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61.发明申请公开(公告)号：US20120032306A1
公开(公告)日：2012-02-09
申请号：US13148631
申请日：2010-01-22
申请人： Elmar Baur , Bernd Böhm , Alexander Heindl , Patrick Rode , Matthias Sabathil
发明人： Elmar Baur , Bernd Böhm , Alexander Heindl , Patrick Rode , Matthias Sabathil
IPC分类号： H01L29/12 , H01L21/312
CPC分类号： H01L33/22 , H01L33/0062
摘要： A method for patterning a semiconductor surface is specified. A photoresist is applied to an outer area of a second semiconductor wafer. A surface of the photoresist that is remote from the second semiconductor wafer is patterned by impressing a patterned surface of the first wafer into the photoresist. A patterning method is applied to the surface of the photoresist, wherein a structure applied on the photoresist is transferred at least in places to the outer area of the second semiconductor wafer.
摘要翻译： 规定了图案化半导体表面的方法。 光致抗蚀剂被施加到第二半导体晶片的外部区域。 通过将第一晶片的图案化表面压印到光致抗蚀剂中，使光刻胶远离第二半导体晶片的表面被图案化。 将图案化方法应用于光致抗蚀剂的表面，其中施加在光致抗蚀剂上的结构至少在第二半导体晶片的外部区域被转移。
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公开(公告)号：US20110284918A1
公开(公告)日：2011-11-24
申请号：US13142885
申请日：2010-01-05
IPC分类号： H01L33/02
CPC分类号： H01L33/0062 , H01L33/0075 , H01L33/30 , H01L33/32 , H01L2924/0002 , H01S5/32341 , H01L2924/00
摘要： An optoelectronic semiconductor component includes an active layer that emits radiation, the active layer surrounded by cladding layers, wherein the cladding layers and/or the active layer include(s) an indium-containing phosphide compound semiconductor material and the phosphide compound semiconductor material contains at least one of elements Bi or Sb as an additional element of main group V.
摘要翻译： 光电子半导体部件包括发射辐射的有源层，由包覆层包围的有源层，其中包层和/或有源层包括含铟磷化合物半导体材料，并且磷化物半导体材料包含在 元素Bi或Sb中的至少一种作为主要组V的附加元素。
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公开(公告)号：US20110049555A1
公开(公告)日：2011-03-03
申请号：US12921379
申请日：2009-03-13
申请人： Karl Engl , Lutz Hoeppel , Patrick Rode , Matthias Sabathil
发明人： Karl Engl , Lutz Hoeppel , Patrick Rode , Matthias Sabathil
CPC分类号： H01L33/382 , H01L33/10 , H01L33/40 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places.
摘要翻译： 光电子半导体芯片具有半导体层序列，该半导体层序列具有在第一导电类型的层和第二导电类型的层之间产生辐射的有源层。 第一导电类型的层与半导体层序列的正面相邻。 半导体层序列包含从半导体层序列通过有源层延伸到第一导电类型的层的从前侧的与背面相对的至少一个切口。 第一导电类型的层通过第一电连接层通过切口电连接，第一电连接层至少在某些地方覆盖半导体层序列的后侧。
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64.发明申请公开(公告)号：US20100283073A1
公开(公告)日：2010-11-11
申请号：US12680714
申请日：2008-09-04
CPC分类号： H01L33/38 , H01L33/10 , H01L33/145 , H01L33/405 , H01L2924/0002 , H01L2924/00
摘要： A thin-film LED comprising a barrier layer (3), a first mirror layer (2) succeeding the barrier layer (3), a layer stack (5) succeeding the first mirror layer (2), and at least one contact structure (6) succeeding the layer stack (5). The layer stack (5) has at least one active layer (5a) which emits electromagnetic radiation. The contact structure (6) is arranged on a radiation exit area (4) and has a contact area (7). The first mirror layer (2) has, in a region lying opposite the contact area of the contact structure (6), a cutout which is larger than the contact area (7) of the contact structure (6). The efficiency of the thin-film LED is increased as a result.
摘要翻译： 一种薄膜LED，包括阻挡层（3），位于阻挡层（3）之后的第一镜层（2），在第一镜面层（2）之后的层叠体（5），以及至少一个接触结构 6）后续层叠（5）。 层叠体（5）具有至少一个发射电磁辐射的活性层（5a）。 接触结构（6）设置在辐射出口区域（4）上并且具有接触区域（7）。 第一镜层（2）在与接触结构（6）的接触区域相对的区域中具有大于接触结构（6）的接触面积（7）的切口。 结果，提高了薄膜LED的效率。
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