公开(公告)号：US09620236B2

公开(公告)日：2017-04-11

申请号：US14790438

申请日：2015-07-02

Applicant: Micron Technology, Inc.

Inventor： Violante Moschiano ,  Walter Di Francesco

IPC: G11C16/10 ,  G11C16/34 ,  G11C11/56

CPC classification number: G11C16/3427 ,  G11C11/5628 ,  G11C16/3418 ,  G11C16/3431 ,  G11C16/349

Abstract: Some embodiments include apparatuses and methods having a compensation unit to provide a compensation value based at least in part on a threshold voltage value of a memory cell. At least one of such embodiments includes a controller to select a code during an operation of retrieving information from the memory cell to represent a value of information stored in the memory cell. Such a code can be associated with an address having an address value based at least in part on the compensation value. Additional apparatuses and methods are described.

公开(公告)号：US20150302931A1

公开(公告)日：2015-10-22

申请号：US14790438

申请日：2015-07-02

Applicant: Micron Technology, Inc.

Inventor： Violante Moschiano ,  Walter Di Francesco

IPC: G11C16/34 ,  G11C11/56

CPC classification number: G11C16/3427 ,  G11C11/5628 ,  G11C16/3418 ,  G11C16/3431 ,  G11C16/349

Abstract: Some embodiments include apparatuses and methods having a compensation unit to provide a compensation value based at least in part on a threshold voltage value of a memory cell. At least one of such embodiments includes a controller to select a code during an operation of retrieving information from the memory cell to represent a value of information stored in the memory cell. Such a code can be associated with an address having an address value based at least in part on the compensation value. Additional apparatuses and methods are described.

Abstract translation: 一些实施例包括具有补偿单元的装置和方法，该补偿单元至少部分地基于存储器单元的阈值电压值来提供补偿值。 这些实施例中的至少一个包括在从存储器单元检索信息以表示存储在存储单元中的信息的值的操作期间选择代码的控制器。 这样的代码可以至少部分地基于补偿值与具有地址值的地址相关联。 描述附加的装置和方法。