices organized as partial ranks coupled to memory device bus segments. Each partial rank includes a subset of the memory devices accessible as a subchannel on a subset of the memory device bus segments. The memory system also includes a memory controller in communication with the multiple memory channels. The memory controller distributes an access request across the memory channels to access a full rank. The full rank includes at least two of the partial ranks on separate memory channels. Partial ranks on a common memory module can be concurrently accessed. The memory modules can use at least one checksum memory device as a dedicated checksum memory device or a shared checksum memory device between at least two of the concurrently accessible partial ranks.
摘要:
A mechanism is provided for using a cache that is embedded in a memory hub device to replace failed memory cells. A memory module comprises an integrated memory hub device. The memory hub device comprises an integrated memory device data interface that communicates with a set of memory devices coupled to the memory hub device and a cache integrated in the memory hub device. The memory hub device also comprises an integrated memory hub controller that controls the data that is read or written by the memory device data interface to the cache based on a determination whether one or more memory cells within the set of memory devices has failed.
摘要:
A packetized cascade memory system including a plurality of memory assemblies, a memory bus including multiple segments, a bus repeater module and a segment level sparing module. The bus repeater module is in communication with two or more of the memory assemblies via the memory bus. The segment level sparing module provides segment level sparing for the communication bus upon segment failure.
摘要:
A memory system is provided that performs error correction at a memory device level. The memory system comprises a memory hub device integrated in the memory module and a link interface integrated in the memory hub device that provides a communication pathway between the memory hub device and an external memory controller. The link interface comprises first error correction logic integrated in the link interface that performs error correction operations on first data that is received from the external memory controller via a first memory channel to be transmitted to a set of memory devices. The first error correction logic generates a first error signal to the external memory controller in response to the first error correction logic detecting a first error in the first data. Link interface control logic integrated in the link interface controls the transmission of the first data to the set of memory devices.
摘要:
A method is provided that supports partial cache line read and write operations to a memory module to reduce read and write data traffic on a memory channel. In a memory hub controller integrated in the memory module determines an amount of data to be transmitted to or from a set of memory devices of the memory module, in responsive to an access request. The memory hub controller generates a burst length field corresponding to the amount of data. The memory controller controls the amount of data that is transmitted to or from the memory devices using the burst length field. The amount of data is equal to or less than a standard data burst amount of data for the set of memory devices.
摘要:
A memory system is provided that supports partial cache line write operations to a memory module to reduce write data traffic on a memory channel. The memory system comprises a memory hub device integrated in the memory module and a set of memory devices coupled to the memory hub device. The memory hub device comprises burst logic integrated in the memory hub device. The burst logic determines an amount of write data to be transmitted to the set of memory devices and generates a burst length field corresponding to the amount of write data. The memory hub also comprises a memory hub controller integrated in the memory hub device. The memory hub controller controls the amount of write data that is transmitted using the burst length field. The memory hub device transmits the amount of write data that is equal to or less than a conventional data burst amount.
摘要:
A memory subsystem with a memory bus and a memory assembly. The memory bus includes multiple bitlanes. The memory assembly is in communication with the memory bus and includes instructions for receiving an error code correction (ECC) word in multiple packets via the memory bus. The ECC word includes data bits and ECC bits arranged into multiple multi-bit ECC symbols. Each of the ECC symbols is associated with one of the bitlanes on the memory bus. The memory assembly also includes instructions for utilizing one of the ECC symbols to perform error detection and correction for the bits in the ECC word received via the bitlane associated with the ECC symbol.
摘要:
A memory subsystem with a memory bus and a memory assembly. The memory bus includes multiple bitlanes. The memory assembly is in communication with the memory bus and includes instructions for receiving an error code correction (ECC) word in multiple packets via the memory bus. The ECC word includes data bits and ECC bits arranged into multiple multi-bit ECC symbols. Each of the ECC symbols is associated with one of the bitlanes on the memory bus. The memory assembly also includes instructions for utilizing one of the ECC symbols to perform error detection and correction for the bits in the ECC word received via the bitlane associated with the ECC symbol.
摘要:
A method for providing frame start indication that includes receiving a data transfer via a channel in a memory system. The receiving is in response to a request, and at an indeterminate time relative to the request. It is determined whether the data transfer includes a frame start indicator. The data transfer and “n” subsequent data transfers are captured in response to determining that the data transfer includes a frame start indicator. The data transfer and the “n” subsequent data transfers make up a data frame, where “n” is greater than zero.